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1. 发明授权

US08551575B1 Methods and solutions for preventing the formation of metal particulate defect matter upon a substrate after a plating process 有权
标题翻译：用于防止在电镀工艺之后在基板上形成金属颗粒缺陷物质的方法和解决方案
公开(公告)号：US08551575B1
公开(公告)日：2013-10-08
申请号：US13401244
申请日：2012-02-21
申请人： Shijian Li , Artur K. Kolics , Tiruchirapalli N. Arunagiri
发明人： Shijian Li , Artur K. Kolics , Tiruchirapalli N. Arunagiri
IPC分类号： C23C18/16 , C23C18/50
CPC分类号： C23C18/50 , C23C18/1689 , C25D5/48
摘要： Methods and solutions for preventing the formation of metal particulate defect matter upon a substrate after plating processes are provided. In particular, solutions are provided which are free of oxidizing agents and include a non-metal pH adjusting agent in sufficient concentration such that the solution has a pH between approximately 7.5 and approximately 12.0. In some cases, a solution may include a chelating agent. In addition or alternatively, a solution may include at least two different types of complexing agents each offering a single point of attachment for binding metal ions via respectively different functional groups. In any case, at least one of the complexing agents or the chelating agent includes a non-amine or non-imine functional group. An embodiment of a method for processing a substrate includes plating a metal layer upon the substrate and subsequently exposing the substrate to a solution comprising the aforementioned make-up.
摘要翻译：提供了用于防止在电镀工艺之后在基板上形成金属颗粒缺陷物质的方法和解决方案。特别地，提供了不含氧化剂的溶液，并且包括足够浓度的非金属pH调节剂，使得溶液的pH在约7.5至约12.0之间。在一些情况下，溶液可以包括螯合剂。另外或替代地，溶液可以包括至少两种不同类型的络合剂，其各自提供用于通过分别不同的官能团结合金属离子的单个附着点。在任何情况下，至少一种络合剂或螯合剂包括非胺或非亚胺官能团。用于处理衬底的方法的实施例包括将金属层电镀在衬底上，随后将衬底暴露于包含上述组成的溶液中。

2. 发明授权

US08323460B2 Methods and systems for three-dimensional integrated circuit through hole via gapfill and overburden removal 有权
标题翻译：用于三维集成电路通孔的方法和系统通过间隙填充和覆盖层去除
公开(公告)号：US08323460B2
公开(公告)日：2012-12-04
申请号：US11820810
申请日：2007-06-20
申请人： John Boyd , Fritz Redeker , Yezdi Dordi , Hyungsuk Alexander Yoon , Shijian Li
发明人： John Boyd , Fritz Redeker , Yezdi Dordi , Hyungsuk Alexander Yoon , Shijian Li
IPC分类号： C25D17/00
CPC分类号： C25D3/00 , H01L21/2885 , H01L21/32115 , H01L21/67005 , H01L21/67023 , H01L21/67075 , H01L21/6708 , H01L21/6715 , H01L21/768 , H01L21/7684 , H01L21/76883 , H01L21/76898
摘要： Presented are methods and systems for fabricating three-dimensional integrated circuits having large diameter through-hole vias. One embodiment of the present invention provides a method of processing a wafer having holes for through-hole vias. The method comprises plating a gapfill metal on the wafer. The method also comprises chemically or electrochemically deplating a portion of the overburden metal. The method further comprises using chemical mechanical planarization to planarize the gapfill metal and to remove the remaining overburden metal. Another embodiment of the present invention is an integrated system comprising a process chamber for containing the wafer, a plating component integrated with the process chamber, and a deplating component integrated with the process chamber. The plating component is configured to electrochemically plate a gapfill metal onto the wafer to a least partially fill the holes. The deplating component is configured to chemically or to electrochemically remove a portion of the overburden metal formed by the plating component.
摘要翻译：提出了用于制造具有大直径通孔的三维集成电路的方法和系统。本发明的一个实施例提供一种处理具有用于通孔过孔的孔的晶片的方法。该方法包括在晶片上镀覆间隙填充金属。该方法还包括化学地或电化学地去除一部分覆盖层金属。该方法还包括使用化学机械平面化来平坦化间隙填充金属并除去剩余的覆盖层金属。本发明的另一实施例是一种集成系统，其包括用于容纳晶片的处理室，与处理室一体化的电镀部件，以及与处理室一体化的去掉部件。电镀部件被配置为将间隙填充金属电化学地平板化到晶片上以至少部分地填充孔。脱镀部件被配置为化学地或电化学地去除由电镀部件形成的覆盖层金属的一部分。

