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1. 发明授权

US08385381B2 Vertical cavity surface emitting laser 有权
标题翻译：垂直腔表面发射激光
公开(公告)号：US08385381B2
公开(公告)日：2013-02-26
申请号：US11427003
申请日：2006-06-28
申请人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi , Yuji Masui
发明人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi , Yuji Masui
IPC分类号： H01S5/00
CPC分类号： H01S5/18391 , H01S5/18313 , H01S5/18325 , H01S5/18327 , H01S5/18338 , H01S5/18344 , H01S5/18355 , H01S2301/166
摘要： In a VCSEL, a first multilayer film reflector, an active layer having a light emitting central region, a second multilayer film reflector, and a transverse mode adjustment layer are layered in this order. The first multilayer film reflector has a quadrangle current injection region with an intersection of diagonal lines corresponding to the light emitting central region. The second multilayer film reflector has a light emitting window provided in a region corresponding to one diagonal line of the current injection region and a pair of grooves provided with the light emitting window in between. The transverse mode adjustment layer is provided correspondingly to the light emitting window, and reflectance of a peripheral region thereof is lower than that of a central region thereof.
摘要翻译：在VCSEL中，依次层叠第一多层膜反射体，具有发光中心区域的有源层，第二多层膜反射体，横模式调整层。第一多层膜反射器具有四边形电流注入区域，对应于发光中心区域的对角线交叉。第二多层膜反射器具有设置在对应于当前注入区域的一个对角线的区域中的发光窗口和设置在其间的发光窗口的一对凹槽。相对于发光窗设置横向模式调整层，其周边区域的反射率低于其中央区域的反射率。

2. 发明申请

US20090129417A1 Surface-Emitting Laser Diode and Method of Manufacturing the Same 有权
标题翻译：表面发射激光二极管及其制造方法
公开(公告)号：US20090129417A1
公开(公告)日：2009-05-21
申请号：US12227443
申请日：2007-06-04
申请人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi
发明人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi
IPC分类号： H01S5/18 , H01L21/02
CPC分类号： H01S5/18355 , H01S5/0425 , H01S5/18311 , H01S5/18313 , H01S5/1833 , H01S5/18372 , H01S5/3201 , H01S5/423
摘要： A surface-emitting laser diode capable of being manufactured easily at low cost, and capable of stabilizing the polarization direction of laser light in one direction and achieving higher output is provided. A light emission section 20 in which a lower first DBR mirror layer 12, a lower second DBR mirror layer 13, a lower spacer layer 14, an active layer 15 including a light emission region 15A, an upper spacer layer 16, a current confinement layer 17, an upper DBR mirror layer 18 and a contact layer 19 are laminated in this order is included on a substrate 10. The lower first DBR mirror layer 12 includes an oxidation section 30 nonuniformly distributed in a direction rotating around the light emission region 15A in a periphery of a region corresponding to the light emission region 15A. The oxidation section 30 includes a pair of multilayer films 31 and 32, and is formed by oxidizing a low refractive index layer 12A. Thereby, an anisotropic stress according to nonuniform distributions of the multilayer films 31 and 32 is generated in the active layer 15.
摘要翻译：提供了能够以低成本容易地制造并能够稳定激光在一个方向上的偏振方向并实现更高输出的表面发射激光二极管。发光部20，其中下部第一DBR镜面层12，下部第二DBR镜面层13，下部间隔层14，包括发光区域15A的有源层15，上部间隔层16，电流限制层如图17所示，上部DBR镜层18和接触层19依次层叠在基板10上。下部第一DBR镜面层12包括氧化部30，该氧化部30在围绕发光区域15A旋转的方向不均匀地分布与发光区域15A对应的区域的周边。氧化部分30包括一对多层膜31和32，并且通过氧化低折射率层12A而形成。由此，在有源层15中产生根据多层膜31,32的不均匀分布的各向异性的应力。

