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71. 发明授权

US08290009B2 Vertical cavity surface emitting laser 有权
标题翻译：垂直腔表面发射激光
公开(公告)号：US08290009B2
公开(公告)日：2012-10-16
申请号：US12458962
申请日：2009-07-28
申请人： Yuji Masui , Takahiro Arakida , Rintaro Koda , Osamu Maeda , Tomoyuki Oki , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Rintaro Koda , Osamu Maeda , Tomoyuki Oki , Naoki Jogan
IPC分类号： H01S5/00
CPC分类号： H01S5/18336 , H01S5/0655 , H01S5/18311 , H01S5/18316 , H01S5/18358 , H01S2301/166
摘要： A vertical cavity surface emitting laser includes a layer-stack structure including, on a substrate, a transverse-mode adjustment layer, a first multilayer reflecting mirror, an active layer having a light emission region, and a second multilayer reflecting mirror in order from the substrate side, and including a current confinement layer in which a current injection region is formed in a region corresponding to the light emission region in the first multilayer reflecting mirror, between the first multilayer reflecting mirror and the active layer, between the active layer and the second multilayer reflecting mirror, or in the second multilayer reflecting mirror. In the transverse-mode adjustment layer, reflectance at an oscillation wavelength in the region opposite to a center of the light emission region is higher than that at an oscillation wavelength in the region opposite to an outer edge of the light emission region.
摘要翻译：垂直腔表面发射激光器包括层叠结构，其包括在基板上的横向模式调整层，第一多层反射镜，具有发光区域的有源层和第二多层反射镜，从并且包括电流限制层，其中在与第一多层反射镜中的发光区域对应的区域中在第一多层反射镜和有源层之间形成电流注入区域，在有源层和第二多层反射镜，或第二多层反射镜。在横模调整层中，与发光区域的中心相反的区域的振荡波长的反射率高于与发光区域的外缘相反的区域的振荡波长的反射率。

72. 发明授权

US08218594B2 Vertical cavity surface emitting laser 有权
标题翻译：垂直腔表面发射激光
公开(公告)号：US08218594B2
公开(公告)日：2012-07-10
申请号：US12458754
申请日：2009-07-22
申请人： Osamu Maeda , Yuji Masui , Masaki Shiozaki , Takahiro Arakida , Takayuki Kawasumi
发明人： Osamu Maeda , Yuji Masui , Masaki Shiozaki , Takahiro Arakida , Takayuki Kawasumi
IPC分类号： H01S5/00
CPC分类号： H01S5/18327 , H01S5/02461 , H01S5/1221 , H01S5/18311 , H01S5/18358 , H01S5/18391 , H01S2301/166 , H01S2304/02 , H01S2304/04
摘要： The present invention provides a Vertical Cavity Surface Emitting Laser including: a first multilayer film reflector; an active layer having a light emission region; a second multilayer film reflector; and a reflectance adjustment layer in this order on a substrate side. The first multilayer film reflector and the second multilayer film reflector have a laminated structure in which reflectance of oscillation wavelength λx is almost constant without depending on temperature change. The active layer is made of a material with which a maximum gain is obtained at temperature higher than ambient temperature. The reflectance adjustment layer has a laminated structure in which difference ΔR(=Rx−Ry) between reflectance Rx of a region opposed to a central region of the light emission region and reflectance Ry of a region opposed to an outer edge region of the light emission region is increased associated with temperature increase from ambient temperature to high temperature.
摘要翻译：本发明提供一种垂直腔表面发射激光器，包括：第一多层膜反射器; 具有发光区域的有源层; 第二多层膜反射器; 和反射率调整层。第一多层膜反射器和第二多层膜反射器具有振荡波长λx的反射率几乎恒定而不依赖于温度变化的层叠结构。有源层由在高于环境温度的温度下获得最大增益的材料制成。反射率调整层具有层叠结构，其中与发光区域的中心区域相对的区域的反射率Rx与与发光区域的外边缘区域相对的区域的反射率Ry之间的差Dgr R（= Rx-Ry）发光区域随温度从环境温度升高到高温而增加。

73. 发明授权

US08077752B2 Vertical cavity surface emitting laser 有权
标题翻译：垂直腔表面发射激光
公开(公告)号：US08077752B2
公开(公告)日：2011-12-13
申请号：US12318421
申请日：2008-12-29
申请人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
发明人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
IPC分类号： H01S5/00
CPC分类号： H01S5/18394 , H01S5/0425 , H01S5/18311 , H01S5/18327 , H01S5/18347 , H01S5/18358 , H01S2301/166 , H01S2301/176
摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.
摘要翻译：提供了能够提供高输出基本横模的垂直腔面发射激光器（VCSEL），同时防止高阶横模的振荡。 VCSEL包括形成在半导体层上的包括有源层和电流限制层的半导体层和横向模式调整部。电流限制层具有电流注入区域和电流限制区域。横模调整部具有高反射面积和低反射面积。高反射率区域形成在包括与电流注入区域的中心点相对的第一相对区域的区域中。高反射率区域的中心点布置在与第一相对区域不同的区域中。在与电流注入区域相对的相对区域中，在没有形成高反射率区域的区域中形成低反射率区域。

