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71. 发明申请

US20090162537A1 POST-DEPOSITION CLEANING METHODS AND FORMULATIONS FOR SUBSTRATES WITH CAP LAYERS 有权
标题翻译：具有CAP层的底物的沉积后清洗方法和配方
公开(公告)号：US20090162537A1
公开(公告)日：2009-06-25
申请号：US12334462
申请日：2008-12-13
申请人： Artur KOLICS , Shijian LI , Tiruchirapalli ARUNAGIRI , William THIE
发明人： Artur KOLICS , Shijian LI , Tiruchirapalli ARUNAGIRI , William THIE
IPC分类号： B05D3/10 , C11D1/66 , B08B3/08 , B08B1/00
CPC分类号： H05K3/0085 , C11D7/3209 , C11D11/0047 , H01L21/02068 , H01L21/76849 , H01L21/76861
摘要： One embodiment of the present invention is a method of fabricating an integrated circuit. The method includes providing a substrate having a metal and dielectric damascene metallization layer and depositing substantially on the metal a cap. After deposition of the cap, the substrate is cleaned with a solution comprising an amine to provide a pH for the cleaning solution of 7 to about 13. Another embodiment of the presented invention is a method of cleaning substrates. Still another embodiment of the present invention is a formulation for a cleaning solution.
摘要翻译：本发明的一个实施例是一种制造集成电路的方法。该方法包括提供具有金属和电介质镶嵌金属化层并且基本上在金属上沉积盖的基板。在沉积盖之后，用包含胺的溶液清洗基底以提供7至约13的清洁溶液的pH。本发明的另一个实施方案是清洁基底的方法。本发明的另一个实施方案是用于清洁溶液的制剂。

72. 发明申请

US20080286982A1 PLASMA IMMERSION ION IMPLANTATION WITH HIGHLY UNIFORM CHAMBER SEASONING PROCESS FOR A TOROIDAL SOURCE REACTOR 有权
标题翻译：等离子体沉淀离子植入与高分辨率的室温反应器的季铵盐过程
公开(公告)号：US20080286982A1
公开(公告)日：2008-11-20
申请号：US11748783
申请日：2007-05-15
申请人： Shijian Li , Lily L. Pang , Majeed A. Foad , Seon-Mee Cho
发明人： Shijian Li , Lily L. Pang , Majeed A. Foad , Seon-Mee Cho
IPC分类号： H01L21/31
CPC分类号： H01L21/2236 , H01J37/32412 , H01J37/3244 , H01J37/32449
摘要： A method is provided for performing plasma immersion ion implantation with a highly uniform seasoning film on the interior of a reactor chamber having a ceiling and a cylindrical side wall and a wafer support pedestal facing the ceiling. The method includes providing a gas distribution ring with plural gas injection orifices on a periphery of a wafer support pedestal, the orifices facing radially outwardly from the wafer support pedestal. Silicon-containing gas is introduced through the gas distribution orifices of the ring to establish a radially outward flow pattern of the silicon-containing gas. The reactor includes pairs of conduit ports in the ceiling adjacent the side wall at opposing sides thereof and respective external conduits generally spanning the diameter of the chamber and coupled to respective pairs of the ports. The method further includes injecting oxygen gas through the conduit ports into the chamber to establish an axially downward flow pattern of oxygen gas in the chamber. RF power is coupled into the interior of each of the conduits to generate a toroidal plasma current of SixOy species passing through the chamber to deposit a seasoning layer of a SixOy material on surfaces within the chamber, while leaving the pedestal without a wafer so as to expose a wafer support surface of the pedestal.
摘要翻译：提供了一种用于在具有天花板和圆柱形侧壁的反应室的内部以及面向天花板的晶片支撑台架上执行具有高度均匀的调味膜的等离子体浸没离子注入的方法。该方法包括在晶片支撑基座的外围提供具有多个气体注入孔的气体分配环，所述孔从晶片支撑基座径向向外。含硅气体通过环的气体分配孔引入，以建立含硅气体的径向向外流动图案。反应器包括在天花板中的相邻侧壁处的相对侧的导管端口对，以及相应的外部导管，其通常跨越室的直径并且耦合到相应的端口对。该方法还包括将氧气通过导管端口注入到腔室中，以在腔室中建立轴向向下的氧气气流模式。 RF功率耦合到每个导管的内部，以产生穿过室的Si O 2 O 3种类的环形等离子体电流，以沉积Si的调味层同时在没有晶片的情况下离开基座，以便露出基座的晶片支撑表面，同时在腔室内的表面上形成一个或多个x O 材料。

