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1. 发明授权

US08553444B2 Variable resistance nonvolatile storage device and method of forming memory cell 有权
标题翻译：可变电阻非易失性存储器件和形成存储单元的方法
公开(公告)号：US08553444B2
公开(公告)日：2013-10-08
申请号：US12743472
申请日：2009-08-20
申请人： Shunsaku Muraoka , Yoshihiko Kanzawa , Satoru Mitani , Koji Katayama , Kazuhiko Shimakawa , Satoru Fujii , Takeshi Takagi
发明人： Shunsaku Muraoka , Yoshihiko Kanzawa , Satoru Mitani , Koji Katayama , Kazuhiko Shimakawa , Satoru Fujii , Takeshi Takagi
IPC分类号： G11C11/00
CPC分类号： H01L45/147 , G11C13/0007 , G11C13/0069 , G11C2013/009 , G11C2213/15 , G11C2213/32 , G11C2213/34 , G11C2213/79 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675
摘要： A variable resistance nonvolatile storage device which includes (i) a semiconductor substrate (301), (ii) a variable resistance element (309) having: lower and upper electrodes (309a, 309c); and a variable resistance layer (309b) whose resistance value reversibly varies based on voltage signals each of which has a different polarity and is applied between the electrodes (309a, 309c), and (iii) a MOS transistor (317) formed on the substrate (301), wherein the variable resistance layer (309b) includes: oxygen-deficient transition metal oxide layers (309b-1, 309b-2) having compositions MOX and MOy (where x
摘要翻译：一种可变电阻非易失性存储装置，包括：（i）半导体衬底（301），（ii）具有下电极和上电极（309a，309c）的可变电阻元件（309）和可变电阻层（309b），其电阻值基于各自具有不同极性的电压信号而被可逆地变化并施加在电极（309a，309c）之间，以及（iii）形成在基板上的MOS晶体管（301），其中所述可变电阻层（309b）包括：具有组成MOX和MOy（其中x

2. 发明申请

US20090283736A1 NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING THE NONVOLATILE MEMORY ELEMENT 有权
标题翻译：非易失性存储元件，其制造方法和使用非易失性存储元件的非易失性半导体器件
公开(公告)号：US20090283736A1
公开(公告)日：2009-11-19
申请号：US12307211
申请日：2008-03-26
申请人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhlko Shimakawa
发明人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhlko Shimakawa
IPC分类号： H01L45/00 , H01L21/16 , H01L29/12
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/32 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675 , Y10S438/90
摘要： A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0
摘要翻译：非易失性存储元件包括设置在第一电极层（103）和第二电极层（107）之间的第一电极层（103），第二电极（107）和电阻变化层（106），电阻电阻变化层的值根据施加在电极（103），（107）之间的具有不同极性的电信号而可逆地变化，其中电阻变化层（106）具有第一区域，该第一区域包括第一氧缺陷型氧化钽，由TaOx（0

3. 发明授权

US08309946B2 Resistance variable element 有权
标题翻译：电阻变元
公开(公告)号：US08309946B2
公开(公告)日：2012-11-13
申请号：US12935455
申请日：2009-07-22
申请人： Satoru Mitani , Shunsaku Muraoka , Yoshihiko Kanzawa , Koji Katayama , Ryoko Miyanaga , Satoru Fujii , Takeshi Takagi
发明人： Satoru Mitani , Shunsaku Muraoka , Yoshihiko Kanzawa , Koji Katayama , Ryoko Miyanaga , Satoru Fujii , Takeshi Takagi
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/1273 , H01L45/146 , H01L45/1625 , H01L45/1641
摘要： A resistance variable element of the present invention comprises a first electrode (103), a second electrode (107), and a resistance variable layer which is interposed between the first electrode (103) and the second electrode (107) to contact the first electrode (103) and the second electrode (107), the resistance variable layer being configured to change in response to electric signals with different polarities which are applied between the first electrode (103) and the second electrode (107), the resistance variable layer comprising an oxygen-deficient transition metal oxide layer, and the second electrode (107) comprising platinum having minute hillocks (108).
摘要翻译：本发明的电阻可变元件包括第一电极（103），第二电极（107）和介于第一电极（103）和第二电极（107）之间的电阻变化层，以接触第一电极（103）和第二电极（107），电阻变化层被配置为响应于施加在第一电极（103）和第二电极（107）之间的具有不同极性的电信号而改变，电阻变化层包括氧缺乏的过渡金属氧化物层，以及包含具有分开的小丘（108）的铂的第二电极（107）。

