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61. 发明授权

US09512516B1 Cooling water jet pack for high power rotary cathodes 有权
标题翻译：用于大功率旋转阴极的冷却水喷射包
公开(公告)号：US09512516B1
公开(公告)日：2016-12-06
申请号：US12888963
申请日：2010-09-23
申请人： Robert Martinson , Paul Shufflebotham , Kevin Lynch , Heinrich von Bunau , Deborah Sloan , Daniel R. Juliano
发明人： Robert Martinson , Paul Shufflebotham , Kevin Lynch , Heinrich von Bunau , Deborah Sloan , Daniel R. Juliano
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： H01J37/3417 , C23C14/0057 , C23C14/3407 , C23C14/35 , H01J37/3405 , H01J37/3429 , H01J37/3435 , H01J37/345 , H01J37/3497 , H01J2237/002 , H01J2237/332
摘要： A sputtering target assembly, including a cylindrical backing tube, a magnet assembly disposed within the backing tube, and a conduit disposed within the backing tube and adapted for transporting coolant. The conduit includes at least one first opening positioned for providing the coolant in a substantially circumferential direction from the conduit toward an inner surface of the backing tube into a gap volume between a front side of the magnet assembly and the inner surface of the backing tube.
摘要翻译：包括圆柱形背衬管，设置在背衬管内的磁体组件和设置在背衬管内并适于运输冷却剂的导管的溅射靶组件。导管包括至少一个第一开口，其定位成将冷却剂沿着从管道朝向背衬管的内表面的大致圆周方向提供到磁体组件的前侧和背衬管的内表面之间的间隙体积中。

62. 发明申请

US20160326631A1 Functionally Graded Material By In-Situ Gradient Alloy Sputter Deposition Management 有权
公开(公告)号：US20160326631A1
公开(公告)日：2016-11-10
申请号：US14706032
申请日：2015-05-07
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Hans-Juergen Eickelmann , Thorsten Muehge , Erik Rueger , Markus Schmidt
IPC分类号： C23C14/34 , C23C14/14
CPC分类号： C23C14/3464 , C23C14/027 , C23C14/3407 , C23C14/3492 , C23C14/54 , C23C14/542 , C23C14/545 , C23C14/548 , H01J37/32935 , H01J37/3429 , H01J37/3473
摘要： Embodiments relate to a sputter chamber comprising both a target surface and an anode surface. The sputter chamber has both an ingress and an egress to allow passage of a gas. The sputter chamber further includes a target substrate. A secondary material flexibly changes the composition of the target substrate in-situ by changing coverage of the target by the secondary material. Gas entering the sputter chamber interacts with the changed composition of the target. The interaction discharges a plasma alloy and the alloy condenses on the anode surface in the sputter chamber. The condensed alloy produces an alloy film.

63. 发明申请

US20160281214A1 CYLINDRICAL SPUTTERING TARGET, CYLINDRICAL COMPACT, MANUFACTURING METHOD OF CYLINDRICAL SPUTTERING TARGET, AND MANUFACTURING METHOD OF CYLINDRICAL SINTERED COMPACT 有权
标题翻译：圆柱滚子目标，圆柱压缩，圆柱喷丸目标的制造方法，以及圆柱铸造紧固件的制造方法
公开(公告)号：US20160281214A1
公开(公告)日：2016-09-29
申请号：US15082035
申请日：2016-03-28
申请人： JX NIPPON MINING & METALS CORPORATION
发明人： Yohei YAMAGUCHI
IPC分类号： C23C14/34 , C04B35/453 , C04B35/64 , C04B35/457 , C23C14/08 , H01J37/34
CPC分类号： C23C14/3414 , C04B35/01 , C04B35/453 , C04B35/457 , C04B2235/3284 , C04B2235/3293 , C04B2235/5409 , C04B2235/604 , C04B2235/608 , C04B2235/6562 , C04B2235/6567 , C04B2235/6585 , C04B2235/77 , C04B2235/94 , C04B2235/963 , C23C14/086 , C23C14/3407 , H01J37/3423 , H01J37/3426 , H01J37/3491
摘要： A cylindrical sputtering target includes a plurality of cylindrical sintered compacts adjacent to each other while having a space therebetween. The plurality of cylindrical sintered compacts have a relative density of 99.7% or higher and 99.9% or lower. The plurality of cylindrical sintered compacts adjacent to each other have a difference therebetween in the relative density of 0.1% or smaller.
摘要翻译：圆柱形溅射靶包括彼此相邻的多个圆柱形烧结体，同时它们之间具有间隔。多个圆筒状烧结体的相对密度为99.7％以上且99.9％以下。相邻的多个圆筒状烧结体的相对密度为0.1％以下。