73. 发明申请

US20080138967A1 PLASMA IMMERSED ION IMPLANTATION PROCESS 有权
标题翻译：等离子体离子植入过程
公开(公告)号：US20080138967A1
公开(公告)日：2008-06-12
申请号：US11608357
申请日：2006-12-08
申请人： Shijian Li , Kartik Ramaswamy , Biagio Gallo , Dong Hyung Lee , Majeed A. Foad
发明人： Shijian Li , Kartik Ramaswamy , Biagio Gallo , Dong Hyung Lee , Majeed A. Foad
IPC分类号： H01L21/425
CPC分类号： H01L21/2236 , H01L29/66575
摘要： Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, supplying a gas mixture including a reacting gas and a reducing gas into the chamber, and implanting ions from the gas mixture into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a hydrogen containing reducing gas into the chamber, and implanting ions from the gas mixture into the substrate.
摘要翻译：提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。在一个实施例中，通过等离子体浸入离子注入工艺将离子注入衬底的方法包括将衬底提供到处理室中，将包括反应气体和还原气体的气体混合物供应到室中，以及从气体中注入离子混合物进入底物。在另一个实施例中，该方法包括将衬底提供到处理室中，将包括使气体和含氢还原气体反应的气体混合物供应到腔室中，以及将离子从气体混合物注入到衬底中。

74. 发明申请

US20070295371A1 SINGLE WAFER DRYER AND DRYING METHODS 有权
标题翻译：单辊干燥机和干燥方法
公开(公告)号：US20070295371A1
公开(公告)日：2007-12-27
申请号：US11846400
申请日：2007-08-28
申请人： Younes Achkire , Alexander Lerner , Boris Govzman , Boris Fishkin , Michael Sugarman , Rashid Mavleiv , Haoquan Fang , Shijian Li , Guy Shirazi , Jianshe Tang
发明人： Younes Achkire , Alexander Lerner , Boris Govzman , Boris Fishkin , Michael Sugarman , Rashid Mavleiv , Haoquan Fang , Shijian Li , Guy Shirazi , Jianshe Tang
IPC分类号： B08B1/00
CPC分类号： H01L21/67034 , B08B3/10 , H01L21/67751 , H01L21/681 , H01L21/68764 , Y10S414/139
摘要： In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluid nozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.
摘要翻译：在第一方面，提供一种适于处理晶片的模块。模块包括具有一个或多个特征的处理部分，例如（1）可旋转晶片支撑件，用于从第一取向旋转输入晶片，其中晶片与负载端口对准至第二取向，其中晶片与卸货港（2）捕捉器，其适于在从所述处理部分卸载时与晶片被动接触和行进; （3）适于产生从其一侧到另一侧的层流空气流的封闭输出部分; （4）具有多个晶片接收器的输出部分; （5）浸没式流体喷嘴; 和/或（6）干燥气体导流板等。其它方面包括晶片处理的方法。

75. 发明申请

US20060174921A1 Single wafer dryer and drying methods 审中-公开
公开(公告)号：US20060174921A1
公开(公告)日：2006-08-10
申请号：US11398058
申请日：2006-04-04
申请人： Younes Achkire , Alexander Lerner , Boris Govzman , Boris Fishkin , Michael Sugarman , Rashid Mavleiv , Haoquan Fang , Shijian Li , Guy Shirazi , Jianshe Tang
发明人： Younes Achkire , Alexander Lerner , Boris Govzman , Boris Fishkin , Michael Sugarman , Rashid Mavleiv , Haoquan Fang , Shijian Li , Guy Shirazi , Jianshe Tang
IPC分类号： B08B3/00
CPC分类号： H01L21/67034 , B08B3/10 , H01L21/67751 , H01L21/681 , H01L21/68764 , Y10S414/139
摘要： In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluid nozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.

76. 发明申请

US20060148387A1 Vibration damping in chemical mechanical polishing system 失效
标题翻译：化学机械抛光系统中的振动阻尼
公开(公告)号：US20060148387A1
公开(公告)日：2006-07-06
申请号：US11333992
申请日：2006-01-17
申请人： Hung Chen , John White , Shijian Li , Fred Redeker , Ramin Emami
发明人： Hung Chen , John White , Shijian Li , Fred Redeker , Ramin Emami
IPC分类号： B24B29/00
CPC分类号： B24B37/30 , B24B37/12 , B24B37/32 , B24B41/007
摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.
摘要翻译：用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。保持结构和表面限定用于接收基底的空腔。保持结构包括与基座接触的上部，下部和分隔上部和下部的振动阻尼器。振动阻尼器，减震器包括当经受变形时不能反弹到其原始形状的材料。

