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    • 77. 发明授权
    • EUV light source collector erosion mitigation
    • EUV光源收集器侵蚀减轻
    • US07180083B2
    • 2007-02-20
    • US11238828
    • 2005-09-28
    • William N. PartloAlexander I. ErshovIgor V. Fomenkov
    • William N. PartloAlexander I. ErshovIgor V. Fomenkov
    • A61N5/06G01J3/10H05G2/00
    • G03F7/70916B82Y10/00G01J1/429G03F7/70033G03F7/70175G03F7/70983G21K1/062G21K2201/067H05G2/003
    • An EUV light source collector erosion mitigation system and method is disclosed which may comprise a collector comprising a multilayered mirror collector comprising a collector outer surface composed of a capping material subject to removal due to a removing interaction with materials created in an EUV light-creating plasma; a replacement material generator positioned to deliver replacement material comprising the capping material to the collector outer surface at a rate sufficient to replace the capping material removed due to the removing interaction. The replacement material generator may comprise a plurality of replacement material generators positioned to respectively deliver replacement material to a selected portion of the collector outer surface, which may comprise a sputtering mechanism sputtering replacement capping material onto the collector outer surface.
    • 公开了一种EUV光源收集器侵蚀缓解系统和方法,其可以包括收集器,其包括多层反射镜收集器,该多层反射镜收集器包括由封装材料构成的收集器外表面,该封盖材料由于与EUV发光等离子体中产生的材料的去除相互作用而被去除 ; 替代材料发生器定位成将包含封盖材料的替换材料以足以代替由于去除相互作用而去除的封盖材料的速率传送到收集器外表面。 替代材料发生器可以包括多个替换材料发生器,其被定位成分别将替代材料递送到集电器外表面的选定部分,其可以包括溅射机构将溅射替换封盖材料涂覆到集电器外表面上。
    • 79. 发明授权
    • EUV light source collector erosion mitigation
    • EUV光源收集器侵蚀减轻
    • US07141806B1
    • 2006-11-28
    • US11237649
    • 2005-09-27
    • William N. PartloAlexander I. ErshovIgor V. FomenkovDavid W. MyersWilliam Oldham
    • William N. PartloAlexander I. ErshovIgor V. FomenkovDavid W. MyersWilliam Oldham
    • G01J1/00
    • G21K1/062B82Y10/00H05G2/003H05G2/005
    • An EUV light source collector erosion mitigation method and apparatus for a collector comprising a multilayered mirror collector comprising a collector outer surface composed of a capping material subject to removal due to a removing interaction with materials created in an EUV light-creating plasma, is disclosed which may comprise including within an EUV plasma source material a replacement material. The replacement material may comprise the same material as the capping material of the multilayered mirror. The replacement material may comprise a material that is essentially transparent to light in a selected band of EUV light, e.g., a spectrum of EUV light generated in a plasma of a plasma source material. The replacement material may comprise a material not susceptible to being etched by an etching material used to remove deposited plasma source material from the collector, e.g., a halogen etchant.
    • 公开了一种用于收集器的EUV光源收集器侵蚀缓解方法和装置,其包括多层反射镜收集器,其包括由由与在EUV发光等离子体中产生的材料的去除相互作用而被去除的封盖材料组成的收集器外表面。 可以包括在EUV等离子体源材料内包括替换材料。 替代材料可以包括与多层反射镜的封盖材料相同的材料。 替代材料可以包括对EUV光的选定频带中的光基本上透明的材料,例如在等离子体源材料的等离子体中产生的EUV光的光谱。 替代材料可以包括不易被蚀刻材料蚀刻的材料,用于从集电体例如卤素蚀刻剂去除沉积的等离子体源材料。