3. 发明授权

US07920615B2 Surface-emitting laser diode and method of manufacturing the same 有权
标题翻译：表面发射激光二极管及其制造方法
公开(公告)号：US07920615B2
公开(公告)日：2011-04-05
申请号：US12227443
申请日：2007-06-04
申请人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi
发明人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi
IPC分类号： H01S5/00
CPC分类号： H01S5/18355 , H01S5/0425 , H01S5/18311 , H01S5/18313 , H01S5/1833 , H01S5/18372 , H01S5/3201 , H01S5/423
摘要： A surface-emitting laser diode capable of being manufactured easily at low cost, and capable of stabilizing the polarization direction of laser light in one direction and achieving higher output is provided. A light emission section 20 in which a lower first DBR mirror layer 12, a lower second DBR mirror layer 13, a lower spacer layer 14, an active layer 15 including a light emission region 15A, an upper spacer layer 16, a current confinement layer 17, an upper DBR mirror layer 18 and a contact layer 19 are laminated in this order is included on a substrate 10. The lower first DBR mirror layer 12 includes an oxidation section 30 nonuniformly distributed in a direction rotating around the light emission region 15A in a periphery of a region corresponding to the light emission region 15A. The oxidation section 30 includes a pair of multilayer films 31 and 32, and is formed by oxidizing a low refractive index layer 12A. Thereby, an anisotropic stress according to nonuniform distributions of the multilayer films 31 and 32 is generated in the active layer 15.
摘要翻译：提供了能够以低成本容易地制造并能够稳定激光在一个方向上的偏振方向并实现更高输出的表面发射激光二极管。发光部20，其中下部第一DBR镜面层12，下部第二DBR镜面层13，下部间隔层14，包括发光区域15A的有源层15，上部间隔层16，电流限制层如图17所示，上部DBR镜层18和接触层19依次层叠在基板10上。下部第一DBR镜面层12包括氧化部30，该氧化部30沿着围绕发光区域15A旋转的方向不均匀地分布与发光区域15A对应的区域的周边。氧化部分30包括一对多层膜31和32，并且通过氧化低折射率层12A而形成。由此，在有源层15中产生根据多层膜31,32的不均匀分布的各向异性的应力。

4. 发明授权

US07675956B2 Vertical cavity surface emitting laser and method for manufacturing the same 失效
标题翻译：垂直腔表面发射激光器及其制造方法
公开(公告)号：US07675956B2
公开(公告)日：2010-03-09
申请号：US12076791
申请日：2008-03-24
申请人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi , Takahiro Arakida
发明人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi , Takahiro Arakida
IPC分类号： H01S5/00
CPC分类号： H01S5/18355 , H01S5/0425 , H01S5/1017 , H01S5/18311 , H01S5/18313 , H01S5/18333 , H01S5/18391 , H01S2301/14
摘要： A Vertical Cavity Surface Emitting Laser capable of being easily and inexpensively manufactured and stabilizing the polarization direction of laser light in one direction is provided. The VCSEL includes a semiconductor lamination structure including a first multilayer film reflector, an active layer having a light emitting region, and a second multilayer film reflectors, in this order over a substrate from the substrate side. The semiconductor lamination structure has a pair of grooves provided with a region opposed to the light emitting region in between, and one or a plurality of first oxidation layers including a first non-oxidation region provided at least in a region opposed to the light emitting region and a first oxidation region provided on each side face of the pair of grooves.
摘要翻译：提供了能够容易且廉价地制造并稳定激光在一个方向的偏振方向的垂直腔面发射激光器。 VCSEL包括从衬底侧在衬底上依次包括第一多层膜反射器，具有发光区域的有源层和第二多层膜反射器的半导体层叠结构。半导体层叠结构具有设置有与其间的发光区域相对的区域的一对沟槽，以及包括至少设置在与发光区域相对的区域中的第一非氧化区域的一个或多个第一氧化层以及设置在所述一对槽的每个侧面上的第一氧化区域。