3. 发明授权

US08187968B2 Methods of post-contact back end of line through-hole via integration 有权
标题翻译：通过一体化的后通孔后端的方法
公开(公告)号：US08187968B2
公开(公告)日：2012-05-29
申请号：US12613518
申请日：2009-11-05
申请人： John Boyd , Fritz Redeker , Yezdi Dordi , Hyungsuk Alexander Yoon , Shijian Li
发明人： John Boyd , Fritz Redeker , Yezdi Dordi , Hyungsuk Alexander Yoon , Shijian Li
IPC分类号： H01L21/00
CPC分类号： H01L23/48 , H01L21/4763 , H01L21/76898 , H01L2924/14
摘要： Presented are methods of fabricating three-dimensional integrated circuits that include post-contact back end of line through-hole via integration for the three-dimensional integrated circuits. Another aspect of the present invention includes three-dimensional integrated circuits fabricated according to methods of the present invention.
摘要翻译：提出了制造三维集成电路的方法，其包括用于三维集成电路的集成的线路通孔的后接触后端。本发明的另一方面包括根据本发明的方法制造的三维集成电路。

4. 发明授权

US07977199B2 Method for measuring dopant concentration during plasma ion implantation 有权
标题翻译：在等离子体离子注入期间测量掺杂剂浓度的方法
公开(公告)号：US07977199B2
公开(公告)日：2011-07-12
申请号：US12777085
申请日：2010-05-10
申请人： Majeed A. Foad , Shijian Li
发明人： Majeed A. Foad , Shijian Li
IPC分类号： H01L21/00
CPC分类号： G01N21/68 , G01N21/59 , H01L21/26513 , H01L22/12 , H01L22/26
摘要： Embodiments of the invention generally provide methods for end point detection at predetermined dopant concentrations during plasma doping processes. In one embodiment, a method includes positioning a substrate within a process chamber, generating a plasma above the substrate and transmitting a light generated by the plasma through the substrate, wherein the light enters the topside and exits the backside of the substrate, and receiving the light by a sensor positioned below the substrate. The method further provides generating a signal proportional to the light received by the sensor, implanting the substrate with a dopant during a doping process, generating multiple light signals proportional to a decreasing amount of the light received by the sensor during the doping process, generating an end point signal proportional to the light received by the sensor once the substrate has a final dopant concentration, and ceasing the doping process.
摘要翻译：本发明的实施方案通常提供了在等离子体掺杂过程期间以预定掺杂剂浓度进行终点检测的方法。在一个实施例中，一种方法包括将衬底定位在处理室内，在衬底上方产生等离子体，并将由等离子体产生的光透射穿过衬底，其中光进入顶侧并离开衬底的背面，并接收通过位于基板下方的传感器进行光照射。该方法进一步提供产生与传感器接收的光成比例的信号，在掺杂过程期间用掺杂剂注入衬底，在掺杂过程期间产生与传感器接收的减少量的光成比例的多个光信号，产生一旦衬底具有最终的掺杂剂浓度，终点信号与传感器接收的光成比例，并停止掺杂过程。

