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1. 发明申请

US20120214259A1 OXYGEN DIFFUSION EVALUATION METHOD OF OXIDE FILM STACKED BODY 有权
标题翻译：氧化物膜堆积体的氧气扩散评估方法
公开(公告)号：US20120214259A1
公开(公告)日：2012-08-23
申请号：US13213458
申请日：2011-08-19
申请人： Yutaka Okazaki , Keitaro Imai , Atsuo Isobe , Shunpei Yamazaki
发明人： Yutaka Okazaki , Keitaro Imai , Atsuo Isobe , Shunpei Yamazaki
IPC分类号： H01L21/66
CPC分类号： G01N23/2258 , G01N2223/611
摘要： Experience shows that, in a material containing oxygen as a main component, an excess or deficiency of trace amounts of oxygen with respect to a stoichiometric composition, or the like affects properties of the material. An oxygen diffusion evaluation method of an oxide film stacked body includes the steps of: measuring a quantitative value of one of oxygen isotopes of a substrate including a first oxide film and a second oxide film which has an existence proportion of an oxygen isotope different from an existence proportion of an oxygen isotope in the first oxide film in a depth direction, by secondary ion mass spectrometry; and evaluating the one of the oxygen isotopes diffused from the first oxide film to the second oxide film.
摘要翻译：经验表明，在含氧作为主要成分的材料中，相对于化学计量组成等的痕量氧的过量或不足影响材料的性能。氧化膜层叠体的氧扩散评价方法包括以下步骤：测量包含第一氧化物膜和第二氧化物膜的基板的氧同位素的定量值，所述氧化物存在比例与氧同位素通过二次离子质谱法在深度方向上在第一氧化膜中的氧同位素的存在比例; 并评估从第一氧化物膜扩散到第二氧化物膜的氧同位素中的一种。

2. 发明授权

US08450123B2 Oxygen diffusion evaluation method of oxide film stacked body 有权
标题翻译：氧化膜层叠体的氧扩散评价方法
公开(公告)号：US08450123B2
公开(公告)日：2013-05-28
申请号：US13213458
申请日：2011-08-19
申请人： Yutaka Okazaki , Keitaro Imai , Atsuo Isobe , Shunpei Yamazaki
发明人： Yutaka Okazaki , Keitaro Imai , Atsuo Isobe , Shunpei Yamazaki
IPC分类号： H01L21/66
CPC分类号： G01N23/2258 , G01N2223/611
摘要： Experience shows that, in a material containing oxygen as a main component, an excess or deficiency of trace amounts of oxygen with respect to a stoichiometric composition, or the like affects properties of the material. An oxygen diffusion evaluation method of an oxide film stacked body includes the steps of: measuring a quantitative value of one of oxygen isotopes of a substrate including a first oxide film and a second oxide film which has an existence proportion of an oxygen isotope different from an existence proportion of an oxygen isotope in the first oxide film in a depth direction, by secondary ion mass spectrometry; and evaluating the one of the oxygen isotopes diffused from the first oxide film to the second oxide film.
摘要翻译：经验表明，在含氧作为主要成分的材料中，相对于化学计量组成等的痕量氧的过量或不足影响材料的性能。氧化膜层叠体的氧扩散评价方法包括以下步骤：测量包含第一氧化物膜和第二氧化物膜的基板的氧同位素的定量值，所述氧化物存在比例与氧同位素通过二次离子质谱法在深度方向上在第一氧化膜中的氧同位素的存在比例; 并评估从第一氧化物膜扩散到第二氧化物膜的氧同位素中的一种。

3. 发明授权

US08748889B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08748889B2
公开(公告)日：2014-06-10
申请号：US13188992
申请日：2011-07-22
申请人： Toshinari Sasaki , Hitomi Sato , Kosei Noda , Yuta Endo , Mizuho Ikarashi , Keitaro Imai , Atsuo Isobe , Yutaka Okazaki
发明人： Toshinari Sasaki , Hitomi Sato , Kosei Noda , Yuta Endo , Mizuho Ikarashi , Keitaro Imai , Atsuo Isobe , Yutaka Okazaki
IPC分类号： H01L29/12 , H01L21/36
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78603 , H01L29/78606
摘要： It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.
摘要翻译：本发明的目的是制造其中包括氧化物半导体的晶体管具有常态特性，电特性波动小，可靠性高的半导体器件。首先，在基板上进行第一热处理，在基板上形成基极绝缘层，在基底绝缘层上形成氧化物半导体层，对形成氧化物半导体的工序进行第一热处理的工序在不暴露于空气的情况下执行层。接下来，在形成氧化物半导体层之后，进行第二热处理。使用通过加热而释放氧的绝缘层作为基底绝缘层。

