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    • 81. 发明授权
    • Examining a structure formed on a semiconductor wafer using machine learning systems
    • 使用机器学习系统检查在半导体晶片上形成的结构
    • US07280229B2
    • 2007-10-09
    • US11003961
    • 2004-12-03
    • Shifang LiJunwei Bao
    • Shifang LiJunwei Bao
    • G01B11/14G01B11/24G01B7/00
    • G03F7/70625
    • A structure formed on a semiconductor wafer is examined by obtaining a first diffraction signal measured from the structure using an optical metrology device. A first profile is obtained from a first machine learning system using the first diffraction signal obtained as an input to the first machine learning system. The first machine learning system is configured to generate a profile as an output for a diffraction signal received as an input. A second profile is obtained from a second machine learning system using the first profile obtained from the first machine learning system as an input to the second machine learning system. The second machine learning system is configured to generate a diffraction signal as an output for a profile received as an input. The first and second profiles include one or more parameters that characterize one or more features of the structure.
    • 通过使用光学测量装置获得从该结构测量的第一衍射信号来检查形成在半导体晶片上的结构。 使用作为第一机器学习系统的输入获得的第一衍射信号从第一机器学习系统获得第一轮廓。 第一机器学习系统被配置为生成作为作为输入接收的衍射信号的输出的轮廓。 使用从第一机器学习系统获得的第一轮廓作为第二机器学习系统的输入,从第二机器学习系统获得第二轮廓。 第二机器学习系统被配置为产生衍射信号作为作为输入接收的轮廓的输出。 第一和第二简档包括表征结构的一个或多个特征的一个或多个参数。
    • 82. 发明授权
    • Generic interface for an optical metrology system
    • 光学测量系统的通用接口
    • US07064829B2
    • 2006-06-20
    • US10394327
    • 2003-03-20
    • Shifang LiJunwei BaoNickhil JakatdarXinhui Niu
    • Shifang LiJunwei BaoNickhil JakatdarXinhui Niu
    • G01J4/00G01B11/24G01B11/14G01B15/00G01N21/86
    • G03F7/70625G01B11/24G01B11/30G01N21/211G01N21/4788G01N21/956
    • An optical metrology system includes a photometric device with a source configured to generate and direct light onto a structure, and a detector configured to detect light diffracted from the structure and to convert the detected light into a measured diffraction signal. A processing module of the optical metrology system is configured to receive the measured diffraction signal from the detector to analyze the structure. The optical metrology system also includes a generic interface disposed between the photometric device and the processing module. The generic interface is configured to provide the measured diffraction signal to the processing module using a standard set of signal parameters. The standard set of signal parameters includes a reflectance parameter that characterizes the change in intensity of light when reflected on the structure and a polarization parameter that characterizes the change in polarization states of light when reflected on the structure.
    • 光学测量系统包括具有被配置为将光引导到结构上的源的测光装置,以及被配置为检测从该结构衍射的光并将检测到的光转换成测量的衍射信号的检测器。 光学计量系统的处理模块被配置为从检测器接收测量的衍射信号以分析结构。 光学测量系统还包括设置在测光装置和处理模块之间的通用接口。 通用接口被配置为使用标准的信号参数集来将测量的衍射信号提供给处理模块。 标准的信号参数组包括反射参数,其表征当在结构上反射时光的强度变化,以及偏振参数,其表征当在结构上反射时光的偏振状态的变化。
    • 87. 发明授权
    • Parallel profile determination for an optical metrology system
    • 光学测量系统的平行轮廓确定
    • US07469192B2
    • 2008-12-23
    • US11485046
    • 2006-07-11
    • Tri Thanh KhuongJunwei BaoJeffrey A. ChardWei LiuYing ZhuSachin DeshpandePranav ShethHong Qiu
    • Tri Thanh KhuongJunwei BaoJeffrey A. ChardWei LiuYing ZhuSachin DeshpandePranav ShethHong Qiu
    • G06F19/00G01B11/00
    • G01B11/24G01N21/4788G01N21/95607G01N2021/95615G03F7/70625
    • A system to process requests for wafer structure profile determination from optical metrology measurements off a plurality of structures formed on one or more wafer includes a diffraction signal processor, a diffraction signal distributor, and a plurality of profile search servers. The diffraction signal processor is configured to obtain a plurality of measured diffraction signals of the plurality of structures. The diffraction signal distributor is coupled to the diffraction signal processor. The diffraction signal processor is configured to transmit the plurality of measured diffraction signals to the diffraction signal distributor. The plurality of profile search servers is coupled to the diffraction signal distributor. The diffraction signal distributor is configured to distribute the plurality of measured diffraction signals to the plurality of profile search servers. The profile search servers are configured to process in parallel the plurality of measured diffraction signals to determine profiles of the plurality of structures corresponding to the plurality of measured diffraction signals.
