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71. 发明授权

US08664594B1 Electron-optical system for high-speed and high-sensitivity inspections 失效
标题翻译：用于高速和高灵敏度检测的电子光学系统
公开(公告)号：US08664594B1
公开(公告)日：2014-03-04
申请号：US13095574
申请日：2011-04-27
申请人： Xinrong Jiang , Liqun Han , Mohammed Tahmassebpur , Salam Harb , John D. Greene
发明人： Xinrong Jiang , Liqun Han , Mohammed Tahmassebpur , Salam Harb , John D. Greene
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： H01J37/28 , G01N2223/418 , G01N2223/611 , H01J2237/004 , H01J2237/2817
摘要： The present disclosure provides an electron beam column with substantially improved resolution and/or throughput for inspecting manufactured substrates. The electron beam column comprises an electron gun, a scanner, an objective lens, and a detector. In accordance with one embodiment, the electron gun includes a gun lens having a flip-up pole piece configuration. In accordance with another embodiment, the scanner comprises a dual scanner having a pre-scanner and a main scanner, and the detector may be configured between the electron gun and the pre-scanner. In accordance with another embodiment, the electron beam column includes a continuously-variable aperture configured to select a beam current. Other embodiments relate to methods of using an electron beam column for automated inspection of manufactured substrates. In one embodiment, for example, an aperture size is adjusted to achieve a minimum spot size given a selected beam current and a column-condition domain being used.
摘要翻译：本公开提供了一种电子束柱，其具有用于检查制造的基底的显着改善的分辨率和/或通过量。电子束柱包括电子枪，扫描仪，物镜和检测器。根据一个实施例，电子枪包括具有翻转极片构造的枪形透镜。根据另一个实施例，扫描器包括具有预扫描器和主扫描器的双扫描器，并且检测器可以配置在电子枪和预扫描器之间。根据另一实施例，电子束列包括被配置为选择束电流的连续可变孔径。其他实施例涉及使用电子束柱来自动检查制造的基板的方法。在一个实施例中，例如，在给定所选择的束电流和使用列条件域的情况下，调节孔径尺寸以实现最小斑点尺寸。

72. 发明授权

US08592287B2 Overlay alignment mark and method of detecting overlay alignment error using the mark 有权
标题翻译：覆盖对齐标记和使用标记检测覆盖对齐错误的方法
公开(公告)号：US08592287B2
公开(公告)日：2013-11-26
申请号：US13196200
申请日：2011-08-02
申请人： Chi-Yuan Shih , I-Hsiung Huang , Heng-Hsin Liu
发明人： Chi-Yuan Shih , I-Hsiung Huang , Heng-Hsin Liu
IPC分类号： H01L21/00
CPC分类号： G01N23/04 , G01N2223/418 , G01N2223/611 , G03F7/70633
摘要： A method comprises providing a semiconductor substrate having a first layer and a second layer above the first layer. The first layer haw a plurality of first patterns, vias or contacts. The second layer has second patterns corresponding to the first patterns, vias or contacts. The second patterns have a plurality of in-plane offsets relative to the corresponding first patterns, vias or contacts. A scanning electron microscope is used to measure line edge roughness (LER) values of the second patterns. An overlay error is calculated between the first and second layers based on the measured LER values.
摘要翻译：一种方法包括提供在第一层上方具有第一层和第二层的半导体衬底。第一层包含多个第一图案，通孔或接触。第二层具有对应于第一图案，通孔或触点的第二图案。第二图案相对于对应的第一图案，通孔或触点具有多个面内偏移。扫描电子显微镜用于测量第二种图案的线条粗糙度（LER）值。基于测量的LER值，在第一层和第二层之间计算覆盖误差。