4. 发明申请

US20120320661A1 METHOD OF PROGRAMMING VARIABLE RESISTANCE ELEMENT AND NONVOLATILE STORAGE DEVICE 有权
标题翻译：可变电阻元件和非易失性存储器件的编程方法
公开(公告)号：US20120320661A1
公开(公告)日：2012-12-20
申请号：US13596154
申请日：2012-08-28
申请人： Shunsaku MURAOKA , Takeshi Takagi , Satoru Mitani , Koji Katayama
发明人： Shunsaku MURAOKA , Takeshi Takagi , Satoru Mitani , Koji Katayama
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C13/0069 , G11C2013/0083 , G11C2213/72 , G11C2213/79 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A method includes applying a first polarity writing voltage pulse to a metal oxide layer to change its resistance state from high to low into a write state, applying a second polarity erasing voltage pulse different from the first polarity to the metal oxide layer to change its resistance state from low to high into an erase state, and applying an initial voltage pulse having the second polarity to the metal oxide layer before first application of the writing voltage pulse, to change an initial resistance value of the metal oxide layer. R0>RH>RL and |V0|>|Ve|≧|Vw| are satisfied where R0, RL, and RH are the resistance values of the initial, write, and erase states, respectively, of the metal oxide layer, and V0, Vw, and Ve are voltage values of the initial, writing, and erasing voltage pulses, respectively.
摘要翻译：一种方法包括：将第一极性写入电压脉冲施加到金属氧化物层，以将其电阻状态从高变为低电平变为写入状态，将不同于第一极性的第二极性擦除电压脉冲施加到金属氧化物层以改变其电阻状态从低到高进入擦除状态，以及在首次施加写入电压脉冲之前将具有第二极性的初始电压脉冲施加到金属氧化物层，以改变金属氧化物层的初始电阻值。 R0> RH> RL和| V0 |> | Ve |≥| Vw | 满足R0，RL和RH分别是金属氧化物层的初始，写入和擦除状态的电阻值，V0，Vw和Ve是初始，写入和擦除电压的电压值脉冲。

5. 发明申请

US20110294259A1 NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING THE NONVOLATILE MEMORY ELEMENT 有权
标题翻译：非易失性存储元件，其制造方法和使用非易失性存储元件的非易失性半导体器件
公开(公告)号：US20110294259A1
公开(公告)日：2011-12-01
申请号：US13205408
申请日：2011-08-08
申请人： Yoshihiko KANZAWA , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
发明人： Yoshihiko KANZAWA , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
IPC分类号： H01L21/36
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/32 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675 , Y10S438/90
摘要： A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0
摘要翻译：非易失性存储元件包括设置在第一电极层（103）和第二电极层（107）之间的第一电极层（103），第二电极（107）和电阻变化层（106），电阻电阻变化层的值根据施加在电极（103），（107）之间的具有不同极性的电信号而可逆地变化，其中电阻变化层（106）具有第一区域，该第一区域包括第一氧缺陷型氧化钽，由TaOx（0

