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71. 发明授权

US07314700B2 High sensitivity resist compositions for electron-based lithography 有权
标题翻译：用于电子光刻的高灵敏度抗蚀剂组合物
公开(公告)号：US07314700B2
公开(公告)日：2008-01-01
申请号：US10537259
申请日：2002-12-05
申请人： Wu-Song Huang , Wenjie Li , Wayne Moreau , David R. Medeiros , Karen E. Petrillo , Robert N. Lang , Marie Angelopoulos
发明人： Wu-Song Huang , Wenjie Li , Wayne Moreau , David R. Medeiros , Karen E. Petrillo , Robert N. Lang , Marie Angelopoulos
IPC分类号： G03C1/492 , G03C1/494 , G03C1/76 , G03C5/00
CPC分类号： G03F7/0045 , G03F7/0392
摘要： The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.
摘要翻译：具有酸敏感成像聚合物和辐射敏感性酸产生剂组分的抗蚀剂组合物包含：（i）选自溶解抑制酸产生剂的第一辐射敏感性酸产生剂，和（ii）选择的第二辐射敏感酸产生剂由不受保护的酸性官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂组成的组; 能够形成适用于EPL，EUV，软X射线和其他低能量光刻成像应用的高灵敏度抗蚀剂。抗蚀剂组合物也可用于其它平版印刷工艺。

72. 发明申请

US20070087285A1 Top antireflective coating composition with low refractive index at 193nm radiation wavelength 有权
$Top antireflective coating composition with low refractive index at 193nm radiation wavelength$
标题翻译：顶部抗反射涂层组合物，在193nm辐射波长下具有低折射率
公开(公告)号：US20070087285A1
公开(公告)日：2007-04-19
申请号：US11249693
申请日：2005-10-13
申请人： Wu-Song Huang , William Heath , Kaushal Patel , Pushkara Varanasi
发明人： Wu-Song Huang , William Heath , Kaushal Patel , Pushkara Varanasi
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , Y10S438/952
摘要： Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and a refractive index value n of less than 1.5 with respect to a radiation wavelength of 193 nm have been found which are especially useful as top antireflective coatings in 193 nm dry lithographic processes. Polymers with an ethylenic backbone and having fluorine and sulfonic acid moieties have been found to be especially useful. The compositions enable top reflection control at 193 nm while providing ease of use by virtue of their solubility in aqueous alkaline developer solutions.
摘要翻译：已经发现特征在于具有相对于193nm的辐射波长的具有芳族部分和折射率值n小于1.5的水溶性基团可溶性聚合物的组合物，其特别用作193nm干法光刻中的顶部抗反射涂层过程。已经发现具有乙烯主链并具有氟和磺酸部分的聚合物是特别有用的。该组合物能够在193nm的顶部反射控制，同时通过其在含水碱性显影剂溶液中的溶解度而提供易于使用。

73. 发明授权

US07090963B2 Process for forming features of 50 nm or less half-pitch with chemically amplified resist imaging 失效
标题翻译：用化学放大抗蚀剂成像形成50nm或更小半间距特征的方法
公开(公告)号：US07090963B2
公开(公告)日：2006-08-15
申请号：US10604082
申请日：2003-06-25
申请人： David R. Medeiros , Wu-Song Huang , Gregory M. Wallraff , Bill Hinsberg , Frances Houle
发明人： David R. Medeiros , Wu-Song Huang , Gregory M. Wallraff , Bill Hinsberg , Frances Houle
IPC分类号： G03C5/00
CPC分类号： G03F7/265 , G03F7/38
摘要： Lithographic imaging of 50 nm (or less) half-pitch features in chemically amplified resists (commonly used in the manufacture of integrated circuits) is enabled by the use of reduced temperature post-exposure processing and low activation energy chemically amplified resists. The post-exposure processing preferably involves ambient to moderately elevated temperature and the presence of a deprotection reaction-dependent co-reactant (e.g., water).
摘要翻译：通过使用降低温度的曝光后处理和低活化能的化学放大抗蚀剂，能够实现化学放大抗蚀剂中50nm（或更少）半间距特征的平版印刷成像（通常用于集成电路的制造）。曝光后处理优选包括环境温度至适度升高的温度和脱保护反应依赖性共反应物（例如水）的存在。

