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81. 发明授权

US08557094B2 Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum 失效
标题翻译：具有辅助背面磁体的溅射室以提高蚀刻均匀性，并产生磁控管，从而产生钌和钽的持续自溅射
公开(公告)号：US08557094B2
公开(公告)日：2013-10-15
申请号：US11689720
申请日：2007-03-22
申请人： Xianmin Tang , Hua Chung , Rongjun Wang , Tza-Jing Gung , Praburam Gopalraja , Jick Yu , Hong Yang
发明人： Xianmin Tang , Hua Chung , Rongjun Wang , Tza-Jing Gung , Praburam Gopalraja , Jick Yu , Hong Yang
IPC分类号： C23C14/34
CPC分类号： C23C14/0641 , C23C14/345 , C23C14/35 , H01J37/3408 , H01J37/3455
摘要： A plasma sputter chamber and process for sputtering ruthenium and tantalum at low pressure or with self-sustained sputtering (SSS). The source magnetron is strongly unbalanced and of sufficient size to project the unbalanced magnetic field toward the wafer to increase the ionization probability. Sputter etch uniformity is increased by the use of an auxiliary magnet system rotating with the source magnetron but placed towards the center of rotation. It may be a larger, nearly balanced auxiliary magnetron with an outer polarity matching that of the source magnetron or an array of magnets of that polarity. An integrated process includes a directional deposition of the refractory metal and its nitride, a sputter etch, and a flash deposition.
摘要翻译：一种等离子体溅射室和用于在低压或自持溅射（SSS）下溅射钌和钽的工艺。源极磁控管是非常不平衡的，并且具有足够的尺寸以将不平衡磁场投射到晶片以增加电离概率。通过使用与源磁控管一起旋转但是朝向旋转中心放置的辅助磁体系统来增加溅射蚀刻均匀性。它可以是较大的，几乎平衡的辅助磁控管，其外极性与源极磁控管或该极性的磁体阵列的极性匹配。集成工艺包括难熔金属及其氮化物的定向沉积，溅射蚀刻和闪蒸沉积。

82. 发明授权

US07737028B2 Selective ruthenium deposition on copper materials 有权
标题翻译：选择性钌沉积在铜材料上
公开(公告)号：US07737028B2
公开(公告)日：2010-06-15
申请号：US12240822
申请日：2008-09-29
申请人： Rongjun Wang , Hua Chung , Jick M. Yu , Praburam Gopalraja
发明人： Rongjun Wang , Hua Chung , Jick M. Yu , Praburam Gopalraja
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/28562 , C23C16/04 , C23C16/18 , H01L21/76846 , H01L21/76849 , H01L21/76868 , H01L21/76871 , H01L2221/1089
摘要： Embodiments of the invention provide processes for selectively forming a ruthenium-containing film on a copper surface over exposed dielectric surfaces. Thereafter, a copper bulk layer may be deposited on the ruthenium-containing film. In one embodiment, a method for forming layers on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a copper-containing surface and a dielectric surface, exposing the substrate to a ruthenium precursor to selectively form a ruthenium-containing film over the copper-containing surface while leaving exposed the dielectric surface, and depositing a copper bulk layer over the ruthenium-containing film.
摘要翻译：本发明的实施方案提供了在暴露的电介质表面上在铜表面上选择性地形成含钌膜的方法。此后，可以将铜本体层沉积在含钌膜上。在一个实施例中，提供了一种用于在衬底上形成层的方法，其包括将衬底定位在处理室内，其中衬底包含含铜表面和电介质表面，将衬底暴露于钌前体以选择性地形成钌同时留下电介质表面，并在含钌膜上沉积铜体积层。

83. 发明授权

US07686926B2 Multi-step process for forming a metal barrier in a sputter reactor 有权
标题翻译：在溅射反应器中形成金属阻挡层的多步法
公开(公告)号：US07686926B2
公开(公告)日：2010-03-30
申请号：US11119350
申请日：2005-04-29
申请人： Tza-Jing Gung , Xinyu Fu , Arvind Sundarrajan , Edward P. Hammond, IV , Praburam Gopalraja , John C. Forster , Mark A. Perrin , Andrew S. Gillard
发明人： Tza-Jing Gung , Xinyu Fu , Arvind Sundarrajan , Edward P. Hammond, IV , Praburam Gopalraja , John C. Forster , Mark A. Perrin , Andrew S. Gillard
IPC分类号： C23C14/00
CPC分类号： H01J37/3266 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/358 , C23F4/00 , H01J37/321 , H01J37/32623 , H01J37/32688 , H01J37/3408 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76865
摘要： A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.
摘要翻译：在等离子体溅射室中执行的包括从靶的溅射沉积和对衬底的氩溅射蚀刻的多步骤过程。该腔室包括一个四重电磁线圈阵列，该四极电磁线圈阵列围绕室内RF射频线圈背面的等离子体溅射反应器的侧壁外的腔室轴线同轴地布置。可以单独控制线圈电流以产生不同的磁场分布，例如在其中溅射靶被驱动以将靶材料溅射到晶片上的溅射沉积模式和其中RF线圈支撑氩溅射的溅射蚀刻模式之间等离子体。首先以高目标功率和晶片偏置溅射沉积TaN / Ta势垒。以更高的晶片偏压进行氩蚀刻。应用闪光步骤，降低目标功率和晶片偏置。

