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61. 发明申请

US20180041666A1 IMAGE PICKUP APPARATUS 审中-公开
公开(公告)号：US20180041666A1
公开(公告)日：2018-02-08
申请号：US15786093
申请日：2017-10-17
申请人： OLYMPUS CORPORATION
发明人： Takashi NAKAYAMA
IPC分类号： H04N5/225 , H01L29/423 , H01L27/146 , H01L27/14 , H04N7/18
CPC分类号： H04N5/225 , A61B1/00002 , A61B1/05 , H01L24/85 , H01L27/14 , H01L27/146 , H01L29/42396 , H01L2224/49175 , H04N5/2251 , H04N7/183 , H04N2005/2255
摘要： An image pickup apparatus includes: an image pickup device including a light receiving surface, an opposite surface, and an inclined surface inclined at a first angle, and provided with light receiving surface electrodes on the light receiving surface; a cover glass; and a wiring board including a first main surface and a second main surface, and including wires each connected with each of the light receiving surface electrodes, back surfaces of the light receiving surface electrodes are exposed to a side of the opposite surface, distal end portions of the wires are flying leads bent at a second angle in a relation of a supplementary angle to the first angle and connected with the light receiving surface electrodes, and the second main surface at a distal end portion of the wiring board is directly fixed to the opposite surface arranged in parallel with the second main surface.

62. 发明授权

US06707495B1 Solid-state imaging device and a method of reading a signal charge in a solid-state imaging device which can reduce smear and can provide an excellent image characteristic 失效
标题翻译：固态成像装置和在固态成像装置中读取信号电荷的方法，其可以减少涂片并且可以提供优异的图像特性
公开(公告)号：US06707495B1
公开(公告)日：2004-03-16
申请号：US09385980
申请日：1999-08-30
申请人： Koichi Harada
发明人： Koichi Harada
IPC分类号： H04N314
CPC分类号： H01L29/42396 , H01L27/14812
摘要： A solid-state imaging device includes a plurality of sensor portions, and a vertical shift register corresponding to each of a series of sensor portions. A transfer electrode of the vertical shift register is formed of a first electrode and a second electrode which are repeatedly provided corresponding to the respective series of sensor portions and also formed continuously between the sensor portions adjacent to each other in the vertical direction. A signal charge is read out from each of the sensor portions through a portion below a read gate portion of the first electrode between sensor portions a located in the vertical direction.
摘要翻译：固态成像装置包括多个传感器部分和对应于一系列传感器部分中的每一个的垂直移位寄存器。垂直移位寄存器的转移电极由对应于各系列传感器部分重复设置的第一电极和第二电极形成，并且也在垂直方向上彼此相邻的传感器部分之间连续地形成。通过位于垂直方向的传感器部分a之间的第一电极的读取栅极部分下方的部分，从每个传感器部分读出信号电荷。

63. 发明授权

US06191440B1 Charge transfer device with improved charge detection sensitivity 失效
标题翻译：电荷转移装置具有改进的电荷检测灵敏度
公开(公告)号：US06191440B1
公开(公告)日：2001-02-20
申请号：US09108407
申请日：1998-07-01
申请人： Nobuhiko Mutoh , Takashi Nakano
发明人： Nobuhiko Mutoh , Takashi Nakano
IPC分类号： H01L29768
CPC分类号： H01L29/42396 , H01L29/76816
摘要： In a charge transfer device, a floating gate is provided in an insulating film which is provided on a charge transfer channel layer. A buffer amplifier is connected with the floating gate, and detects signal charges in the charge transfer channel layer to generate a signal indicative of an output voltage corresponding to the signal charges. A bias gate is provided in the insulating film apart from the floating gate to cover at least a part of the floating gate. A bias applying unit applies a bias voltage to the bias gate in response to the output voltage signal such that an alternate current (AC) component of a voltage of the floating gate is substantially equal to an AC component of a voltage of the bias gate.
摘要翻译：在电荷转移装置中，浮置栅极设置在设置在电荷传输沟道层上的绝缘膜中。缓冲放大器与浮动栅极连接，并检测电荷传输沟道层中的信号电荷，以产生指示对应于信号电荷的输出电压的信号。偏置栅极设置在绝缘膜中，与浮动栅极分开以覆盖至少一部分浮动栅极。偏置施加单元响应于输出电压信号将偏置电压施加到偏置栅极，使得浮置栅极的电压的交流电（AC）分量基本上等于偏置栅极的电压的AC分量。