4. 发明授权

US08581309B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08581309B2
公开(公告)日：2013-11-12
申请号：US13277489
申请日：2011-10-20
申请人： Shunpei Yamazaki , Atsuo Isobe , Hiromichi Godo , Yutaka Okazaki
发明人： Shunpei Yamazaki , Atsuo Isobe , Hiromichi Godo , Yutaka Okazaki
IPC分类号： H01L27/092
CPC分类号： H01L27/1266 , H01L21/823807 , H01L21/823871 , H01L23/433 , H01L23/481 , H01L23/552 , H01L27/0688 , H01L27/1214 , H01L27/1229 , H01L29/7843 , H01L2224/16 , H01L2224/73253 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12044 , H01L2924/16152 , H01L2924/16195
摘要： An object is to realize high performance and low power consumption in a semiconductor device having an SOI structure. In addition, another object is to provide a semiconductor device having a high performance semiconductor element which is more highly integrated. A semiconductor device is such that a plurality of n-channel field-effect transistors and p-channel field-effect transistors are stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. By controlling a distortion caused to a semiconductor layer due to an insulating film having a stress, a plane orientation of the semiconductor layer, and a crystal axis in a channel length direction, difference in mobility between the n-channel field-effect transistor and the p-channel field-effect transistor can be reduced, whereby current driving capabilities and response speeds of the n-channel field-effect transistor and the p-channel field-effect can be comparable.
摘要翻译：目的是在具有SOI结构的半导体器件中实现高性能和低功耗。此外，另一个目的是提供一种具有更高集成度的高性能半导体元件的半导体器件。半导体器件使得多个n沟道场效应晶体管和p沟道场效应晶体管层叠在其间具有绝缘表面的衬底之间的层间绝缘层。通过控制由于具有应力的绝缘膜，半导体层的平面取向和沟道长度方向的晶轴引起的半导体层的失真，n沟道场效应晶体管和可以减小p沟道场效应晶体管，由此n沟道场效应晶体管的电流驱动能力和响应速度与p沟道场效应相当。

5. 发明授权

US08044464B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08044464B2
公开(公告)日：2011-10-25
申请号：US12209739
申请日：2008-09-12
申请人： Shunpei Yamazaki , Atsuo Isobe , Hiromichi Godo , Yutaka Okazaki
发明人： Shunpei Yamazaki , Atsuo Isobe , Hiromichi Godo , Yutaka Okazaki
IPC分类号： H01L27/01
CPC分类号： H01L27/1266 , H01L21/823807 , H01L21/823871 , H01L23/433 , H01L23/481 , H01L23/552 , H01L27/0688 , H01L27/1214 , H01L27/1229 , H01L29/7843 , H01L2224/16 , H01L2224/73253 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12044 , H01L2924/16152 , H01L2924/16195
摘要： An object is to realize high performance and low power consumption in a semiconductor device having an SOI structure. In addition, another object is to provide a semiconductor device having a high performance semiconductor element which is more highly integrated. A semiconductor device is such that a plurality of n-channel field-effect transistors and p-channel field-effect transistors are stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. By controlling a distortion caused to a semiconductor layer due to an insulating film having a stress, a plane orientation of the semiconductor layer, and a crystal axis in a channel length direction, difference in mobility between the n-channel field-effect transistor and the p-channel field-effect transistor can be reduced, whereby current driving capabilities and response speeds of the n-channel field-effect transistor and the p-channel field-effect can be comparable.
摘要翻译：目的是在具有SOI结构的半导体器件中实现高性能和低功耗。此外，另一个目的是提供一种具有更高集成度的高性能半导体元件的半导体器件。半导体器件使得多个n沟道场效应晶体管和p沟道场效应晶体管层叠在其间具有绝缘表面的衬底之间的层间绝缘层。通过控制由于具有应力的绝缘膜，半导体层的平面取向和沟道长度方向的晶轴引起的半导体层的失真，n沟道场效应晶体管与可以减小p沟道场效应晶体管，由此n沟道场效应晶体管的电流驱动能力和响应速度与p沟道场效应相当。

