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    • 84. 发明授权
    • Fourier detection of species migrating in a microchannel
    • 傅立叶检测在微通道中迁移的物种
    • US5699157A
    • 1997-12-16
    • US683080
    • 1996-07-16
    • J. Wallace Parce
    • J. Wallace Parce
    • G01N27/447G01N21/00
    • G01N27/44791G01N27/44721Y10S366/02
    • The present invention provides a microfluidic system for fast, accurate and low cost electrophoretic analysis of materials in the fields of chemistry, biochemistry, biotechnology, molecular biology and numerous other fields. Light from periodically spaced regions along a channel in the microfluidic system are received by a photodetector. The intensity of light received by the photodetector is modulated by the movement of species bands through the channel under electrophoretic forces. By Fourier analysis, the velocity of each species band is determined and the identification of the species is made by its electrophoretic mobility in the channel.
    • 本发明提供了一种用于在化学,生物化学,生物技术,分子生物学等许多领域中快速,准确和低成本电泳分析材料的微流体系统。 沿着微流体系统中的通道的周期性间隔的区域的光由光电检测器接收。 由光电探测器接收的光的强度通过电泳力通过通道的物种带的移动来调制。 通过傅立叶分析,确定每个物种带的速度,并通过其在通道中的电泳迁移率来确定物种的鉴定。
    • 88. 发明授权
    • Gate electrode for a nonvolatile memory cell
    • 用于非易失性存储单元的栅电极
    • US08030161B2
    • 2011-10-04
    • US12121591
    • 2008-05-15
    • Xiangfeng DuanJian ChenJ. Wallace ParceFrancisco A. Leon
    • Xiangfeng DuanJian ChenJ. Wallace ParceFrancisco A. Leon
    • H01L21/336H01L29/788
    • H01L29/792H01L21/28273H01L21/28282H01L29/42324H01L29/42332H01L29/7883H01L29/7885
    • A nonvolatile memory cell includes a substrate comprising a source, drain, and channel between the source and the drain. A tunnel dielectric layer overlies the channel, and a localized charge storage layer is disposed between the tunnel dielectric layer and a control dielectric layer. A gate electrode has a first surface adjacent to the control dielectric layer, and the first surface includes a midsection and two edge portions. According to one embodiment, the midsection defines a plane, and at least one edge portion extends away from the plane. Preferably, the edge portion extending away from the plane converges toward an opposing second surface of the gate electrode. According to another embodiment, the gate electrode of the nonvolatile memory cell includes a first sublayer and a second sublayer of a different width on the first sublayer.
    • 非易失性存储单元包括在源极和漏极之间包括源极,漏极和沟道的衬底。 隧道介电层覆盖在沟道上,并且局部电荷存储层设置在隧道介电层和控制电介质层之间。 栅电极具有与控制电介质层相邻的第一表面,并且第一表面包括中部和两个边缘部分。 根据一个实施例,中段限定一个平面,并且至少一个边缘部分远离平面延伸。 优选地,远离平面延伸的边缘部分朝向栅电极的相对的第二表面会聚。 根据另一实施例,非易失性存储单元的栅极包括第一子层和第一子层上具有不同宽度的第二子层。