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1. 发明授权

US4980567A Charged particle beam exposure system using line beams 失效
标题翻译：使用线束的带电粒子束曝光系统
公开(公告)号：US4980567A
公开(公告)日：1990-12-25
申请号：US329833
申请日：1989-03-28
申请人： Hiroshi Yasuda , Junichi Kai , Toyotaka Kataoka , Yasushi Takahashi , Shinji Miyaki , Kiichi Sakamoto
发明人： Hiroshi Yasuda , Junichi Kai , Toyotaka Kataoka , Yasushi Takahashi , Shinji Miyaki , Kiichi Sakamoto
IPC分类号： H01J37/30 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3177
摘要： In a charged particle beam exposure system, a line of individual blanking apertures (39.sub.0 to 39.sub.255) is provided to form a line of beams which are individually blanked and unblanked by applying voltages to electrodes within the blanking apertures.

2. 发明授权

US5036209A Fabrication method for semiconductor devices and transparent mask for charged particle beam 失效
标题翻译：半导体器件的制造方法和带电粒子束的透明掩模
公开(公告)号：US5036209A
公开(公告)日：1991-07-30
申请号：US424733
申请日：1989-10-20
申请人： Toyotaka Kataoka , Kiichi Sakamoto
发明人： Toyotaka Kataoka , Kiichi Sakamoto
IPC分类号： G03F1/00 , G03F1/20 , G03F7/20 , H01J37/09 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F7/2047 , H01J37/09 , H01J37/3174 , H01J2237/024 , H01J2237/15 , H01J2237/31776
摘要： A charged particle beam exposure apparatus includes a charged particle beam generator, a deflector device for deflecting the charged particle beam electromagnetically to individually illuminate small areas of a pattern forming region formed on a transparent mask, apparatus for moving the transparent mask mechanically, and the various components required for reducing the charged particle beam pattern through the mask and projecting the same onto a semiconductor device substrate to be exposed. A semiconductor device is fabricated using such apparatus by moving the mask mechanically to position a pattern forming region at a predetermined exposure position. The pattern forming region includes a plurality of small areas which can be individually selected by deflecting the charged particle beam when the pattern forming region is positioned at the exposure position. Each individual area is of a size such that the entirety thereof is exposed when the beam is deflected onto such area.
摘要翻译：在带电粒子束曝光装置中，包括用于产生带电粒子束（20）的装置（21-23），用于电磁地偏转带电粒子束（20）的偏转装置（24）并照射多个构成形成在透明掩模（26）上的多个聚集隔板（27）的一个聚集隔板（27）的小隔板（28）; 用于机械地移动透明掩模（26）的掩模移动装置和用于减小通过掩模（26）图案化的带电粒子束（20）的减少曝光装置（30-34），并将其暴露于半导体器件（35）上），制造半导体器件（35）的方法包括以下步骤：通过掩模移动装置将多个聚集隔板（27）中的一个聚集隔板（27）移动到预定位置; 通过所述偏转装置（24）从所述移动的聚集隔板（27）的所述多个小隔板（28）中选择一个小隔板（28）; 并且通过所述还原曝光装置（30-34）减小所选择的小分区（28）并将其暴露在所述半导体器件（35）上。

3. 发明授权

US07538390B2 Semiconductor device with PMOS and NMOS transistors 有权
标题翻译：具有PMOS和NMOS晶体管的半导体器件
公开(公告)号：US07538390B2
公开(公告)日：2009-05-26
申请号：US11241108
申请日：2005-09-30
申请人： Junli Wang , Toyotaka Kataoka , Masaki Saito
发明人： Junli Wang , Toyotaka Kataoka , Masaki Saito
IPC分类号： H01L29/94 , H01L21/8238
CPC分类号： H01L27/1203 , H01L21/2007 , H01L21/823807 , H01L21/84 , H01L29/7842 , H01L29/78684
摘要： A semiconductor device including an NMOS region and a PMOS region in the same substrate, wherein the semiconductor device includes a strained Si layer which is provided on the substrate in the NMOS region and in which the surface has a plane orientation different from that of the substrate, and a strained SiGe layer which is provided on the substrate in the PMOS region and which is composed of a stained layer having the same plane orientation as that of the surface of the substrate; and a method of manufacturing the same.
摘要翻译：一种在同一衬底中包括NMOS区域和PMOS区域的半导体器件，其中半导体器件包括设置在NMOS区域中的衬底上并且其表面具有不同于衬底的平面取向的应变Si层以及设置在PMOS区域的基板上并由与基板表面相同的面取向的染色层构成的应变SiGe层; 及其制造方法。

