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71. 发明授权

US09466477B2 Method of manufacturing semiconductor device, substrate processing apparatus, and semiconductor device 有权
标题翻译：制造半导体器件，衬底处理设备和半导体器件的方法
公开(公告)号：US09466477B2
公开(公告)日：2016-10-11
申请号：US12849398
申请日：2010-08-03
申请人： Tatsuyuki Saito , Masanori Sakai , Yukinao Kaga , Takashi Yokogawa
发明人： Tatsuyuki Saito , Masanori Sakai , Yukinao Kaga , Takashi Yokogawa
IPC分类号： H01L21/02 , C23C16/34 , C23C16/455 , C23C16/52 , H01L21/285
CPC分类号： H01L21/0228 , C23C16/34 , C23C16/45523 , C23C16/45544 , C23C16/45563 , C23C16/52 , H01L21/02104 , H01L21/02172 , H01L21/02225 , H01L21/02263 , H01L21/02271 , H01L21/28506
摘要： There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.
摘要翻译：提供了制造半导体器件，衬底处理设备和半导体器件的方法。该方法允许快速形成导电膜，其由于其致密的结构而具有从源极渗透的低浓度的杂质和低电阻率。该方法通过同时将两种或更多种源提供到处理室中以在放置在处理室中的基板上形成膜来执行。该方法包括：以第一供应流量将至少一种源提供到处理室中来执行第一源供应过程; 以及通过以与第一供给流量不同的第二供给流量将至少一种源提供到处理室来执行第二源供给处理。

72. 发明授权

US09160002B2 Lead-acid battery 有权
标题翻译：铅酸蓄电池
公开(公告)号：US09160002B2
公开(公告)日：2015-10-13
申请号：US13818761
申请日：2011-01-17
申请人： Toshio Shibahara , Satoru Takahashi , Yuuji Araki , Masanori Sakai , Satoshi Minoura
发明人： Toshio Shibahara , Satoru Takahashi , Yuuji Araki , Masanori Sakai , Satoshi Minoura
IPC分类号： H01M4/583 , H01M4/14 , H01M4/62 , H01M10/12 , H01M10/44 , H01M10/42 , H01M4/02
CPC分类号： H01M4/583 , H01M4/14 , H01M4/62 , H01M4/625 , H01M4/628 , H01M10/121 , H01M10/4235 , H01M10/44 , H01M2004/021 , H01M2004/027 , Y02E60/126 , Y02T10/7016
摘要： In a valve-regulated lead-acid battery in which charging is performed intermittently on every short time and high rate discharging to a load is performed in a partial state of charge (PSOC), a valve-regulated lead-acid battery improved for the charge acceptance and the life characteristic under PSOC than usual is provided. A positive electrode plate having a specific surface area of an active material of 5.5 m2/g or more is used. A valve-regulated lead-acid battery is manufactured by using a negative electrode plate improved for the charge acceptance and the life performance by adding a carbonaceous electroconductive material and a formaldehyde condensate of bisphenols aminobenzene sulfonic acid to a negative electrode active material and setting the specific gravity of an electrolyte to 1.30 or more and 1.35 or less.
摘要翻译：在部分充电状态（PSOC）中，在每隔短时间间歇地进行充电进行负荷的高速率放电的阀控式铅酸电池中，对于充电状态进行了改善的阀控式铅酸蓄电池提供PSOC以下的接受和生活特征。使用活性物质的比表面积为5.5m 2 / g以上的正极板。通过使用通过将碳导电材料和双酚氨基苯磺酸的甲醛缩合物加入到负极活性材料中，通过使用改进的充电接受性和寿命性能的负极板来制造阀控铅酸蓄电池，电解液的重力为1.30以上且1.35以下。

73. 发明授权

US08481434B2 Method of manufacturing a semiconductor device and processing apparatus 有权
公开(公告)号：US08481434B2
公开(公告)日：2013-07-09
申请号：US12216596
申请日：2008-07-08
申请人： Hironobu Miya , Eisuke Nishitani , Yuji Takebayashi , Masanori Sakai , Hirohisa Yamazaki , Toshinori Shibata , Minoru Inoue
发明人： Hironobu Miya , Eisuke Nishitani , Yuji Takebayashi , Masanori Sakai , Hirohisa Yamazaki , Toshinori Shibata , Minoru Inoue
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/4405 , H01L21/3141 , H01L21/31645
摘要： To remove the deposit including a high dielectric constant film deposited on an inside of a processing chamber, by using a cleaning gas activated only by heat. The method includes the steps of: loading a substrate or a plurality of substrates into the processing chamber; performing processing to deposit the high dielectric constant film on the substrate by supplying processing gas into the processing chamber; unloading the processed substrate from the inside of the processing chamber; and cleaning the inside of the processing chamber by supplying a halide gas and an oxygen based gas into the processing chamber, and removing the deposit including the high dielectric constant film deposited on the inside of the processing chamber, and in the step of cleaning the inside of the processing chamber, the concentration of the oxygen based gas in the halide gas and the oxygen based gas is set to be less than 7%.

