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1. 发明授权

US07478019B2 Multiple tool and structure analysis 有权
标题翻译：多重工具和结构分析
公开(公告)号：US07478019B2
公开(公告)日：2009-01-13
申请号：US11043196
申请日：2005-01-26
申请人： Shahin Zangooie , Youxian Wen , Heath Pois , Jon Opsal
发明人： Shahin Zangooie , Youxian Wen , Heath Pois , Jon Opsal
IPC分类号： G06F17/10
CPC分类号： G01B11/0625 , G05B13/024 , G05B15/02
摘要： Measurement data sets for optical metrology systems can be processed in parallel using Multiple Tool and Structure Analysis (MTSA). In an MTSA procedure, at least one parameter that is common to the data sets can be coupled as a global parameter. Setting this parameter as global allows a regression on each data set to contain fewer fitting parameters, making the process is less complex, requiring less processing capacity, and providing more accurate results. MTSA can analyze multiple structures measured on a single tool, or a single structure measured on separate tools. For a multiple tool recipe, a minimized regression solution can be applied back to each tool to determine whether the recipe is optimized. If the recipe does not provide accurate results for each tool, search parameters and/or spaces can be modified in an iterative manner until an optimized solution is obtained that provides acceptable solutions on each tool.
摘要翻译：光学测量系统的测量数据集可以使用多工具和结构分析（MTSA）并行处理。在MTSA过程中，数据集共有的至少一个参数可以作为全局参数进行耦合。将此参数设置为全局允许每个数据集的回归包含较少的拟合参数，使得该过程不太复杂，需要较少的处理能力，并提供更准确的结果。 MTSA可以分析在单个工具上测量的多个结构，或分析在单独工具上测量的单个结构。对于多重工具配方，可以将最小化回归解决方案应用回每个工具以确定配方是否被优化。如果配方不能为每个工具提供准确的结果，则可以以迭代的方式修改搜索参数和/或空格，直到获得优化的解决方案，为每个工具提供可接受的解决方案。

2. 发明申请

US20060167651A1 Multiple tool and structure analysis 有权
公开(公告)号：US20060167651A1
公开(公告)日：2006-07-27
申请号：US11043196
申请日：2005-01-26
申请人： Shahin Zangooie , Youxian Wen , Heath Pois , Jon Opsal
发明人： Shahin Zangooie , Youxian Wen , Heath Pois , Jon Opsal
IPC分类号： G06F17/18
CPC分类号： G01B11/0625 , G05B13/024 , G05B15/02
摘要： Measurement data sets for optical metrology systems can be processed in parallel using Multiple Tool and Structure Analysis (MTSA). In an MTSA procedure, at least one parameter that is common to the data sets can be coupled as a global parameter. Setting this parameter as global allows a regression on each data set to contain fewer fitting parameters, making the process is less complex, requiring less processing capacity, and providing more accurate results. MTSA can analyze multiple structures measured on a single tool, or a single structure measured on separate tools. For a multiple tool recipe, a minimized regression solution can be applied back to each tool to determine whether the recipe is optimized. If the recipe does not provide accurate results for each tool, search parameters and/or spaces can be modified in an iterative manner until an optimized solution is obtained that provides acceptable solutions on each tool.

3. 发明授权

US06472238B1 Evaluation of etching processes in semiconductors 有权
标题翻译：半导体蚀刻工艺评估
公开(公告)号：US06472238B1
公开(公告)日：2002-10-29
申请号：US09500744
申请日：2000-02-09
申请人： Youxian Wen
发明人： Youxian Wen
IPC分类号： G01R3126
CPC分类号： H01L22/20 , H01J37/32935
摘要： The subject invention relates to an approach for analyzing etched semiconductor samples using optical measurements. In use, one or more optical measurements are taken on an etched semiconductor wafer. At least one of the measurements includes a range of reflectivity measurements in the visible light region. The average reflectivities in the blue and red visible regions are compared to provide information as to whether the sample has been over or under etched. Once this determination is made, a more accurate analysis can be made of the exact structure of the sample. This approach overcomes the difficulties associated with attempting to analyze a sample where the data must be analyzed without knowledge of whether the sample has been over or under etched. The subject approach can also be utilized in other situations which require the treatment of an upper layer of a sample.
摘要翻译：本发明涉及使用光学测量来分析蚀刻的半导体样品的方法。在使用中，在蚀刻的半导体晶片上进行一次或多次光学测量。至少一个测量包括可见光区域中的反射率测量范围。将蓝色和红色可见区域的平均反射率进行比较，以提供关于样品是否已经被蚀刻或蚀刻的信息。一旦做出了这一决定，就可以更准确地分析样品的确切结构。这种方法克服了尝试分析样本数据时必须分析的困难，而不知道样本是否已经被蚀刻或被蚀刻。本发明方法也可用于需要处理样品上层的其它情况。