4. 发明申请

US20060076622A1 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060076622A1
公开(公告)日：2006-04-13
申请号：US11241108
申请日：2005-09-30
申请人： Junli Wang , Toyotaka Kataoka , Masaki Saito
发明人： Junli Wang , Toyotaka Kataoka , Masaki Saito
IPC分类号： H01L27/12
CPC分类号： H01L27/1203 , H01L21/2007 , H01L21/823807 , H01L21/84 , H01L29/7842 , H01L29/78684
摘要： A semiconductor device including an NMOS region and a PMOS region in the same substrate, wherein the semiconductor device includes a strained Si layer which is provided on the substrate in the NMOS region and in which the surface has a plane orientation different from that of the substrate, and a strained SiGe layer which is provided on the substrate in the PMOS region and which is composed of a stained layer having the same plane orientation as that of the surface of the substrate; and a method of manufacturing the same.
摘要翻译：一种在同一衬底中包括NMOS区域和PMOS区域的半导体器件，其中半导体器件包括设置在NMOS区域中的衬底上并且其表面具有不同于衬底的平面取向的应变Si层以及设置在PMOS区域的基板上并由与基板表面相同的面取向的染色层构成的应变SiGe层; 及其制造方法。

5. 发明授权

US06797323B1 Method of forming silicon oxide layer 失效
标题翻译：形成氧化硅层的方法
公开(公告)号：US06797323B1
公开(公告)日：2004-09-28
申请号：US08979259
申请日：1997-11-26
申请人： Akihide Kashiwagi , Kazuhiko Tokunaga , Toshihiko Suzuki , Hideki Kimura , Toyotaka Kataoka , Atsushi Suzuki , Shinji Tanaka
发明人： Akihide Kashiwagi , Kazuhiko Tokunaga , Toshihiko Suzuki , Hideki Kimura , Toyotaka Kataoka , Atsushi Suzuki , Shinji Tanaka
IPC分类号： C23C1640
CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/02337 , H01L21/31662
摘要： A method of forming a silicon oxide layer comprising initiating formation of a silicon oxide layer on a surface of a silicon layer by an oxidation method using wet gas at an ambient temperature at which no silicon atom is eliminated from the surface of the silicon layer, and then, forming the silicon oxide layer up to a predetermined thickness by an oxidation method using wet gas.
摘要翻译：一种形成氧化硅层的方法，包括：在硅层的表面没有硅原子的环境温度下，通过使用湿气体的氧化法在硅层的表面上引发氧化硅层的形成，以及然后，通过使用湿气的氧化法形成氧化硅层达预定厚度。

6. 发明申请

US20090014812A1 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090014812A1
公开(公告)日：2009-01-15
申请号：US12168427
申请日：2008-07-07
申请人： Junli Wang , Tomoyuki Hirano , Toyotaka Kataoka , Yoshiya Hagimoto
发明人： Junli Wang , Tomoyuki Hirano , Toyotaka Kataoka , Yoshiya Hagimoto
IPC分类号： H01L21/8236 , H01L27/088
CPC分类号： H01L21/82385 , H01L21/823425 , H01L21/823468 , H01L21/823475 , H01L21/823835 , H01L21/823857 , H01L21/823871 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.
摘要翻译：本文公开了一种半导体器件，包括：形成在半导体衬底上的第一组晶体管; 以及形成在所述半导体基板上的第二组晶体管，每个晶体管的工作电压低于所述第一组中的每个晶体管; 其中第一组中的每个晶体管包括通过第一栅极绝缘膜形成在半导体衬底上的第一栅电极和形成在第一栅电极上的硅化物层; 第二组中的每个晶体管包括形成在用于栅极形成的沟槽中的第二栅电极，其通过第二栅极绝缘膜形成在半导体衬底上方的绝缘膜中; 并且形成保护膜以覆盖第一晶体管组的每个第一栅电极上的硅化物层。

7. 发明授权

US06239044B1 Apparatus for forming silicon oxide film and method of forming silicon oxide film 失效
公开(公告)号：US06239044B1
公开(公告)日：2001-05-29
申请号：US09322020
申请日：1999-05-28
申请人： Akihide Kashiwagi , Toyotaka Kataoka , Toshihiko Suzuki
发明人： Akihide Kashiwagi , Toyotaka Kataoka , Toshihiko Suzuki
IPC分类号： H01L2131
CPC分类号： C30B29/06 , C23C8/02 , C23C8/16 , C30B33/005 , H01L21/31612
摘要： An apparatus for forming a silicon oxide film which has a process chamber and is for thermally oxidizing a surface of a silicon layer by introducing water vapor into the process chamber, and which further has dew-formation prevention/evaporation means for preventing dew formation in the process chamber and/or evaporating dew in the process chamber.