64. 发明授权

US5640028A Charge transfer device with reduced parasitic capacitances for improved charge transferring 失效
标题翻译：具有降低的寄生电容的电荷转移装置，用于改善电荷转移
公开(公告)号：US5640028A
公开(公告)日：1997-06-17
申请号：US554344
申请日：1995-11-06
申请人： Seiichi Kawamoto , Yasuhito Maki , Tadakuni Narabu , Masahide Hirama
发明人： Seiichi Kawamoto , Yasuhito Maki , Tadakuni Narabu , Masahide Hirama
IPC分类号： H01L29/423 , H01L29/768 , H01L27/148
CPC分类号： H01L29/42396 , H01L29/76816
摘要： A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate for accumulating the charges transferred from the charge transfer section, an output gate section formed between the charge transfer section and the floating gate on the semiconductor substrate, and a charge detecting circuit electrically connected to the floating gate for outputting a voltage corresponding to the amount of the charges accumulated in the floating gate diffusion layer, the output gate section having a first output gate region adjacent to the charge transfer means and a second output gate region adjacent to the floating gate diffusion layer, the first output gate region having a first output gate electrode formed thereon with an insulating film therebetween, the second output gate region having a second output gate electrode formed thereon with an insulating film therebetween, a dc voltage being applied to the gate electrode, and an output voltage being applied to the second output gate electrode from the charging detecting circuit.
摘要翻译：一种形成在半导体衬底上的电荷转移装置，包括：形成在半导体衬底上用于转移电荷的电荷转移部分，形成在半导体衬底上的浮置栅极扩散层的浮动栅极，用于累积从电荷转移部分转移的电荷，输出栅极部分，形成在半导体衬底上的电荷转移部分和浮置栅极之间;以及电荷检测电路，电连接到浮置栅极，用于输出与在浮动栅极扩散层中累积的电荷量相对应的电压，栅极部分具有与电荷转移装置相邻的第一输出栅极区域和与浮置栅极扩散层相邻的第二输出栅极区域，第一输出栅极区域具有形成在其间的绝缘膜的第一输出栅电极，第二输出端栅极区域具有第二输出栅极电极在其间形成有绝缘膜，其中直流电压被施加到栅电极，并且输出电压从充电检测电路施加到第二输出栅电极。

65. 发明授权

US5612554A Charge detection device and driver thereof 失效
标题翻译：充电检测装置及其驱动器
公开(公告)号：US5612554A
公开(公告)日：1997-03-18
申请号：US263892
申请日：1994-06-22
申请人： Hiromasa Funakoshi
发明人： Hiromasa Funakoshi
IPC分类号： H01L29/423 , H01L29/768 , H01L27/148
CPC分类号： H01L29/76816 , H01L29/42396
摘要： In a charge detection device of a charge coupled device, an unnecessary overlap between a floating gate and other gates are reduced. A gate of a source follower amplifier is also formed in an active region. Further, the floating gate is connected to a gate of the source follower amplifier, and a bias gate and the floating gate overlap above a field oxide film. A bias gate voltage is controlled according to fluctuations of floating gate voltage. Thus, floating gate potential is kept constant.
摘要翻译：在电荷耦合器件的电荷检测装置中，浮置栅极和其它栅极之间的不必要的重叠被减小。源极跟随放大器的栅极也形成在有源区域中。此外，浮栅连接到源极跟随放大器的栅极，并且偏置栅极和浮置栅极重叠在场氧化物膜上方。偏置栅极电压根据浮动栅极电压的波动进行控制。因此，浮置栅极电位保持恒定。