64. 发明申请

US20160265101A1 SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体制造装置及制造半导体器件的方法
公开(公告)号：US20160265101A1
公开(公告)日：2016-09-15
申请号：US14799798
申请日：2015-07-15
申请人： Kabushiki Kaisha Toshiba
发明人： Tatsuhiko MIURA , Kazuhiro Murakami
IPC分类号： C23C14/35 , H01L21/677 , H01J37/34 , H01L21/285 , H01L23/552 , H01L21/67 , H01L21/3205
CPC分类号： C23C14/35 , C23C14/3407 , C23C14/50 , H01J37/32715 , H01J37/345 , H01L23/552 , H01L2224/04042 , H01L2224/06135 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/73265 , H01L2225/06506 , H01L2225/0651 , H01L2225/06537 , H01L2225/06562 , H01L2924/15311 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： In one embodiment, a semiconductor manufacturing apparatus includes a carrier having first and second ends extending in a first direction, and third and fourth ends extending in a second direction and being not shorter than the first and second ends. The apparatus further includes a member holder having a magnet placement face on which first and second magnetic-pole portions are placed, the magnet placement face having fifth and sixth ends extending in the first direction and being shorter than the first and second ends, and seventh and eighth ends extending in the second direction, being longer than the fifth and sixth ends, and being longer than the third and fourth ends. The apparatus further includes a carrier transporter transporting the carrier along the first direction. The carrier transporter can transport the carrier such that the third and fourth ends pass under a center line of the magnet placement face.
摘要翻译：在一个实施例中，半导体制造装置包括具有在第一方向上延伸的第一和第二端以及沿第二方向延伸并且不短于第一端和第二端的第三端和第四端的载体。该装置还包括具有放置第一和第二磁极部分的磁体放置面的构件保持器，磁体放置面具有沿第一方向延伸并且比第一和第二端短的第五和第六端，并且第七端第八端部沿第二方向延伸，比第五和第六端部长，并且比第三端部和第四端部长。该装置还包括沿着第一方向传送载体的载体输送器。载体运送器可以运送托架，使得第三和第四端在磁体放置面的中心线的下方通过。

65. 发明申请

US20160237550A1 SPUTTERING DEVICE AND MAINTENANCE METHOD FOR SPUTTERING DEVICE 有权
标题翻译：溅射装置和喷射装置的维护方法
公开(公告)号：US20160237550A1
公开(公告)日：2016-08-18
申请号：US15026202
申请日：2014-10-10
申请人： NITTO DENKO CORPORATION
发明人： Tomotake NASHIKI , Akira HAMADA
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , C23C14/3464 , C23C14/562
摘要： A maintenance method for a sputtering device includes the steps of: moving a cathode carriage to take a plurality of targets and a plurality of cathodes out of a vacuum chamber; operating a plurality of cathode rotating apparatuses to rotate the targets and the cathodes so as to cause the targets to face upwards; operating a plurality of cathode sliding apparatuses to move the targets and the cathodes located in places at high height to places at low height; removing the targets from the cathodes to attach a plurality of new targets to the cathodes; returning the targets and the cathodes to an original height thereof; returning the targets and the cathodes to original rotation angles; and putting the targets and the cathodes back into the vacuum chamber.
摘要翻译：溅射装置的维护方法包括以下步骤：移动阴极托架以将多个靶和多个阴极从真空室中取出; 操作多个阴极旋转装置以使目标和阴极旋转，以使目标朝上; 操作多个阴极滑动装置将位于高高度的位置的靶和阴极移动到低高度的位置; 从阴极去除目标以将多个新目标附着到阴极; 将目标和阴极返回到其原始高度; 将目标和阴极返回到原始旋转角度; 并将目标和阴极放回真空室。