73. 发明申请

US20130235182A1 DEFECT INSPECTION METHOD AND DEVICE THEREFOR 有权
标题翻译：缺陷检查方法及其设备
公开(公告)号：US20130235182A1
公开(公告)日：2013-09-12
申请号：US13881378
申请日：2011-10-26
申请人： Makoto Ono , Takafumi Chida , Takehiro Hirai , Masakazu Kanezawa
发明人： Makoto Ono , Takafumi Chida , Takehiro Hirai , Masakazu Kanezawa
IPC分类号： H04N7/18
CPC分类号： H04N7/18 , G01N23/2251 , G01N2223/3301 , G01N2223/418 , G01N2223/611 , H01J37/28 , H01J2237/21 , H01J2237/2811 , H01J2237/2815 , H01J2237/2817
摘要： In imaging a sample using an electron microscope, in order to reduce a time for focusing, a scanning range of a Z coordinate is reduced to complete focusing by obtaining SEM images such that: for a first predetermined number of portions, focal positions of an electron beam in obtaining each SEM image are moved in a predetermined range; then, a curved surface shape of the surface of the sample is estimated by using information relating to the focal positions of the electron beam in the first predetermined number of portions; after the images are taken, the range in which the focal positions of the electron beam are moved for scanning the electron beam on the surface of the sample is made to be narrower than the predetermined range by using the curved surface information estimated, thereby performing scanning to take the images of the sample.
摘要翻译：在使用电子显微镜对样品进行成像时，为了减少聚焦时间，通过获得SEM图像来减小Z坐标的扫描范围以完成聚焦，使得：对于第一预定数量的部分，电子的焦点位置获得每个SEM图像的光束在预定范围内移动; 然后，通过使用与第一预定数量的电子束的焦点位置有关的信息来估计样品表面的曲面形状; 在拍摄图像之后，通过使用估计的曲面信息使电子束的焦点位置移动以扫描样品表面上的电子束的范围比预定范围窄，从而执行扫描拍摄样品的图像。

74. 发明授权

US08507858B2 Pattern measurement apparatus and pattern measurement method 有权
标题翻译：图案测量装置和图案测量方法
公开(公告)号：US08507858B2
公开(公告)日：2013-08-13
申请号：US13652110
申请日：2012-10-15
申请人： Advantest Corporation
发明人： Hiroshi Fukaya , Yoshiaki Ogiso
IPC分类号： H01J37/26 , H01J37/28 , H01J37/244
CPC分类号： G01N23/225 , G01N2223/611 , H01J2237/221 , H01J2237/24578 , H01J2237/248 , H01J2237/2817
摘要： Referring to design data for a sample, a measurement region is defined at a portion in the design data which has no step in an edge of a pattern. In addition, an edge as a characteristic portion is detected from the design data, and an edge as a characteristic portion corresponding to the characteristic portion of the design data is detected from a secondary electron image. Then, the measurement region is positioned and located in a secondary electron image based on a positional relationship between the edge of the design data and the edge of the secondary electron image. A width of the pattern is measured on the basis of a distance between the two edges included in the measurement region thus located.
摘要翻译：参考样本的设计数据，在图案边缘没有步骤的设计数据的部分定义测量区域。此外，从设计数据检测作为特征部分的边缘，并且从二次电子图像检测作为与设计数据的特征部分相对应的特征部分的边缘。然后，基于设计数据的边缘与二次电子图像的边缘之间的位置关系，将测量区域定位并位于二次电子图像中。基于包括在如此定位的测量区域中的两个边缘之间的距离来测量图案的宽度。

75. 发明授权

US08450123B2 Oxygen diffusion evaluation method of oxide film stacked body 有权
标题翻译：氧化膜层叠体的氧扩散评价方法
公开(公告)号：US08450123B2
公开(公告)日：2013-05-28
申请号：US13213458
申请日：2011-08-19
申请人： Yutaka Okazaki , Keitaro Imai , Atsuo Isobe , Shunpei Yamazaki
发明人： Yutaka Okazaki , Keitaro Imai , Atsuo Isobe , Shunpei Yamazaki
IPC分类号： H01L21/66
CPC分类号： G01N23/2258 , G01N2223/611
摘要： Experience shows that, in a material containing oxygen as a main component, an excess or deficiency of trace amounts of oxygen with respect to a stoichiometric composition, or the like affects properties of the material. An oxygen diffusion evaluation method of an oxide film stacked body includes the steps of: measuring a quantitative value of one of oxygen isotopes of a substrate including a first oxide film and a second oxide film which has an existence proportion of an oxygen isotope different from an existence proportion of an oxygen isotope in the first oxide film in a depth direction, by secondary ion mass spectrometry; and evaluating the one of the oxygen isotopes diffused from the first oxide film to the second oxide film.
摘要翻译：经验表明，在含氧作为主要成分的材料中，相对于化学计量组成等的痕量氧的过量或不足影响材料的性能。氧化膜层叠体的氧扩散评价方法包括以下步骤：测量包含第一氧化物膜和第二氧化物膜的基板的氧同位素的定量值，所述氧化物存在比例与氧同位素通过二次离子质谱法在深度方向上在第一氧化膜中的氧同位素的存在比例; 并评估从第一氧化物膜扩散到第二氧化物膜的氧同位素中的一种。

