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1. 发明授权

US5818075A Charge transfer device 失效
标题翻译：电荷转移装置
公开(公告)号：US5818075A
公开(公告)日：1998-10-06
申请号：US697178
申请日：1996-08-20
申请人： Seiichi Kawamoto , Yasuhito Maki , Tadakuni Narabu , Masahide Hirama
发明人： Seiichi Kawamoto , Yasuhito Maki , Tadakuni Narabu , Masahide Hirama
IPC分类号： H01L29/423 , H01L29/768 , H01L27/148
CPC分类号： H01L29/42396 , H01L29/76816
摘要： A charge transfer device comprising charge transfer means for transferring charges, a floating diffusion layer for accumulating the charges transferred from said charge transfer means, a floating gate electrode formed on said floating diffusion layer via an insulating layer, charge detection means connected to the floating gate electrode for outputting a voltage corresponding to an amount of charges accumulated in the floating diffusion layer, first precharge means connected to the floating gate electrode, the first precharge means starting precharging of the floating gate electrode responsive to transition of a first pulse voltage from a first state to a second state, the first precharge means terminating precharging of the floating gate electrode responsive to transition of the first pulse voltage from the second state to the first state, second precharge means connected to the floating diffusion layer, the second precharge means starting precharging of the floating diffusion layer responsive to transition of a second pulse voltage from a third state to a fourth state, the second precharge means terminating precharging of the floating diffusion layer responsive to transition of the second pulse voltage from the fourth state to the third state, first pulse supply means for supplying the first pulse voltage to the first precharge means, and second pulse supply means for supplying the second pulse voltage to the second precharge means, transition of the second pulse voltage from the third state to the fourth state being produced following transition of the first pulse voltage from the first state to the second state. In a preferred embodiment, transition of the first pulse voltage from the second state to the first state is produced following transition of the second pulse voltage from the fourth state to the third state.
摘要翻译：一种电荷转移装置，包括用于转移电荷的电荷转移装置，用于累积从所述电荷转移装置转移的电荷的浮动扩散层，经由绝缘层形成在所述浮动扩散层上的浮栅，电荷检测装置，连接到浮置栅极电极，用于输出对应于在浮动扩散层中累积的电荷量的电压，第一预充电装置连接到浮动栅电极，第一预充电装置响应于来自第一个的第一脉冲电压的第一脉冲电压的转变而开始对浮栅的预充电状态到第二状态，第一预充电装置响应于第一脉冲电压从第二状态转变到第一状态来终止浮栅的预充电，连接到浮动扩散层的第二预充电装置，第二预充电装置开始预充电的浮动扩散层r 响应于第二脉冲电压从第四状态转换到第三状态，第二预充电装置响应于第二脉冲电压从第四状态转换到第三状态来终止浮动扩散层的预充电，第一脉冲供应装置将第一脉冲电压提供给第一预充电装置;以及第二脉冲供给装置，用于将第二脉冲电压提供给第二预充电装置，第二脉冲电压从第三状态到第四状态的转变在第一脉冲转变之后产生电压从第一状态到第二状态。在优选实施例中，第二脉冲电压从第四状态转换到第三状态之后产生从第二状态到第一状态的第一脉冲电压的转变。

2. 发明授权

US5539226A Charge transfer device having an output gate electrode extending over a floating diffusion layer 失效
标题翻译：电荷转移装置具有在浮动扩散层上延伸的输出栅电极
公开(公告)号：US5539226A
公开(公告)日：1996-07-23
申请号：US476028
申请日：1995-06-07
申请人： Seiichi Kawamoto , Yasuhito Maki , Tadakuni Narabu , Masahide Hirama
发明人： Seiichi Kawamoto , Yasuhito Maki , Tadakuni Narabu , Masahide Hirama
IPC分类号： H01L29/423 , H01L29/768 , H01L27/148
CPC分类号： H01L29/42396 , H01L29/76816
摘要： A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate for accumulating the charges transferred from the charge transfer section, an output gate section formed between the charge transfer section and the floating gate on the semiconductor substrate, and a charge detecting circuit electrically connected to the floating gate for outputting a voltage corresponding to the amount of the charges accumulated in the floating gate diffusion layer, the output gate section having a first output gate region adjacent to the charge transfer means and a second output gate region adjacent to the floating gate diffusion layer, the first output gate region having a first output gate electrode formed thereon with an insulating film therebetween, the second output gate region having a second output gate electrode formed thereon with an insulating film therebetween, a dc voltage being applied to the gate electrode, and an output voltage being applied to the second output gate electrode from the charging detecting circuit.
摘要翻译：一种形成在半导体衬底上的电荷转移装置，包括：形成在半导体衬底上用于转移电荷的电荷转移部分，形成在半导体衬底上的浮置栅极扩散层的浮动栅极，用于累积从电荷转移部分转移的电荷，输出栅极部分，形成在半导体衬底上的电荷转移部分和浮置栅极之间;以及电荷检测电路，电连接到浮置栅极，用于输出与在浮动栅极扩散层中累积的电荷量相对应的电压，栅极部分具有与电荷转移装置相邻的第一输出栅极区域和与浮置栅极扩散层相邻的第二输出栅极区域，第一输出栅极区域具有形成在其间的绝缘膜的第一输出栅电极，第二输出端栅极区域具有第二输出栅极电极在其间形成有绝缘膜，其中直流电压被施加到栅电极，并且输出电压从充电检测电路施加到第二输出栅电极。