66. 发明授权

US09396830B2 Zinc oxide sintered compact, sputtering target, and zinc oxide thin film 有权
标题翻译：氧化锌烧结体，溅射靶和氧化锌薄膜
公开(公告)号：US09396830B2
公开(公告)日：2016-07-19
申请号：US13879506
申请日：2011-11-25
申请人： Masami Mesuda , Hideto Kuramochi , Hitoshi Iigusa , Kenji Omi , Tetsuo Shibutami
发明人： Masami Mesuda , Hideto Kuramochi , Hitoshi Iigusa , Kenji Omi , Tetsuo Shibutami
IPC分类号： H01B1/08 , C04B35/00 , C04B35/453 , C04B35/645 , H01L21/02 , C23C14/34 , C04B37/02 , C23C14/08
CPC分类号： H01B1/08 , C04B35/453 , C04B35/645 , C04B37/026 , C04B2235/3244 , C04B2235/3246 , C04B2235/3284 , C04B2235/404 , C04B2235/5409 , C04B2235/5445 , C04B2235/604 , C04B2235/608 , C04B2235/6562 , C04B2235/6565 , C04B2235/6586 , C04B2235/725 , C04B2235/77 , C04B2235/786 , C04B2237/12 , C04B2237/34 , C04B2237/407 , C23C14/086 , C23C14/3407 , C23C14/3414 , H01L21/02554 , H01L21/02581 , H01L21/02631
摘要： There is provided a zinc oxide sintered compact with a zirconium content of 10 to 1000 ppm, and a sputtering target containing the zinc oxide sintered compact. There is also provided a zinc oxide thin-film having a zirconium content of 10 to 2000 ppm and a resistivity of 10 Ω·cm or greater.
摘要翻译：提供锆含量为10〜1000ppm的氧化锌烧结体和含有氧化锌烧结体的溅射靶。还提供了锆含量为10〜2000ppm，电阻率为10Ω·cm·cm以上的氧化锌薄膜。

67. 发明授权

US09373485B2 Apparatus and method for improved darkspace gap design in RF sputtering chamber 有权
公开(公告)号：US09373485B2
公开(公告)日：2016-06-21
申请号：US14618416
申请日：2015-02-10
申请人： Applied Materials, Inc.
发明人： John C. Forster , Xianmin Tang
IPC分类号： B23K31/02 , H01J37/34 , C23C14/34 , B23K1/00
CPC分类号： H01J37/3491 , B23K1/0008 , B23K31/02 , C23C14/3407 , H01J37/3435 , H01J37/3441 , H01J2237/332 , Y10T29/49826 , Y10T29/49947
摘要： Improved designs of target assemblies and darkspace shields are disclosed. Methods of improving darkspace gap in sputtering chambers and sputtering chambers having an improved darkspace gap are also disclosed. Disclosed is a target assembly having a substantially coplanar backing plate and a target are vertically spaced from the darkspace shield.

68. 发明授权

US09368330B2 Sputtering targets and methods 有权
标题翻译：溅射目标和方法
公开(公告)号：US09368330B2
公开(公告)日：2016-06-14
申请号：US14268212
申请日：2014-05-02
申请人： BH5773 LTD
发明人： Gennady Yumshtyk
IPC分类号： C23C14/35 , H01J37/34
CPC分类号： H01J37/3423 , C23C14/3407 , C23C14/35 , H01J37/32394 , H01J37/3402 , H01J37/3429
摘要： Multi-component sputtering target structures suitable for deposition of metallic alloy films are provided. The multi-component target may be formed by winding wires of different materials around a target support structure to form a dense winding. The sputtering target structures and methods of the invention can be used to produce a variety of refractory metal alloy films.
摘要翻译：提供了适合沉积金属合金膜的多组分溅射靶结构。多组分靶可以通过将不同材料的绕组围绕目标支撑结构缠绕以形成致密的绕组而形成。本发明的溅射靶结构和方法可用于生产各种难熔金属合金膜。