74. 发明申请

US20130157118A1 LEAD-ACID BATTERY 有权
标题翻译：铅酸蓄电池
公开(公告)号：US20130157118A1
公开(公告)日：2013-06-20
申请号：US13818761
申请日：2011-01-17
申请人： Toshio Shibahara , Satoru Takahashi , Yuuji Araki , Masanori Sakai , Satoshi Minoura
发明人： Toshio Shibahara , Satoru Takahashi , Yuuji Araki , Masanori Sakai , Satoshi Minoura
IPC分类号： H01M4/583
CPC分类号： H01M4/583 , H01M4/14 , H01M4/62 , H01M4/625 , H01M4/628 , H01M10/121 , H01M10/4235 , H01M10/44 , H01M2004/021 , H01M2004/027 , Y02E60/126 , Y02T10/7016
摘要： In a valve-regulated lead-acid battery in which charging is performed intermittently on every short time and high rate discharging to a load is performed in a partial state of charge (PSOC), a valve-regulated lead-acid battery improved for the charge acceptance and the life characteristic under PSOC than usual is provided. A positive electrode plate having a specific surface area of an active material of 5.5 m2/g or more is used. A valve-regulated lead-acid battery is manufactured by using a negative electrode plate improved for the charge acceptance and the life performance by adding a carbonaceous electroconductive material and a formaldehyde condensate of bisphenols aminobenzene sulfonic acid to a negative electrode active material and setting the specific gravity of an electrolyte to 1.30 or more and 1.35 or less.
摘要翻译：在部分充电状态（PSOC）中，在每隔短时间间歇地进行充电进行负荷的高速率放电的阀控式铅酸电池中，对于充电状态进行了改善的阀控式铅酸蓄电池提供PSOC以下的接受和生活特征。使用活性物质的比表面积为5.5m 2 / g以上的正极板。通过使用通过将碳导电材料和双酚氨基苯磺酸的甲醛缩合物加入到负极活性材料中，通过使用改进的充电接受性和寿命性能的负极板来制造阀控铅酸蓄电池，电解液的重力为1.30以上且1.35以下。

75. 发明授权

US08427144B2 Magnetic sensor that includes magenetoresistive films and conductors that combine the magnetoresistive films 有权
标题翻译：磁传感器，包括磁阻膜和导体，结合磁阻膜
公开(公告)号：US08427144B2
公开(公告)日：2013-04-23
申请号：US12844090
申请日：2010-07-27
申请人： Naoki Ohta , Masanori Sakai , Hiraku Hirabayashi
发明人： Naoki Ohta , Masanori Sakai , Hiraku Hirabayashi
IPC分类号： G01R33/09
CPC分类号： G01R33/091 , G01R33/098 , H01L43/08
摘要： A magnetoresistive element includes magnetoresistive films each having an upper surface and a lower surface, and conductors combining the magnetoresistive films in series and including top electrodes and bottom electrodes. Each one of the top electrodes and corresponding one of the bottom electrodes oppose each other to sandwich corresponding one of the magnetoresistive films. Each electrode of the top electrodes and the bottom electrodes includes a stem section and a branch section, the stem section extending in a direction along a series alignment direction of the magnetoresistive films, and the branch section extending along the lamination plane in a direction intersecting a direction in which the stem section extends. The branch section in the top electrode is in contact with an upper surface of the corresponding magnetoresistive film, and the branch section in the bottom electrode is in contact with a lower surface of the corresponding magnetoresistive film.
摘要翻译：磁阻元件包括各自具有上表面和下表面的磁阻膜，以及将磁阻膜串联并包括顶电极和底电极的导体。顶部电极和对应的一个底部电极中的每一个彼此相对以夹持相应的一个磁阻膜。顶部电极和底部电极的每个电极包括杆部分和分支部分，杆部分在沿着磁阻膜的串联取向方向的方向上延伸，并且分支部分沿着层叠平面沿与杆段延伸的方向。顶部电极中的分支部分与相应的磁阻膜的上表面接触，并且底部电极中的分支部分与相应的磁阻膜的下表面接触。

76. 发明申请

US20120079985A1 METHOD FOR PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：用于处理基板和基板处理装置的方法
公开(公告)号：US20120079985A1
公开(公告)日：2012-04-05
申请号：US13313736
申请日：2011-12-07
申请人： Hirohisa YAMAZAKI , Yuji Takebayashi , Masanori Sakai , Tsutomu Kato
发明人： Hirohisa YAMAZAKI , Yuji Takebayashi , Masanori Sakai , Tsutomu Kato
IPC分类号： C23C16/455
CPC分类号： H01L21/0228 , C23C16/405 , C23C16/4412 , C23C16/45527 , C23C16/45557 , H01L21/02112 , H01L21/02205
摘要： There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.
摘要翻译：提供了一种基板处理方法，包括以下步骤：将源气体供应到容纳基板的处理室中; 去除源气体和源气体的中间体残留在处理室中; 在基本上停止排出处理室中的气氛的状态下将臭氧供给到处理室中; 并且除去臭氧和中间体的臭氧残留在处理室中; 这些步骤重复多次，由此通过交替地供给源气体和臭氧而不使其彼此混合而在基板的表面上形成氧化膜。

