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71. 发明申请

US20080073533A1 Inspection system and inspection method 有权
标题翻译：检验制度和检验方法
公开(公告)号：US20080073533A1
公开(公告)日：2008-03-27
申请号：US11703154
申请日：2007-02-07
申请人： Hiroshi Makino , Masaki Hasegawa , Momoyo Enyama
发明人： Hiroshi Makino , Masaki Hasegawa , Momoyo Enyama
IPC分类号： G21K7/00
CPC分类号： G03F7/70616 , H01J37/20 , H01J37/222 , H01J37/265 , H01J37/29 , H01J2237/0048 , H01J2237/223 , H01J2237/226 , H01J2237/24578 , H01J2237/24592 , H01J2237/2583
摘要： There is a need for inspecting a heightwise variation in a sample. A holder holds a sample. A charge control unit charges the sample held by the holder. A retarding power supply applies a voltage to the sample held by the holder. An electro-optic system radiates an electron beam to the sample applied with a voltage by the retarding power supply and images a mirror electron returning near the surface of the sample. An image processing unit processes a mirror image resulting from imaging the mirror electron. The image processing unit outputs information corresponding to a difference between mirror images, i.e., a mirror image acquired by imaging the mirror electron and a mirror image for a prepared standard preparation, as a heightwise variation in a sample.
摘要翻译：需要检查样品的高度变化。持有人持有样本。收费控制单元收取由持有人持有的样本。延迟电源对由保持器保持的样品施加电压。电光系统通过延迟电源将电子束辐射到施加有电压的样品，并对在样品表面附近返回的镜电子进行成像。图像处理单元处理由镜电子成像产生的镜像。图像处理单元输出与镜像相对应的信息，即通过将镜像电子成像获得的镜像和准备的标准品的镜像作为样品的高度变化。

72. 发明授权

US07326942B2 Ion beam system and machining method 有权
标题翻译：离子束系统和加工方法
公开(公告)号：US07326942B2
公开(公告)日：2008-02-05
申请号：US11210732
申请日：2005-08-25
申请人： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
发明人： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
IPC分类号： H01J37/30 , H01J37/305 , H01J37/08
CPC分类号： H01J37/3056 , G01N1/32 , H01J27/10 , H01J37/09 , H01J2237/0458 , H01J2237/0835 , H01J2237/31745 , H01J2237/31749
摘要： There is a machining method which shortens a cross-section forming time by an ion beam, a machining method which shortens a machining time for separating a micro sample from a wafer, and an ion beam machining system. The ion beam machining system has a vacuum container containing a duoplasmatron, non-axially symmetric ion beam lens and stencil mask, wherein a micro sample is removed from a sample by an argon ion beam having a steep beam profile in a direction perpendicular to the cross-section. The cross-section observations for wafer inspection/defect analysis used in device manufacture can be obtained in a short time. Further, there is a inspection/analysis method which does not cause defects even if a sample is removed and a wafer is returned to the process.
摘要翻译：存在通过离子束缩短截面形成时间的加工方法，缩短用于从晶片分离微型样品的加工时间的加工方法以及离子束加工系统。离子束加工系统具有含有双质子，非轴对称的离子束透镜和模板掩模的真空容器，其中通过具有垂直于十字的方向的陡峭波束轮廓的氩离子束从样品中除去微量样品 -部分。用于器件制造的晶圆检查/缺陷分析的横截面观察可以在短时间内获得。此外，存在即使去除样品并且晶片返回到该过程也不会引起缺陷的检查/分析方法。