74. 发明申请

US20110243174A1 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US20110243174A1
公开(公告)日：2011-10-06
申请号：US13064424
申请日：2011-03-24
申请人： Osamu Maeda , Masaki Shiozaki , Susumu Sato , Takahiro Arakida , Shiro Uchida
发明人： Osamu Maeda , Masaki Shiozaki , Susumu Sato , Takahiro Arakida , Shiro Uchida
IPC分类号： H01S5/32
CPC分类号： H01S5/18311 , H01S5/02276 , H01S5/0261 , H01S5/18391 , H01S5/423 , H01S2301/18
摘要： There is provided a semiconductor light-emitting device including a temperature detecting section which is allowed to accurately estimate an element temperature. The semiconductor light-emitting device includes: one or a plurality of surface-emitting semiconductor light-emitting sections and one or a plurality of semiconductor temperature detecting sections on a semiconductor substrate, the surface-emitting semiconductor light-emitting sections emitting light in a direction normal to the semiconductor substrate, the semiconductor temperature detecting sections not emitting light to outside. The semiconductor light-emitting sections and the semiconductor temperature detecting sections have a PN junction or a PIN junction in a direction normal to the semiconductor substrate.
摘要翻译：提供了一种半导体发光装置，其包括允许精确估计元件温度的温度检测部。半导体发光器件包括：半导体衬底上的一个或多个表面发射半导体发光部分和一个或多个半导体温度检测部分，表面发射半导体发光部分沿方向发光垂直于半导体衬底的半导体温度检测部分不向外部发光。半导体发光部和半导体温度检测部在与半导体基板垂直的方向上具有PN结或PIN结。

75. 发明授权

US08006671B2 Start control apparatus for an internal combustion engine 有权
标题翻译：内燃机起动控制装置
公开(公告)号：US08006671B2
公开(公告)日：2011-08-30
申请号：US12354936
申请日：2009-01-16
申请人： Osamu Maeda , Hideki Takubo
发明人： Osamu Maeda , Hideki Takubo
IPC分类号： F02D41/06 , F02M51/00 , F02M31/00
CPC分类号： F02D41/064 , F02D19/0605 , F02D19/084 , F02D19/087 , F02D19/088 , F02D41/0025 , F02D41/345 , F02D2200/0606 , F02D2200/0611 , F02M31/16 , F02M53/02 , Y02T10/126 , Y02T10/36 , Y02T10/44
摘要： A start control apparatus for an internal combustion engine, which takes an amount of a fuel vaporized from a heated fuel into consideration to prevent deterioration of startability due to an overrich or overlean condition caused by an excessive or insufficient amount of the vaporized fuel and to realize improvement of cold startability. The start control apparatus includes: a heater (14) for heating a fuel to be supplied to the internal combustion engine; fuel heating control unit (22) for energizing the heater when a cooling water temperature is less than an internal combustion engine start possible water temperature value to heat the fuel; and start time fuel setting unit (26) for setting a start time fuel injection amount of the internal combustion engine according to a fuel temperature after the fuel is heated by the fuel heating control unit (22), an alcohol concentration, and the cooling water temperature.
摘要翻译：一种用于内燃机的启动控制装置，其考虑从加热燃料蒸发的燃料量，以防止由于过量或过量的蒸发燃料引起的过度或过量状况引起的启动性的劣化，并实现提高冷启动性。启动控制装置包括：加热器（14），用于加热要供给到内燃机的燃料; 燃料加热控制单元（22），用于当冷却水温度低于内燃机时启动加热器启动可能的水温值以加热燃料; 以及起动时间燃料设定单元（26），用于根据由燃料加热控制单元（22）加热燃料后的燃料温度，酒精浓度和冷却水设定内燃机的开始时间燃料喷射量温度。