5. 发明申请

US20080240194A1 Vertical cavity surface emitting laser and method of manufacturing it 失效
标题翻译：垂直腔表面发射激光器及其制造方法
公开(公告)号：US20080240194A1
公开(公告)日：2008-10-02
申请号：US12076791
申请日：2008-03-24
申请人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi , Takahiro Arakida
发明人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi , Takahiro Arakida
IPC分类号： H01S5/183 , H01L33/00
CPC分类号： H01S5/18355 , H01S5/0425 , H01S5/1017 , H01S5/18311 , H01S5/18313 , H01S5/18333 , H01S5/18391 , H01S2301/14
摘要： A VSCEL capable of being easily and inexpensively manufactured and of stabilizing the polarization direction of laser light in one direction is provided. The Vertical Cavity Surface Emitting Laser includes a semiconductor lamination structure including a first multilayer film reflector, an active layer having a light emitting region, and a second multilayer film reflector in this order over a substrate from the substrate side. The semiconductor lamination structure has a pair of grooves provided with a region opposed to the light emitting region in between, and one or a plurality of first oxidation layers including a first non-oxidation region provided at least in a region opposed to the light emitting region and a first oxidation region provided on each side face of the pair of grooves.
摘要翻译：提供了能够容易且廉价地制造并且在一个方向上稳定激光的偏振方向的VSCEL。垂直空腔表面发射激光器包括从基板侧在基板上依次包括第一多层膜反射器，具有发光区域的有源层和第二多层膜反射器的半导体层叠结构。半导体层叠结构具有设置有与其间的发光区域相对的区域的一对沟槽，以及包括至少设置在与发光区域相对的区域中的第一非氧化区域的一个或多个第一氧化层以及设置在所述一对槽的每个侧面上的第一氧化区域。

6. 发明申请

US20070014324A1 VERTICAL CAVITY SURFACE EMITTING LASER 有权
标题翻译：垂直孔表面发射激光
公开(公告)号：US20070014324A1
公开(公告)日：2007-01-18
申请号：US11427003
申请日：2006-06-28
申请人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi , Yuji Masui
发明人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi , Yuji Masui
IPC分类号： H01S3/098 , H01S5/00
CPC分类号： H01S5/18391 , H01S5/18313 , H01S5/18325 , H01S5/18327 , H01S5/18338 , H01S5/18344 , H01S5/18355 , H01S2301/166
摘要： In a VCSEL, a first multilayer film reflector, an active layer having a light emitting central region, a second multilayer film reflector, and a transverse mode adjustment layer are layered in this order. The first multilayer film reflector has a quadrangle current injection region with an intersection of diagonal lines corresponding to the light emitting central region. The second multilayer film reflector has a light emitting window provided in a region corresponding to one diagonal line of the current injection region and a pair of grooves provided with the light emitting window in between. The transverse mode adjustment layer is provided correspondingly to the light emitting window, and reflectance of a peripheral region thereof is lower than that of a central region thereof.
摘要翻译：在VCSEL中，依次层叠第一多层膜反射体，具有发光中心区域的有源层，第二多层膜反射体，横模式调整层。第一多层膜反射器具有四边形电流注入区域，对应于发光中心区域的对角线交叉。第二多层膜反射器具有设置在对应于当前注入区域的一个对角线的区域中的发光窗口和设置在其间的发光窗口的一对凹槽。相对于发光窗设置横向模式调整层，其周边区域的反射率低于其中央区域的反射率。

7. 发明授权

US08363689B2 Laser diode array, method of manufacturing same, printer, and optical communication device 有权
公开(公告)号：US08363689B2
公开(公告)日：2013-01-29
申请号：US13064218
申请日：2011-03-11
申请人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
发明人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
IPC分类号： H01S5/187
CPC分类号： H01S5/423 , H01L2224/18 , H01L2224/24137 , H01L2224/73267 , H01S5/0217 , H01S5/02272 , H01S5/02276 , H01S5/042 , H01S5/0425 , H01S5/18311 , H01S5/18341 , H01S5/1838 , H01S5/187 , H01S5/34313 , H01S2304/04 , Y10S438/977
摘要： A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.

8. 发明申请

US20070153865A1 VERTICAL CAVITY SURFACE EMITTING LASER 有权
标题翻译：垂直孔表面发射激光
公开(公告)号：US20070153865A1
公开(公告)日：2007-07-05
申请号：US11612076
申请日：2006-12-18
申请人： Osamu Maeda , Masaki Shiozaki
发明人： Osamu Maeda , Masaki Shiozaki
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S5/18333 , H01S5/18338 , H01S2301/166
摘要： A VCSEL which can be easily manufactured and can selectively suppress only high-order transverse mode oscillation is provided. The VCSEL includes a resonator, a first current confinement layer, and a second current confinement layer. The resonator includes an active layer having a light emitting region, and a pair of first multilayer reflector and a second multilayer reflector provided with the active layer in between, and resonate is generated in a given wavelength. The first current confinement layer has a current injection region is a region corresponding to the light emitting region, and is formed at a region including an antinode of a standing wave. The second current confinement layer has a current injection region with a diameter smaller than a diameter of the first current injection region and is formed at a region including a node standing wave.
摘要翻译：提供了可以容易地制造并且可以选择性地仅抑制高阶横模振荡的VCSEL。 VCSEL包括谐振器，第一电流限制层和第二电流限制层。谐振器包括具有发光区域的有源层和在其间设置有有源层的一对第一多层反射器和第二多层反射器，并且在给定波长中产生谐振。第一电流限制层具有电流注入区域是与发光区域相对应的区域，并且形成在包括驻波的波腹的区域中。第二电流限制层具有直径小于第一电流注入区的直径的电流注入区，并形成在包括节点驻波的区域。