3. 发明授权

US5640028A Charge transfer device with reduced parasitic capacitances for improved charge transferring 失效
标题翻译：具有降低的寄生电容的电荷转移装置，用于改善电荷转移
公开(公告)号：US5640028A
公开(公告)日：1997-06-17
申请号：US554344
申请日：1995-11-06
申请人： Seiichi Kawamoto , Yasuhito Maki , Tadakuni Narabu , Masahide Hirama
发明人： Seiichi Kawamoto , Yasuhito Maki , Tadakuni Narabu , Masahide Hirama
IPC分类号： H01L29/423 , H01L29/768 , H01L27/148
CPC分类号： H01L29/42396 , H01L29/76816
摘要： A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate for accumulating the charges transferred from the charge transfer section, an output gate section formed between the charge transfer section and the floating gate on the semiconductor substrate, and a charge detecting circuit electrically connected to the floating gate for outputting a voltage corresponding to the amount of the charges accumulated in the floating gate diffusion layer, the output gate section having a first output gate region adjacent to the charge transfer means and a second output gate region adjacent to the floating gate diffusion layer, the first output gate region having a first output gate electrode formed thereon with an insulating film therebetween, the second output gate region having a second output gate electrode formed thereon with an insulating film therebetween, a dc voltage being applied to the gate electrode, and an output voltage being applied to the second output gate electrode from the charging detecting circuit.
摘要翻译：一种形成在半导体衬底上的电荷转移装置，包括：形成在半导体衬底上用于转移电荷的电荷转移部分，形成在半导体衬底上的浮置栅极扩散层的浮动栅极，用于累积从电荷转移部分转移的电荷，输出栅极部分，形成在半导体衬底上的电荷转移部分和浮置栅极之间;以及电荷检测电路，电连接到浮置栅极，用于输出与在浮动栅极扩散层中累积的电荷量相对应的电压，栅极部分具有与电荷转移装置相邻的第一输出栅极区域和与浮置栅极扩散层相邻的第二输出栅极区域，第一输出栅极区域具有形成在其间的绝缘膜的第一输出栅电极，第二输出端栅极区域具有第二输出栅极电极在其间形成有绝缘膜，其中直流电压被施加到栅电极，并且输出电压从充电检测电路施加到第二输出栅电极。

4. 发明授权

US5536956A Charge transfer device with reduced parasitic capacitances for improved charge transferring 失效
标题翻译：具有降低的寄生电容的电荷转移装置，用于改善电荷转移
公开(公告)号：US5536956A
公开(公告)日：1996-07-16
申请号：US487887
申请日：1995-06-07
申请人： Seiichi Kawamoto , Yasuhito Maki , Tadakuni Narabu , Masahide Hirama
发明人： Seiichi Kawamoto , Yasuhito Maki , Tadakuni Narabu , Masahide Hirama
IPC分类号： H01L29/423 , H01L29/768 , H01L27/148
CPC分类号： H01L29/42396 , H01L29/76816
摘要： A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate for accumulating the charges transferred from the charge transfer section, an output gate section formed between the charge transfer section and the floating gate on the semiconductor substrate, and a charge detecting circuit electrically connected to the floating gate for outputting a voltage corresponding to the amount of the charges accumulated in the floating gate diffusion layer, the output gate section having a first output gate region adjacent to the charge transfer means and a second output gate region adjacent to the floating gate diffusion layer, the first output gate region having a first output gate electrode formed thereon with an insulating film therebetween, the second output gate region having a second output gate electrode formed thereon with an insulating film therebetween, a dc voltage being applied to the gate electrode, and an output voltage being applied to the second output gate electrode from the charging detecting circuit.
摘要翻译：一种形成在半导体衬底上的电荷转移装置，包括：形成在半导体衬底上用于转移电荷的电荷转移部分，形成在半导体衬底上的浮置栅极扩散层的浮动栅极，用于累积从电荷转移部分转移的电荷，输出栅极部分，形成在半导体衬底上的电荷转移部分和浮置栅极之间;以及电荷检测电路，电连接到浮置栅极，用于输出与在浮动栅极扩散层中累积的电荷量相对应的电压，栅极部分具有与电荷转移装置相邻的第一输出栅极区域和与浮置栅极扩散层相邻的第二输出栅极区域，第一输出栅极区域具有形成在其间的绝缘膜的第一输出栅电极，第二输出端栅极区域具有第二输出栅极电极在其间形成有绝缘膜，其中直流电压被施加到栅电极，并且输出电压从充电检测电路施加到第二输出栅电极。