6. 发明授权

US07982250B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07982250B2
公开(公告)日：2011-07-19
申请号：US12209696
申请日：2008-09-12
申请人： Shunpei Yamazaki , Atsuo Isobe , Hiromichi Godo , Yutaka Okazaki
发明人： Shunpei Yamazaki , Atsuo Isobe , Hiromichi Godo , Yutaka Okazaki
IPC分类号： H01L27/12
CPC分类号： H01L21/8221 , H01L27/0688 , H01L2224/16225 , H01L2224/16227 , H01L2224/32245 , H01L2924/00011 , H01L2924/00014 , H01L2224/29099 , H01L2224/13099 , H01L2224/80001
摘要： A semiconductor device is demonstrated in which a plurality of field-effect transistors is stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. Each of the plurality of filed-effect transistors has a semiconductor layer which is prepared by a process including separation of the semiconductor layer from a semiconductor substrate followed by bonding thereof over the substrate. Each of the plurality of field-effect transistors is covered with an insulating film which provides distortion of the semiconductor layer. Furthermore, the crystal axis of the semiconductor layer, which is parallel to the crystal plane thereof, is set to a channel length direction of the semiconductor layer, which enables production of the semiconductor device with high performance and low power consumption having an SOI structure.
摘要翻译：示出了一种半导体器件，其中在具有绝缘表面的衬底上层叠多个场效应晶体管，层间绝缘层介于其间。多个场效应晶体管中的每一个具有半导体层，该半导体层通过包括将半导体层与半导体衬底分离并随后在衬底上结合的工艺制备。多个场效应晶体管中的每一个被覆盖有提供半导体层失真的绝缘膜。此外，将半导体层的与其晶面平行的晶轴设定为半导体层的沟道长度方向，能够制造具有SOI结构的高性能，低功耗的半导体器件。

7. 发明授权

US09130044B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09130044B2
公开(公告)日：2015-09-08
申请号：US13529125
申请日：2012-06-21
申请人： Yutaka Okazaki , Atsuo Isobe
发明人： Yutaka Okazaki , Atsuo Isobe
IPC分类号： H01L29/12 , H01L29/786
CPC分类号： H01L29/7869
摘要： The invention relates to a semiconductor device including an oxide semiconductor layer, a gate electrode overlapping with a channel formation region of the oxide semiconductor layer, and a source electrode or a drain electrode overlapping with a first region of the oxide semiconductor layer, and a second region between the channel formation region and the first region. An upper layer of the second region includes a microvoid. The microvoid is formed by adding nitrogen to the upper layer of the second region. Thus, upper layer of the second region contains lager amount of nitrogen than a lower layer of the second region.
摘要翻译：本发明涉及包括氧化物半导体层，与氧化物半导体层的沟道形成区重叠的栅电极以及与氧化物半导体层的第一区重叠的源电极或漏电极的半导体器件，以及第二在通道形成区域和第一区域之间。第二区域的上层包括微孔。通过向第二区域的上层添加氮形成微孔。因此，第二区域的上层比第二区域的下层含有大量的氮。

8. 发明授权

US08969182B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08969182B2
公开(公告)日：2015-03-03
申请号：US13453118
申请日：2012-04-23
申请人： Junichi Koezuka , Naoto Yamade , Yuhei Sato , Yutaka Okazaki , Shunpei Yamazaki
发明人： Junichi Koezuka , Naoto Yamade , Yuhei Sato , Yutaka Okazaki , Shunpei Yamazaki
IPC分类号： H01L21/36 , H01L21/00 , H01L29/04 , H01L29/786 , H01L29/66
CPC分类号： H01L27/1274 , H01L21/02565 , H01L21/02609 , H01L21/02667 , H01L21/383 , H01L21/44 , H01L21/477 , H01L27/1225 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.
摘要翻译：使用氧化物半导体的半导体器件具有稳定的电特性以提高可靠性。在包括氧化物半导体膜的晶体管的制造工艺中，形成含有基本上垂直于其顶表面的c轴的晶体（也称为第一晶体氧化物半导体膜）的氧化物半导体膜; 氧化物被添加到氧化物半导体膜中以使至少部分氧化物半导体膜非晶化，从而形成含有过量氧的非晶氧化物半导体膜; 在非晶氧化物半导体膜上形成氧化铝膜; 在其上进行热处理以使非晶氧化物半导体膜的至少一部分结晶，使得含有具有基本上垂直于其顶表面的c轴的晶体的氧化物半导体膜（也称为第二结晶氧化物半导体膜）形成了。