4. 发明授权

US07523439B2 Determining position accuracy of double exposure lithography using optical metrology 有权
标题翻译：使用光学测量法确定双曝光光刻的位置精度
公开(公告)号：US07523439B2
公开(公告)日：2009-04-21
申请号：US11485045
申请日：2006-07-11
申请人： Youxian Wen , Shifang Li
发明人： Youxian Wen , Shifang Li
IPC分类号： G06F17/50
CPC分类号： G03F7/70633
摘要： In determining position accuracy of double exposure lithography using optical metrology, a mask is exposed to form a first set of repeating patterns on a wafer, where the repeating patterns of the first set have a first pitch. The mask is then exposed again to form a second set of repeating patterns on the wafer. The repeating patterns of the second set of repeating patterns interleave with the repeating patterns of the first set of repeating patterns. The wafer is then developed to form a first set of repeating structures from the first set of repeating patterns and a second set of repeating structures from the second set of repeating patterns. A first diffraction signal is measured of a first repeating structure from the first set of repeating structures and a second repeating structure from the second set of repeating structures, where the first repeating structure is adjacent to the second repeating structure. A second pitch between the first repeating structure and the second repeating structure is determined using the first measured diffraction signal. Position accuracy of the mask used to form the second set of repeating patterns is determined based on the determined second pitch and the first pitch.
摘要翻译：在使用光学测量法确定双曝光光刻的位置精度时，暴露掩模以在晶片上形成第一组重复图案，其中第一组的重复图案具有第一间距。然后再次将掩模曝光以在晶片上形成第二组重复图案。第二组重复图案的重复图案与第一组重复图案的重复图案交错。然后将晶片展开以形成来自第一组重复图案的第一组重复结构和来自第二组重复图案的第二组重复结构。从第一组重复结构测量第一重复结构的第一衍射信号和来自第二组重复结构的第二重复结构，其中第一重复结构与第二重复结构相邻。使用第一测量的衍射信号确定第一重复结构和第二重复结构之间的第二间距。基于确定的第二间距和第一间距来确定用于形成第二组重复图案的掩模的位置精度。

5. 发明申请

US20080007738A1 Evaluating a profile model to characterize a structure to be examined using optical metrology 失效
标题翻译：评估轮廓模型以表征使用光学计量学检查的结构
公开(公告)号：US20080007738A1
公开(公告)日：2008-01-10
申请号：US11484459
申请日：2006-07-10
申请人： Jeffrey A. Chard , Junwei Bao , Youxian Wen , Sanjay Yedur
发明人： Jeffrey A. Chard , Junwei Bao , Youxian Wen , Sanjay Yedur
IPC分类号： G01B11/14
CPC分类号： G01B11/24
摘要： A profile model to characterize a structure to be examined using optical metrology is evaluated by displaying a set of profile parameters that characterizes the profile model. Each profile parameter has a range of values for the profile parameter. For each profile parameter having a range of values, an adjustment tool is displayed for selecting a value for the profile parameter within the range of values. A measured diffraction signal, which was measured using an optical metrology tool, is displayed. A simulated diffraction signal, which was generated based on the values of the profile parameters selected using the adjustment tools for the profile parameters, is displayed. The simulated diffraction signal is overlaid with the measured diffraction signal.
摘要翻译：通过显示表征轮廓模型的一组轮廓参数来评估使用光学计量学来表征待检查结构的轮廓模型。每个配置文件参数都有一个范围的配置文件参数的值。对于具有值范围的每个轮廓参数，显示调整工具，用于在值范围内选择轮廓参数的值。显示使用光学测量工具测量的测量的衍射信号。显示基于使用用于轮廓参数的调整工具选择的轮廓参数的值而产生的模拟衍射信号。模拟衍射信号与测得的衍射信号重叠。

6. 发明申请

US20070040852A1 Global shape definition method for scatterometry 有权
标题翻译：用于散点的全局形状定义方法
公开(公告)号：US20070040852A1
公开(公告)日：2007-02-22
申请号：US11542806
申请日：2006-10-04
申请人： Jon Opsal , Hanyou Chu , Xuelong Cao , Youxian Wen
发明人： Jon Opsal , Hanyou Chu , Xuelong Cao , Youxian Wen
IPC分类号： G09G5/00
CPC分类号： G01N21/4788
摘要： A method for modeling samples includes the use of control points to define lines profiles and other geometric shapes. Each control point used within a model influences a shape within the model. Typically, the control points are used in a connect-the-dots fashion where a set of dots defines the outline or profile of a shape. The layers within the sample are typically modeled independently of the shape defined using the control points. The overall result is to minimize the number of parameters used to model shapes while maintaining the accuracy of the resulting scatterometry models.
摘要翻译：用于建模样本的方法包括使用控制点来定义线轮廓和其他几何形状。模型中使用的每个控制点影响模型内的形状。通常，控制点以连接点的方式使用，其中一组点定义形状的轮廓或轮廓。样品中的层通常被模拟，独立于使用控制点定义的形状。总体结果是最小化用于建模形状的参数数量，同时保持得到的散射测量模型的准确性。