5. 发明授权

US06310369B1 Charge-to-voltage converter with adjustable conversion factor 失效
标题翻译：具有可调整转换系数的充电电压转换器
公开(公告)号：US06310369B1
公开(公告)日：2001-10-30
申请号：US08789519
申请日：1997-01-27
申请人： Tadakuni Narabu , Maki Sato , Yasuhito Maki
发明人： Tadakuni Narabu , Maki Sato , Yasuhito Maki
IPC分类号： H01L24148
CPC分类号： H01L29/76816 , G11C19/285
摘要： In a floating diffusion output type or a floating gate output type charge-to-voltage converter, the floating diffusion or the floating gate is coupled to one or more diffusion regions by means of one or more switch elements, and such elements are selectively turned on or off in such a manner that the the charge-to-voltage conversion factor is raised to obtain a great voltage amplitude when a small quantity of signal charge is input, or the conversion factor is lowered to obtain a small voltage amplitude when a large quantity of signal charge is input.
摘要翻译：在浮动扩散输出型或浮置栅极输出型电荷 - 电压转换器中，浮动扩散或浮动栅极通过一个或多个开关元件耦合到一个或多个扩散区域，并且这些元件选择性地导通或者使得当输入少量的信号电荷时提高电荷电压转换因子以获得大的电压幅度，或者当大量的转换因子降低以获得小的电压幅度时，的信号电荷被输入。

6. 发明授权

US5539536A Linear imaging sensor having improved charged transfer circuitry 失效
标题翻译：具有改进的充电转移电路的线性成像传感器
公开(公告)号：US5539536A
公开(公告)日：1996-07-23
申请号：US33364
申请日：1993-03-18
申请人： Yasuhito Maki , Motoaki Abe , Tadakuni Narabu , Hideo Nomura
发明人： Yasuhito Maki , Motoaki Abe , Tadakuni Narabu , Hideo Nomura
IPC分类号： H04N1/028 , H04N5/341 , H04N5/361 , H04N5/372 , H04N5/376 , H04N5/335
CPC分类号： H04N3/1581
摘要： A linear sensor for sampling vertically opposed pixels of a plurality of vertically arranged sensor rows substantially at a time. A plurality of horizontal transfer registers and a plurality of shift gates are provided to oppose the plurality of sensor rows. A vertical transfer register is provided at one end of the plurality of horizontal transfer registers. In the vertical transfer register, the signal charges which have been transferred by the plurality of horizontal transfer registers are transferred sequentially in vertical direction. A charge/voltage converter unit is provided at the output of the vertical transfer register. The signal charges accumulated in the vertically opposed pixels are sequentially transferred to the charge/voltage converter unit in a repetitive manner.
摘要翻译：一种线性传感器，用于基本上每次对多个垂直布置的传感器行的垂直相对的像素进行采样。提供多个水平传送寄存器和多个移位门以与多个传感器行相对。在多个水平传送寄存器的一端设置垂直传送寄存器。在垂直传送寄存器中，由多个水平传送寄存器传送的信号电荷在垂直方向依次传送。在垂直传输寄存器的输出端提供一个充电/电压转换器单元。累积在垂直相对的像素中的信号电荷被重复地依次传送到电荷/电压转换器单元。

7. 发明授权

US5086440A Charge coupled device with enhanced input structure 失效
标题翻译：充电耦合器件与增强输入结构
公开(公告)号：US5086440A
公开(公告)日：1992-02-04
申请号：US509207
申请日：1990-04-16
申请人： Tadakuni Narabu , Tetsuya Kondo , Yasuhito Maki , Katsunori Noguchi
发明人： Tadakuni Narabu , Tetsuya Kondo , Yasuhito Maki , Katsunori Noguchi
IPC分类号： G11C19/28 , G11C27/04
CPC分类号： G11C27/04 , G11C19/285
摘要： An input structure of CCD comprises a primary register having an input gate and a source region and an automatic biasing system which generates a feedback signal to be fed back to input of the primary register. The output of the automatic biasing system is connected to one of the input gate and the source of the primary register for supplying the feedback signal thereto for adjusting input bias level of the primary register. The other one of the input gate and the source is connected to an information signal input terminal to receive therefrom an information signal to be transferred therethrough.