77. 发明授权

US08047158B2 Substrate processing apparatus and reaction container 有权
公开(公告)号：US08047158B2
公开(公告)日：2011-11-01
申请号：US11933169
申请日：2007-10-31
申请人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
发明人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
IPC分类号： C23C16/509 , C23C16/505 , C23C16/503 , C23C16/50 , C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/45542 , C23C16/45578 , C23C16/4583 , H01J37/3244
摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

78. 发明授权

US07900580B2 Substrate processing apparatus and reaction container 有权
标题翻译：基材加工设备和反应容器
公开(公告)号：US07900580B2
公开(公告)日：2011-03-08
申请号：US11933208
申请日：2007-10-31
申请人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
发明人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
IPC分类号： C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/45542 , C23C16/45578 , C23C16/4583 , H01J37/3244
摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.
摘要翻译：基板处理装置包括容纳层叠基板的反应室，气体导入部和缓冲室，其中，沿着基板的堆叠方向设置气体导入部，并将基板处理气体导入缓冲室，缓冲室包括沿着基板的层叠方向设置的多个气体供给开口，从气体导入部导入的处理气体从气体供给口供给到反应室。

79. 发明申请

US20100297846A1 Method of manufacturing a semiconductor device and substrate processing apparatus 审中-公开
标题翻译：半导体器件和衬底处理设备的制造方法
公开(公告)号：US20100297846A1
公开(公告)日：2010-11-25
申请号：US12801082
申请日：2010-05-20
申请人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai
发明人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai
IPC分类号： H01L21/285 , C23C16/06 , C23C16/34
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45527 , C23C16/45544 , H01L21/76841
摘要： A method of manufacturing a semiconductor device includes the steps of: forming a first metal film on the substrate placed in a processing chamber by alternately supplying at least one type of a metal compound that is an inorganic raw material and a reactant gas that has reactivity to the metal compound to the processing chamber more than once; forming a second metal film on the substrate by simultaneously supplying at least one type of a metal compound that is an inorganic raw material and a reactant gas that has reactivity to the metal compound to the processing chamber once so that the metal compound and the reactant gas are mixed with each other; and modifying at least one of the first metal film and the second metal film is modified using at least one of the reactant gas and an inert gas after at least one of the alternate supply process and the simultaneous supply process. It thus becomes possible to provide a dense, low-resistive metal film having a smooth film surface with a better quality in comparison with a titanium nitride film formed by the CVD method at a higher deposition rate, that is, at a higher productivity, in comparison with a titanium nitride film formed by the ALD method at a low temperature.
摘要翻译：一种制造半导体器件的方法包括以下步骤：通过交替地供给至少一种作为无机原料的金属化合物和具有反应性的反应物气体，在放置在处理室中的基板上形成第一金属膜金属化合物对处理室不止一次; 通过同时将至少一种作为无机原料的金属化合物和与金属化合物具有反应性的反应物气体同时供给到处理室，从而在基板上形成第二金属膜，使得金属化合物和反应气体相互混合; 并且在交替供给处理和同时供给处理中的至少一个之后，使用至少一种反应气体和惰性气体来修饰第一金属膜和第二金属膜中的至少一个。因此，与通过CVD法形成的氮化钛膜以更高的生产率，即更高的生产率相比，可以提供具有光滑膜表面的致密的低电阻金属膜，具有更好的质量与在低温下通过ALD法形成的氮化钛膜进行比较。

80. 发明申请

US20100186774A1 CLEANING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：清洁方法和基板处理装置
公开(公告)号：US20100186774A1
公开(公告)日：2010-07-29
申请号：US12671189
申请日：2008-09-09
申请人： Hironobu Miya , Yuji Takebayashi , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki , Atsuhiko Suda , Takashi Tanioka
发明人： Hironobu Miya , Yuji Takebayashi , Masanori Sakai , Shinya Sasaki , Hirohisa Yamazaki , Atsuhiko Suda , Takashi Tanioka
IPC分类号： B08B9/00 , H01L21/469
CPC分类号： C23C16/4405 , B08B7/0035 , H01L21/67109 , H01L21/67757 , H01L21/67769
摘要： Provided is a cleaning method for removing a film adhered inside a processing chamber of a substrate processing apparatus used for forming a desired film on a substrate by supplying a material gas for film formation. The method is provided with a step of supplying a halogen containing gas into the processing chamber, and a step of supplying a fluorine containing gas into the processing chamber while supplying the halogen containing gas, after starting to supply the halogen containing gas. In the step of supplying the fluorine containing gas, a supply flow volume ratio of the halogen containing gas to the entire gas supplied into the processing chamber is within a range of 20-25%.
摘要翻译：提供了一种清洁方法，用于通过提供用于成膜的材料气体来除去附着在用于在基板上形成期望的膜的基板处理装置的处理室内的膜。该方法具有向处理室供给含卤素气体的步骤，以及在开始供应含卤素气体之后，在供应含卤素气体的同时向处理室供应含氟气体的步骤。在供给含氟气体的步骤中，含卤素气体与供给到处理室的全部气体的供给流量比在20〜25％的范围内。

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