77. 发明申请

US20060097219A1 High selectivity slurry compositions for chemical mechanical polishing 审中-公开
标题翻译：用于化学机械抛光的高选择性浆料组合物
公开(公告)号：US20060097219A1
公开(公告)日：2006-05-11
申请号：US11258466
申请日：2005-10-24
申请人： Benjamin Bonner , Anand Iyer , Olivier Nguyen , Donald Chua , Christopher Lee , Shijian Li
发明人： Benjamin Bonner , Anand Iyer , Olivier Nguyen , Donald Chua , Christopher Lee , Shijian Li
IPC分类号： C09K13/00 , H01L21/461
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A chemical-mechanical polishing composition that includes less than about 1% wt. abrasive, an additive, and water, where a weigh percent of the additive is greater than a weight percent of the abrasive. Also, a method of polishing a semiconductor substrate in a shallow trench isolation process, the method including contacting the substrate with a polishing pad of a polishing apparatus while applying a high selectivity slurry to the polishing pad, where the slurry comprises less than about 1% wt. abrasive, an additive, and water, and where a weigh percent of the additive is greater than a weight percent of the abrasive. Also, a method of making a chemical-mechanical polishing slurry composition, the method including adding together an abrasive, an additive and water to form the slurry, where a weigh percent of the additive is greater than a weight percent of the abrasive, and the abrasive and additive together comprise less than 2% by wt. of the slurry.
摘要翻译：化学机械抛光组合物，其包含小于约1重量％研磨剂，添加剂和水，其中添加剂的重量百分比大于研磨剂的重量百分比。此外，在浅沟槽隔离工艺中抛光半导体衬底的方法，该方法包括使衬底与抛光装置的抛光垫接触，同时向抛光垫施加高选择性浆料，其中浆料包含小于约1％重量研磨剂，添加剂和水，并且其中添加剂的重量百分比大于研磨剂的重量百分比。另外，制备化学 - 机械抛光浆料组合物的方法，该方法包括将研磨剂，添加剂和水相加以形成浆料，其中添加剂的重量百分比大于磨料的重量百分数，并且研磨剂和添加剂一起包含小于2重量％。的浆料。

78. 发明授权

US07022608B2 Method and composition for the removal of residual materials during substrate planarization 失效
公开(公告)号：US07022608B2
公开(公告)日：2006-04-04
申请号：US10419440
申请日：2003-04-21
申请人： Lizhong Sun , Stan Tsai , Shijian Li
发明人： Lizhong Sun , Stan Tsai , Shijian Li
IPC分类号： H01L21/302
CPC分类号： C09G1/02
摘要： A method, composition, and computer readable medium for planarizing a substrate. In one aspect, the composition includes one or more chelating agents and ions of at least one transition metal, one or more surfactants, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more chelating agents and ions of at least one transition metal. In one aspect, the method comprises processing a substrate disposed on a polishing pad including performing a first polishing process to substantially remove the copper containing material, performing a second polishing process to remove residual copper containing material, the second polishing process comprising delivering a CMP composition to the polishing pad, mixing one or more chelating agents and ions of at least one transition metal in situ with the CMP composition, and removing residual copper containing materials from the substrate surface. The invention also provides a computer readable medium bearing instructions for planarizing a substrate surface, the instructions arranged, when executed by one or more processors, to cause one or more processors to control a system to perform polishing the substrate to substantially remove copper containing material formed thereon and polishing the substrate with a CMP composition comprising one or more chelating agents and ions of at least one transition metal to remove residual copper containing material.

79. 发明授权

US07014545B2 Vibration damping in a chemical mechanical polishing system 有权
标题翻译：化学机械抛光系统中的振动阻尼
公开(公告)号：US07014545B2
公开(公告)日：2006-03-21
申请号：US10754997
申请日：2004-01-10
申请人： Hung Chih Chen , John M. White , Shijian Li , Fred C. Redeker , Ramin Emami
发明人： Hung Chih Chen , John M. White , Shijian Li , Fred C. Redeker , Ramin Emami
IPC分类号： B24B7/00
CPC分类号： B24B37/30 , B24B37/12 , B24B37/32 , B24B41/007
摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.
摘要翻译：用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。保持结构和表面限定用于接收基底的空腔。保持结构包括与基座接触的上部，下部和分隔上部和下部的振动阻尼器。振动阻尼器，减震器包括当经受变形时不能反弹到其原始形状的材料。

80. 发明授权

US07012025B2 Tantalum removal during chemical mechanical polishing 失效
公开(公告)号：US07012025B2
公开(公告)日：2006-03-14
申请号：US09755717
申请日：2001-01-05
申请人： Lizhong Sun , Stan D. Tsai , Shijian Li , Feng Liu
发明人： Lizhong Sun , Stan D. Tsai , Shijian Li , Feng Liu
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02
摘要： The invention relates generally to a composition and a method for selective removal of a barrier layer in chemical mechanical polishing. In one aspect, the composition for selective removal of a barrier layer includes at least one reducing agent, ions from at least one transitional metal, and water. The composition may further include at least one buffer for pH stability, at least one pH adjusting agent for providing an initial pH, a corrosion inhibitor, abrasive particles, and/or a metal chelating agent. In another embodiment, the invention relates generally to a composition and a method for removal of a conductive material layer and a barrier layer in chemical mechanical polishing. In one aspect, the method for removal of a conductive material layer and a barrier layer includes applying a conductive-material-layer-selective composition to a polishing pad, polishing the substrate in presence of the conductive-material-layer-selective composition, applying a barrier-layer-selective composition to a polishing pad, and polishing the substrate in presence of the barrier-layer-selective composition.

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