    • 包括衍射信号处理器,衍射信号分配器和多个轮廓搜索服务器,用于处理从一个或多个晶片上形成的多个结构的光学测量测量的晶圆结构轮廓确定的请求的系统。 衍射信号处理器被配置为获得多个结构的多个测量的衍射信号。 衍射信号分配器耦合到衍射信号处理器。 衍射信号处理器被配置为将多个测量的衍射信号传输到衍射信号分配器。 多个轮廓搜索服务器耦合到衍射信号分配器。 衍射信号分配器被配置为将多个测量的衍射信号分布到多个简档搜索服务器。 轮廓搜索服务器被配置为并行处理多个测量的衍射信号,以确定与多个测量的衍射信号相对应的多个结构的轮廓。
    • 88. 发明申请
    • Optical metrology using a support vector machine with simulated diffraction signal inputs
    • 光学计量学使用带有模拟衍射信号输入的支持向量机
    • US20080255801A1
    • 2008-10-16
    • US11786870
    • 2007-04-12
    • Wen JinJunwei BaoShifang Li
    • Wen JinJunwei BaoShifang Li
    • G06F17/18G01B11/30
    • G01B11/24G03F7/70625
    • A structure formed on a semiconductor wafer can be examined using a support vector machine. A profile model of the structure is obtained. The profile model is defined by profile parameters that characterize the geometric shape of the structure. A set of values for the profile parameters is obtained. A set of simulated diffraction signals is generated using the set of values for the profile parameters, each simulated diffraction signal characterizing the behavior of light diffracted from the structure. The support vector machine is trained using the set of simulated diffraction signals as inputs to the support vector machine and the set of values for the profile parameters as expected outputs of the support vector machine. A measured diffraction signal off the structure is obtained. The measured diffraction signal is inputted into the trained support vector machine. Values of profile parameters of the structure are obtained as an output from the trained support vector machine.
    • 可以使用支持向量机来检查形成在半导体晶片上的结构。 获得结构的轮廓模型。 轮廓模型由表征结构几何形状的轮廓参数定义。 获得一组轮廓参数的值。 使用一组轮廓参数的值来生成一组模拟衍射信号,每个模拟衍射信号表征从结构衍射的光的行为。 使用一组模拟衍射信号作为支持向量机的输入和用于轮廓参数的值的集合来支持支持向量机作为支持向量机的预期输出。 获得离开结构的测量的衍射信号。 测量的衍射信号被输入到经过训练的支持向量机中。 获得结构的轮廓参数的值作为训练支持向量机的输出。
    • 89. 发明授权
    • Optical metrology model optimization for repetitive structures
    • 重复结构的光学计量学模型优化
    • US07355728B2
    • 2008-04-08
    • US11155406
    • 2005-06-16
    • Shifang LiJunwei BaoHong QuiVictor Liu
    • Shifang LiJunwei BaoHong QuiVictor Liu
    • G01B11/14
    • G03F7/70625G01B11/24G03F7/705
    • An optical metrology model for a repetitive structure is optimized by selecting one or more profile parameters using one or more selection criteria. One or more termination criteria are set, the one or more termination criteria comprising measures of stability of the optical metrology model. The profile shape features of the repetitive structure are characterized using the one or more selected profile parameters. The optical metrology model is optimized using a set of values for the one or more selected profile parameters. One or more profile parameters of the profile of the repetitive structure are determined using the optimized optical metrology model and one or more measured diffraction signals. Values of the one or more termination criteria are calculated using the one or more determined profile parameters. When the calculated values of the one or more termination criteria do not match the one or more set termination criteria, the selection of the one or more profile parameters and/or the characterization of the profile shape features of the repetitive structure are revised.
    • 通过使用一个或多个选择标准选择一个或多个轮廓参数来优化用于重复结构的光学计量学模型。 设置一个或多个终止标准,所述一个或多个终止标准包括光学测量模型的稳定性的测量。 使用一个或多个所选择的轮廓参数来表征重复结构的轮廓形状特征。 光学测量模型使用一组或多个所选配置文件参数的值进行优化。 使用优化的光学测量模型和一个或多个测量的衍射信号来确定重复结构的轮廓的一个或多个轮廓参数。 使用一个或多个确定的简档参数来计算一个或多个终止标准的值。 当一个或多个终止标准的计算值与一个或多个设定的终止标准不匹配时,修改重复结构的一个或多个简档参数的选择和/或轮廓形状特征的表征。