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71. 发明授权

US08877072B2 Three-dimensional fractal graduated-branching hierarchical structures and fabrication method thereof 有权
$Three-dimensional fractal graduated-branching hierarchical structures and fabrication method thereof$
标题翻译：三维分形分支分级分层结构及其制作方法
公开(公告)号：US08877072B2
公开(公告)日：2014-11-04
申请号：US13647725
申请日：2012-10-09
申请人： Ranjana Sahai , Paolo Corradi
发明人： Ranjana Sahai , Paolo Corradi
IPC分类号： C23F1/00 , B29C59/02 , C03C15/00 , C03C25/68 , B29C35/08
CPC分类号： B29C59/026 , B29C59/02 , B29C2035/0811 , C03C15/00 , C03C25/68
摘要： A method to fabricate a hierarchical graduated-branched structure that grows in a three-dimensional pattern down to fractal-branching, nano-size level is detailed. The fractal patterning is accomplished on a three-dimensional (i.e., non-planar) surface, by exposing the surface to a properly focused particle beam, which causes the spontaneous growth of graduated branches all over the surface. The structure can be fabricated with a single material and the fractal-patterning is done in a one step process. No addition of material is required for the formation of each branch. The fractal graduated branching structure can then be molded in order to produce replicas.
摘要翻译：详细描述了一种以三维图案生长到分形分支纳米级别的分层分级分支结构的方法。通过将表面暴露于适当聚焦的粒子束，在三维（即非平面）表面上实现分形图案化，这导致了整个表面上的分级分支的自发生长。该结构可以用单一材料制造，并且分形图案化在一步法中进行。每个分支的形成不需要添加材料。然后可以模制分形刻痕分支结构以产生副本。

72. 发明授权

US08828257B2 Plasma processing apparatus and operation method thereof 有权
标题翻译：等离子体处理装置及其操作方法
公开(公告)号：US08828257B2
公开(公告)日：2014-09-09
申请号：US12379641
申请日：2009-02-26
申请人： Hiroho Kitada , Kazunori Nakamoto , Yosuke Sakai
发明人： Hiroho Kitada , Kazunori Nakamoto , Yosuke Sakai
IPC分类号： H05H1/00 , H01L21/306 , C03C15/00 , C03C25/68 , C23F1/00 , H01J37/32 , H01L21/687
CPC分类号： H01L21/68742 , H01J37/32082 , H01J37/3244 , H01J2237/20
摘要： In a plasma processing apparatus including a processing chamber in a vacuum container to form plasma in the processing chamber in which pressure is reduced, a sample stage in lower part of inside of the processing chamber and having an upper surface on which a wafer to be processed by plasma is put, a plurality of pins in the sample stage to be moved in vertical direction so that the pins abut against rear side of the wafer to move the wafer up and down over the upper surface of the sample stage, and a plurality of openings formed in the upper surface of the sample stage so that the pins are moved in the openings, gas is fed from supply ports communicating with the openings into the processing chamber through the openings when the wafer is not put on the upper surface of the sample stage.
摘要翻译：在等离子体处理装置中，包括在真空容器中的处理室，以在压力降低的处理室中形成等离子体，处理室内部的下部的样品台，其上表面上加有待处理的晶片通过等离子体放置，样品台中的多个针在垂直方向上移动，使得销抵靠晶片的后侧，以将晶片上下移动到样品台的上表面上，并且多个形成在样品台的上表面中的开口，使得销在开口中移动，当晶片未放置在样品的上表面上时，气体通过开口从与开口连通的供应端口进入处理室阶段。

73. 发明授权

US08828256B2 Method for fabricating carbon nanotube film 有权
标题翻译：碳纳米管膜的制造方法
公开(公告)号：US08828256B2
公开(公告)日：2014-09-09
申请号：US12319595
申请日：2009-01-08
申请人： Chen Feng , Kai Liu , Yong-Chao Zhai , Kai-Li Jiang , Shou-Shan Fan
发明人： Chen Feng , Kai Liu , Yong-Chao Zhai , Kai-Li Jiang , Shou-Shan Fan
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C01B31/02 , B82Y30/00 , B82Y40/00
CPC分类号： C01B31/0233 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B32/168 , C01B2202/08 , Y10S977/734 , Y10S977/742
摘要： A method for making a carbon nanotube film includes the steps of providing an array of carbon nanotubes, treating the array of carbon nanotubes by plasma, and pulling out a carbon nanotube film from the array of carbon nanotubes treated by the plasma.
摘要翻译：制造碳纳米管膜的方法包括以下步骤：提供碳纳米管阵列，通过等离子体处理碳纳米管阵列，并从由等离子体处理的碳纳米管阵列拉出碳纳米管膜。

