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1. 发明授权

US09058975B2 Cleaning solution formulations for substrates 有权
标题翻译：基材清洗剂配方
公开(公告)号：US09058975B2
公开(公告)日：2015-06-16
申请号：US12205896
申请日：2008-09-07
申请人： Artur Kolics , Fritz Redeker
发明人： Artur Kolics , Fritz Redeker
IPC分类号： C09K13/04 , C11D7/32 , H01L21/02 , C09K13/00 , C11D7/16 , C11D7/26 , C11D7/34 , C11D11/00
CPC分类号： H01L21/02057 , C09K13/00 , C11D3/0073 , C11D3/0084 , C11D7/16 , C11D7/261 , C11D7/3281 , C11D7/34 , C11D11/0047
摘要： Presented is a cleaning solution according to one embodiment of the present invention that includes a corrosion inhibitor, a solubilizing agent, an oxygen scavenger, and a complexing agent also capable as a pH adjustor. Another embodiment of the present invention includes cleaning solutions that include a pH adjustor, an optional complexing agent, and a corrosion inhibitor. The cleaning solutions may have a solubilizing agent optionally present, may have a surfactant optionally present, and may have a dielectric etchant optionally present.
摘要翻译：提出了根据本发明的一个实施方案的清洁溶液，其包括腐蚀抑制剂，增溶剂，除氧剂和还可以作为pH调节剂的络合剂。本发明的另一个实施方案包括包括pH调节剂，任选的络合剂和腐蚀抑制剂的清洁溶液。清洁溶液可以具有任选存在的增溶剂，可以具有任选存在的表面活性剂，并且可以具有任选存在的电介质蚀刻剂。

2. 发明授权

US08895441B2 Methods and materials for anchoring gapfill metals 有权
标题翻译：锚定缝隙金属的方法和材料
公开(公告)号：US08895441B2
公开(公告)日：2014-11-25
申请号：US13404274
申请日：2012-02-24
申请人： Artur Kolics
发明人： Artur Kolics
IPC分类号： B32B15/04 , B32B3/30
CPC分类号： C23C18/1882 , B32B3/30 , B32B15/04 , C23C18/52 , H01L21/76831 , H01L21/76879 , Y10T428/12361 , Y10T428/12389 , Y10T428/24917
摘要： One aspect of the present invention includes a method of fabricating an electronic device. According to one embodiment, the method comprises providing a substrate having dielectric oxide surface areas adjacent to electrically conductive surface areas, chemically bonding an anchor compound with the dielectric oxide surface areas so as to form an anchor layer, initiating the growth of a metal using the electrically conductive surface areas and growing the metal so that the anchor layer also bonds with the metal. The anchor compound has at least one functional group capable of forming a chemical bond with the oxide surface and has at least one functional group capable of forming a chemical bond with the metal. Another aspect of the present invention is an electronic device. A third aspect of the present invention is a solution comprising the anchor compound.
摘要翻译：本发明的一个方面包括制造电子设备的方法。根据一个实施例，所述方法包括提供具有与导电表面区域相邻的电介质氧化物表面区域的基板，将锚固化合物与电介质氧化物表面区域化学结合，以形成锚定层，从而使用导电表面积并使金属生长，使得锚定层也与金属结合。锚化合物具有至少一个能够与氧化物表面形成化学键的官能团，并且具有至少一个能够与金属形成化学键的官能团。本发明的另一方面是电子设备。本发明的第三方面是包含锚化合物的溶液。

3. 发明授权

US08328919B2 Electroless deposition solutions and process control 失效
标题翻译：无电沉积解决方案和工艺控制
公开(公告)号：US08328919B2
公开(公告)日：2012-12-11
申请号：US12731115
申请日：2010-03-24
申请人： Artur Kolics
发明人： Artur Kolics
IPC分类号： C23C18/34 , C23C18/36 , C23C18/40 , C23C18/44
CPC分类号： H01L21/02697 , C09D5/24 , C23C18/1601 , C23C18/1617 , C23C18/34 , C23C18/50 , H01L21/288 , H01L21/76849 , H05K3/244
摘要： One embodiment of the present invention is a method of electroless deposition of cap layers for fabricating an integrated circuit. The method includes controlling the composition of an electroless deposition bath so as to substantially maintain the electroless deposition properties of the bath. Other embodiments of the present invention include electroless deposition solutions. Still another embodiment of the present invention is a composition used to recondition an electroless deposition bath.
摘要翻译：本发明的一个实施例是用于制造集成电路的盖层的无电沉积方法。该方法包括控制无电沉积浴的组成，以便基本保持浴的无电沉积性能。本发明的其它实施方案包括无电沉积溶液。本发明的另一个实施方案是用于重新形成无电沉积浴的组合物。