73. 发明授权

US07212713B2 Optical transmission substrate, method for manufacturing optical transmission substrate and optoelectronic integrated circuit 有权
标题翻译：光传输基板，光传输基板和光电集成电路的制造方法
公开(公告)号：US07212713B2
公开(公告)日：2007-05-01
申请号：US10977170
申请日：2004-10-29
申请人： Tadashi Fukuzawa , Masaki Hasegawa
发明人： Tadashi Fukuzawa , Masaki Hasegawa
IPC分类号： G02B6/26 , G02B6/42 , G02B6/12 , G02B6/38 , G02B6/36
CPC分类号： G02B6/30 , G02B6/125 , G02B6/4214 , G02B6/43 , G02B2006/12104 , H05K1/0274 , H05K1/144
摘要： Provided is an optical transmission substrate including: a first substrate; an optical waveguide which has clad covering a core and a periphery of the core and extends on an upper surface of the first substrate; a second substrate provided parallel to the first substrate so that a lower surface thereof contacts an upper surface of the optical waveguide; a reflection surface which is provided on a cross section of the core at an end of the optical waveguide and reflects light, which travels through the core of the optical waveguide, toward the second substrate; and a light guide which is provided in the second substrate and guides the light, which is reflected toward the second substrate, toward an upper surface of the second substrate from a position closer to the core than an upper surface of the clad.
摘要翻译：提供一种光传输基板，包括：第一基板; 光波导，其具有包覆芯和芯的周边并且在第一基板的上表面上延伸的光导体; 第二基板，其平行于第一基板设置，使得其下表面接触光波导的上表面; 在所述光波导的端部设置在所述芯的截面上并反射穿过所述光波导的芯的光朝向所述第二基板的反射面; 以及导光体，其设置在所述第二基板中，并且从所述包层的上表面的距离更靠近所述芯的位置将从所述第二基板反射的光导向所述第二基板的上表面。

74. 发明申请

US20070085005A1 Pattern defect inspection method and apparatus thereof 有权
标题翻译：图案缺陷检查方法及其装置
公开(公告)号：US20070085005A1
公开(公告)日：2007-04-19
申请号：US11449650
申请日：2006-06-09
申请人： Masaki Hasegawa , Hiroshi Makino , Hikaru Koyama , Zhaohui Cheng , Hisaya Murakoshi
发明人： Masaki Hasegawa , Hiroshi Makino , Hikaru Koyama , Zhaohui Cheng , Hisaya Murakoshi
IPC分类号： G21K7/00
CPC分类号： H01J37/026 , G01R31/307 , H01J37/29 , H01J2237/0045 , H01J2237/0047 , H01J2237/045 , H01J2237/2594 , H01J2237/2817
摘要： In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.
摘要翻译：在本发明中，充电控制电极的结构从栅格型切换为狭缝型，从而在用光束照射晶片时不形成阴影。此外，在充电控制狭缝的前方设置有光束形成狭缝，防止了带电控制狭缝被用于预充电的电子束照射，从而抑制了妨碍电气控制的二次电子的产生。狭缝的形状被设计成使得电子束的强度可以朝着电子束照射区域的纵向的两端逐渐减小。此外，设置用于去除或减少不期望地形成的带电电位分布的不均匀性的初步除电器。

75. 发明申请

US20070003835A1 Composite particle for lithium rechargeable battery, manufacturing method of the same, and lithium rechargeable battery using the same 失效
标题翻译：锂可再充电电池的复合颗粒，其制造方法和使用其的锂可充电电池
公开(公告)号：US20070003835A1
公开(公告)日：2007-01-04
申请号：US11441031
申请日：2006-05-26
申请人： Masaki Hasegawa , Yasuhiko Bito
发明人： Masaki Hasegawa , Yasuhiko Bito
IPC分类号： H01M4/58 , H01M4/40
CPC分类号： H01M10/0566 , H01M4/38 , H01M4/382 , H01M4/386 , H01M4/387 , H01M4/405 , H01M4/625 , H01M4/626 , H01M10/052
摘要： A composite particle for a lithium rechargeable battery is contained in at least one of a positive electrode and a negative electrode of the lithium rechargeable battery that includes the positive electrode, the negative electrode, a separator, and non-aqueous electrolytic solution. The composite particle contains a conductive agent and an active material that can reversibly store and emit lithium ions. The composite particle is a hollow body formed of an outer wall including the active material and conductive agent, and a cavity capable of retaining non-aqueous electrolytic solution. At least one opening of the cavity that can pass the electrolytic solution is formed in the surface of the composite particle.
摘要翻译：锂二次电池用复合粒子包含在包含正极，负极，隔膜和非水电解液的锂可充电电池的正极和负极中的至少一个中。该复合颗粒含有能够可逆地储存和释放锂离子的导电剂和活性材料。复合颗粒是由包括活性材料和导电剂的外壁形成的中空体，以及能够保持非水电解液的空腔。在复合颗粒的表面形成能够通过电解液的空腔的至少一个开口。

