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1. 发明授权

US08587681B2 Extended depth of field for image sensor 有权
标题翻译：图像传感器扩展景深
公开(公告)号：US08587681B2
公开(公告)日：2013-11-19
申请号：US12275632
申请日：2008-11-21
申请人： Robert M. Guidash
发明人： Robert M. Guidash
IPC分类号： H04N5/225 , H04N9/04 , G03B7/00 , H04N5/235
CPC分类号： H04N5/238 , H04N5/232 , H04N5/23232 , H04N5/2355 , H04N5/2356 , H04N5/3454 , H04N5/3532
摘要： A method for forming an image, implemented at least in part by a data processing apparatus, by obtaining a first image of a scene from a first subset of pixels in an image sensor array at a first f/# setting, adjusting the imaging optics that obtain light from the scene at a second f/# setting, obtaining a second image of the scene from a second subset of pixels in the image sensor array, and forming a composite image by combining image data from at least the first and second images.
摘要翻译：一种用于形成图像的方法，所述方法至少部分地由数据处理装置实现，通过以第一f /＃设置从图像传感器阵列中的第一像素子集获得场景的第一图像，调整成像光学系统，在第二f /＃设置下从场景获取光，从图像传感器阵列中的第二像素子集获得场景的第二图像，以及通过组合来自至少第一和第二图像的图像数据来形成合成图像。

2. 发明授权

US08558292B2 Active pixel sensor having two wafers 有权
标题翻译：有源像素传感器具有两个晶圆
公开(公告)号：US08558292B2
公开(公告)日：2013-10-15
申请号：US12813605
申请日：2010-06-11
申请人： Robert M. Guidash
发明人： Robert M. Guidash
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14634 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14687
摘要： A vertically-integrated active pixel sensor includes a sensor wafer connected to a support circuit wafer. Inter-wafer connectors or connector wires transfer signals between the sensor wafer and the support circuit wafer. The active pixel sensor can be fabricated by attaching the sensor wafer to a handle wafer using a removable interface layer. Once the sensor wafer is attached to the handle wafer, the sensor wafer is backside thinned to a given thickness. The support circuit wafer is then attached to the sensor wafer and the handle wafer separated from the sensor wafer.
摘要翻译：垂直集成的有源像素传感器包括连接到支撑电路晶片的传感器晶片。晶片间连接器或连接器线在传感器晶片和支撑电路晶片之间传送信号。可以通过使用可移除的界面层将传感器晶片附接到处理晶片来制造有源像素传感器。一旦传感器晶片连接到处理晶片，传感器晶片的背面变薄到给定的厚度。然后将支撑电路晶片连接到传感器晶片，并且把手晶片与传感器晶片分离。

3. 发明授权

US08378398B2 Photodetector isolation in image sensors 有权
标题翻译：图像传感器中的光电检测器隔离
公开(公告)号：US08378398B2
公开(公告)日：2013-02-19
申请号：US12966224
申请日：2010-12-13
申请人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
发明人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/1463 , H01L27/14643
摘要： Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed along an interior bottom and sidewalls of each trench. A second dielectric structure is disposed over the pinning layer. The dielectric structures include a silicon nitride layer disposed over an oxide layer. An n-type isolation layer is disposed along only a portion of the exterior bottom of the trench and the exterior sidewall of the trench immediately adjacent to the photodetector. The n-type isolation layer is not disposed along the remaining portion of the bottom or the opposing exterior sidewall of the trench.
摘要翻译：浅沟槽隔离区设置在与光电检测器的收集区域相邻并且横向邻近电荷 - 电压转换区域的n型硅半导体层中。浅沟槽隔离区域各自包括设置在硅半导体层中的沟槽和沿着每个沟槽的内部底部和侧壁设置的第一介电结构。第二电介质结构设置在钉扎层之上。电介质结构包括设置在氧化物层上的氮化硅层。 n型隔离层仅沿着沟槽的外部底部的一部分和紧邻光电检测器的沟槽的外侧壁设置。 n型隔离层不沿着沟槽的底部或相对的外侧壁的剩余部分设置。