74. 发明授权

US08815746B2 Apparatus and method for producing microcomponents and use of 有权
标题翻译：用于生产微量元件和使用的装置和方法
公开(公告)号：US08815746B2
公开(公告)日：2014-08-26
申请号：US13599985
申请日：2012-08-30
申请人： Josef Mathuni
发明人： Josef Mathuni
IPC分类号： G01L21/30 , G01R31/00 , H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： B81C99/0085 , B81C2201/032 , H01J37/32357
摘要： An apparatus and the use of such an apparatus and method for producing microcomponents with component structures are presented which are generated in a process chamber on a substrate according to the LIGA method for example and are stripped from the enclosing photoresist with the help of a cooled remote plasma source.
摘要翻译：本发明提供了一种用于制造具有部件结构的微型部件的这种装置和方法的使用方法，其在例如基于LIGA方法的基板上的处理室中产生，并且借助于冷却的远程等离子体源

75. 发明授权

US08790527B1 Method and system for manufacturing tapered waveguide structures in an energy assisted magnetic recording head 有权
标题翻译：在能量辅助磁记录头中制造锥形波导结构的方法和系统
公开(公告)号：US08790527B1
公开(公告)日：2014-07-29
申请号：US13069023
申请日：2011-03-22
申请人： Guanghong Luo , Ming Jiang , Danning Yang , Yunfei Li
发明人： Guanghong Luo , Ming Jiang , Danning Yang , Yunfei Li
IPC分类号： H01L21/302 , H01L21/461 , B29D11/00 , C03C15/00 , C03C25/68
CPC分类号： B29D11/00663
摘要： A method for providing waveguide structures for an energy assisted magnetic recording (EAMR) transducer is described. The waveguide structures have a plurality of widths. At least one waveguide layer is provided. Mask structure(s) corresponding to the waveguide structures and having a pattern are provided on the waveguide layer(s). The mask structure(s) include a planarization stop layer, a planarization assist layer on the planarization stop layer, and a hard mask layer on the planarization assist layer. The planarization assist layer has a low density. The pattern of the mask structure(s) is transferred to the waveguide layer(s). Optical material(s) that cover the waveguide layer(s) and a remaining portion of the mask structure(s) are provided. The optical material(s) have a density that is at least twice the low density of the planarization assist layer. The method also includes performing a planarization configured to remove at least a portion of the optical material(s).
摘要翻译：描述了一种用于提供能量辅助磁记录（EAMR）换能器的波导结构的方法。波导结构具有多个宽度。提供至少一个波导层。对应于波导结构并具有图案的掩模结构设置在波导层上。掩模结构包括平坦化停止层，平坦化停止层上的平坦化辅助层和平坦化辅助层上的硬掩模层。平坦化助剂层具有低密度。掩模结构的图案被传送到波导层。提供了覆盖波导层和掩模结构的剩余部分的光学材料。光学材料的密度至少是平坦化辅助层的低密度的两倍。该方法还包括执行被配置为去除至少一部分光学材料的平坦化。