74. 发明申请

US20060035167A1 Ultrathin polymeric photoacid generator layer and method of fabricating at least one of a device and a mask by using said layer 失效
公开(公告)号：US20060035167A1
公开(公告)日：2006-02-16
申请号：US10916755
申请日：2004-08-12
申请人： Marie Angelopoulos , Gregory Breyta , Wu-Song Huang , Robert Lang , Wenjie Li , David Medeiros , Wayne Moreau , Karen Petrillo
发明人： Marie Angelopoulos , Gregory Breyta , Wu-Song Huang , Robert Lang , Wenjie Li , David Medeiros , Wayne Moreau , Karen Petrillo
IPC分类号： G03F7/00
CPC分类号： C08F220/14 , C08F220/38 , G03F7/0045 , G03F7/095
摘要： A barrier layer for fabricating at least one of a device and a mask includes a polymeric photoacid generator formed between a substrate and a resist layer. The barrier layer may be used, for example, in forming a resist image, and forming a patterned material feature on a substrate.

75. 发明申请

US20050074689A1 Silicon-containing compositions for spin-on arc/hardmask materials 有权
标题翻译：用于旋转电弧/硬掩模材料的含硅组合物
公开(公告)号：US20050074689A1
公开(公告)日：2005-04-07
申请号：US10679782
申请日：2003-10-06
申请人： Marie Angelopoulos , Wu-Song Huang , Arpan Mahorowila , Wayne Moreau , Dirk Pfeiffer , Ratnam Scooriyakumaren
发明人： Marie Angelopoulos , Wu-Song Huang , Arpan Mahorowila , Wayne Moreau , Dirk Pfeiffer , Ratnam Scooriyakumaren
IPC分类号： G03F7/11 , G03F1/00 , G03F7/00 , G03F7/004 , G03F7/075 , G03F7/09 , G03F7/20 , H01L21/027
CPC分类号： G03F7/0754 , G03F7/0045 , G03F7/091 , Y10S430/106 , Y10S430/115
摘要： Antireflective compositions characterized by the presence of an Si-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.
摘要翻译：特征在于存在具有侧生发色团部分的含Si聚合物的抗反射组合物是光刻工艺中有用的抗反射涂层/硬掩模组合物。这些组合物提供突出的光学，机械和蚀刻选择性，同时适用于使用旋涂应用技术。所述组合物在用于在基材上，尤其是金属或半导体层上配置下层材料层的光刻工艺中特别有用。

76. 发明授权

US5202061A Electrically conductive polymeric materials and uses thereof 失效
标题翻译：导电聚合材料及其用途
公开(公告)号：US5202061A
公开(公告)日：1993-04-13
申请号：US717968
申请日：1991-06-20
申请人： Marie Angelopoulos , Wu-Song Huang , Richard D. Kaplan , Marie-Annick Le Corre , Stanley E. Perreault , Jane M. Shaw , Michel R. Tissier , George F. Walker
发明人： Marie Angelopoulos , Wu-Song Huang , Richard D. Kaplan , Marie-Annick Le Corre , Stanley E. Perreault , Jane M. Shaw , Michel R. Tissier , George F. Walker
IPC分类号： C08G61/12 , H01B1/12 , H01J29/86 , H01L23/498 , H01L23/60 , H05K9/00
CPC分类号： H05K9/0079 , C08G61/12 , H01B1/125 , H01B1/127 , H01B1/128 , H01J29/868 , H01L23/49894 , H01L23/60 , H05K9/0081 , H01L2924/0002
摘要： Structures containing conducting polymers and methods of fabrication thereof. Electrical conductivity can be induced in polymers selected from the group of substituted and unsubstituted polyanilines, polyparaphenylenvinyles, substituted and unsubstituted polythiophenes substituted and unsubstituted poly-p-phenylene sulfides, substituted polyfuranes, substituted polypyrroles, substituted polyselenophene, polyacetylines formed from soluble precursors, combinations thereof and blends thereof with other polymers. The polymer contains a doping precursor, selected from the group of onium salts, iodonium salts, triflate salts, borate salts and tosylate salts and sulfonoxylimides. Conductivity can be selectively induced in the polymer by selectively doping upon selective exposure to a source of energy such as electromagnetic radiation, an electron beam and heat. The electrically conductive polymers of the present invention are useful as electron discharge layers for electron beam applications, such as, SEM observations, as electromagnetic interference coatings on dielectric surfaces and as electron beam resist which acts as a discharge layer.
摘要翻译：含有导电聚合物的结构及其制造方法。可以在选自取代和未取代的聚苯胺，聚对苯二烯基乙烯基，取代和未取代的聚噻吩，取代和未取代的聚对苯硫醚，取代的聚呋喃，取代的聚吡咯，取代的聚硒酚，由可溶性前体形成的聚乙炔，其组合及其与其它聚合物的共混物。聚合物含有选自鎓盐，碘鎓盐，三氟甲磺酸盐，硼酸盐和甲苯磺酸盐和磺酰氧基酰亚胺的掺杂前体。通过在选择性地暴露于诸如电磁辐射，电子束和热能的能量源上选择性掺杂，可以在聚合物中选择性地诱导电导率。本发明的导电聚合物可用作用于电子束应用的电子放电层，例如SEM观察，作为电介质表面上的电磁干扰涂层和用作放电层的电子束抗蚀剂。