5. 发明授权

US07732309B2 Plasma immersed ion implantation process 有权
标题翻译：等离子体浸入式离子注入工艺
公开(公告)号：US07732309B2
公开(公告)日：2010-06-08
申请号：US11608357
申请日：2006-12-08
申请人： Shijian Li , Kartik Ramaswamy , Biagio Gallo , Dong Hyung Lee , Majeed A. Foad
发明人： Shijian Li , Kartik Ramaswamy , Biagio Gallo , Dong Hyung Lee , Majeed A. Foad
IPC分类号： H01L21/425
CPC分类号： H01L21/2236 , H01L29/66575
摘要： Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, supplying a gas mixture including a reacting gas and a reducing gas into the chamber, and implanting ions from the gas mixture into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a hydrogen containing reducing gas into the chamber, and implanting ions from the gas mixture into the substrate.
摘要翻译：提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。在一个实施例中，通过等离子体浸入离子注入工艺将离子注入衬底的方法包括将衬底提供到处理室中，将包括反应气体和还原气体的气体混合物供应到室中，以及从气体中注入离子混合物进入底物。在另一个实施例中，该方法包括将衬底提供到处理室中，将包括使气体和含氢还原气体反应的气体混合物供应到腔室中，以及将离子从气体混合物注入到衬底中。

6. 发明授权

US07713757B2 Method for measuring dopant concentration during plasma ion implantation 有权
标题翻译：在等离子体离子注入期间测量掺杂剂浓度的方法
公开(公告)号：US07713757B2
公开(公告)日：2010-05-11
申请号：US12049047
申请日：2008-03-14
申请人： Majeed A. Foad , Shijian Li
发明人： Majeed A. Foad , Shijian Li
IPC分类号： H01L21/66 , C23F1/08 , C23C16/44
CPC分类号： G01N21/68 , G01N21/59 , H01L21/26513 , H01L22/12 , H01L22/26
摘要： Embodiments of the invention generally provide methods for end point detection at predetermined dopant concentrations during plasma doping processes. In one embodiment, a method includes positioning a substrate within a process chamber, generating a plasma above the substrate and transmitting a light generated by the plasma through the substrate, wherein the light enters the topside and exits the backside of the substrate, and receiving the light by a sensor positioned below the substrate. The method further provides generating a signal proportional to the light received by the sensor, implanting the substrate with a dopant during a doping process, generating multiple light signals proportional to a decreasing amount of the light received by the sensor during the doping process, generating an end point signal proportional to the light received by the sensor once the substrate has a final dopant concentration, and ceasing the doping process.
摘要翻译：本发明的实施方案通常提供了在等离子体掺杂过程期间以预定掺杂剂浓度进行终点检测的方法。在一个实施例中，一种方法包括将衬底定位在处理室内，在衬底上方产生等离子体，并将由等离子体产生的光透射穿过衬底，其中光进入顶侧并离开衬底的背面，并接收通过位于基板下方的传感器进行光照射。该方法进一步提供产生与传感器接收的光成比例的信号，在掺杂过程期间用掺杂剂注入衬底，在掺杂过程期间产生与传感器接收的减少量的光成比例的多个光信号，产生一旦衬底具有最终的掺杂剂浓度，终点信号与传感器接收的光成比例，并停止掺杂过程。

7. 发明授权

US07497767B2 Vibration damping during chemical mechanical polishing 有权
标题翻译：化学机械抛光时的振动阻尼
公开(公告)号：US07497767B2
公开(公告)日：2009-03-03
申请号：US11046189
申请日：2005-01-28
申请人： Hung Chih Chen , Shijian Li , John M. White , Ramin Emami , Fred C. Redeker , Steven M. Zuniga , Ramakrishna Cheboli
发明人： Hung Chih Chen , Shijian Li , John M. White , Ramin Emami , Fred C. Redeker , Steven M. Zuniga , Ramakrishna Cheboli
IPC分类号： B24B5/35
CPC分类号： B24B37/30
摘要： A carrier head for chemical mechanical polishing is described. The carrier head includes a backing assembly, a housing and a damping material. The backing assembly includes a substrate support surface. The housing is connectable to a drive shaft to rotate with the drive shaft about a rotation axis. In one implementation, the damping material is in a load path between the backing assembly and the housing to reduce transmission of vibrations from the backing assembly to the housing.
摘要翻译：描述了用于化学机械抛光的载体头。载体头包括背衬组件，壳体和阻尼材料。背衬组件包括基板支撑表面。壳体可连接到驱动轴，以驱动轴绕旋转轴线旋转。在一个实施方案中，阻尼材料位于背衬组件和壳体之间的负载路径中，以减少振动从背衬组件传递到壳体。

