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    • 1. 发明授权
    • Method and system for manufacturing tapered waveguide structures in an energy assisted magnetic recording head
    • 在能量辅助磁记录头中制造锥形波导结构的方法和系统
    • US08790527B1
    • 2014-07-29
    • US13069023
    • 2011-03-22
    • Guanghong LuoMing JiangDanning YangYunfei Li
    • Guanghong LuoMing JiangDanning YangYunfei Li
    • H01L21/302H01L21/461B29D11/00C03C15/00C03C25/68
    • B29D11/00663
    • A method for providing waveguide structures for an energy assisted magnetic recording (EAMR) transducer is described. The waveguide structures have a plurality of widths. At least one waveguide layer is provided. Mask structure(s) corresponding to the waveguide structures and having a pattern are provided on the waveguide layer(s). The mask structure(s) include a planarization stop layer, a planarization assist layer on the planarization stop layer, and a hard mask layer on the planarization assist layer. The planarization assist layer has a low density. The pattern of the mask structure(s) is transferred to the waveguide layer(s). Optical material(s) that cover the waveguide layer(s) and a remaining portion of the mask structure(s) are provided. The optical material(s) have a density that is at least twice the low density of the planarization assist layer. The method also includes performing a planarization configured to remove at least a portion of the optical material(s).
    • 描述了一种用于提供能量辅助磁记录(EAMR)换能器的波导结构的方法。 波导结构具有多个宽度。 提供至少一个波导层。 对应于波导结构并具有图案的掩模结构设置在波导层上。 掩模结构包括平坦化停止层,平坦化停止层上的平坦化辅助层和平坦化辅助层上的硬掩模层。 平坦化助剂层具有低密度。 掩模结构的图案被传送到波导层。 提供了覆盖波导层和掩模结构的剩余部分的光学材料。 光学材料的密度至少是平坦化辅助层的低密度的两倍。 该方法还包括执行被配置为去除至少一部分光学材料的平坦化。
    • 5. 发明授权
    • Abutted exchange bias design for sensor stabilization
    • 传感器稳定的基准交换偏置设计
    • US07283337B2
    • 2007-10-16
    • US11074270
    • 2005-03-04
    • Masanori SakaiKunliang ZhangKenichi TakanoChyu-Jiuh TorngYunfei LiPo-Kang Wang
    • Masanori SakaiKunliang ZhangKenichi TakanoChyu-Jiuh TorngYunfei LiPo-Kang Wang
    • G11B5/127
    • G11B5/3932
    • A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.
    • 用于偏置磁读头内的MR传感器中的自由层的硬偏置(HB)结构包括具有大的负磁致伸缩(λS S S S S)值的主偏置层。 研磨后装置中的压缩应力引起强的面内各向异性,其有效地提供纵向偏压以稳定传感器。 主偏置层形成在两个FM层之间,并且至少一个AFM层设置在上FM层上方或下FM层的下方。 另外,可以存在作为HB结构中的底层的Ta / Ni或Ta / NiFe种子层。 与传统的邻接结交换偏置设计相比,本文所述的HB结构在类似的不对称西格玛下产生更高的输出幅度,并显着降低旁瓣发生。 此外,由于主偏置层用作侧屏蔽,所以实现了具有相似轨道宽度的较小MRWu。