9. 发明授权

US08435815B2 Surface-emitting semiconductor laser and manufacturing method thereof 失效
标题翻译：表面发射半导体激光器及其制造方法
公开(公告)号：US08435815B2
公开(公告)日：2013-05-07
申请号：US12926917
申请日：2010-12-17
申请人： Masaki Shiozaki , Osamu Maeda , Takahiro Arakida , Susumu Sato
发明人： Masaki Shiozaki , Osamu Maeda , Takahiro Arakida , Susumu Sato
IPC分类号： B82Y20/00
CPC分类号： H01S5/18355 , H01S5/18313 , H01S5/1833 , H01S5/18338 , H01S5/18358
摘要： A manufacturing method of a surface-emitting semiconductor laser includes the steps of: forming a stacked structure having a lower-multilayer film reflector including a lower oxidizable layer having at least one layer, an active layer having a light emitting region, an upper-multilayer film reflector including an upper oxidizable layer and an upper layer on a substrate in this order; providing a first groove in the upper layer; and providing a second groove including a portion overlapping the first groove in a planar shape and a portion not overlapping the first groove in the stacked structure.
摘要翻译：表面发射半导体激光器的制造方法包括以下步骤：形成具有下层多层膜反射体的层叠结构，所述下多层膜反射体包括具有至少一层的下部可氧化层，具有发光区域的有源层，上部多层膜膜反射器，其依次包括基板上的上部可氧化层和上层; 在上层提供第一凹槽; 并且在所述堆叠结构中设置包括与所述第一凹槽重叠的部分的平面形状的第二凹槽和不与所述第一凹槽重叠的部分。

10. 发明授权

US08098703B2 Laser diode and method of manufacturing the same 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US08098703B2
公开(公告)日：2012-01-17
申请号：US12656427
申请日：2010-01-29
申请人： Osamu Maeda , Yuji Masui , Masaki Shiozaki , Susumu Sato , Takahiro Arakida
发明人： Osamu Maeda , Yuji Masui , Masaki Shiozaki , Susumu Sato , Takahiro Arakida
IPC分类号： H01S5/00
CPC分类号： H01S5/18313 , B82Y20/00 , H01S5/02276 , H01S5/0425 , H01S5/0607 , H01S5/18311 , H01S5/1833 , H01S5/18355 , H01S5/18369 , H01S5/18377 , H01S5/18391 , H01S5/32325 , H01S5/32341 , H01S5/3404 , H01S5/3432 , H01S5/423 , H01S2301/166 , H01S2304/04
摘要： A laser diode allowed to stabilize the polarization direction of laser light in one direction is provided. The laser diode includes a laminate configuration including a lower multilayer reflecting mirror, an active layer and an upper multilayer reflecting mirror in order from a substrate side, in which the laminate configuration includes a columnar mesa section including an upper part of the lower multilayer reflecting mirror, the active layer and the upper multilayer reflecting mirror, and the lower multilayer reflecting mirror includes a plurality of pairs of a low refractive index layer and a high refractive index layer, and a plurality of oxidation layers nonuniformly distributed in a direction rotating around a central axis of the mesa section in a region except for a central region of one or more of the low refractive index layers.
摘要翻译：提供允许在一个方向上稳定激光的偏振方向的激光二极管。激光二极管包括从基板侧起按顺序包括下层多层反射镜，有源层和上多层反射镜的叠层结构，其中层叠结构包括柱状台面部分，该柱状台面部分包括下多层反射镜的上部有源层和上层多层反射镜以及下层多层反射镜包括多对低折射率层和高折射率层，以及多个氧化层，其不均匀分布在围绕中心的方向上旋转在除了一个或多个低折射率层的中心区域之外的区域中的台面部分的轴线。

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