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1. 发明授权

US5198153A Electrically conductive polymeric 失效
标题翻译：电导电聚合物
公开(公告)号：US5198153A
公开(公告)日：1993-03-30
申请号：US357565
申请日：1989-05-26
申请人： Marie Angelopoulos , Wu-Song Huang , Richard D. Kaplan , Marie-Annick Le Corre , Stanley E. Perreault , Jane M. Shaw , Michel R. Tissier , George F. Walker
发明人： Marie Angelopoulos , Wu-Song Huang , Richard D. Kaplan , Marie-Annick Le Corre , Stanley E. Perreault , Jane M. Shaw , Michel R. Tissier , George F. Walker
IPC分类号： G03F7/038 , C08F38/00 , C08G61/00 , C08G61/02 , C08G61/10 , C08G61/12 , C08G73/00 , C08G75/02 , C08G75/06 , C08K3/00 , C08K5/00 , C08L79/00 , C08L81/02 , H01B1/12 , H01J29/86 , H01L21/027 , H01L21/30 , H01L23/498 , H01L23/60 , H05K1/09 , H05K9/00
CPC分类号： H05K9/0079 , C08G61/12 , H01B1/127 , H01B1/128 , H01J29/868 , H01L23/49894 , H01L23/60 , H05K9/0081 , H01L2924/0002 , Y10T428/31855
摘要： Structures containing conducting polymers and methods of fabrication thereof. Electrical conductivity can be induced in polymers selected from the group of substituted and unsubstituted polyanilines, polyparaphenylenvinyles, substituted and unsubstituted polythiophenes substituted and unsubstituted poly-p-phenylene sulfides, substituted polyfuranes, substituted polypyrroles, substituted polyselenophene, polyacetylines formed from soluble precursors, combinations thereof and blends thereof with other polymers. The polymer contains a doping precursor, selected from the group of onium salts, iodonium salts, triflate salts, borate salts and tosylate salts and sulfonoxylimides. Conductivity can be selectively induced in the polymer by selectively doping upon selective exposure to a source of energy such as electromagnetic radiation, an electron beam and heat. The electrically conductive polymers of the present invention are useful as electron discharge layers for electron beam applications, such as, SEM observations, as electromagnetic interference coatings on dielectric surfaces and as electron beam resist which acts as a discharge layer.

2. 发明授权

US5200112A Electrically conductive polymeric materials and uses thereof 失效
标题翻译：导电聚合材料及其用途
公开(公告)号：US5200112A
公开(公告)日：1993-04-06
申请号：US718079
申请日：1991-06-20
申请人： Marie Angelopoulos , Wu-Song Huang , Richard D. Kaplan , Marie-Annick Le Corre , Stanley E. Perreault , Jane M. Shaw , Michel R. Tissier , George F. Walker
发明人： Marie Angelopoulos , Wu-Song Huang , Richard D. Kaplan , Marie-Annick Le Corre , Stanley E. Perreault , Jane M. Shaw , Michel R. Tissier , George F. Walker
IPC分类号： C08G61/12 , H01B1/12 , H01J29/86 , H01L23/498 , H01L23/60 , H05K9/00
CPC分类号： H05K9/0079 , C08G61/12 , H01B1/125 , H01B1/127 , H01B1/128 , H01J29/868 , H01L23/49894 , H01L23/60 , H05K9/0081 , H01L2924/0002
摘要： Structures containing conducting polymers and methods of fabrication thereof. Electrical conductivity can be induced in polymers selected from the group of substituted and unsubstituted polyanilines, polyparaphenylenvinyles, substituted and unsubstituted polythiophenes substituted and unsubstituted poly-p-phenylene sulfides, substituted polyfuranes, substituted polypyrroles, substituted polyselenophene, polyacetylines formed from soluble precursors, combinations thereof and blends thereof with other polymers. The polymer contains a doping precursor, selected from the group of onium salts, iodonium salts, triflate salts, borate salts and tosylate salts and sulfonoxylimides. Conductivity can be selectively induced in the polymer by selectivly doping upon selective exposure to a source of energy such as electromagnetic radiation, an electron beam and heat. The electrically conductive polymers of the present invention are useful as electron discharge layers for electron beam applications, such as, SEM observations, as electromagnetic interference coatings on dielectric surfaces and as electron beam resist which acts as a discharge layer.
摘要翻译：含有导电聚合物的结构及其制造方法。可以在选自取代和未取代的聚苯胺，聚对苯二烯基乙烯基，取代和未取代的聚噻吩，取代和未取代的聚对苯硫醚，取代的聚呋喃，取代的聚吡咯，取代的聚硒酚，由可溶性前体形成的聚乙炔，其组合及其与其它聚合物的共混物。聚合物含有选自鎓盐，碘鎓盐，三氟甲磺酸盐，硼酸盐和甲苯磺酸盐和磺酰氧基酰亚胺的掺杂前体。可以通过在选择性地暴露于诸如电磁辐射，电子束和热的能量源之间选择性地掺杂在聚合物中选择性地诱导电导率。本发明的导电聚合物可用作用于电子束应用的电子放电层，例如SEM观察，作为电介质表面上的电磁干扰涂层和用作放电层的电子束抗蚀剂。