66. 发明授权

US5536956A Charge transfer device with reduced parasitic capacitances for improved charge transferring 失效
标题翻译：具有降低的寄生电容的电荷转移装置，用于改善电荷转移
公开(公告)号：US5536956A
公开(公告)日：1996-07-16
申请号：US487887
申请日：1995-06-07
申请人： Seiichi Kawamoto , Yasuhito Maki , Tadakuni Narabu , Masahide Hirama
发明人： Seiichi Kawamoto , Yasuhito Maki , Tadakuni Narabu , Masahide Hirama
IPC分类号： H01L29/423 , H01L29/768 , H01L27/148
CPC分类号： H01L29/42396 , H01L29/76816
摘要： A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate for accumulating the charges transferred from the charge transfer section, an output gate section formed between the charge transfer section and the floating gate on the semiconductor substrate, and a charge detecting circuit electrically connected to the floating gate for outputting a voltage corresponding to the amount of the charges accumulated in the floating gate diffusion layer, the output gate section having a first output gate region adjacent to the charge transfer means and a second output gate region adjacent to the floating gate diffusion layer, the first output gate region having a first output gate electrode formed thereon with an insulating film therebetween, the second output gate region having a second output gate electrode formed thereon with an insulating film therebetween, a dc voltage being applied to the gate electrode, and an output voltage being applied to the second output gate electrode from the charging detecting circuit.
摘要翻译：一种形成在半导体衬底上的电荷转移装置，包括：形成在半导体衬底上用于转移电荷的电荷转移部分，形成在半导体衬底上的浮置栅极扩散层的浮动栅极，用于累积从电荷转移部分转移的电荷，输出栅极部分，形成在半导体衬底上的电荷转移部分和浮置栅极之间;以及电荷检测电路，电连接到浮置栅极，用于输出与在浮动栅极扩散层中累积的电荷量相对应的电压，栅极部分具有与电荷转移装置相邻的第一输出栅极区域和与浮置栅极扩散层相邻的第二输出栅极区域，第一输出栅极区域具有形成在其间的绝缘膜的第一输出栅电极，第二输出端栅极区域具有第二输出栅极电极在其间形成有绝缘膜，其中直流电压被施加到栅电极，并且输出电压从充电检测电路施加到第二输出栅电极。

67. 发明授权

US5442207A Charge coupled device 失效
标题翻译：电荷耦合器件
公开(公告)号：US5442207A
公开(公告)日：1995-08-15
申请号：US250757
申请日：1994-05-26
申请人： Jae H. Jeong
发明人： Jae H. Jeong
IPC分类号： H01L29/762 , H01L21/339 , H01L27/148 , H01L29/423 , H01L29/78
CPC分类号： H01L29/42396 , H01L27/14831
摘要： A charge coupled device including a first electrode consisting of a first region and a second region having lower resistance than the first region, and a second electrode consisting of a first region and a second region having lower resistance than this first region. The first region of the first electrode is adjacent to the first region of the second region at an interval of an insulating film. Capable of utilizing the force of electrical field, the device is superior in charge transfer efficiency as well as charge transfer velocity. It also has the capability to improve the performances of high picture quality solid state image sensing devices and time delay devices, which both necessitate a charge coupled device and operate at high frequencies. Additionally, a solid state image sensing device employing this device is not degraded in a dark state by generating a few pulse charges.
摘要翻译：一种电荷耦合器件，包括由第一区域和第二区域构成的第一电极，第一区域和第二区域具有比第一区域低的电阻，第二电极由第一区域和第二区域组成，该第二区域具有比该第一区域低的电阻。第一电极的第一区域以绝缘膜的间隔与第二区域的第一区域相邻。能够利用电场的力，该装置的电荷转移效率以及电荷转移速度是优异的。它还具有提高高画质固态摄像装置和延时装置性能的能力，这两者都需要电荷耦合器件并在高频下工作。此外，采用该装置的固态图像感测装置在黑暗状态下不会通过产生几个脉冲电荷而劣化。