8. 发明申请

US20110269280A1 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110269280A1
公开(公告)日：2011-11-03
申请号：US13181583
申请日：2011-07-13
申请人： Junli Wang , Tomoyuki Hirano , Toyotaka Kataoka , Yoshiya Hagimoto
发明人： Junli Wang , Tomoyuki Hirano , Toyotaka Kataoka , Yoshiya Hagimoto
IPC分类号： H01L21/8234
CPC分类号： H01L21/82385 , H01L21/823425 , H01L21/823468 , H01L21/823475 , H01L21/823835 , H01L21/823857 , H01L21/823871 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.
摘要翻译：一种半导体器件，包括：形成在半导体衬底上的第一组晶体管; 以及形成在所述半导体基板上的第二组晶体管，每个晶体管的工作电压低于所述第一组中的每个晶体管; 其中第一组中的每个晶体管包括通过第一栅极绝缘膜形成在半导体衬底上的第一栅电极和形成在第一栅电极上的硅化物层; 第二组中的每个晶体管包括形成在用于栅极形成的沟槽中的第二栅电极，其通过第二栅极绝缘膜形成在半导体衬底上方的绝缘膜中; 并且形成保护膜以覆盖第一晶体管组的每个第一栅电极上的硅化物层。

9. 发明授权

US07994603B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07994603B2
公开(公告)日：2011-08-09
申请号：US12168427
申请日：2008-07-07
申请人： Junli Wang , Tomoyuki Hirano , Toyotaka Kataoka , Yoshiya Hagimoto
发明人： Junli Wang , Tomoyuki Hirano , Toyotaka Kataoka , Yoshiya Hagimoto
IPC分类号： H01L21/70
CPC分类号： H01L21/82385 , H01L21/823425 , H01L21/823468 , H01L21/823475 , H01L21/823835 , H01L21/823857 , H01L21/823871 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.
摘要翻译：本文公开了一种半导体器件，包括：形成在半导体衬底上的第一组晶体管; 以及形成在所述半导体基板上的第二组晶体管，每个晶体管的工作电压低于所述第一组中的每个晶体管; 其中第一组中的每个晶体管包括通过第一栅极绝缘膜形成在半导体衬底上的第一栅电极和形成在第一栅电极上的硅化物层; 第二组中的每个晶体管包括形成在用于栅极形成的沟槽中的第二栅电极，其通过第二栅极绝缘膜形成在半导体衬底上方的绝缘膜中; 并且形成保护膜以覆盖第一晶体管组的每个第一栅电极上的硅化物层。

10. 发明授权

US06589349B2 Apparatus for forming silicon oxide film and method of forming silicon oxide film 失效
标题翻译：用于形成氧化硅膜的设备和形成氧化硅膜的方法
公开(公告)号：US06589349B2
公开(公告)日：2003-07-08
申请号：US09867001
申请日：2001-05-29
申请人： Akihide Kashiwagi , Toyotaka Kataoka , Toshihiko Suzuki
发明人： Akihide Kashiwagi , Toyotaka Kataoka , Toshihiko Suzuki
IPC分类号： C23L1600
CPC分类号： C30B29/06 , C23C8/02 , C23C8/16 , C30B33/005 , H01L21/31612
摘要： An apparatus for forming a silicon oxide film which has a process chamber and is for thermally oxidizing a surface of a silicon layer by introducing water vapor into the process chamber, and which further has dew-formation prevention/evaporation means for preventing dew formation in the process chamber and/or evaporating dew in the process chamber.
摘要翻译：一种用于形成氧化硅膜的装置，其具有处理室，用于通过将水蒸气引入处理室来热氧化硅层的表面，并且还具有防止/蒸发装置，用于防止在处理室和/或在处理室中蒸发出露水。

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