3. 发明授权

US5202061A Electrically conductive polymeric materials and uses thereof 失效
标题翻译：导电聚合材料及其用途
公开(公告)号：US5202061A
公开(公告)日：1993-04-13
申请号：US717968
申请日：1991-06-20
申请人： Marie Angelopoulos , Wu-Song Huang , Richard D. Kaplan , Marie-Annick Le Corre , Stanley E. Perreault , Jane M. Shaw , Michel R. Tissier , George F. Walker
发明人： Marie Angelopoulos , Wu-Song Huang , Richard D. Kaplan , Marie-Annick Le Corre , Stanley E. Perreault , Jane M. Shaw , Michel R. Tissier , George F. Walker
IPC分类号： C08G61/12 , H01B1/12 , H01J29/86 , H01L23/498 , H01L23/60 , H05K9/00
CPC分类号： H05K9/0079 , C08G61/12 , H01B1/125 , H01B1/127 , H01B1/128 , H01J29/868 , H01L23/49894 , H01L23/60 , H05K9/0081 , H01L2924/0002
摘要： Structures containing conducting polymers and methods of fabrication thereof. Electrical conductivity can be induced in polymers selected from the group of substituted and unsubstituted polyanilines, polyparaphenylenvinyles, substituted and unsubstituted polythiophenes substituted and unsubstituted poly-p-phenylene sulfides, substituted polyfuranes, substituted polypyrroles, substituted polyselenophene, polyacetylines formed from soluble precursors, combinations thereof and blends thereof with other polymers. The polymer contains a doping precursor, selected from the group of onium salts, iodonium salts, triflate salts, borate salts and tosylate salts and sulfonoxylimides. Conductivity can be selectively induced in the polymer by selectively doping upon selective exposure to a source of energy such as electromagnetic radiation, an electron beam and heat. The electrically conductive polymers of the present invention are useful as electron discharge layers for electron beam applications, such as, SEM observations, as electromagnetic interference coatings on dielectric surfaces and as electron beam resist which acts as a discharge layer.
摘要翻译：含有导电聚合物的结构及其制造方法。可以在选自取代和未取代的聚苯胺，聚对苯二烯基乙烯基，取代和未取代的聚噻吩，取代和未取代的聚对苯硫醚，取代的聚呋喃，取代的聚吡咯，取代的聚硒酚，由可溶性前体形成的聚乙炔，其组合及其与其它聚合物的共混物。聚合物含有选自鎓盐，碘鎓盐，三氟甲磺酸盐，硼酸盐和甲苯磺酸盐和磺酰氧基酰亚胺的掺杂前体。通过在选择性地暴露于诸如电磁辐射，电子束和热能的能量源上选择性掺杂，可以在聚合物中选择性地诱导电导率。本发明的导电聚合物可用作用于电子束应用的电子放电层，例如SEM观察，作为电介质表面上的电磁干扰涂层和用作放电层的电子束抗蚀剂。

4. 发明申请

US20140214546A1 FOUR DIMENSIONAL (4D) INFORMATION DISTRIBUTION SYSTEM AND METHOD 审中-公开
标题翻译：四维信息分配系统和方法
公开(公告)号：US20140214546A1
公开(公告)日：2014-07-31
申请号：US14056356
申请日：2013-10-17
申请人： Richard D. Kaplan
发明人： Richard D. Kaplan
IPC分类号： G06Q30/02
CPC分类号： G06Q30/0267 , G06Q10/06 , H04L65/4084
摘要： The present invention provides for a four dimensional (4D) information distribution system and method which allows on-demand and real-time transmission of time-sensitive and useful self-help data or instructional materials to user. The transmission of the 4D information can be initiated at the user's request or it can be automatically carried out based on a set of established rules, such as a schedule of events. The 4D information distribution system includes a processing device for generating the 4D information, a distribution device for transmission of the 4D information, a receiving device for accepting the 4D information, and a display device for outputting the received 4D information.
摘要翻译：本发明提供了四维（4D）信息分发系统和方法，其允许对用户进行时间敏感且有用的自助数据或教学材料的按需和实时传输。 4D信息的发送可以根据用户的请求发起，或者可以基于一组已建立的规则来自动执行，例如事件调度。 4D信息分配系统包括用于生成4D信息的处理装置，用于发送4D信息的分发装置，用于接受4D信息的接收装置，以及用于输出接收到的4D信息的显示装置。

