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71. 发明申请

US20080149856A1 TECHNIQUES FOR REDUCING CONTAMINATION DURING ION IMPLANTATION 失效
标题翻译：在离子植入时减少污染的技术
公开(公告)号：US20080149856A1
公开(公告)日：2008-06-26
申请号：US11615386
申请日：2006-12-22
申请人： Russell J. LOW
发明人： Russell J. LOW
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/09 , H01J2237/022 , H01J2237/024 , H01J2237/057 , H01J2237/31705 , H01J2237/31711
摘要： Techniques for reducing contamination during ion implantation is disclosed. In one particular exemplary embodiment, the techniques may be realized by an apparatus for reducing contamination during ion implantation. The apparatus may comprise a platen to hold a workpiece for ion implantation by an ion beam. The apparatus may also comprise a mask, located in front of the platen, to block the ion beam and at least a portion of contamination ions from reaching a first portion of the workpiece during ion implantation of a second portion of the workpiece. The apparatus may further comprise a control mechanism, coupled to the platen, to reposition the workpiece to expose the first portion of the workpiece for ion implantation.
摘要翻译：公开了用于减少离子注入期间污染的技术。在一个特定的示例性实施例中，可以通过用于减少离子注入期间的污染的装置来实现这些技术。该装置可以包括用于通过离子束保持用于离子注入的工件的压板。该设备还可以包括位于压板前面的掩模，以在工件的第二部分的离子注入期间阻挡离子束并且至少一部分污染物离子到达工件的第一部分。该装置还可以包括耦合到压板的控制机构，以重新定位工件以暴露工件的第一部分用于离子注入。

72. 发明授权

US07365346B2 Ion-implanting apparatus, ion-implanting method, and device manufactured thereby 失效
标题翻译：离子注入装置，离子注入方法和由此制造的装置
公开(公告)号：US07365346B2
公开(公告)日：2008-04-29
申请号：US11023467
申请日：2004-12-29
申请人： Yuichiro Sasaki , Bunji Mizuno
发明人： Yuichiro Sasaki , Bunji Mizuno
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/08 , H01J37/304 , H01J2237/024 , H01J2237/0455 , H01J2237/0653 , H01J2237/08 , H01J2237/24535 , H01J2237/30472 , H01J2237/31703
摘要： An ion-implanting apparatus and method can dynamically control a beam current value with time and does not change energy. This ion-implanting apparatus controls a dynamic change in beam current value with time by giving feedback on the beam current value measured with a beam current measuring device.
摘要翻译：离子注入装置和方法可以随时间动态地控制束电流值，并且不改变能量。该离子注入装置通过对用束电流测量装置测量的束电流值进行反馈来控制束电流值随时间的动态变化。

73. 发明申请

US20050201246A1 Particle-optical projection system 审中-公开
标题翻译：粒子投影系统
公开(公告)号：US20050201246A1
公开(公告)日：2005-09-15
申请号：US11080578
申请日：2005-03-15
申请人： Herbert Buschbeck , Gertraud Lammer , Alfred Chalupka , Robert Nowak , Elmar Platzgummer , Gerhard Stengl
发明人： Herbert Buschbeck , Gertraud Lammer , Alfred Chalupka , Robert Nowak , Elmar Platzgummer , Gerhard Stengl
IPC分类号： H01L21/027 , G03F7/20 , G11B7/09 , H01J37/02 , H01J37/147 , H01J37/15 , H01J37/20 , H01J37/21 , H01J37/304 , H01J37/317
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/304 , H01J2237/024 , H01J2237/10 , H01J2237/216 , H01J2237/30455
摘要： In a particle-optical projection system (32) a pattern (B) is imaged onto a target (tp) by means of energetic electrically charged particles. The pattern is represented in a patterned beam (pb) of said charged particles emerging from the object plane through at least one cross-over (c); it is imaged into an image (S) with a given size and distortion. To compensate for the Z-deviation of the image (S) position from the actual positioning of the target (tp) (Z denotes an axial coordinate substantially parallel to the optical axis cx), without changing the size of the image (S), the system comprises a position detection means (ZD) for measuring the Z-position of several locations of the target (tp), a control means (33) for calculating modifications (cr) of selected lens parameters of the final particle-optical lens (L2) and controlling said lens parameters according to said modifications.
摘要翻译：在粒子光学投影系统（32）中，通过能量带电粒子将图案（B）成像到目标（tp）上。所述图案通过至少一个交叉（c）从所述物体平面出射的所述带电粒子的图案化束（pb）中表示; 它被成像为具有给定大小和失真的图像（S）。为了补偿图像（S）位置与目标的实际定位（tp）（Z表示基本上平行于光轴cx的轴向坐标）的Z偏差，而不改变图像（S）的尺寸，该系统包括用于测量目标（tp）的若干位置的Z位置的位置检测装置（ZD），用于计算最终粒子光学透镜的选定透镜参数的修改（cr）的控制装置（33） L 2），并根据所述修改来控制所述透镜参数。