69. 发明申请

US20160149133A1 DEPOSITION MASK AND METHOD OF FABRICATING THE SAME 有权
标题翻译：沉积掩模及其制造方法
公开(公告)号：US20160149133A1
公开(公告)日：2016-05-26
申请号：US14706691
申请日：2015-05-07
申请人： Samsung Display Co., Ltd.
发明人： Yongtack Kim , Jongwoo Kim , Jiyoung Moon , Minho Oh , Yoonhyeung Cho
IPC分类号： H01L51/00 , C23C14/34 , C23C14/58 , C23C14/14 , C23C16/04 , C23C14/35 , C23C14/08
CPC分类号： C23C14/58 , C23C14/042 , C23C14/3407 , C23C14/3485 , C23C14/352 , C23C16/042 , H01J37/32623
摘要： A deposition mask comprises a mask body comprising a plurality of through holes; and a deposition layer formed on external surfaces of the mask body. A method of manufacturing a deposition mask comprises: installing a deposition mask body in a chamber; forming a magnetic field between a plurality of magnet units within the chamber, wherein the deposition mask body is disposed between the magnet units; and applying voltages to first and second sputtering targets comprising a material to generate electric discharge such that particles of the material are sputtered from the first and second sputtering targets and deposited on the deposition mask body, thereby making a deposition mask with a layer of the material. The voltages having different magnitudes are applied to the first and second sputtering targets.
摘要翻译：沉积掩模包括：掩模体，其包括多个通孔; 以及形成在面罩主体的外表面上的沉积层。制造沉积掩模的方法包括：将沉积掩模体安装在腔室中; 在所述室内的多个磁体单元之间形成磁场，其中所述沉积掩模体设置在所述磁体单元之间; 以及向包括材料的第一和第二溅射靶施加电压以产生放电，使得所述材料的颗粒从所述第一和第二溅射靶溅射并沉积在所述沉积掩模体上，从而制备具有所述材料层的沉积掩模。具有不同幅度的电压被施加到第一和第二溅射靶。

70. 发明授权

US09334557B2 Method for sputter targets for electrolyte films 有权
标题翻译：电解质膜溅射靶的方法
公开(公告)号：US09334557B2
公开(公告)日：2016-05-10
申请号：US12339361
申请日：2008-12-19
申请人： Bernd J. Neudecker , Jay F. Whitacre
发明人： Bernd J. Neudecker , Jay F. Whitacre
IPC分类号： C23C14/38 , C23C14/06 , C23C14/00 , C23C14/22 , C23C14/34 , C23C14/35 , H01M2/14 , H01M6/18 , H01M6/40 , H01M10/0525 , H01M10/0562 , H01M10/058
CPC分类号： C23C14/06 , C23C14/0036 , C23C14/22 , C23C14/3407 , C23C14/3414 , C23C14/352 , H01M2/145 , H01M6/188 , H01M6/40 , H01M10/0525 , H01M10/0562 , H01M10/058 , Y02E60/122 , Y02P70/54
摘要： Alternative sputter target compositions or configurations for thin-film electrolytes are proposed whereby the sputter target materials system possesses sufficient electrical conductivity to allow the use of (pulsed) DC target power for sputter deposition. The electrolyte film materials adopt their required electrically insulating and lithium-ion conductive properties after reactive sputter deposition from the electrically conducting sputter target materials system.
摘要翻译：提出了用于薄膜电解质的替代溅射靶组合物或构造，由此溅射靶材料系统具有足够的电导率，以允许使用（脉冲）DC靶电力进行溅射沉积。电解质膜材料在从导电溅射靶材料系统反应溅射沉积之后采用其所需的电绝缘和锂离子传导性能。

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