9. 发明授权

US07183987B2 Antenna apparatus, and communications apparatus using same 有权
标题翻译：天线装置和使用该天线装置的通信装置
公开(公告)号：US07183987B2
公开(公告)日：2007-02-27
申请号：US11244727
申请日：2005-10-06
申请人： Hiraku Akiho , Yutaka Okazaki , Kazuo Goto , Akihiro Kikuchi
发明人： Hiraku Akiho , Yutaka Okazaki , Kazuo Goto , Akihiro Kikuchi
IPC分类号： H01Q11/12
CPC分类号： H01Q1/2216 , G06K7/0008 , G06K7/10316 , G06K7/10336 , G06K7/10346 , G06K7/10386 , G06K19/07749 , G06K19/07771 , G06K19/07779 , H01Q1/22 , H01Q1/38 , H01Q7/04 , H01Q7/06
摘要： An antenna apparatus (60) is provided which is used in a recorder and/or player to write and read data to and from a contactless IC card (1). The antenna apparatus (60) includes a loop coil (61) to radiate an electromagnetic field for magnetic coupling with a loop coil (4) at the IC card (1) to send and receive data to and from the IC card (1), and a magnetic sheet (62) disposed to face the main side of the loop coil (61), opposite to the main side facing the IC card (1). The magnetic sheet (62) has the specific permeability μ′ and product Ms·t of saturation magnetization Ms and thickness t thereof set in accordance with a necessary range of communications with the contactless IC card (1).
摘要翻译：提供一种在记录器和/或播放器中用于向非接触式IC卡（1）写入数据和从非接触IC卡（1）读取数据的天线装置（60）。天线装置（60）包括环形线圈（61），用于在IC卡（1）处辐射用于与环形线圈（4）磁耦合的电磁场，以向IC卡（1）发送数据和从IC卡（1）发送和接收数据，以及与所述环形线圈（61）的与所述IC卡（1）相对的主面相对配置的磁性片（62）。磁性片（62）具有根据与非接触式IC卡（1）的通信的必要范围设定的比磁导率μ'和饱和磁化强度Ms的乘积Mst和厚度t。

10. 发明申请

US20060028384A1 Antenna apparatus, and communications apparatus using same 有权
标题翻译：天线装置和使用该天线装置的通信装置
公开(公告)号：US20060028384A1
公开(公告)日：2006-02-09
申请号：US11244727
申请日：2005-10-06
申请人： Hiraku Akiho , Yutaka Okazaki , Kazuo Goto , Akihiro Kikuchi
发明人： Hiraku Akiho , Yutaka Okazaki , Kazuo Goto , Akihiro Kikuchi
IPC分类号： H01Q11/12
CPC分类号： H01Q1/2216 , G06K7/0008 , G06K7/10316 , G06K7/10336 , G06K7/10346 , G06K7/10386 , G06K19/07749 , G06K19/07771 , G06K19/07779 , H01Q1/22 , H01Q1/38 , H01Q7/04 , H01Q7/06
摘要： An antenna apparatus (60) is provided which is used in a recorder and/or player to write and read data to and from a contactless IC card (1). The antenna apparatus (60) includes a loop coil (61) to radiate an electromagnetic field for magnetic coupling with a loop coil (4) at the IC card (1) to send and receive data to and from the IC card (1), and a magnetic sheet (62) disposed to face the main side of the loop coil (61), opposite to the main side facing the IC card (1). The magnetic sheet (62) has the specific permeability μ′ and product Ms·t of saturation magnetization Ms and thickness t thereof set in accordance with a necessary range of communications with the contactless IC card (1).
摘要翻译：提供一种在记录器和/或播放器中用于向非接触式IC卡（1）写入数据和从非接触IC卡（1）读取数据的天线装置（60）。天线装置（60）包括环形线圈（61），用于在IC卡（1）处辐射用于与环形线圈（4）磁耦合的电磁场，以向IC卡（1）发送数据和从IC卡（1）发送和接收数据，以及与所述环形线圈（61）的与所述IC卡（1）相对的主面相对配置的磁性片（62）。磁性片（62）具有根据与非接触式IC卡（1）的通信的必要范围设定的比磁导率μ'和饱和磁化强度Ms的乘积Mst和厚度t。

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