68. 发明授权

US5428231A Solid-state image device including charge-coupled devices having improved electrode structure 失效
标题翻译：固态图像器件包括具有改进的电极结构的电荷耦合器件
公开(公告)号：US5428231A
公开(公告)日：1995-06-27
申请号：US269349
申请日：1994-06-30
申请人： Nagataka Tanaka , Yoshiyuki Matsunaga , Michio Sasaki , Hirofumi Yamashita , Nobuo Nakamura
发明人： Nagataka Tanaka , Yoshiyuki Matsunaga , Michio Sasaki , Hirofumi Yamashita , Nobuo Nakamura
IPC分类号： H01L21/28 , H01L27/148 , H01L29/423 , H01L29/78 , H01L27/14 , H01L31/00
CPC分类号： H01L29/42396 , H01L27/14831
摘要： A solid-state imaging device comprises a plurality of photoelectric conversion accumulation sections arranged two-dimensionally on a semiconductor substrate, a plurality of vertical CCDs for vertically transferring signal charges read out from the photoelectric conversion accumulation sections, and a horizontal CCD for receiving and horizontally transferring the signal charges transferred by the vertical CCDs. A gap between transfer electrodes of the horizontal CCD is less than a gap between transfer electrodes of the vertical CCDs. The transfer electrodes of the vertical CCDs have a single-layer electrode structure formed by patterning a first polysilicon film. The transfer electrodes of the horizontal CCD have an overlapping double-layer electrode structure comprising alternately arranged electrodes formed by patterning the first polysilicon film and electrodes intervening between the alternately arranged electrodes which are formed by patterning a second polysilicon film. The gap between the electrodes of the horizontal CCD is determined by a silicon oxide film obtained by subjecting the alternately arranged electrodes of the first polysilicon film to thermal oxidation.
摘要翻译：固态成像装置包括在半导体基板上二维布置的多个光电转换累积部分，用于垂直转移从光电转换累积部分读出的信号电荷的多个垂直CCD以及用于接收和水平的水平CCD 传输由垂直CCD传输的信号电荷。水平CCD的转印电极之间的间隙小于垂直CCD的转印电极之间的间隙。垂直CCD的转印电极具有通过图案化第一多晶硅膜形成的单层电极结构。水平CCD的转移电极具有重叠的双层电极结构，其包括交替排列的电极，其通过对第一多晶硅膜进行构图而形成，并且通过图案化第二多晶硅膜而形成交替排列的电极之间的电极。水平CCD的电极之间的间隙由通过对第一多晶硅膜的交替排列的电极进行热氧化而获得的氧化硅膜确定。