76. 发明申请

US20130032712A1 OVERLAY ALIGNMENT MARK AND METHOD OF DETECTING OVERLAY ALIGNMENT ERROR USING THE MARK 有权
标题翻译：覆盖对齐标记和使用标记检测覆盖对齐错误的方法
公开(公告)号：US20130032712A1
公开(公告)日：2013-02-07
申请号：US13196200
申请日：2011-08-02
申请人： Chi-Yuan SHIH , I-Hsiung HUANG , Heng-Hsin LIU
发明人： Chi-Yuan SHIH , I-Hsiung HUANG , Heng-Hsin LIU
IPC分类号： G01N23/00 , H01L23/544
CPC分类号： G01N23/04 , G01N2223/418 , G01N2223/611 , G03F7/70633
摘要： A method comprises providing a semiconductor substrate having a first layer and a second layer above the first layer. The first layer haw a plurality of first patterns, vias or contacts. The second layer has second patterns corresponding to the first patterns, vias or contacts. The second patterns have a plurality of in-plane offsets relative to the corresponding first patterns, vias or contacts. A scanning electron microscope is used to measure line edge roughness (LER) values of the second patterns. An overlay error is calculated between the first and second layers based on the measured LER values.
摘要翻译：一种方法包括提供在第一层上方具有第一层和第二层的半导体衬底。第一层包含多个第一图案，通孔或接触。第二层具有对应于第一图案，通孔或触点的第二图案。第二图案相对于对应的第一图案，通孔或触点具有多个面内偏移。扫描电子显微镜用于测量第二种图案的线条粗糙度（LER）值。基于测量的LER值，在第一层和第二层之间计算覆盖误差。

77. 发明申请

US20120292502A1 HIGH ELECTRON ENERGY BASED OVERLAY ERROR MEASUREMENT METHODS AND SYSTEMS 有权
标题翻译：基于高电子能量的覆盖误差测量方法和系统
公开(公告)号：US20120292502A1
公开(公告)日：2012-11-22
申请号：US13111838
申请日：2011-05-19
申请人： Moshe Langer , Ofer Adan , Ram Peltinov , Yoram Uziel , Ori Shoval
发明人： Moshe Langer , Ofer Adan , Ram Peltinov , Yoram Uziel , Ori Shoval
IPC分类号： G01N23/20 , G01N23/00
CPC分类号： G01N23/2251 , G01N2223/61 , G01N2223/611
摘要： A method, a system and a computer readable medium are provided. The method may include obtaining or receiving first area information representative of a first area of a first layer of an inspected object; wherein the inspected object further comprises a second layer that comprises a second area; wherein the second layer is buried under the first layer; directing electrons of a primary electron beam to interact with the first area; directing electrons of the primary electron beam to interact with the second area; generating detection signals responsive to electrons that were scattered or reflected from at least one of the first and second areas; and determining at least one spatial relationship between at least one feature of the first area and at least one feature of the second area based on the detection signals and on the first area information.
摘要翻译：提供了一种方法，系统和计算机可读介质。该方法可以包括获得或接收表示被检查对象的第一层的第一区域的第一区域信息; 其中被检查物体还包括包括第二区域的第二层; 其中所述第二层被埋在所述第一层下面; 引导一次电子束的电子与第一区域相互作用; 引导所述一次电子束的电子与所述第二区域相互作用; 产生响应于从第一和第二区域中的至少一个散射或反射的电子的检测信号; 以及基于所述检测信号和所述第一区域信息，确定所述第一区域的至少一个特征与所述第二区域的至少一个特征之间的至少一个空间关系。

78. 发明申请

US20120241606A1 MULTIPLE-BEAM SYSTEM FOR HIGH-SPEED ELECTRON-BEAM INSPECTION 有权
标题翻译：用于高速电子束检测的多光束系统
公开(公告)号：US20120241606A1
公开(公告)日：2012-09-27
申请号：US13095585
申请日：2011-04-27
申请人： Liqun Han , Xinrong Jiang , John D. Greene
发明人： Liqun Han , Xinrong Jiang , John D. Greene
IPC分类号： G01N23/04 , G01N23/00
CPC分类号： G01N23/2251 , G01N2223/102 , G01N2223/611 , H01J37/04 , H01J37/28 , H01J2237/0435 , H01J2237/04926 , H01J2237/1205 , H01J2237/15 , H01J2237/2446
摘要： One embodiment disclosed relates to a multiple-beamlet electron beam imaging apparatus for imaging a surface of a target substrate. A beam splitter lens array is configured to split the illumination beam to form a primary beamlet array, and a scanning system is configured to scan the primary beamlet array over an area of the surface of the target substrate. In addition, a detection system configured to detect individual secondary electron beamlets. Another embodiment disclosed relates to a method of imaging a surface of a target substrate using a multiple-beamlet electron beam column. Other features and embodiments are also disclosed.
摘要翻译：公开的一个实施例涉及用于对目标基板的表面进行成像的多子束电子束成像装置。分束器透镜阵列被配置为分离照明光束以形成主子束阵列，并且扫描系统被配置为在目标基板的表面的区域上扫描主子束阵列。另外，被配置为检测单个二次电子束的检测系统。所公开的另一实施例涉及使用多子束电子束柱对目标衬底的表面进行成像的方法。还公开了其它特征和实施例。