76. 发明授权

US08758635B2 Method for making thermoacoustic element 有权
标题翻译：制作热声元件的方法
公开(公告)号：US08758635B2
公开(公告)日：2014-06-24
申请号：US13303332
申请日：2011-11-23
申请人： Kai-Li Jiang , Xiao-Yang Lin , Lin Xiao , Shou-Shan Fan
发明人： Kai-Li Jiang , Xiao-Yang Lin , Lin Xiao , Shou-Shan Fan
IPC分类号： C03C15/00 , C03C25/68 , H04R23/00 , B82Y30/00 , C23F1/02 , B82Y10/00 , B29C65/18
CPC分类号： H04R23/002 , B29C65/18 , B82Y10/00 , B82Y30/00 , C23F1/02 , Y10T156/1057
摘要： The present disclosure relates to a method for making a thermoacoustic element. In the method, a graphene film is arranged on a metal substrate. A nonmetal substrate is stacked with the graphene film located on the metal substrate to form a laminate structure. The graphene film is sandwiched between the nonmetal substrate and the metal substrate. The metal substrate is removed from the stacked structure. A number of through-holes are formed in the nonmetal substrate. The graphene film is exposed through the plurality of through-holes.
摘要翻译：本发明涉及制作热声元件的方法。在该方法中，在金属基板上设置石墨烯膜。堆叠非金属基底，石墨烯膜位于金属基底上以形成层压结构。石墨烯膜夹在非金属基底和金属基底之间。金属基板从堆叠结构中移除。在非金属基材中形成多个通孔。石墨烯膜通过多个通孔露出。

77. 发明授权

US08734664B2 Method of differential counter electrode tuning in an RF plasma reactor 有权
标题翻译： RF等离子体反应器中差分对电极调谐的方法
公开(公告)号：US08734664B2
公开(公告)日：2014-05-27
申请号：US13958898
申请日：2013-08-05
申请人： Applied Materials, Inc.
发明人： Yang Yang , Kartik Ramaswamy , Kenneth S. Collins , Steven Lane , Douglas A. Buchberger, Jr. , Lawrence Wong , Nipun Misra
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01J37/32064 , H01J37/32082 , H01J37/32174 , H01J37/32623 , H01J37/32642 , H01J2237/2001 , H01L21/67109 , H01L21/6833
摘要： A method of controlling distribution of a plasma parameter in a plasma reactor having an RF-driven electrode and two (or more) counter electrodes opposite the RF driven electrode and facing different portions of the process zones. The method includes providing two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and governing the variable reactances to change distribution of a plasma parameter such as plasma ion density or ion energy.
摘要翻译：一种控制等离子体反应器中等离子体参数分布的方法，其具有RF驱动电极和与RF驱动电极相对的两个（或更多个）对置电极并且面对处理区的不同部分。该方法包括提供连接在相应的对置电极和接地之间的两个（或多个）可变电抗，并且控制可变电抗以改变诸如等离子体离子密度或离子能量之类的等离子体参数的分布。

78. 发明授权

US08696923B2 Composite of steel and resin and method for manufacturing same 有权
标题翻译：钢和树脂复合材料及其制造方法
公开(公告)号：US08696923B2
公开(公告)日：2014-04-15
申请号：US13608274
申请日：2012-09-10
申请人： Masanori Naritomi , Naoki Andoh
发明人： Masanori Naritomi , Naoki Andoh
IPC分类号： C03C15/00 , C03C25/68
CPC分类号： B29C45/14311 , B29C65/44 , B29C65/4835 , B29C65/4875 , B29C65/488 , B29C65/8207 , B29C65/8215 , B29C65/8253 , B29C66/02 , B29C66/02245 , B29C66/026 , B29C66/1122 , B29C66/30325 , B29C66/43 , B29C66/71 , B29C66/7212 , B29C66/73161 , B29C66/73775 , B29C66/7392 , B29C66/742 , B29C66/7461 , B29C66/8248 , B29C66/8322 , B29K2305/02 , B29K2305/12 , B29K2309/02 , B29K2309/04 , B29K2705/00 , B29K2995/0072 , B29L2016/00 , B32B15/08 , B32B15/18 , B32B15/20 , B32B27/36 , Y10T29/4998 , Y10T428/12472 , Y10T428/24355 , Y10T428/25 , Y10T428/252 , Y10T428/254 , Y10T428/258 , Y10T428/259 , Y10T428/31511 , Y10T428/31678 , Y10T428/31681 , Y10T428/31692 , Y10T428/31855 , B29K2307/04 , B29K2077/00 , B29K2309/08 , B29K2277/10 , B29K2067/006 , B29K2081/04 , B29K2077/10 , B29K2023/00
摘要： In the composite, an aluminum-plated steel sheet and a resin are securely and integrally joined together. Through chemical etching, the aluminum-plated steel sheet is caused to have a surface configuration, in which three-dimensional protrusions having shapes with a minor diameter of at least 0.3 μm and a major diameter of at least 3 μm are scattered over a plain part and a portion covered with shallow fine recesses with a diameter of 20 to 50 nm in a state of being distributed adjacent to each other on the plain part accounts for 30 to 50% of the surface area of the plain part. The surface of the three-dimensional protrusions is mainly ceramic containing silicon and the plain part is mainly ceramic containing aluminum. The resin is joined through injection molding with the aluminum-plated steel sheet having been inserted into a metallic mold.
摘要翻译：在复合材料中，镀铝钢板和树脂牢固地整体地结合在一起。通过化学蚀刻，使镀铝钢板具有表面形状，其中具有至少0.3μm的小直径和大直径至少3μm的形状的三维突起散布在平面部分上并且在平原部分彼此相邻分布的状态下覆盖直径为20至50nm的浅细小凹槽的部分占平原部分的表面积的30至50％。三维突起的表面主要是含硅的陶瓷，平原部分主要是含有铝的陶瓷。树脂通过注塑成型而被插入金属模具中的镀铝钢板连接。