8. 发明授权

US07413627B2 Deposition chamber and method for depositing low dielectric constant films 有权
标题翻译：沉积室和沉积低介电常数膜的方法
公开(公告)号：US07413627B2
公开(公告)日：2008-08-19
申请号：US10997311
申请日：2004-11-23
申请人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
发明人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
IPC分类号： H01L21/3065 , C23C16/455 , C23C16/505
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.
摘要翻译：改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）被输送到周围（40）的腔室内底物支撑。将硅烷（或硅烷和SiF 4 Si的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

9. 发明申请

US20070218693A1 HIGH SELECTIVITY SLURRY COMPOSITIONS FOR CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：高选择性浆料组合物化学机械抛光
公开(公告)号：US20070218693A1
公开(公告)日：2007-09-20
申请号：US11750897
申请日：2007-05-18
申请人： Benjamin Bonner , Anand Iyer , Olivier Nguyen , Donald Chua , Christopher Lee , Shijian Li
发明人： Benjamin Bonner , Anand Iyer , Olivier Nguyen , Donald Chua , Christopher Lee , Shijian Li
IPC分类号： C09G1/00
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A chemical-mechanical polishing composition that includes less than about 1% wt. abrasive, an additive, and water, where a weigh percent of the additive is greater than a weight percent of the abrasive. Also, a method of polishing a semiconductor substrate in a shallow trench isolation process, the method including contacting the substrate with a polishing pad of a polishing apparatus while applying a high selectivity slurry to the polishing pad, where the slurry comprises less than about 1% wt. abrasive, an additive, and water, and where a weigh percent of the additive is greater than a weight percent of the abrasive. Also, a method of making a chemical-mechanical polishing slurry composition, the method including adding together an abrasive, an additive and water to form the slurry, where a weigh percent of the additive is greater than a weight percent of the abrasive, and the abrasive and additive together comprise less than 2% by wt. of the slurry.
摘要翻译：化学机械抛光组合物，其包含小于约1重量％研磨剂，添加剂和水，其中添加剂的重量百分比大于研磨剂的重量百分比。此外，在浅沟槽隔离工艺中抛光半导体衬底的方法，该方法包括使衬底与抛光装置的抛光垫接触，同时向抛光垫施加高选择性浆料，其中浆料包含小于约1％重量研磨剂，添加剂和水，并且其中添加剂的重量百分比大于研磨剂的重量百分比。另外，制备化学 - 机械抛光浆料组合物的方法，该方法包括将研磨剂，添加剂和水相加以形成浆料，其中添加剂的重量百分比大于磨料的重量百分数，并且研磨剂和添加剂一起包含小于2重量％。的浆料。

10. 发明授权

US07104267B2 Planarized copper cleaning for reduced defects 失效
标题翻译：平面化铜清洁减少缺陷
公开(公告)号：US07104267B2
公开(公告)日：2006-09-12
申请号：US09727133
申请日：2000-11-29
申请人： Ramin Emami , Shijian Li , Sen-Hou Ko , Fred C. Redeker , Madhavi Chandrachood
发明人： Ramin Emami , Shijian Li , Sen-Hou Ko , Fred C. Redeker , Madhavi Chandrachood
IPC分类号： H01L21/302
CPC分类号： H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A process for treating a copper or copper alloy substrate surface with a composition and corrosion inhibitor solution to minimize defect formation and surface corrosion, the method including applying a composition including one or more chelating agents, a pH adjusting agent to produce a pH between about 3 and about 11, and deionized water, and then applying a corrosion inhibitor solution. The composition may further comprise a reducing agent and/or corrosion inhibitor. The method may further comprise applying the corrosion inhibitor solution prior to treating the substrate surface with the composition.
摘要翻译：一种用组合物和腐蚀抑制剂溶液处理铜或铜合金基材表面以最小化缺陷形成和表面腐蚀的方法，该方法包括施加包含一种或多种螯合剂的组合物，pH调节剂以产生约3 约11，去离子水，然后涂上缓蚀剂溶液。组合物还可以包含还原剂和/或缓蚀剂。该方法还可以包括在用组合物处理基材表面之前施加腐蚀抑制剂溶液。

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