74. 发明授权

US06864495B2 Device for generating an ion beam 有权
标题翻译：用于产生离子束的装置
公开(公告)号：US06864495B2
公开(公告)日：2005-03-08
申请号：US10472090
申请日：2002-03-26
申请人： Jacques Gierak , Yvon Lagadec , Albert Septier
发明人： Jacques Gierak , Yvon Lagadec , Albert Septier
IPC分类号： H01J27/26 , H01J27/02 , H01J27/22 , H01J37/08 , H01J37/317 , H01J37/20
CPC分类号： H01J27/26 , B82Y30/00 , H01J27/022 , H01J27/22 , H01J37/08 , H01J37/09 , H01J37/3007 , H01J37/3045 , H01J37/3056 , H01J2237/024 , H01J2237/0805 , H01J2237/1501 , H01J2237/1502 , H01J2237/30433 , H01J2237/3174
摘要： An ion beam generation device including an ion source, an extraction mechanism for ions emitted by the source, an accelerating mechanism of the ions thus extracted, a selector for the ions thus accelerated, and an electrostatic optical system for focusing the selected ions along a first axis. Further, a mechanism varies the distance between the ion source and the extraction means, this distance being counted along a second axis parallel to the first axis and constituting the axis of the ion beam emitted by the source. The device may be particularly applied to the manufacture of nanostructures.
摘要翻译：一种离子束产生装置，包括离子源，由源发射的离子的提取机构，由此提取的离子的加速机构，用于这样加速的离子的选择器;以及静电光学系统，用于沿着第一轴。此外，机构改变离子源和提取装置之间的距离，该距离沿着平行于第一轴线的第二轴计数并且构成由源发射的离子束的轴线。该装置可以特别地应用于纳米结构的制造。

75. 发明申请

US20030085353A1 Spot grid array electron imaging system 有权
标题翻译：点阵阵列电子成像系统
公开(公告)号：US20030085353A1
公开(公告)日：2003-05-08
申请号：US09986137
申请日：2001-11-07
发明人： Gilad Almogy , Oren Reches
IPC分类号： H01J037/28
CPC分类号： H01J37/28 , H01J2237/024 , H01J2237/0635 , H01J2237/1503 , H01J2237/20228 , H01J2237/2817
摘要： A high data-rate electron beam spot-grid array imaging system is provided that overcomes the low resolution and severe linearity requirements of prior art systems. Embodiments include an imaging system comprising an electron beam generator for simultaneously irradiating an array of spots spaced apart from each other on a surface of an object to be imaged, and a detector for collecting backscattered and/or secondary electrons emitted as a result of the interaction of the spots with the surface of the object to form an image of the irradiated portions of the object surface. A mechanical system moves the substrate in a direction which is nearly parallel to an axis of the array of spots such that as the substrate is moved across the spot array in the scan direction (the y-direction) the spots trace a path which leaves no gaps in the mechanical cross-scan direction (the x-direction). A compensator, such as a servo or a movable mirror, compensates for mechanical inaccuracies in the moving stage, thereby increasing imaging accuracy. In other embodiments, multiple detectors placed at different angles to the substrate collect electrons to provide multiple perspective imaging of the substrate surface.
摘要翻译：提供了高数据速率电子束点阵阵列成像系统，其克服了现有技术系统的低分辨率和严格的线性要求。实施例包括一种成像系统，包括电子束发生器，用于同时照射待成像物体的表面上彼此间隔开的点阵列，以及用于收集由于相互作用而发射的反向散射和/或二次电子的检测器具有物体表面的斑点以形成物体表面的照射部分的图像。机械系统使基板沿着几乎平行于点阵列的轴线的方向移动，使得当基板在扫描方向（y方向）上移动穿过光点阵列时，斑点追踪不留下的路径机械横向扫描方向（x方向）的间隙。诸如伺服或可移动镜的补偿器补偿了移动台中的机械不准确度，从而提高了成像精度。在其他实施例中，以与衬底不同的角度放置的多个检测器收集电子以提供衬底表面的多个透视成像。