4. 发明授权

US06913651B2 Apparatus and method for electroless deposition of materials on semiconductor substrates 有权
公开(公告)号：US06913651B2
公开(公告)日：2005-07-05
申请号：US10103015
申请日：2002-03-22
申请人： Igor Ivanov , Jonathan Weiguo Zhang , Artur Kolics
发明人： Igor Ivanov , Jonathan Weiguo Zhang , Artur Kolics
IPC分类号： C23C18/16 , H01L21/288 , B05C5/00 , B05C11/00
CPC分类号： C23C18/1676 , C23C18/1628 , C23C18/163 , C23C18/1632 , C23C18/168 , C23C18/1682 , H01L21/288
摘要： An apparatus of the invention has a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber contains a substrate holder that can be rotated around a vertical axis, and an edge-grip mechanism inside the substrate holder. The deposition chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus is also provided with reservoirs and tanks for processing liquids and gases, as well as with a solution heater and a control system for controlling temperature and pressure in the chamber. The heater can be located outside the working chamber or built into the substrate holder, or both heaters can be used simultaneously. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.

5. 发明授权

US06911067B2 Solution composition and method for electroless deposition of coatings free of alkali metals 有权
标题翻译：用于无碱沉积不含碱金属的涂层的溶液组成和方法
公开(公告)号：US06911067B2
公开(公告)日：2005-06-28
申请号：US10339260
申请日：2003-01-10
申请人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor C. Ivanov
发明人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor C. Ivanov
IPC分类号： C23C18/50 , C23C18/52
CPC分类号： C23C18/50
摘要： An electroless deposition solution of the invention for forming an alkali-metal-free coating on a substrate comprises a first-metal ion source for producing first-metal ions, a pH adjuster in the form of a hydroxide for adjusting the pH of the solution, a reducing agent, which reduces the first-metal ions into the first metal on the substrate, a complexing agent for keeping the first-metal ions in the solution, and a source of ions of a second element for generation of second-metal ions that improve the corrosion resistance of the aforementioned coating. The method of the invention consists of the following steps: preparing hydroxides of a metal such as Ni and Co by means of a complexing reaction, in which solutions of hydroxides of Ni and Co are obtained by displacing hydroxyl ions OH− beyond the external boundary of ligands of mono- or polydental complexants; preparing a complex composition based on a tungsten oxide WO3 or a phosphorous tungstic acid, such as H3[P(W3O10)4], as well as on the use of tungsten compounds for improving anti-corrosive properties of the deposited films; mixing the aforementioned solutions of salts of Co, Ni, or W and maintaining under a temperatures within the range of 20° C. to 100° C.; and carrying out deposition from the obtained mixed solution.
摘要翻译：本发明的用于在基材上形成无碱金属的涂层的无电沉积溶液包括用于产生第一金属离子的第一金属离子源，用于调节溶液pH的氢氧化物形式的pH调节剂，还原剂，其将第一金属离子还原成基底上的第一金属，用于将第一金属离子保持在溶液中的络合剂和用于产生第二金属离子的第二元素的离子源，提高上述涂层的耐腐蚀性。本发明的方法包括以下步骤：通过络合反应制备金属如Ni和Co的氢氧化物，其中通过置换羟基离子得到Ni和Co的氢氧化物溶液， SUP>超出单齿或多齿配位体配体的外界; 制备基于氧化钨WO 3或磷钨酸的复合组合物，例如H 3 [P（W 3 N）O _{10），以及使用钨化合物改善沉积膜的抗腐蚀性能; 将上述Co，Ni或W的盐溶液混合并保持在20℃至100℃的温度范围内。并从所得混合溶液中进行沉积。}