76. 发明申请

US20060102474A1 Negative electrode for non-aqueous electrolyte secondary battery and non-aqueous electrolyte secondary battery comprising the same 有权
公开(公告)号：US20060102474A1
公开(公告)日：2006-05-18
申请号：US11258218
申请日：2005-10-26
申请人： Toshitada Sato , Masaki Hasegawa , Teruaki Yamamoto , Yasuhiko Bito
发明人： Toshitada Sato , Masaki Hasegawa , Teruaki Yamamoto , Yasuhiko Bito
IPC分类号： C25B11/12
CPC分类号： H01M4/38 , H01M4/13 , H01M4/362 , H01M4/386 , H01M4/587 , H01M10/052
摘要： A negative electrode containing an alloying material and a graphite material for providing a non-aqueous electrolyte secondary battery with a high capacity and excellent cycle characteristics. The negative electrode includes graphite and at least one alloying material capable of electrochemically absorbing and desorbing Li. The alloying material includes an A phase composed mainly of Si and a B phase including an intermetallic compound of at least one transition metal element and Si. At least one of the A phase and the B phase includes a microcrystalline or amorphous region. The weight percentage of the A phase relative to the total weight of the A phase and the B phase is greater than 40% and not greater than 95%. The weight percentage of the graphite relative to the total weight of the alloying material and the graphite is not less than 50% and not greater than 95%.

77. 发明申请

US20060065854A1 Ion beam system and machining method 有权
标题翻译：离子束系统和加工方法
公开(公告)号：US20060065854A1
公开(公告)日：2006-03-30
申请号：US11210732
申请日：2005-08-25
申请人： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
发明人： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
IPC分类号： H01J37/08
CPC分类号： H01J37/3056 , G01N1/32 , H01J27/10 , H01J37/09 , H01J2237/0458 , H01J2237/0835 , H01J2237/31745 , H01J2237/31749
摘要： There is a machining method which shortens a cross-section forming time by an ion beam, a machining method which shortens a machining time for separating a micro sample from a wafer, and an ion beam machining system. The ion beam machining system has a vacuum container containing a duoplasmatron, non-axially symmetric ion beam lens and stencil mask, wherein a micro sample is removed from a sample by an argon ion beam having a steep beam profile in a direction perpendicular to the cross-section. The cross-section observations for wafer inspection/defect analysis used in device manufacture can be obtained in a short time. Further, there is a inspection/analysis method which does not cause defects even if a sample is removed and a wafer is returned to the process.
摘要翻译：存在通过离子束缩短截面形成时间的加工方法，缩短用于从晶片分离微型样品的加工时间的加工方法以及离子束加工系统。离子束加工系统具有含有双质子，非轴对称的离子束透镜和模板掩模的真空容器，其中通过具有垂直于十字的方向的陡峭波束轮廓的氩离子束从样品中除去微量样品 -部分。用于器件制造的晶圆检查/缺陷分析的横截面观察可以在短时间内获得。此外，存在即使去除样品并且晶片返回到该过程也不会引起缺陷的检查/分析方法。

78. 发明申请

US20060017014A1 Patterned wafer inspection method and apparatus therefor 有权
公开(公告)号：US20060017014A1
公开(公告)日：2006-01-26
申请号：US11234197
申请日：2005-09-26
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： G21G5/00
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.