77. 发明授权

US09449822B2 Method of forming semiconductor structures with contact holes 有权
标题翻译：形成具有接触孔的半导体结构的方法
公开(公告)号：US09449822B2
公开(公告)日：2016-09-20
申请号：US12846020
申请日：2010-07-29
申请人： Wai-Kin Li , Wu-Song Huang , Joy Cheng , Kuang-Jung Chen
发明人： Wai-Kin Li , Wu-Song Huang , Joy Cheng , Kuang-Jung Chen
IPC分类号： H01L21/033
CPC分类号： H01L21/0337 , H01L21/0338
摘要： Embodiments of the present invention provide a method of forming a semiconductor structure. The method includes forming a set of shapes on top of a substrate; applying a layer of copolymer covering the substrate; causing the copolymer to form a plurality of cylindrical blocks both inside and outside the shapes; forming a pattern of contact holes from the plurality of cylindrical blocks; and transferring the pattern of contact holes to the substrate to form the semiconductor structure. In one embodiment, the shapes are rings and forming the set of shapes includes forming a set of rings that are equally and squarely spaced. In another embodiment, causing the copolymer to form the plurality of cylindrical blocks includes forming only one cylindrical block inside each of the rings and only one cylindrical block outside every four (4) squarely neighboring rings.
摘要翻译：本发明的实施例提供一种形成半导体结构的方法。该方法包括在衬底的顶部上形成一组形状; 涂覆覆盖基材的共聚物层; 使共聚物在形状内部和外部形成多个圆柱形块; 从所述多个圆柱形块形成接触孔的图案; 并将接触孔的图案转移到衬底以形成半导体结构。在一个实施例中，形状是环，并且形成一组形状包括形成均匀且平直间隔的一组环。在另一个实施方案中，使共聚物形成多个圆柱形块包括仅在每个环内形成一个圆柱形块，并且在每四（4）个正方形相邻的环周围仅形成一个圆柱形块。

78. 发明授权

US09316916B2 Method to mitigate resist pattern critical dimension variation in a double-exposure process 有权
标题翻译：减轻双曝光过程中抗蚀剂图案临界尺寸变化的方法
公开(公告)号：US09316916B2
公开(公告)日：2016-04-19
申请号：US12419403
申请日：2009-04-07
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li
IPC分类号： G03F7/207 , G03F7/40 , G03F7/00 , G03F7/20 , G03F7/38
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/2024 , G03F7/203 , G03F7/2041 , G03F7/38
摘要： A method to mitigate resist pattern critical dimension (CD) variation in a double-exposure process generally includes forming a photoresist layer over a substrate; exposing the photoresist layer to a first radiation; developing the photoresist layer to form a first pattern in the photoresist layer; forming a topcoat layer over the photoresist layer; exposing the topcoat layer and the photoresist layer to a second radiation; removing the topcoat layer; and developing the photoresist layer to form a second pattern in the photoresist layer.
摘要翻译：减轻双曝光工艺中抗蚀剂图案临界尺寸（CD）变化的方法通常包括在衬底上形成光致抗蚀剂层; 将光致抗蚀剂层暴露于第一辐射; 显影光致抗蚀剂层以在光致抗蚀剂层中形成第一图案; 在光致抗蚀剂层上形成顶涂层; 将顶涂层和光致抗蚀剂层暴露于第二辐射; 去除顶涂层; 并且在光致抗蚀剂层中显影光致抗蚀剂层以形成第二图案。