69. 发明授权

US5338946A Solid state image sensor with fast reset 失效
标题翻译：具有快速复位的固态图像传感器
公开(公告)号：US5338946A
公开(公告)日：1994-08-16
申请号：US2446
申请日：1993-01-08
申请人： Robert M. Guidash
发明人： Robert M. Guidash
IPC分类号： H01L27/148 , H01L29/423 , H01L29/60 , H01L29/796 , H01L31/05
CPC分类号： H01L29/42396 , H01L27/14831 , H01L27/14887
摘要： A solid-state image sensor has a body of a semiconductor material of one conductivity type having a surface. A plurality of photodetectors are in the body at the surface and are arranged in at least one line. The photodetectors are adapted to photogenerate charge carriers. A CCD shift register is in the body at the surface and extends along the line of photodetectors. Transfer means is provided between the photodetectors and the CCD shift register for transferring charge carriers from the photodetectors to the CCD shift register. A buried region of a conductivity type opposite that of the body is in the body and spaced from the surface. The buried region extends under the photodetectors, CCD shift register, and transfer means. A contact region extends through the body from the surface to the buried region. The contact region is of the same conductivity type as the buried region but of higher conductivity. The contact region is electrically connected to a source of voltage for selectively biasing the buried region so as to transfer electrons from the photodetectors, CCD shift register, and transfer means so as to reset the image sensor.
摘要翻译：固态图像传感器具有具有表面的一种导电类型的半导体材料的主体。多个光电检测器位于表面的主体中并且布置在至少一条线上。光电探测器适于光电生成电荷载体。 CCD移位寄存器位于表面的主体中，并沿着光电检测器的线延伸。在光电检测器和CCD移位寄存器之间提供传送装置，用于将电荷载体从光电检测器传送到CCD移位寄存器。与身体相反的导电类型的掩埋区域在体内并与表面间隔开。掩埋区域在光电探测器下方延伸，CCD移位寄存器和传输装置。接触区域从表面延伸穿过主体到掩埋区域。接触区域具有与掩埋区域相同的导电类型，但具有较高的导电性。接触区域电连接到电压源，用于选择性地偏置埋入区域，以便从光电检测器，CCD移位寄存器和传送装置传送电子，以便复位图像传感器。

70. 发明授权

US4994875A Virtual phase charge transfer device 失效
标题翻译：虚拟电荷转移装置
公开(公告)号：US4994875A
公开(公告)日：1991-02-19
申请号：US344544
申请日：1989-04-25
申请人： Jaroslay Hynecek
发明人： Jaroslay Hynecek
IPC分类号： G11C19/28 , G11C27/04 , H01L21/339 , H01L21/8234 , H01L27/148 , H01L29/423 , H01L29/768
CPC分类号： H01L29/66954 , G11C19/282 , G11C27/04 , H01L21/823406 , H01L27/148 , H01L29/42396 , H01L29/76833 , H01L29/76866
摘要： A uniphase, buried-channel, semiconductor charge transfer device wherein a portion of each cell includes an inversion layer, or "virtual electrode" at the semiconductor surface, shielding that region from any gate-induced change in potential. Each cell is comprised of four regions (I, II, III, IV) wherein the characteristic impurity profile of each region determines the maximum potential generated therein for the gate "on" and gate "off" conditions. Clocking the gate causes the potential maxima in regions I and II to cycle above and below the fixed potential maxima in regions III and IV beneath the virtual electrode. Directionality of charge transfer is thereby achieved, since the potential maximum for region II (.phi..sub.max II) remains greater than for region I (.phi..sub.max I) and .phi..sub.max IV>.phi..sub.max III, for both gate conditions. A self-aligned process for fabrication is provided, including a number of ion implant stages to fix the required impurity profiles in each cell for generating the correct potential profiles for charge propagation. CCD imagers, memory devices, and analog processors are contemplated systems wherein the invention is to be implemented.
摘要翻译：一种单相埋入通道的半导体电荷转移装置，其中每个单元的一部分包括反型层或半导体表面处的“虚拟电极”，屏蔽该区域不受任何栅极引起的电位变化。每个单元由四个区域（I，II，III，IV）组成，其中每个区域的特征杂质分布决定了栅极“导通”和栅极“关闭”条件下产生的最大电位。对门进行时钟导致区域I和II中的电位最大值在虚拟电极下方的区域III和IV中的固定电位最大值之上和之下循环。由此实现电荷转移的方向性，因为对于两个栅极条件，区域II（phi maxII）的电势最大值保持大于区域I（phi maxI）和phi maxIV> phi maxIII。提供了一种用于制造的自对准工艺，其包括多个离子注入阶段，以在每个单元中固定所需的杂质分布，以产生用于电荷传播的正确的电位分布。 CCD成像器，存储器件和模拟处理器是其中将实现本发明的预期系统。

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