76. 发明授权

US07920615B2 Surface-emitting laser diode and method of manufacturing the same 有权
标题翻译：表面发射激光二极管及其制造方法
公开(公告)号：US07920615B2
公开(公告)日：2011-04-05
申请号：US12227443
申请日：2007-06-04
申请人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi
发明人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi
IPC分类号： H01S5/00
CPC分类号： H01S5/18355 , H01S5/0425 , H01S5/18311 , H01S5/18313 , H01S5/1833 , H01S5/18372 , H01S5/3201 , H01S5/423
摘要： A surface-emitting laser diode capable of being manufactured easily at low cost, and capable of stabilizing the polarization direction of laser light in one direction and achieving higher output is provided. A light emission section 20 in which a lower first DBR mirror layer 12, a lower second DBR mirror layer 13, a lower spacer layer 14, an active layer 15 including a light emission region 15A, an upper spacer layer 16, a current confinement layer 17, an upper DBR mirror layer 18 and a contact layer 19 are laminated in this order is included on a substrate 10. The lower first DBR mirror layer 12 includes an oxidation section 30 nonuniformly distributed in a direction rotating around the light emission region 15A in a periphery of a region corresponding to the light emission region 15A. The oxidation section 30 includes a pair of multilayer films 31 and 32, and is formed by oxidizing a low refractive index layer 12A. Thereby, an anisotropic stress according to nonuniform distributions of the multilayer films 31 and 32 is generated in the active layer 15.
摘要翻译：提供了能够以低成本容易地制造并能够稳定激光在一个方向上的偏振方向并实现更高输出的表面发射激光二极管。发光部20，其中下部第一DBR镜面层12，下部第二DBR镜面层13，下部间隔层14，包括发光区域15A的有源层15，上部间隔层16，电流限制层如图17所示，上部DBR镜层18和接触层19依次层叠在基板10上。下部第一DBR镜面层12包括氧化部30，该氧化部30沿着围绕发光区域15A旋转的方向不均匀地分布与发光区域15A对应的区域的周边。氧化部分30包括一对多层膜31和32，并且通过氧化低折射率层12A而形成。由此，在有源层15中产生根据多层膜31,32的不均匀分布的各向异性的应力。

77. 发明授权

US07917052B2 Charging device and an image forming apparatus provided with the charging device 有权
标题翻译：充电装置和具有充电装置的图像形成装置
公开(公告)号：US07917052B2
公开(公告)日：2011-03-29
申请号：US12827313
申请日：2010-06-30
申请人： Shunichi Takaya , Osamu Maeda
发明人： Shunichi Takaya , Osamu Maeda
IPC分类号： G03G15/02
CPC分类号： G03G15/0258 , G03G2215/028
摘要： A charging device has a stainless steel sheet electrode for charging an image bearing member, and a cleaner for cleaning the stainless steel sheet electrode. The stainless steel sheet electrode has a thickness within a range from 50 μm to 60 μm and comprises aligned triangular pins. Each of the triangular pins has a vertex angle within a range from 10 degrees to 30 degrees. The cleaner has two grinding members comprising abrasive grains having an average diameter within a range from 2 μm to 9 μm, and the two grinding members are in contact with, respectively, both main surfaces of the sheet electrode. The cleaner and the sheet electrode are moved relative to each other at a constant speed by a force equal to or less than 2N.
摘要翻译：充电装置具有用于对图像承载部件充电的不锈钢片状电极和用于清洁不锈钢片状电极的清洁器。不锈钢板电极的厚度在50μm至60μm的范围内，并且包括对准的三角形销。每个三角形销具有在10度至30度的范围内的顶角。清洁器具有包括平均直径在2μm至9μm范围内的磨粒的两个磨削构件，并且两个研磨构件分别与片状电极的两个主表面接触。清洁器和片状电极通过等于或小于2N的力以恒定的速度相对于彼此移动。

78. 发明授权

US07884386B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US07884386B2
公开(公告)日：2011-02-08
申请号：US12657809
申请日：2010-01-28
申请人： Yuji Masui , Rintaro Koda , Osamu Maeda , Takahiro Arakida , Terukazu Naruse , Naoki Jogan
发明人： Yuji Masui , Rintaro Koda , Osamu Maeda , Takahiro Arakida , Terukazu Naruse , Naoki Jogan
IPC分类号： H01L33/00
CPC分类号： H01S5/0264
摘要： A semiconductor light-emitting device includes a semiconductor light-emitting element including a first multilayer reflector, an active layer having a light-emitting region, and a second multilayer reflector in the stated order; a semiconductor light-detecting element disposed opposite the first multilayer reflector in relation to the semiconductor light-emitting element and including a light-absorbing layer configured to absorb light emitted from the light-emitting region; a transparent substrate disposed between the semiconductor light-emitting element and the semiconductor light-detecting element; a first metal layer having a first opening in a region including a region opposite the light-emitting region and bonding the semiconductor light-emitting element and the substrate; and a second metal layer having a second opening in a region including a region opposite the light-emitting region and bonding the semiconductor light-detecting element and the substrate.
摘要翻译：半导体发光器件包括具有第一多层反射器，具有发光区域的有源层和按照所述顺序的第二多层反射器的半导体发光元件; 相对于所述半导体发光元件与所述第一多层反射体相对设置并且包括被配置为吸收从所述发光区域发射的光的光吸收层的半导体光检测元件; 设置在所述半导体发光元件和所述半导体光检测元件之间的透明基板; 第一金属层，其在包括与所述发光区域相对的区域的区域中具有第一开口，并且接合所述半导体发光元件和所述基板; 以及第二金属层，其在包括与发光区域相对的区域的区域中具有第二开口，并且接合半导体光检测元件和基板。