79. 发明授权

US08846296B2 Photoresist compositions 有权
标题翻译：光刻胶组合物
公开(公告)号：US08846296B2
公开(公告)日：2014-09-30
申请号：US13461960
申请日：2012-05-02
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/004 , G03F7/028
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A composition is provided. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than the first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. The photosensitive base generator may include benzoin carbamates, O-carbamoylhydroxylamines, O-carbamoyloximes, aromatic sulfonamides, α-lactones, N-(2-Arylethenyl)amides, azides, amides, oximines, quaternary ammonium salts, or amineimides.
摘要翻译：提供了组合物。组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。第二量的酸大于第一量的酸。第二剂量大于第一剂量。所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸，碱的第二量少于第二量的酸。光敏基底产生剂可以包括安息香氨基甲酸酯，O-氨基甲酰羟基胺，O-氨基甲酰肟，芳族磺酰胺，α-内酯，N-（2-亚乙烯基）酰胺，叠氮化物，酰胺，肟，季铵盐或胺酰胺。

80. 发明授权

US08715907B2 Developable bottom antireflective coating compositions for negative resists 有权
标题翻译：用于负性抗蚀剂的可开发的底部抗反射涂料组合物
公开(公告)号：US08715907B2
公开(公告)日：2014-05-06
申请号：US13206796
申请日：2011-08-10
申请人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Sen Liu
发明人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Sen Liu
IPC分类号： G03F7/09 , G03F7/11 , G03F7/30
CPC分类号： G03F7/0382 , C09J133/14 , G03F7/091 , G03F7/094 , G03F7/095
摘要： A negative developable bottom antireflective coating (NDBARC) material includes a polymer containing an aliphatic alcohol moiety, an aromatic moiety, and a carboxylic acid moiety. The NDBARC composition is insoluble in a typical resist solvent such as propylene glycol methyl ether acetate (PGMEA) after coating and baking. The NDBARC material also includes a photoacid generator, and optionally a crosslinking compound. In the NDBARC material, the carboxylic acid provides the developer solubility, while the alcohol alone, the carboxylic acid alone, or their combination provides the PGMEA resistance. The NDBARC material has resistance to the resist solvent, and thus, intermixing does not occur between NDBARC and resist during resist coating over NDBARC. After exposure and bake, the lithographically exposed portions of both the negative photoresist and the NDBARC layer become insoluble in developer due to the chemically amplified crosslinking of the polymers in negative resist and NDBARC layer in the lithographically exposed portions.
摘要翻译：负显影底部抗反射涂层（NDBARC）材料包括含有脂族醇部分，芳族部分和羧酸部分的聚合物。 NDBARC组合物在涂布和烘烤后不溶于典型的抗蚀剂溶剂如丙二醇甲基醚乙酸酯（PGMEA）。 NDBARC材料还包括光致酸发生剂和任选的交联化合物。在NDBARC材料中，羧酸提供了显影剂的溶解度，而单独的醇，单独的羧酸或它们的组合提供了PGMEA的抗性。 NDBARC材料对抗蚀剂溶剂具有抗性，因此在NDBARC的抗蚀涂层期间，NDBARC和抗蚀剂之间不会发生混合。在曝光和烘烤之后，由于在光刻曝光部分中的负光刻胶和NDBARC层中的聚合物的化学扩展交联，负光致抗蚀剂和NDBARC层的光刻曝光部分变得不溶于显影剂。

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