4. 发明授权

US08178938B2 Active pixel sensor having two wafers 有权
标题翻译：有源像素传感器具有两个晶圆
公开(公告)号：US08178938B2
公开(公告)日：2012-05-15
申请号：US13051036
申请日：2011-03-18
申请人： Robert M. Guidash
发明人： Robert M. Guidash
IPC分类号： H01L31/0232
CPC分类号： H01L27/14634 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14687
摘要： A vertically-integrated active pixel sensor includes a sensor wafer connected to a support circuit wafer. Inter-wafer connectors or connector wires transfer signals between the sensor wafer and the support circuit wafer. The active pixel sensor can be fabricated by attaching the sensor wafer to a handle wafer using a removable interface layer. Once the sensor wafer is attached to the handle wafer, the sensor wafer is backside thinned to a given thickness. The support circuit wafer is then attached to the sensor wafer and the handle wafer separated from the sensor wafer.
摘要翻译：垂直集成的有源像素传感器包括连接到支撑电路晶片的传感器晶片。晶片间连接器或连接器线在传感器晶片和支撑电路晶片之间传送信号。可以通过使用可移除的界面层将传感器晶片附接到处理晶片来制造有源像素传感器。一旦传感器晶片连接到处理晶片，传感器晶片的背面变薄到给定的厚度。然后将支撑电路晶片连接到传感器晶片，并且把手晶片与传感器晶片分离。

5. 发明申请

US20120002092A1 LOW NOISE ACTIVE PIXEL SENSOR 审中-公开
标题翻译：低噪声有源像素传感器
公开(公告)号：US20120002092A1
公开(公告)日：2012-01-05
申请号：US12826725
申请日：2010-06-30
申请人： Robert M. Guidash
发明人： Robert M. Guidash
IPC分类号： H04N5/335 , H01L27/146
CPC分类号： H01L27/14634 , H01L27/14603 , H01L27/14636 , H01L27/14641 , H01L27/1469 , H04N1/00307 , H04N5/37457
摘要： A vertically-integrated active pixel sensor includes a sensor layer connected to a circuit layer. At least one pixel region on the sensor layer includes a photodetector and a charge-to-voltage converter. At least one pixel region on the circuit layer consists of a source follower input transistor. A connector connects the charge-to-voltage converter to a gate of the source follower input transistor. The connector is used to transfer a signal from the charge-to-voltage converter to the source follower input transistor.
摘要翻译：垂直集成的有源像素传感器包括连接到电路层的传感器层。传感器层上的至少一个像素区域包括光电检测器和电荷 - 电压转换器。电路层上的至少一个像素区域由源极跟随器输入晶体管组成。连接器将电荷 - 电压转换器连接到源极跟随器输入晶体管的栅极。连接器用于将信号从电荷到电压转换器传送到源极跟随器输入晶体管。

6. 发明授权

US07830435B2 Image sensor and image capture system with extended dynamic range 有权
标题翻译：图像传感器和图像捕获系统具有扩展的动态范围
公开(公告)号：US07830435B2
公开(公告)日：2010-11-09
申请号：US10654313
申请日：2003-09-03
申请人： Robert M. Guidash
发明人： Robert M. Guidash
IPC分类号： H04N3/14
CPC分类号： H04N5/35554 , H04N5/335 , H04N9/045
摘要： An image sensor includes a plurality of pixels; a color filter pattern spanning at least a portion of the pixels, wherein the color filter pattern forms a color filter kernel having colors in a predetermined arrangement; and a mechanism for controlling integration time of the pixels, wherein the integration time of the plurality of pixels is spatially variant in a pattern that is correlated with the color filter array kernel.
摘要翻译：图像传感器包括多个像素; 滤色器图案，跨越至少一部分像素，其中所述滤色器图案形成具有预定布置的颜色的滤色器芯; 以及用于控制像素的积分时间的机构，其中多个像素的积分时间在与滤色器阵列核心相关联的图案中在空间上变化。

7. 发明申请

US20100182496A1 PROGRAMMABLE MICRO-ELECTROMECHANICAL MICROSHUTTER ARRAY 有权
标题翻译：可编程微电子显微镜阵列
公开(公告)号：US20100182496A1
公开(公告)日：2010-07-22
申请号：US12616995
申请日：2009-11-12
申请人： Frederick T. Brady , Robert M. Guidash , J. Kelly Lee , Marek W. Kowarz , Robert Andosca
发明人： Frederick T. Brady , Robert M. Guidash , J. Kelly Lee , Marek W. Kowarz , Robert Andosca
IPC分类号： H04N5/235 , G02B26/02
CPC分类号： G02B26/02 , G02B26/0841
摘要： A microshutter array has a frame having a light transmissive portion. Linear microshutter elements extend across the light transmissive portion and in parallel to each other. Each microshutter element has a flat blade extended in a length direction and first and second torsion arms extending outwards from each side of the blade in the length direction, the blade extending across the light transmissive portion. A control circuit provides a separately-controlled and independent voltage that is applied to each of the linear microshutter elements. A controller sets the respective voltages applied to each of the linear microshutter elements.
摘要翻译：微型扫描器阵列具有具有透光部分的框架。线性微型振荡器元件延伸穿过光透射部分并且彼此平行。每个微型振动元件具有在长度方向上延伸的平坦叶片，并且第一和第二扭转臂在长度方向上从叶片的每侧向外延伸，叶片延伸穿过透光部分。控制电路提供分别控制和独立的电压，其施加到每个线性微型振荡器元件。控制器设置施加到每个线性微动开关元件的相应电压。