5. 发明授权

US07655557B2 CMOS silicide metal gate integration 失效
标题翻译： CMOS硅化物金属栅极集成
公开(公告)号：US07655557B2
公开(公告)日：2010-02-02
申请号：US12145113
申请日：2008-06-24
申请人： Ricky S. Amos , Diane C. Boyd , Cyril Cabral, Jr. , Richard D. Kaplan , Jakub T. Kedzierski , Victor Ku , Woo-Hyeong Lee , Ying Li , Anda C. Mocuta , Vijay Narayanan , An L. Steegen , Maheswaren Surendra
发明人： Ricky S. Amos , Diane C. Boyd , Cyril Cabral, Jr. , Richard D. Kaplan , Jakub T. Kedzierski , Victor Ku , Woo-Hyeong Lee , Ying Li , Anda C. Mocuta , Vijay Narayanan , An L. Steegen , Maheswaren Surendra
IPC分类号： H01L21/4763
CPC分类号： H01L21/76897 , H01L21/28052 , H01L21/28097 , H01L21/823835 , H01L29/66545 , H01L29/6656
摘要： The present invention provides a complementary metal oxide semiconductor integration process whereby a plurality of silicided metal gates are fabricated atop a gate dielectric. Each silicided metal gate that is formed using the integration scheme of the present invention has the same silicide metal phase and substantially the same height, regardless of the dimension of the silicide metal gate. The present invention also provides various methods of forming a CMOS structure having silicided contacts in which the polySi gate heights are substantially the same across the entire surface of a semiconductor structure.
摘要翻译：本发明提供了一种互补金属氧化物半导体集成工艺，其中在栅极电介质顶部制造多个硅化金属栅极。使用本发明的集成方案形成的每个硅化金属栅极与硅化物金属栅极的尺寸无关，具有相同的硅化物金属相和基本上相同的高度。本发明还提供了形成具有硅化物触点的CMOS结构的各种方法，其中多晶硅栅极高度在半导体结构的整个表面上基本相同。

6. 发明申请

US20080254622A1 CMOS SILICIDE METAL GATE INTEGRATION 失效
标题翻译： CMOS硅胶金属门整合
公开(公告)号：US20080254622A1
公开(公告)日：2008-10-16
申请号：US12145113
申请日：2008-06-24
申请人： Ricky S. Amos , Diane C. Boyd , Cyril Cabral , Richard D. Kaplan , Jakub T. Kedzierski , Victor Ku , Woo-Hyeong Lee , Ying Li , Anda C. Mocuta , Vijay Narayanan , An L. Steegen , Maheswaren Surendra
发明人： Ricky S. Amos , Diane C. Boyd , Cyril Cabral , Richard D. Kaplan , Jakub T. Kedzierski , Victor Ku , Woo-Hyeong Lee , Ying Li , Anda C. Mocuta , Vijay Narayanan , An L. Steegen , Maheswaren Surendra
IPC分类号： H01L21/44
CPC分类号： H01L21/76897 , H01L21/28052 , H01L21/28097 , H01L21/823835 , H01L29/66545 , H01L29/6656
摘要： The present invention provides a complementary metal oxide semiconductor integration process whereby a plurality of silicided metal gates are fabricated atop a gate dielectric. Each silicided metal gate that is formed using the integration scheme of the present invention has the same silicide metal phase and substantially the same height, regardless of the dimension of the silicide metal gate. The present invention also provides various methods of forming a CMOS structure having silicided contacts in which the polySi gate heights are substantially the same across the entire surface of a semiconductor structure.
摘要翻译：本发明提供了一种互补金属氧化物半导体集成工艺，其中在栅极电介质顶部制造多个硅化金属栅极。使用本发明的集成方案形成的每个硅化金属栅极与硅化物金属栅极的尺寸无关，具有相同的硅化物金属相和基本上相同的高度。本发明还提供了形成具有硅化物触点的CMOS结构的各种方法，其中多晶硅栅极高度在半导体结构的整个表面上基本相同。