79. 发明申请

US20110007769A1 LASER DIODE 审中-公开
标题翻译：激光二极管
公开(公告)号：US20110007769A1
公开(公告)日：2011-01-13
申请号：US12824377
申请日：2010-06-28
申请人： Yuji Masui , Osamu Maeda , Rintaro Koda , Takahiro Arakida , Naoki Jogan , Kouichi Kondo
发明人： Yuji Masui , Osamu Maeda , Rintaro Koda , Takahiro Arakida , Naoki Jogan , Kouichi Kondo
IPC分类号： H01S5/10 , H01S5/00
CPC分类号： H01S5/18316 , H01S5/18311 , H01S5/18333 , H01S5/18358 , H01S5/2022 , H01S2301/166
摘要： A laser diode includes: a first multilayer film reflecting mirror, an active layer, and a second multilayer film reflecting mirror in this order; and a first oxide narrowing layer and a second oxide narrowing layer. The first oxide narrowing layer is formed close to the active layer, in comparison with the second oxide narrowing layer, includes a first unoxidized region in a middle region in a plane, and includes a first oxidized region on a periphery of the first unoxidized region. The second oxide narrowing layer includes, in a region facing the first unoxidized region, a second unoxidized region having a diameter smaller than that of the first unoxidized region, includes a third unoxidized region in a region not facing the first unoxidized region, and includes a second oxidized region on a periphery of the second unoxidized region and the third unoxidized region.
摘要翻译：激光二极管包括：第一多层膜反射镜，有源层和第二多层膜反射镜; 以及第一氧化物变窄层和第二氧化物变窄层。与第二氧化物变窄层相比，第一氧化物变窄层靠近有源层形成，在平面中的中间区域包括第一未氧化区域，并且在第一未氧化区域的周围包括第一氧化区域。所述第二氧化物变窄层在面向所述第一未氧化区域的区域中包括直径小于所述第一未氧化区域的直径的第二未氧化区域，在不面向所述第一未氧化区域的区域中包含第三未氧化区域，第二未氧化区域的周边上的第二氧化区域和第三未氧化区域。

80. 发明申请

US20100226402A1 Laser diode and method of manufacturing the same 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US20100226402A1
公开(公告)日：2010-09-09
申请号：US12656427
申请日：2010-01-29
申请人： Osamu Maeda , Yuji Masui , Masaki Shiozaki , Susumu Sato , Takahiro Arakida
发明人： Osamu Maeda , Yuji Masui , Masaki Shiozaki , Susumu Sato , Takahiro Arakida
IPC分类号： H01S5/323 , H01L21/328 , H01S5/24
CPC分类号： H01S5/18313 , B82Y20/00 , H01S5/02276 , H01S5/0425 , H01S5/0607 , H01S5/18311 , H01S5/1833 , H01S5/18355 , H01S5/18369 , H01S5/18377 , H01S5/18391 , H01S5/32325 , H01S5/32341 , H01S5/3404 , H01S5/3432 , H01S5/423 , H01S2301/166 , H01S2304/04
摘要： A laser diode allowed to stabilize the polarization direction of laser light in one direction is provided. The laser diode includes a laminate configuration including a lower multilayer reflecting mirror, an active layer and an upper multilayer reflecting mirror in order from a substrate side, in which the laminate configuration includes a columnar mesa section including an upper part of the lower multilayer reflecting mirror, the active layer and the upper multilayer reflecting mirror, and the lower multilayer reflecting mirror includes a plurality of pairs of a low refractive index layer and a high refractive index layer, and a plurality of oxidation layers nonuniformly distributed in a direction rotating around a central axis of the mesa section in a region except for a central region of one or more of the low refractive index layers.
摘要翻译：提供允许在一个方向上稳定激光的偏振方向的激光二极管。激光二极管包括从基板侧起按顺序包括下层多层反射镜，有源层和上多层反射镜的叠层结构，其中层叠结构包括柱状台面部分，该柱状台面部分包括下多层反射镜的上部有源层和上层多层反射镜以及下层多层反射镜包括多对低折射率层和高折射率层，以及多个氧化层，其不均匀分布在围绕中心的方向上旋转在除了一个或多个低折射率层的中心区域之外的区域中的台面部分的轴线。

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