8. 发明申请

US20100148295A1 BACK-ILLUMINATED CMOS IMAGE SENSORS 审中-公开
标题翻译：后置照明CMOS图像传感器
公开(公告)号：US20100148295A1
公开(公告)日：2010-06-17
申请号：US12565182
申请日：2009-09-23
申请人： Frederick T. Brady , Robert M. Guidash
发明人： Frederick T. Brady , Robert M. Guidash
IPC分类号： H01L31/0352 , H01L29/00 , H01L31/02 , H01L21/76
CPC分类号： H01L27/14601 , H01L21/304 , H01L27/1464 , H01L27/14687 , H01L27/14689
摘要： A semiconductor wafer includes one or more back-illuminated image sensors each formed in a portion of the semiconductor wafer. One or more thinning etch stops are formed in other portions of the semiconductor wafer.
摘要翻译：半导体晶片包括各自形成在半导体晶片的一部分中的一个或多个背照式图像传感器。在半导体晶片的其它部分中形成一个或多个变薄蚀刻停止。

9. 发明申请

US20090242950A1 ACTIVE PIXEL SENSOR HAVING TWO WAFERS 有权
标题翻译：具有两个波形的主动像素传感器
公开(公告)号：US20090242950A1
公开(公告)日：2009-10-01
申请号：US12058845
申请日：2008-03-31
申请人： John P. McCarten , Joseph R. Summa , Robert M. Guidash , Todd J. Anderson
发明人： John P. McCarten , Joseph R. Summa , Robert M. Guidash , Todd J. Anderson
IPC分类号： H01L27/146
CPC分类号： H01L27/14634 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14687 , H01L27/1469
摘要： A vertically-integrated image sensor includes a sensor wafer connected to a support circuit wafer. Each pixel region on the sensor wafer includes a photodetector, a charge-to-voltage conversion mechanism, a transfer mechanism for transferring charge from the photodetector to the charge-to-voltage conversion mechanism, and a reset mechanism for discharging the charge-to-voltage conversion mechanism. The support circuit wafer includes an amplifier and other support circuitry for each pixel region on the sensor wafer. An inter-wafer connector directly connects each charge-to-voltage mechanism on the sensor wafer to a respective gate to an amplifier on the support circuit wafer.
摘要翻译：垂直集成的图像传感器包括连接到支撑电路晶片的传感器晶片。传感器晶片上的每个像素区域包括光电检测器，电荷 - 电压转换机构，用于将电荷从光电检测器传送到电荷 - 电压转换机构的传送机构，以及用于将电荷 - 电压转换机构。支持电路晶片包括用于传感器晶片上的每个像素区域的放大器和其它支持电路。晶片间连接器将传感器晶片上的每个电荷 - 电压机构直接连接到支撑电路晶片上的相应的栅极到放大器。

10. 发明申请

US20080083939A1 ACTIVE PIXEL SENSOR HAVING TWO WAFERS 有权
标题翻译：具有两个波形的主动像素传感器
公开(公告)号：US20080083939A1
公开(公告)日：2008-04-10
申请号：US11867199
申请日：2007-10-04
申请人： Robert M. Guidash
发明人： Robert M. Guidash
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14634 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14687
摘要： A vertically-integrated active pixel sensor includes a sensor wafer connected to a support circuit wafer. Inter-wafer connectors or connector wires transfer signals between the sensor wafer and the support circuit wafer. The active pixel sensor can be fabricated by attaching the sensor wafer to a handle wafer using a removable interface layer. Once the sensor wafer is attached to the handle wafer, the sensor wafer is backside thinned to a given thickness. The support circuit wafer is then attached to the sensor wafer and the handle wafer separated from the sensor wafer.
摘要翻译：垂直集成的有源像素传感器包括连接到支撑电路晶片的传感器晶片。晶片间连接器或连接器线在传感器晶片和支撑电路晶片之间传送信号。可以通过使用可移除的界面层将传感器晶片附接到处理晶片来制造有源像素传感器。一旦传感器晶片连接到处理晶片，传感器晶片的背面变薄到给定的厚度。然后将支撑电路晶片连接到传感器晶片，并且把手晶片与传感器晶片分离。

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