84. 发明授权

US07659204B2 Oxidized barrier layer 失效
标题翻译：氧化屏障层
公开(公告)号：US07659204B2
公开(公告)日：2010-02-09
申请号：US11691302
申请日：2007-03-26
申请人： Xianmin Tang , Hua Chung , Rongjun Wang , Praburam Gopalraja , Jick M. Yu , Jenn Yue Wang
发明人： Xianmin Tang , Hua Chung , Rongjun Wang , Praburam Gopalraja , Jick M. Yu , Jenn Yue Wang
IPC分类号： H01L21/44
CPC分类号： C23C14/046 , C23C14/0036 , C23C14/0641 , C23C14/083 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76856 , H01L21/76868 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method and resultant produce of forming barrier layer based on ruthenium tantalum in a via or other vertical interconnect structure through a dielectric layer in a multi-level metallization. The RuTa layer in a RuTa/RuTaN bilayer, which may form discontinuous islands, is actively oxidized, preferably in an oxygen plasma, to thereby bridge the gaps between the islands. Alternatively, ruthenium tantalum oxide is reactive sputtered onto the RuTaN or directly onto the underlying dielectric by plasma sputtering a RuTa target in the presence of oxygen.
摘要翻译：在多层金属化中通过介电层在通孔或其它垂直互连结构中形成基于钌钽的阻挡层的方法和所得产物。可能形成不连续岛的RuTa / RuTaN双层中的RuTa层优选在氧等离子体中被有效氧化，从而桥接岛之间的间隙。或者，通过在氧气存在下通过等离子体溅射RuTa靶，氧化钌钽氧化物反应性溅射到RuTaN上或直接沉积到下面的电介质上。

85. 发明申请

US20070117397A1 Remote plasma pre-clean with low hydrogen pressure 有权
标题翻译：远程等离子体预清洁，氢气压力低
公开(公告)号：US20070117397A1
公开(公告)日：2007-05-24
申请号：US11334803
申请日：2006-01-17
申请人： Xinyu Fu , John Forster , Jick Yu , Ajay Bhatnagar , Praburam Gopalraja
发明人： Xinyu Fu , John Forster , Jick Yu , Ajay Bhatnagar , Praburam Gopalraja
IPC分类号： B08B3/00 , H01L21/302
CPC分类号： H01L21/02063 , G03F7/427 , H01J37/32357 , H01J37/32422 , H01J37/3266 , H01L21/02068 , H01L21/67028 , H01L21/67069 , H01L21/76814
摘要： A plasma cleaning method particularly useful for removing photoresist and oxide residue from a porous low-k dielectric with a high carbon content prior to sputter deposition. A remote plasma source produces a plasma primarily of hydrogen radicals. The hydrogen pressure may be kept relatively low, for example, at 30 milliTorr. Optionally, helium may be added to the processing gas with the hydrogen partial pressure held below 150 milliTorr. Superior results are obtained with 70% helium in 400 milliTorr of hydrogen and helium. Preferably, an ion filter, such as a magnetic filter, removes hydrogen and other ions from the output of the remote plasma source and a supply tube from the remote plasma source includes a removable dielectric liner in combination with dielectric showerhead and manifold liner.
摘要翻译：一种等离子体清洗方法，特别适用于在溅射沉积之前从具有高碳含量的多孔低k电介质中除去光致抗蚀剂和氧化物残留物。远程等离子体源产生主要为氢自由基的等离子体。氢气压力可以保持相对较低，例如在30毫乇。任选地，氦气可以被加到处理气体中，氢分压保持在150毫乇以下。在400毫乇的氢气和氦气中，70％的氦气可获得卓越的结果。优选地，诸如磁性过滤器的离子过滤器从远程等离子体源的输出中除去氢和其它离子，并且来自远程等离子体源的供应管包括与介电喷头和歧管衬套组合的可移除绝缘衬垫。