79. 发明申请

US20050139772A1 Patterned wafer inspection method and apparatus therefor 有权
标题翻译：图案化晶圆检查方法及其设备
公开(公告)号：US20050139772A1
公开(公告)日：2005-06-30
申请号：US11016990
申请日：2004-12-21
申请人： Masaki Hasegawa , Hisaya Murakoshi
发明人： Masaki Hasegawa , Hisaya Murakoshi
IPC分类号： G01N23/225 , G21K7/00 , H01L21/66 , G01N23/00
CPC分类号： G01N23/225 , H01J37/265 , H01J37/29 , H01J2237/24585 , H01J2237/24592
摘要： A defect inspection apparatus is provided which allows a technology for inspecting a pattern on a wafer by using an electron beam to implement a high-resolution and higher-speed inspection. A semiconductor wafer is irradiated with an electron beam and electrons reflected in the vicinity of the wafer are detected. The presence or absence of a defect and the location thereof are measured by forming an image from only a component which changes with a periodicity larger than a size of a circuit pattern or the repetition periodicity thereof by using lenses and comparing an image signal with a preset value. Since only the component which changes with a periodicity larger than the size of the circuit pattern with a surface potential distortion and the repetition periodicity thereof is observed with a resolution lower than required to observe the pattern itself instead of detecting a defect through a comparison between extremely small pattern images, an inspection throughput can be increased exponentially compared with that of a conventional SEM inspection.
摘要翻译：提供了一种缺陷检查装置，其允许通过使用电子束来检查晶片上的图案以实现高分辨率和高速检查的技术。用电子束照射半导体晶片，并检测在晶片附近反射的电子。缺陷的存在或不存在以及其位置是通过使用仅使用通过使用透镜的电路图案的尺寸或重复周期的周期性变化的分量形成图像来测量的，并且将图像信号与预设值。由于仅以比通过观察图案本身所需的分辨率低的分辨率观察周期性大于具有表面电位失真和重复周期的电路图案的尺寸的分量，而不是通过极端的比较来检测缺陷与传统SEM检查相比，小图案图像的检查吞吐量可以指数增加。

80. 发明授权

US06846593B2 Negative electrode for non-aqueous electrolyte secondary battery and battery employing the same 失效
标题翻译：非水电解质二次电池用负极及使用其的电池
公开(公告)号：US06846593B2
公开(公告)日：2005-01-25
申请号：US10089956
申请日：2001-08-01
申请人： Junichi Yamaura , Masaki Hasegawa , Shuji Tsutsumi , Shinji Kasamatsu
发明人： Junichi Yamaura , Masaki Hasegawa , Shuji Tsutsumi , Shinji Kasamatsu
IPC分类号： H01M10/05 , H01M2/02 , H01M4/133 , H01M4/136 , H01M4/36 , H01M4/58 , H01M4/587 , H01M10/0525
CPC分类号： H01M4/364 , H01M2/0222 , H01M4/02 , H01M4/133 , H01M4/136 , H01M4/58 , H01M4/587 , H01M2004/021 , H01M2004/027
摘要： 100 parts by weight of a carbon material having irreversible capacity and 20 to 150 parts by weight of a lithium-containing complex nitride represented by the general formula Li3-XMXN wherein M is at least one selected from the group consisting of Co, Ni, Mn and Cu, and wherein 0.2≦X≦0.8, are included in a negative electrode thereby to compensate for the irreversible capacity of the carbon material by the above-described nitride. This enables the maximum utilization of large capacity possessed by an amorphous carbon or low crystalline carbon, thereby making it possible to provide a non-aqueous electrolyte secondary battery having high capacity and excellent cycle reversibility.
摘要翻译： 100重量份具有不可逆容量的碳材料和20至150重量份由通式Li 3 -XMX N表示的含锂复合氮化物，其中M是选自Co，Ni，Mn中的至少一种和Cu，并且其中0.2 <= X <= 0.8，被包括在负极中，由此补偿上述氮化物对碳材料的不可逆容量。由此能够最大限度地利用由无定形碳或低结晶碳所具有的大容量，从而可以提供具有高容量和优异的循环可逆性的非水电解质二次电池。

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