79. 发明授权

US08094924B2 E-beam defect review system 有权
标题翻译：电子束缺陷检查系统
公开(公告)号：US08094924B2
公开(公告)日：2012-01-10
申请号：US12335458
申请日：2008-12-15
申请人： Jack Jau , Zhongwei Chen , Yi Xiang Wang , Chung-Shih Pan , Joe Wang , Xuedong Liu , Weiming Ren , Wei Fang
发明人： Jack Jau , Zhongwei Chen , Yi Xiang Wang , Chung-Shih Pan , Joe Wang , Xuedong Liu , Weiming Ren , Wei Fang
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G01N23/04 , G01N2223/102 , G01N2223/426 , G01N2223/611 , G06T2207/10061 , G06T2207/30148
摘要： An apparatus comprises an imaging unit to image a wafer to be reviewed, wherein imaging unit is the modified SORIL column. The modified SORIL column includes a focusing sub-system to do micro-focusing due to a wafer surface topology, wherein the focusing sub-system verifies the position of a grating image reflecting from the wafer surface to adjust the focus; and a surface charge control to regulate the charge accumulation due to electron irradiation during the review process, wherein the gaseous molecules are injected under a flood gun beam rather than under a primary beam. The modified SORIL column further includes a storage unit for storing wafer design database; and a host computer to manage defect locating, defect sampling, and defect classifying, wherein the host computer and storage unit are linked by high speed network.
摘要翻译：一种装置包括成像单元以对待审查的晶片进行成像，其中成像单元是经修改的SORIL柱。改进的SORIL柱包括由于晶片表面拓扑而进行微聚焦的聚焦子系统，其中聚焦子系统验证从晶片表面反射的光栅图像的位置以调整焦点; 以及表面电荷控制，用于调节在复查过程期间由于电子辐射引起的电荷累积，其中气体分子在洪水枪光束下而不是在主光束下方注入。改进的SORIL列还包括用于存储晶片设计数据库的存储单元; 以及用于管理缺陷定位，缺陷采样和缺陷分类的主计算机，其中主计算机和存储单元通过高速网络链接。

80. 发明申请

US20110006208A1 Method for Inspecting a Sample 有权
标题翻译：检查样品的方法
公开(公告)号：US20110006208A1
公开(公告)日：2011-01-13
申请号：US12833750
申请日：2010-07-09
申请人： Bert Henning Freitag , Georg Alexander Rosenthal , Daniel Woodrow Phifer, JR.
发明人： Bert Henning Freitag , Georg Alexander Rosenthal , Daniel Woodrow Phifer, JR.
IPC分类号： G01N23/00 , G21K5/08
CPC分类号： G01N23/2251 , G01N2223/611 , H01J37/20 , H01J37/26 , H01J2237/2003 , H01J2237/2008
摘要： The invention describes a method for inspecting samples in an electron microscope. A sample carrier 500 shows electrodes 504, 507 connecting pads 505, 508 with areas A on which the sample is to be placed.After placing the sample on the sample carrier, a conductive pattern is deposited on the sample, so that voltages and currents can be applied to localized parts of the sample.Applying the pattern on the sample may be done with, for example, Beam Induced Deposition or ink-jet printing.The invention also teaches building electronic components, such as resistors, capacitors, inductors and active elements such as FET's in the sample.
摘要翻译：本发明描述了一种在电子显微镜中检查样品的方法。样品载体500显示连接焊盘505,508与待放置样品的区域A的电极504,507。将样品置于样品载体上后，导电图案沉积在样品上，以便可以对样品的局部化部分施加电压和电流。在样品上施加图案可以通过例如光束沉积或喷墨打印进行。本发明还教导在样品中构建电子部件，例如电阻器，电容器，电感器和有源元件，例如FET。

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