6. 发明授权

US06902605B2 Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper 有权
标题翻译：用于沉积钴的无活化无电解液和用于在铜上沉积钴覆盖/钝化层的方法
公开(公告)号：US06902605B2
公开(公告)日：2005-06-07
申请号：US10379692
申请日：2003-03-06
申请人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor Ivanov
发明人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor Ivanov
IPC分类号： C23C18/36 , C23C18/50 , C23C18/34 , B05D1/18
CPC分类号： H01L21/288 , C23C18/36 , C23C18/50 , H01L21/76849
摘要： The present invention relates to compositions and a method for electroless formation of alkaline-metal-free coatings on the basis of cobalt and composition of cobalt with tungsten and phosphorus, which have high resistance to oxidation and stability of electrical characteristics, when the Co—Cu system layer is used in IC chips. The composition of the electroless solution contains more than one reducing agents, one of which can catalyze the initial electroless deposition layer of cobalt on copper (called initiator), while the other maintains deposition of cobalt on the aforementioned initial layer as the process is continued. Small amount (100-5000 ppm) of elements from the initiator also builds into the electroless film, which is expected to further improve the barrier properties of the resultant film compared to the deposition bath without initiator. Such coating may find application in semiconductor manufacturing where properties of deposited films and controllability of the composition and physical and chemical characteristics of the deposited films may be critically important.
摘要翻译：本发明涉及组合物和无碱形成无碱金属的涂层的方法，其中钴和钴与钨和磷的组成具有很高的耐氧化性和电特性的稳定性，当Co-Cu 系统层用于IC芯片。无电溶液的组成包含多于一种还原剂，其中之一可以催化铜上的钴的初始无电沉积层（称为引发剂），而另一种还原剂继续在上述初始层上沉积钴。来自引发剂的少量（100-5000ppm）元素也构成化学镀膜，预期与无引发剂的沉积浴相比，可以进一步提高所得膜的阻隔性能。这种涂层可以应用于半导体制造中，其中沉积膜的性质和组成的可控性以及沉积膜的物理和化学特性可能是至关重要的。

7. 发明授权

US09128493B2 Method and apparatus for plating solution analysis and control 有权
标题翻译：电镀液分析与控制方法及装置
公开(公告)号：US09128493B2
公开(公告)日：2015-09-08
申请号：US12333893
申请日：2008-12-12
申请人： Ron Rulkens , Nanhai Li , Artur Kolics , Aman Jain , Darin Birtwhistle , Chee Chan
发明人： Ron Rulkens , Nanhai Li , Artur Kolics , Aman Jain , Darin Birtwhistle , Chee Chan
IPC分类号： G01N21/00 , G05D11/13 , C25D21/12 , C25D21/14 , G01N21/31 , G01N21/65 , G01N21/85 , G01N21/84
CPC分类号： G05D11/138 , C25D21/12 , C25D21/14 , G01N21/31 , G01N21/65 , G01N21/85 , G01N2021/8416
摘要： A plating system comprises a plating solution and an apparatus for control of the plating solution, the apparatus including a Raman spectrometer for measurement of organic components, a visible light spectrometer for measurement of metallic components, and a pH probe. The plating solution can be sampled continuously or at intervals. Dosing of the plating solution adjusts for components consumed or lost in the plating process. The method of dosing is based on maintaining a desired composition of the plating solution.
摘要翻译：电镀系统包括电镀溶液和用于控制电镀液的设备，该设备包括用于测量有机组分的拉曼光谱仪，用于测量金属组分的可见光光谱仪和pH探针。电镀溶液可以连续或间歇取样。电镀溶液的配量调节电镀过程中消耗或损失的组分。该给药方法是基于维持所需的电镀溶液组成。