76. 发明申请

US20030066976A1 Apparatus to decelrate and control ion beams to improve the total quality of ion implantation 有权
标题翻译：减少和控制离子束的装置，以提高离子注入的总质量
公开(公告)号：US20030066976A1
公开(公告)日：2003-04-10
申请号：US10299443
申请日：2002-11-19
发明人： Jiong Chen , Zhmin Wan , Qing Qian
IPC分类号： H01J037/317
CPC分类号： H01J37/3171 , H01J37/244 , H01J2237/024 , H01J2237/04756 , H01J2237/057 , H01J2237/24405 , H01J2237/24528
摘要： An ion implantation method is disclosed in this invention. The disclosed method is for implanting a target wafer with ions extracted from an ion source traveling along an original ion beam path. The method includes steps of a) employing a set of deceleration electrodes disposed along the original ion beam path before the target wafer for decelerating and deflecting the ion beam to the target wafer; and b) employing a charged particle deflecting means disposed between the ion source and the set of deceleration electrodes for deflecting the ion beam away from original ion beam path and projecting to the set of electrodes with an incident angle for the set of electrodes to deflect the ion beam back to the original ion beam path for implanting the target wafer.
摘要翻译：在本发明中公开了一种离子注入方法。所公开的方法是用离子源从原始离子束路径移动的离子注入目标晶片。该方法包括以下步骤：a）在目标晶片之前沿着原始离子束路径采用一组减速电极，用于使离子束减速和偏转到目标晶圆; 以及b）使用设置在所述离子源和所述一组减速电极之间的带电粒子偏转装置，用于使所述离子束偏离原始离子束路径，并以所述电极组的入射角向所述电极组突出以使所述电极组偏转离子束返回到原始离子束路径，用于植入目标晶片。

77. 发明授权

US5036209A Fabrication method for semiconductor devices and transparent mask for charged particle beam 失效
标题翻译：半导体器件的制造方法和带电粒子束的透明掩模
公开(公告)号：US5036209A
公开(公告)日：1991-07-30
申请号：US424733
申请日：1989-10-20
申请人： Toyotaka Kataoka , Kiichi Sakamoto
发明人： Toyotaka Kataoka , Kiichi Sakamoto
IPC分类号： G03F1/00 , G03F1/20 , G03F7/20 , H01J37/09 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F7/2047 , H01J37/09 , H01J37/3174 , H01J2237/024 , H01J2237/15 , H01J2237/31776
摘要： A charged particle beam exposure apparatus includes a charged particle beam generator, a deflector device for deflecting the charged particle beam electromagnetically to individually illuminate small areas of a pattern forming region formed on a transparent mask, apparatus for moving the transparent mask mechanically, and the various components required for reducing the charged particle beam pattern through the mask and projecting the same onto a semiconductor device substrate to be exposed. A semiconductor device is fabricated using such apparatus by moving the mask mechanically to position a pattern forming region at a predetermined exposure position. The pattern forming region includes a plurality of small areas which can be individually selected by deflecting the charged particle beam when the pattern forming region is positioned at the exposure position. Each individual area is of a size such that the entirety thereof is exposed when the beam is deflected onto such area.
摘要翻译：在带电粒子束曝光装置中，包括用于产生带电粒子束（20）的装置（21-23），用于电磁地偏转带电粒子束（20）的偏转装置（24）并照射多个构成形成在透明掩模（26）上的多个聚集隔板（27）的一个聚集隔板（27）的小隔板（28）; 用于机械地移动透明掩模（26）的掩模移动装置和用于减小通过掩模（26）图案化的带电粒子束（20）的减少曝光装置（30-34），并将其暴露于半导体器件（35）上），制造半导体器件（35）的方法包括以下步骤：通过掩模移动装置将多个聚集隔板（27）中的一个聚集隔板（27）移动到预定位置; 通过所述偏转装置（24）从所述移动的聚集隔板（27）的所述多个小隔板（28）中选择一个小隔板（28）; 并且通过所述还原曝光装置（30-34）减小所选择的小分区（28）并将其暴露在所述半导体器件（35）上。