7. 发明授权

US07085676B2 Feed forward critical dimension control 有权
标题翻译：前馈关键维度控制
公开(公告)号：US07085676B2
公开(公告)日：2006-08-01
申请号：US10801023
申请日：2004-03-15
申请人： Jon Opsal , Youxian Wen
发明人： Jon Opsal , Youxian Wen
IPC分类号： G06F11/30 , G01B11/02
CPC分类号： G03F7/70625
摘要： Feed forward techniques can be used to improve optical metrology measurements for microelectronic devices. Metrology tools can be used to measure parameters such as critical dimension, profile, index of refraction, and thickness, as well as various material properties. Three-dimensional feature characterizations can be performed, from which parameters can be extracted and correlations executed. Process fingerprints on a wafer can be tracked after each process step, such that correlation between profile and structure parameters can be established and deviations from specification can be detected instantaneously. A “feed forward” approach allows information relating to dimensions, profiles, and layer thicknesses to be passed on to subsequent process steps. By retaining information from previous process steps, calculations such as profile determinations can be simplified by reducing the number of variables and degrees of freedom used in the calculation.
摘要翻译：前馈技术可用于改进微电子器件的光学测量测量。计量工具可用于测量临界尺寸，型材，折射率和厚度等参数，以及各种材料性能。可以执行三维特征表征，从中可以提取参数并执行相关性。可以在每个处理步骤之后跟踪晶片上的处理指纹，使得可以建立轮廓和结构参数之间的相关性并且可以立即检测到与规格的偏差。 “前馈”方法允许将与尺寸，型材和层厚度相关的信息传递到后续的工艺步骤。通过保留先前工艺步骤的信息，可以通过减少在计算中使用的变量数量和自由度来简化诸如简档确定之类的计算。

8. 发明授权

US06882421B2 Apparatus for optical measurements of nitrogen concentration in thin films 有权
标题翻译：用于光学测量薄膜中氮浓度的装置
公开(公告)号：US06882421B2
公开(公告)日：2005-04-19
申请号：US10886111
申请日：2004-07-07
申请人： Jon Opsal , Youxian Wen
发明人： Jon Opsal , Youxian Wen
IPC分类号： G01N21/21 , G01N21/84 , G01N25/72 , G01J4/00 , G01B11/06
CPC分类号： G01N21/211 , G01N21/8422 , G01N25/72
摘要： Systems and methods are disclosed for evaluating nitrogen levels in thin gate dielectric layers formed on semiconductor samples. In one embodiment, a tool is disclosed which includes both a narrow band ellipsometer and a broadband spectrometer for measuring the sample. The narrowband ellipsometer provides very accurate information about the thickness of the thin film layer while the broadband spectrometer contains information about the nitrogen levels. In another aspect of the subject invention, a thermal and/or plasma wave detection system is used to provide information about the nitrogen levels and nitration processes.
摘要翻译：公开了用于评估在半导体样品上形成的薄栅介质层中的氮含量的系统和方法。在一个实施例中，公开了一种工具，其包括窄带椭偏仪和用于测量样品的宽带光谱仪。窄带椭偏仪提供关于薄膜层的厚度的非常准确的信息，而宽带光谱仪包含关于氮水平的信息。在本发明的另一方面，使用热和/或等离子体波检测系统来提供关于氮水平和硝化过程的信息。

9. 发明授权

US08543557B2 Evolution of library data sets 有权
公开(公告)号：US08543557B2
公开(公告)日：2013-09-24
申请号：US11096845
申请日：2005-04-01
申请人： David M. Aikens , Youxian Wen , Walter Lee Smith
发明人： David M. Aikens , Youxian Wen , Walter Lee Smith
IPC分类号： G06F7/00
CPC分类号： G01N21/47 , G01N21/9501 , G01N21/956 , Y10S707/99936 , Y10S707/99943
摘要： An optical metrology includes a library, a metrology tool and a library evolution tool. The library is generated to include a series of predicted measurements. Each predicted measurement is intended to match the measurements that a metrology device would record when analyzing a corresponding physical structure. The metrology tool compares its empirical measurements to the predicted measurements in the library. If a match is found, the metrology tool extracts a description of the corresponding physical structure from the library. The library evolution tool operates to improve the efficiency of the library. To make these improvements, the library evolution tool statistically analyzes the usage pattern of the library. Based on this analysis, the library evolution tool increases the resolution of commonly used portions of the library. The library evolution tool may also optionally reduce the resolution of less used portions of the library.

10. 发明授权

US07145664B2 Global shape definition method for scatterometry 有权
公开(公告)号：US07145664B2
公开(公告)日：2006-12-05
申请号：US10784619
申请日：2004-02-23
申请人： Jon Opsal , Hanyou Chu , Xuelong Cao , Youxian Wen
发明人： Jon Opsal , Hanyou Chu , Xuelong Cao , Youxian Wen
IPC分类号： G01B11/00 , G06F17/00
CPC分类号： G01N21/4788
摘要： A method for modeling samples includes the use of control points to define lines profiles and other geometric shapes. Each control point used within a model influences a shape within the model. Typically, the control points are used in a connect-the-dots fashion where a set of dots defines the outline or profile of a shape. The layers within the sample are typically modeled independently of the shape defined using the control points. The overall result is to minimize the number of parameters used to model shapes while maintaining the accuracy of the resulting scatterometry models.

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