8. 发明授权

US08921296B2 Post deposition wafer cleaning formulation 有权
标题翻译：后沉积晶片清洗配方
公开(公告)号：US08921296B2
公开(公告)日：2014-12-30
申请号：US12965777
申请日：2010-12-10
申请人： Artur Kolics
发明人： Artur Kolics
IPC分类号： C11D1/88 , C11D3/00 , C11D3/04 , C11D3/06 , C11D3/24 , C11D3/34 , C11D3/36 , C11D11/00 , C11D3/20
CPC分类号： C11D11/0047 , C11D1/88 , C11D3/0073 , C11D3/042 , C11D3/06 , C11D3/2075 , C11D3/2082 , C11D3/2086 , C11D3/245 , C11D3/3409 , C11D3/361 , C11D3/362 , H01L21/02071
摘要： Methods and systems for cleaning corrosion product of a metallic capping layer from the surface of a substrate are provided. According to one embodiment, a treatment solution includes a surfactant, a complexing agent, and a pH adjuster. The surfactant is configured to enhance wetting of the substrate surface, and inhibit further corrosion of the capping layer. The complexing agent is configured to bind to metal ions which have desorbed from the substrate surface. The pH adjuster is configured to adjust the pH to a desired level, so as to promote desorption of the corrosion product from the substrate surface.
摘要翻译：提供了用于从衬底表面清洁金属覆盖层的腐蚀产物的方法和系统。根据一个实施方案，处理溶液包括表面活性剂，络合剂和pH调节剂。表面活性剂被配置为增强基底表面的润湿，并且抑制覆盖层的进一步腐蚀。络合剂被配置成结合从衬底表面解吸的金属离子。 pH调节器被配置为将pH调节至所需水平，以便促进腐蚀产物从基底表面的解吸附。

9. 发明申请

US20130244423A1 ELECTROLESS GAP FILL 有权
标题翻译：电绝缘胶片
公开(公告)号：US20130244423A1
公开(公告)日：2013-09-19
申请号：US13424135
申请日：2012-03-19
申请人： Artur KOLICS
发明人： Artur KOLICS
IPC分类号： H01L21/288
CPC分类号： H01L21/288 , H01L21/76877 , H01L21/76883 , H01L23/53233 , H01L2924/0002 , H01L2924/00
摘要： A method for providing copper filled features is provided. Features are provided in a layer on a substrate. A simultaneous electroless copper plating and anneal is provided. The electroless copper plating is chemical-mechanical polished, where there is no annealing before the chemical-mechanical polishing and after the simultaneous electroless copper plating and anneal.
摘要翻译：提供了一种提供铜填充特征的方法。特征被提供在基底上的层中。提供同时化学镀铜和退火。无电镀铜是化学机械抛光，化学机械抛光前和化学镀铜和退火同时进行退火。

10. 发明申请

US20120282483A1 Method for Strengthening Adhesion Between Dielectric Layers Formed Adjacent to Metal Layers 有权
标题翻译：加强与金属层相邻的介电层之间的粘附强化方法
公开(公告)号：US20120282483A1
公开(公告)日：2012-11-08
申请号：US13540036
申请日：2012-07-02
申请人： Igor C. Ivanov , Weiguo Zhang , Artur Kolics
发明人： Igor C. Ivanov , Weiguo Zhang , Artur Kolics
IPC分类号： C23C8/00 , B05D5/00 , B05D3/10 , B32B15/04
CPC分类号： H01L21/64 , C23C8/02 , C23C18/1605 , C23C18/1632 , C23C18/1683 , C23C18/1803 , C23C28/00 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/3455 , H01L21/288 , H01L21/321 , H01L21/76843 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76864 , H01L21/76874 , Y10T428/1241 , Y10T428/12493 , Y10T428/12549 , Y10T428/23 , Y10T428/24628
摘要： A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.
摘要翻译：提供了一种方法，其包括形成金属层并将金属层的至少一部分转化为水合金属氧化物层。提供了另一种方法，其包括在另一电介质层上选择性地沉积电介质层并且选择性地沉积与电介质层相邻的金属层。因此，形成微电子拓扑，其包括分别包括亲水和疏水材料的下层和上层的金属特征和相邻电介质部分。本文还提供了包括具有单层的金属特征的地形，其中至少四个元件衬在下表面和金属特征的侧壁。用于形成这种单层的流体可以通过配置成测量所有四个元素的浓度的测试设备进行分析。在一些情况下，可以基于分析来调整流体的组成。

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