78. 发明公开

US20240128044A1 APPARATUS OF PLURAL CHARGED-PARTICLE BEAMS 审中-公开
公开(公告)号：US20240128044A1
公开(公告)日：2024-04-18
申请号：US18392494
申请日：2023-12-21
申请人： ASML Netherlands B.V.
发明人： Weiming REN , Xuedong LIU , Xuerang HU , Zhongwei CHEN
IPC分类号： H01J37/147 , H01J37/06 , H01J37/10 , H01J37/28
CPC分类号： H01J37/1474 , H01J37/06 , H01J37/10 , H01J37/1477 , H01J37/1478 , H01J37/28 , H01J2237/024 , H01J2237/0453 , H01J2237/0492 , H01J2237/103 , H01J2237/1205 , H01J2237/1516 , H01J2237/1534 , H01J2237/1536
摘要： A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

79. 发明授权

US11961627B2 Vacuum chamber arrangement for charged particle beam generator 有权
公开(公告)号：US11961627B2
公开(公告)日：2024-04-16
申请号：US18326935
申请日：2023-05-31
申请人： ASML Netherlands B.V.
发明人： Alexander Hendrik Vincent Van Veen , Willem Henk Urbanus , Marco Jan-Jaco Wieland
IPC分类号： H01J37/30 , G21K1/02 , G21K5/04 , H01J37/12 , H01J37/16 , H01J37/317
CPC分类号： G21K5/04 , G21K1/02 , H01J37/12 , H01J37/16 , H01J37/3007 , H01J37/3177 , H01J2237/002 , H01J2237/0213 , H01J2237/0216 , H01J2237/024 , H01J2237/0262 , H01J2237/032 , H01J2237/1207 , H01J2237/1215 , H01J2237/16 , H01J2237/1825 , H01J2237/30472
摘要： The invention relates to charged particle beam generator comprising a charged particle source for generating a charged particle beam, a collimator system comprising a collimator structure with a plurality of collimator electrodes for collimating the charged particle beam, a beam source vacuum chamber comprising the charged particle source, and a generator vacuum chamber comprising the collimator structure and the beam source vacuum chamber within a vacuum, wherein the collimator system is positioned outside the beam source vacuum chamber. Each of the beam source vacuum chamber and the generator vacuum chamber may be provided with a vacuum pump.

80. 发明授权

US11929229B2 Semiconductor wafer 有权
公开(公告)号：US11929229B2
公开(公告)日：2024-03-12
申请号：US18196548
申请日：2023-05-12
申请人： mi2-factory GmbH
发明人： Florian Krippendorf , Constantin Csato
IPC分类号： H01J37/317 , C23C14/18 , C23C14/48 , H01J37/05 , H01J37/147 , H01J37/20 , H01L21/04 , H01L29/32
CPC分类号： H01J37/05 , C23C14/18 , C23C14/48 , H01J37/1477 , H01J37/20 , H01J37/317 , H01J37/3171 , H01L21/046 , H01L29/32 , H01J2237/024 , H01J2237/057 , H01J2237/1518 , H01J2237/20214
摘要： A semiconductor wafer includes a first surface and an implantation area adjacent to the first surface and a certain distance away from the first surface, the implantation area including implanted particles and defects. A defect concentration in the implantation area deviates by less than 5% from a maximum defect concentration in the implantation area.

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