7. 发明申请

US20080028315A1 Universal identification code for four dimensional (4D) information distribution 审中-公开
标题翻译：四维（4D）信息分布的通用识别码
公开(公告)号：US20080028315A1
公开(公告)日：2008-01-31
申请号：US11728689
申请日：2007-03-26
申请人： Richard D. Kaplan
发明人： Richard D. Kaplan
IPC分类号： G06F3/00
CPC分类号： G06F9/453
摘要： The present invention provides for a four dimensional (4D) Help information distribution system and method which allows on-demand, interactive, and real-time transmission of time-sensitive and useful self-help data or instructional materials to a user accessed based on a universal identification code. The transmission of the 4D information can be initiated at the user's request or it can be automatically carried out based on a set of established rules, such as a schedule of events and is referenced by the universal identification code. The 4D information distribution system includes a processing device for generating the 4D information, a distribution device for transmission of the 4D information, a receiving device for accepting the 4D information, and a display device for outputting the received 4D information.
摘要翻译：本发明提供了一种四维（4D）帮助信息分发系统和方法，其允许按时，交互和实时地传送时间敏感且有用的自助数据或教学材料给基于通用识别码。 4D信息的发送可以根据用户的请求发起，或者可以基于一组已建立的规则（例如事件调度）自动执行，并且被通用识别码引用。 4D信息分配系统包括用于生成4D信息的处理装置，用于发送4D信息的分发装置，用于接受4D信息的接收装置，以及用于输出接收到的4D信息的显示装置。

8. 发明授权

US4414314A Resolution in optical lithography 失效
标题翻译：光刻中的分辨率
公开(公告)号：US4414314A
公开(公告)日：1983-11-08
申请号：US352929
申请日：1982-02-26
申请人： Leon H. Kaplan , Richard D. Kaplan , Steven M. Zimmerman
发明人： Leon H. Kaplan , Richard D. Kaplan , Steven M. Zimmerman
IPC分类号： G03F7/26 , G03F7/039 , G03F7/09 , G03F7/105 , G03F7/11 , H01L21/027 , G03C5/00
CPC分类号： G03F7/091
摘要： Improved resolution in optical lithography, as used in the very large scale integration of electronic circuits, is obtained by employing a thin film of 4-phenylazo-1-naphthylamine between silicon substrate and overlying layer of light sensitive photoresist. The 4-phenylazo-1-naphthylamine acts as a stable, highly light absorbent medium exhibiting chemical and physical compatibility with the silicon substrate and photoresists with ether-type solvent systems.
摘要翻译：通过在硅衬底和光敏光刻胶的上层之间使用4-苯基偶氮-1-萘胺的薄膜，可以获得在电子电路的大规模集成中使用的光学光刻中的改进的分辨率。 4-苯基偶氮-1-萘胺作为稳定的高度光吸收介质，其表现出与硅衬底和具有醚型溶剂体系的光致抗蚀剂的化学和物理相容性。

9. 发明申请

US20080027804A1 4Dhelp directed advertising distribution method 审中-公开
标题翻译： 4Dhelp定向广告分发方式
公开(公告)号：US20080027804A1
公开(公告)日：2008-01-31
申请号：US11634487
申请日：2006-12-05
申请人： Richard D. Kaplan
发明人： Richard D. Kaplan
IPC分类号： G06Q30/00
CPC分类号： G06Q30/02 , G06Q30/0258 , G06Q30/0267 , G06Q30/0271
摘要： The present invention provides for a method of transmitting directed advertisement to an end user in a 4DHelp information distribution system. The method employs intelligent information filtering and association such that when the user initiates a request for one set of 4DHelp instructional information, an additional set of 4DHelp promotional information that is related to the information requested is also transmitted along with the 4DHelp instructional information. To provide additional levels of customization, the 4DHelp information can be selected based on the location of the user as well as user's previously registered personal information.
摘要翻译：本发明提供了一种在4DHelp信息分发系统中向终端用户发送定向广告的方法。该方法采用智能信息过滤和关联，使得当用户发起对一组4DHelp指导信息的请求时，与所要求的信息相关的另外一组4DHelp促销信息也与4DHelp指导信息一起传送。为了提供额外的定制级别，可以基于用户的位置以及用户先前注册的个人信息来选择4DHelp信息。

10. 发明授权

US4826564A Method of selective reactive ion etching of substrates 失效
标题翻译：基板的选择性反应离子蚀刻方法
公开(公告)号：US4826564A
公开(公告)日：1989-05-02
申请号：US115140
申请日：1987-10-30
申请人： Brian H. Desilets , Richard D. Kaplan , Harbans S. Sachdev , Krishna G. Sachdev , Susan A. Sanchez
发明人： Brian H. Desilets , Richard D. Kaplan , Harbans S. Sachdev , Krishna G. Sachdev , Susan A. Sanchez
IPC分类号： H01L21/302 , G03F7/09 , H01B13/00 , H01L21/3065 , B05D3/06
CPC分类号： G03F7/094 , Y10S438/95
摘要： A method of image transfer transfer into a substrate by reactive ion etch technique is provided. A mask layer on said substrate is formed by a spin-on film which film is comprised of a mixed organo-functional zircoaluminate or zircotitanate material. The film is dried and cured, and thereafter coated with a radiation sensitive resist. The reist is imagewise exposed and developed, which developing preferably also removes the pattern in the mask exposing the substrate. The substrate is then reactive ion etched, the remaining film acting as a barrier material to the etching.

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