6. 发明授权

US08395930B2 Method of programming variable resistance element and nonvolatile storage device 有权
标题翻译：编程可变电阻元件和非易失性存储器件的方法
公开(公告)号：US08395930B2
公开(公告)日：2013-03-12
申请号：US13596154
申请日：2012-08-28
申请人： Shunsaku Muraoka , Takeshi Takagi , Satoru Mitani , Koji Katayama
发明人： Shunsaku Muraoka , Takeshi Takagi , Satoru Mitani , Koji Katayama
IPC分类号： G11C11/21
CPC分类号： G11C13/0007 , G11C13/0069 , G11C2013/0083 , G11C2213/72 , G11C2213/79 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A method includes applying a first polarity writing voltage pulse to a metal oxide layer to change its resistance state from high to low into a write state, applying a second polarity erasing voltage pulse different from the first polarity to the metal oxide layer to change its resistance state from low to high into an erase state, and applying an initial voltage pulse having the second polarity to the metal oxide layer before first application of the writing voltage pulse, to change an initial resistance value of the metal oxide layer. R0>RH>RL and |V0|>|Ve|≧|Vw| are satisfied where R0, RL, and RH are the resistance values of the initial, write, and erase states, respectively, of the metal oxide layer, and V0, Vw, and Ve are voltage values of the initial, writing, and erasing voltage pulses, respectively.
摘要翻译：一种方法包括：将第一极性写入电压脉冲施加到金属氧化物层，以将其电阻状态从高变为低电平变为写入状态，将不同于第一极性的第二极性擦除电压脉冲施加到金属氧化物层以改变其电阻状态从低到高进入擦除状态，以及在首次施加写入电压脉冲之前将具有第二极性的初始电压脉冲施加到金属氧化物层，以改变金属氧化物层的初始电阻值。 R0> RH> RL和| V0 |> | Ve |≥| Vw | 满足R0，RL和RH分别是金属氧化物层的初始，写入和擦除状态的电阻值，V0，Vw和Ve是初始，写入和擦除电压的电压值脉冲。

7. 发明授权

US08279658B2 Method of programming variable resistance element and nonvolatile storage device 有权
标题翻译：编程可变电阻元件和非易失性存储器件的方法
公开(公告)号：US08279658B2
公开(公告)日：2012-10-02
申请号：US12994462
申请日：2010-03-25
申请人： Shunsaku Muraoka , Takeshi Takagi , Satoru Mitani , Koji Katayama
发明人： Shunsaku Muraoka , Takeshi Takagi , Satoru Mitani , Koji Katayama
IPC分类号： G11C11/21
CPC分类号： G11C13/0007 , G11C13/0069 , G11C2013/0083 , G11C2213/72 , G11C2213/79 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： Applying a writing voltage pulse having a first polarity to a metal oxide layer (3) to change a resistance state of the metal oxide layer (3) from high to low so as to render the resistance state a write state, applying an erasing voltage pulse having a second polarity different from the first polarity to the metal oxide layer (3) to change the resistance state of the metal oxide layer (3) from low to high so as to render the resistance state an erase state, and applying an initial voltage pulse having the second polarity to the metal oxide layer (3) before the applying of a writing voltage pulse is performed for a first time, to change a resistance value of an initial state of the metal oxide layer (3) are included, and R0>RH>RL and |V0|>|Ve|≧|Vw| are satisfied where R0, RL, and RH are the resistance values of the initial, write, and erase states, respectively, of the metal oxide layer (3), and V0, Vw, and Ve are voltage values of the initial, writing, and erasing voltage pulses, respectively.
摘要翻译：将具有第一极性的写入电压脉冲施加到金属氧化物层（3）以将金属氧化物层（3）的电阻状态从高变为低，以使电阻状态成为写入状态，施加擦除电压脉冲具有与第一极性不同于金属氧化物层（3）的第二极性，以将金属氧化物层（3）的电阻状态从低到高改变为使得电阻状态为擦除状态，并且施加初始电压首先执行施加写入电压脉冲之前对金属氧化物层（3）具有第二极性的脉冲，以改变金属氧化物层（3）的初始状态的电阻值，并且R0 > RH> RL和| V0 |> | Ve |≥| Vw | 满足R0，RL和RH分别为金属氧化物层（3）的初始，写入和擦除状态的电阻值，V0，Vw和Ve为初始，写入和写入的电压值，并分别擦除电压脉冲。