86. 发明申请

US20050263390A1 Multi-step process for forming a metal barrier in a sputter reactor 有权
标题翻译：在溅射反应器中形成金属阻挡层的多步法
公开(公告)号：US20050263390A1
公开(公告)日：2005-12-01
申请号：US11119350
申请日：2005-04-29
申请人： Tza-Jing Gung , Xinyu Fu , Arvind Sundarrajan , Edward Hammond , Praburam Gopalraja , John Forster , Mark Perrin , Andrew Gillard
发明人： Tza-Jing Gung , Xinyu Fu , Arvind Sundarrajan , Edward Hammond , Praburam Gopalraja , John Forster , Mark Perrin , Andrew Gillard
IPC分类号： C23C14/04 , C23C14/06 , C23C14/16 , C23C14/32 , C23C14/35 , C23C16/00 , C23F1/02 , C23F4/00 , H01J37/32 , H01J37/34 , H01L21/285 , H01L21/768
CPC分类号： H01J37/3266 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/358 , C23F4/00 , H01J37/321 , H01J37/32623 , H01J37/32688 , H01J37/3408 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76865
摘要： A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.
摘要翻译：在等离子体溅射室中执行的包括从靶的溅射沉积和对衬底的氩溅射蚀刻的多步骤过程。该腔室包括一个四重电磁线圈阵列，该四极电磁线圈阵列围绕室内RF射频线圈背面的等离子体溅射反应器的侧壁外的腔室轴线同轴地布置。可以单独控制线圈电流以产生不同的磁场分布，例如在其中溅射靶被驱动以将靶材料溅射到晶片上的溅射沉积模式和其中RF线圈支撑氩溅射的溅射蚀刻模式之间等离子体。首先以高目标功率和晶片偏置溅射沉积TaN / Ta势垒。以更高的晶片偏压进行氩蚀刻。应用闪光步骤，降低目标功率和晶片偏置。

87. 发明申请

US20050252765A1 Method and apparatus for forming a barrier layer on a substrate 审中-公开
公开(公告)号：US20050252765A1
公开(公告)日：2005-11-17
申请号：US11185214
申请日：2005-07-19
申请人： Hong Zhang , Xianmin Tang , Praburam Gopalraja , John Forster , Jick Yu
发明人： Hong Zhang , Xianmin Tang , Praburam Gopalraja , John Forster , Jick Yu
IPC分类号： C23C14/04 , C23C14/32 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76843 , C23C14/046 , H01L21/2855 , H01L21/76844 , H01L21/76846
摘要： A first method is provided for forming a barrier layer on a substrate by sputter-depositing a tantalum nitride layer on a substrate having (1) a metal feature formed on the substrate; (2) a dielectric layer formed over the metal feature; and (3) a via formed in the dielectric layer so as to expose the metal feature. The via has side walls and a bottom, and a width of about 0.18 microns or less. The tantalum nitride layer is deposited on the side walls and bottom of the via and on a field region of the dielectric layer; and has a thickness of at least about 200 angstroms on the field region. The first method also includes sputter-depositing a tantalum layer on the substrate, in the same chamber. The tantalum layer having a thickness of less than about 100 angstroms on the field region. Other aspects are provided.

88. 发明授权

US06783639B2 Coils for generating a plasma and for sputtering 有权
公开(公告)号：US06783639B2
公开(公告)日：2004-08-31
申请号：US10052951
申请日：2002-01-17
申请人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
发明人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
IPC分类号： C23C1434
CPC分类号： H01J37/3438 , H01J37/3402
摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

89. 发明授权

US06368469B1 Coils for generating a plasma and for sputtering 失效
公开(公告)号：US06368469B1
公开(公告)日：2002-04-09
申请号：US08851946
申请日：1997-05-06
申请人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
发明人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
IPC分类号： C23C1434
CPC分类号： H01J37/3438 , H01J37/3402
摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

90. 发明授权

US6146508A Sputtering method and apparatus with small diameter RF coil 失效
标题翻译：具有小直径射频线圈的溅射方法和设备
公开(公告)号：US6146508A
公开(公告)日：2000-11-14
申请号：US64355
申请日：1998-04-22
申请人： Praburam Gopalraja , Zheng Xu , Ralf Hofmann
发明人： Praburam Gopalraja , Zheng Xu , Ralf Hofmann
IPC分类号： H05H1/46 , C23C14/34 , C23C14/40 , H01J37/32 , H01J37/34
CPC分类号： H01J37/321 , H01J37/3405
摘要： An apparatus and method for sputtering ionized material onto a workpiece with the aid of a plasma which ionizes the material, utilizing: a support member having a workpiece support area for supporting a workpiece that has a given diameter; a target constituting a source of material to be sputtered; and a coil located between the target and the workpiece support for creating a plasma which ionizes material sputtered from the target, the coil enclosing a region, the support member being maintained at a potential which causes ionized material to be attracted to the support member. The coil is configured and operated to shape the plasma in a manner to promote redirection of material sputtered from the center of the target back to the target.
摘要翻译：借助于使材料电离的等离子体将离子化物质溅射到工件上的装置和方法，所述装置和方法利用：具有用于支撑具有给定直径的工件的工件支撑区域的支撑构件; 构成要溅射的材料来源的目标; 以及位于所述目标和所述工件支撑件之间的线圈，用于产生等离子体，其将从所述靶溅射的材料电离，所述线圈包围区域，所述支撑构件保持在使电离材料被吸引到所述支撑构件的电位。线圈被配置和操作以使等离子体成形以促进从目标中心溅射到靶材的材料的重定向。

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