79. 发明授权

US08685264B2 Slide member and method for the production thereof 有权
标题翻译：滑动构件及其制造方法
公开(公告)号：US08685264B2
公开(公告)日：2014-04-01
申请号：US13822138
申请日：2011-09-12
申请人： Masataka Kaido , Atsushi Suzuki , Masatsugu Shimomura , Hiroshi Yabu , Yuji Hirai
发明人： Masataka Kaido , Atsushi Suzuki , Masatsugu Shimomura , Hiroshi Yabu , Yuji Hirai
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： F16C33/02 , F16C33/103 , F16C33/14 , F16C2220/60 , F16C2240/40 , F16C2240/44
摘要： A slide member includes a substrate that is made of a metal material and has a sliding surface with a plurality of microdimples formed therein. Each of the microdimple has a circular opening, the microdimples are arranged in regular intervals in a hexagonal close-packed configuration, and the area ratio of the openings of all the microdimples to the entire sliding surface is in the range of 50 to 80%.
摘要翻译：滑动构件包括由金属材料制成并且具有形成有多个微型微粒的滑动面的基板。每个微型微型物具有圆形开口，微型粉末以六边形紧密构造的规则间隔布置，并且所有微小的微孔的开口面积与整个滑动面的面积比在50％至80％的范围内。

80. 发明授权

US08641916B2 Plasma etching apparatus, plasma etching method and storage medium 有权
标题翻译：等离子体蚀刻装置，等离子体蚀刻方法和存储介质
公开(公告)号：US08641916B2
公开(公告)日：2014-02-04
申请号：US12692913
申请日：2010-01-25
申请人： Koichi Yatsuda , Yoshinobu Ooya , Shin Okamoto , Hiromasa Mochiki
发明人： Koichi Yatsuda , Yoshinobu Ooya , Shin Okamoto , Hiromasa Mochiki
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/302 , H01L21/461
CPC分类号： H01J37/32146 , H01J37/32091 , H01J37/32697
摘要： A plasma etching method for forming a hole in an etching target film by a plasma processing apparatus is provided. The apparatus includes an RF power supply for applying RF power for plasma generation to at least one of upper and lower electrodes, and a DC power supply for applying minus DC voltage to the upper electrode. A first condition that plasma is generated by turning on the RF power supply and minus DC voltage is applied to the upper electrode and a second condition that the plasma is extinguished by turning off the RF power supply and minus DC voltage is applied to the upper electrode are alternately repeated. Etching is performed by positive ions in the plasma under the first condition and negative ions are supplied into the hole by the DC voltage to neutralize positive ions in the hole under the second condition.
摘要翻译：提供了一种通过等离子体处理装置在蚀刻靶膜中形成孔的等离子体蚀刻方法。该装置包括用于向上电极和下电极中的至少一个施加用于等离子体产生的RF功率的RF电源，以及用于向上电极施加负DC电压的DC电源。通过接通RF电源产生等离子体的第一条件和负DC电压被施加到上电极，并且通过关闭RF电源而将等离子体熄灭的第二条件并且将负DC电压施加到上电极交替重复。在第一条件下，通过正离子在等离子体中进行蚀刻，并且通过DC电压将负离子供给到孔中，以在第二条件下中和孔中的正离子。

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