8. 发明授权

US08022502B2 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element 有权
标题翻译：非易失性存储元件及其制造方法以及使用非易失性存储元件的非易失性半导体装置
公开(公告)号：US08022502B2
公开(公告)日：2011-09-20
申请号：US12307211
申请日：2008-03-26
申请人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
发明人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/32 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675 , Y10S438/90
摘要： A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0
摘要翻译：非易失性存储元件包括设置在第一电极层（103）和第二电极层（107）之间的第一电极层（103），第二电极（107）和电阻变化层（106），电阻电阻变化层的值根据施加在电极（103），（107）之间的具有不同极性的电信号而可逆地变化，其中电阻变化层（106）具有第一区域，该第一区域包括第一氧缺陷型氧化钽，由TaOx（0

9. 发明授权

US08445319B2 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element 有权
标题翻译：非易失性存储元件及其制造方法以及使用非易失性存储元件的非易失性半导体装置
公开(公告)号：US08445319B2
公开(公告)日：2013-05-21
申请号：US13205408
申请日：2011-08-08
申请人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
发明人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/32 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675 , Y10S438/90
摘要： A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0
摘要翻译：非易失性存储元件包括设置在第一电极层（103）和第二电极层（107）之间的第一电极层（103），第二电极（107）和电阻变化层（106），电阻电阻变化层的值根据施加在电极（103），（107）之间的具有不同极性的电信号而可逆地变化，其中电阻变化层（106）具有第一区域，该第一区域包括第一氧缺陷型氧化钽，由TaOx（0

10. 发明授权

US08345465B2 Driving method of variable resistance element, initialization method of variable resistance element, and nonvolatile storage device 有权
标题翻译：可变电阻元件的驱动方法，可变电阻元件的初始化方法和非易失性存储器件
公开(公告)号：US08345465B2
公开(公告)日：2013-01-01
申请号：US12745300
申请日：2009-09-30
申请人： Shunsaku Muraoka , Takeshi Takagi , Satoru Mitani , Koji Katayama
发明人： Shunsaku Muraoka , Takeshi Takagi , Satoru Mitani , Koji Katayama
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C13/0033 , G11C13/0064 , G11C13/0069 , G11C2013/0073 , G11C2013/0083 , G11C2013/009 , G11C2213/31 , G11C2213/32 , G11C2213/34
摘要： A method of driving a variable resistance element includes: a writing step performed by applying a writing voltage pulse having a first polarity to a variable resistance layer to change a resistance state of the layer from high to low; and an erasing step performed by applying an erasing voltage pulse having a second polarity to the layer to change the state from low to high. Here, |Vw1|>|Vw2| where Vw1 represents a voltage value of the writing voltage pulse for first to N-th writing steps (N≧1) and Vw2 represents a voltage value of the writing voltage pulse for (N+1)-th and subsequent writing steps, and |Ve1|>|Ve2| where Ve1 represents a voltage value of the erasing voltage pulse for first to M-th erasing steps (M≧1) and Ve2 represents a voltage value of the erasing voltage pulse for (M+1)-th and subsequent erasing steps. The (N+1)-th writing step follows the M-th erasing step.
摘要翻译：驱动可变电阻元件的方法包括：通过将具有第一极性的写入电压脉冲施加到可变电阻层而将层的电阻状态从高变为低的步骤来执行写入步骤; 以及通过将具有第二极性的擦除电压脉冲施加到该层以将状态从低变为高而执行的擦除步骤。这里，| Vw1 |> | Vw2 | 其中Vw1表示第一至第N写入步骤（N≥1）的写入电压脉冲的电压值，Vw2表示第（N + 1）个和后续写入步骤中的写入电压脉冲的电压值， Ve1 |> | Ve2 | 其中Ve1表示第一至第M擦除步骤（M≥1）的擦除电压脉冲的电压值，Ve2表示（M + 1）次和随后的擦除步骤中的擦除电压脉冲的电压值。第（N + 1）个写入步骤在第M擦除步骤之后。

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