8. 发明授权

US5642162A Charge transfer device having a signal processing circuit for correcting output voltage 失效
标题翻译：电荷转移装置具有用于校正输出电压的信号处理电路
公开(公告)号：US5642162A
公开(公告)日：1997-06-24
申请号：US631928
申请日：1996-04-15
申请人： Yasuhito Maki , Maki Sato , Tadakuni Narabu , Tadao Takagi , Hiroyuki Iwasaki , Tetsuro Goto
发明人： Yasuhito Maki , Maki Sato , Tadakuni Narabu , Tadao Takagi , Hiroyuki Iwasaki , Tetsuro Goto
IPC分类号： H01L27/148 , H01L21/339 , H01L29/762 , H04N5/335 , H04N5/341 , H04N5/351 , H04N5/357 , H04N5/361 , H04N5/369 , H04N5/372 , H04N5/3728 , H04N5/378 , H04N3/14
CPC分类号： H04N5/361 , H04N5/3728
摘要： A charge transfer device includes a circuit which can correct a fluctuated amount of light (charge amount)--output voltage characteristic with accuracy even when fluctuated by the change of temperature and the fluctuation of a power supply voltage. An output voltage characteristic in the standard state corresponding to a reference charge is stored and held in a ROM in advance. An ALU (arithmetic logical unit) corrects the light (charge amount)--output voltage characteristic by using the output voltage characteristic in the standard state corresponding to the reference charge stored in the ROM and the output voltages corresponding to the reference charge inputs from reference charge input portions in an imaging state, and corrects an output voltage (Va) corresponding to a signal charge in a practical imaging state.
摘要翻译：电荷转移装置包括可以通过温度变化和电源电压的波动波动而能够精确地校正波动量（充电量） - 输出电压特性的电路。对应于参考电荷的标准状态的输出电压特性预先存储并保存在ROM中。 ALU（算术逻辑单元）通过使用与存储在ROM中的参考电荷相对应的标准状态下的输出电压特性和对应于参考电荷的参考电荷输入的输出电压来校正光（充电量） - 输出电压特性输入部分，并且在实际成像状态下校正与信号电荷相对应的输出电压（Va）。

9. 发明授权

US5227650A Charge coupled device delay line employing a floating gate or floating diffusion gate at its intermediate output portion 失效
标题翻译：充电耦合设备延迟线在中间输出部分使用浮动门或浮动扩散门
公开(公告)号：US5227650A
公开(公告)日：1993-07-13
申请号：US824355
申请日：1992-01-23
申请人： Katsunori Noguchi , Maki Sato , Tadakuni Narabu , Yasuhito Maki
发明人： Katsunori Noguchi , Maki Sato , Tadakuni Narabu , Yasuhito Maki
IPC分类号： H01L29/762 , H01L21/339 , H01L29/768 , H04N5/335 , H04N5/341 , H04N5/372
CPC分类号： H01L29/76833 , H01L29/76816
摘要： The present invention is to provide a CCD delay line in which a deterioration of a charge transfer efficiency can be reduced by maintaining a charge amount treated in a charge transfer section provided at the rear stage of an intermediate output section. According to an aspect of the present invention, in a charge transfer device having charge transfer sections of a plurality of stages consisting of electrode pairs of a transfer gate electrode and a storage gate electrode and at least one intermediate output section provided at the rear stage of a charge transfer section of a predetermined stage from the signal input side, a cross-sectional area of at least one of the transfer gate electrode and the storage gate electrode in the charge transfer section provided at the rear stage of the intermediate output section is selected to be larger than that in the charge transfer section provided at the front stage of the intermediate output section. Further, the impurity concentration in the region of a semiconductor substrate corresponding to the transfer gate electrode in the charge transfer section provided at the rear stage of the intermediate output section is selected to be lower than that in the charge transfer section provided at the front stage of the intermediate output section, thereby the potential barrier being increased.

10. 发明授权

US5210777A Charge coupled device having switched inverting and non-inverting input signal paths, input biassing circuit and temperature compensation 失效
标题翻译：具有开关反相和非反相输入信号线，输入放大电路和温度补偿的充电耦合器件
公开(公告)号：US5210777A
公开(公告)日：1993-05-11
申请号：US509205
申请日：1990-04-16
申请人： Tadakuni Narabu , Tetsuya Kondo , Yasuhito Maki , Katsunori Noguchi
发明人： Tadakuni Narabu , Tetsuya Kondo , Yasuhito Maki , Katsunori Noguchi
IPC分类号： G11C19/28 , G11C27/04
CPC分类号： G11C19/285 , G11C27/04
摘要： A charge coupled device is provided with a first signal input path for supplying an information signal for transfer through a delay line, which contain an inverting amplifier, and a second signal input path which has no inverting amplifier. The first and second signal input paths are arranged in parallel to each other. The charge coupled device also has a switching means associated with the first and second signal input paths so as to selectively establishing connection between one of the first and second signal input paths and the delay line so that non-inverted and inverted information signals can be selectively supplied to the delay line.

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