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1. 发明授权

US10083823B2 Sputtering target and manufacturing method thereof, and transistor 有权
公开(公告)号：US10083823B2
公开(公告)日：2018-09-25
申请号：US14578603
申请日：2014-12-22
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei Yamazaki , Toru Takayama , Keiji Sato
IPC分类号： H01J37/34 , C04B35/01 , C04B35/453 , C04B35/645 , C04B41/00 , C04B41/80 , C23C14/10 , C23C14/34 , C23C14/56 , H01L21/02 , H01L29/417 , H01L29/423 , H01L29/45 , H01L29/786 , B29C31/00 , H01L29/66 , C04B111/00
CPC分类号： H01J37/3429 , B29C31/008 , C04B35/01 , C04B35/453 , C04B35/645 , C04B35/6455 , C04B41/0072 , C04B41/009 , C04B41/80 , C04B2111/00844 , C04B2235/3284 , C04B2235/3286 , C04B2235/3418 , C04B2235/658 , C04B2235/662 , C04B2235/666 , C04B2235/77 , C23C14/10 , C23C14/3414 , C23C14/564 , H01J2237/332 , H01L21/0242 , H01L21/02422 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/41733 , H01L29/42384 , H01L29/45 , H01L29/66742 , H01L29/66969 , H01L29/78618 , H01L29/7869 , C04B35/04 , C04B35/10 , C04B35/457 , C04B41/4517 , C04B41/53
摘要： One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

2. 发明申请

US20180265417A1 SUSCEPTOR MATERIALS FOR 3D PRINTING USING MICROWAVE PROCESSING 审中-公开
公开(公告)号：US20180265417A1
公开(公告)日：2018-09-20
申请号：US15542624
申请日：2015-01-23
申请人： Hewlett-Packard Development Company, L.P.
发明人： David A Champion , James Elmer Abbott, JR.
IPC分类号： C04B35/626 , C04B35/505 , C04B35/111 , C04B35/565 , C04B35/628 , H05B6/64
CPC分类号： C04B35/62655 , B28B1/001 , B29C64/165 , B33Y70/00 , C04B35/01 , C04B35/111 , C04B35/117 , C04B35/14 , C04B35/443 , C04B35/45 , C04B35/457 , C04B35/46 , C04B35/468 , C04B35/486 , C04B35/488 , C04B35/495 , C04B35/505 , C04B35/553 , C04B35/565 , C04B35/583 , C04B35/584 , C04B35/62813 , C04B35/62815 , C04B35/62839 , C04B2235/3208 , C04B2235/3239 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3287 , C04B2235/3291 , C04B2235/36 , C04B2235/424 , C04B2235/6026 , C04B2235/667 , C04B2235/80 , H05B6/64
摘要： A 3D printing system includes a build material and an ink for patterning portions of the build material. The printing system further includes two or more susceptors, a first susceptor and a second susceptor. The first susceptor causes heating when exposed to microwave radiation at a first temperature. The second susceptor causes heating when exposed to microwave radiation at a second temperature. The first susceptor material is decomposable or oxidizable at a third temperature that is higher than the second temperature. The second susceptor is transparent to microwave radiation at the first temperature.

3. 发明申请

US20180148643A1 FINE FLUORESCENT-MATERIAL PARTICLES, PROCESS FOR PRODUCING FINE FLUORESCENT-MATERIAL PARTICLES, THIN FLUORESCENT-MATERIAL FILM, WAVELENGTH CONVERSION FILM, WAVELENGTH CONVERSION DEVICE, AND SOLAR CELL 审中-公开
公开(公告)号：US20180148643A1
公开(公告)日：2018-05-31
申请号：US15884643
申请日：2018-01-31
申请人： NGK Insulators, Ltd.
发明人： Tatsuya Hishiki
IPC分类号： C09K11/66 , H01L31/055
CPC分类号： C09K11/663 , C01G19/00 , C01G19/006 , C01P2002/34 , C01P2002/54 , C01P2002/72 , C01P2004/04 , C01P2004/64 , C04B35/453 , C04B35/457 , C04B2235/3215 , C04B2235/3284 , C04B2235/768 , C09K11/55 , C09K11/66 , H01L31/055 , Y02E10/52
摘要： A luminescent substance particle includes BaSnO3:Zn having a perovskite-type structure, a content of Zn (zinc) being more than 0.0% by mass and less than 8.0% by mass. Alternatively, a luminescent substance particle includes BaSnO3:Mg having a perovskite-type structure, a content of Mg (magnesium) being more than 0.0% by mass and less than 0.1% by mass.

4. 发明授权

US09758856B2 (Ga) Zn Sn oxide sputtering target 有权
公开(公告)号：US09758856B2
公开(公告)日：2017-09-12
申请号：US14765873
申请日：2014-02-04
申请人： SOLERAS ADVANCED COATINGS BVBA
发明人： Jorg Oberste Berghaus , Wilmert De Bosscher
IPC分类号： C23C14/00 , C23C14/08 , C04B35/453 , C04B35/457 , C04B37/02 , C23C14/34 , H01J37/34
CPC分类号： C23C14/086 , C04B35/453 , C04B35/457 , C04B37/026 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/77 , C04B2235/95 , C04B2237/124 , C04B2237/34 , C04B2237/40 , C23C14/34 , C23C14/3414 , H01J37/3423 , H01J37/3429 , H01J2237/3322
摘要： A sputtering target having a one-piece top coat comprising a mixture of oxides of zinc, tin, and optionally gallium, characterized in that said one-piece top coat has a length of at least 80 cm; a method for forming such a sputtering target and the use of such a target for forming films.

5. 发明授权

US09340461B1 Method of making controlled morphology metal-oxides 有权
标题翻译：制作受控形态金属氧化物的方法
公开(公告)号：US09340461B1
公开(公告)日：2016-05-17
申请号：US14551460
申请日：2014-11-24
申请人： UT-Battelle, LLC
发明人： Soydan Ozcan , Yuan Lu
IPC分类号： H01L21/02 , H01L29/06 , H01L29/26 , C04B35/622 , C04B35/64
CPC分类号： C04B35/62218 , C04B35/01 , C04B35/26 , C04B35/457 , C04B35/46 , C04B35/62231 , C04B35/62259 , C04B35/653 , C04B35/803 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/444 , C04B2235/5212 , C04B2235/5248 , C04B2235/5264
摘要： A method of making metal oxides having a preselected morphology includes preparing a suspension that includes a solvent, polymeric nanostructures having multiplicities of hydroxyl surface groups and/or carboxyl surface groups, and a metal oxide precursor. The suspension has a preselected ratio of the polymeric nanostructures to the metal oxide precursor of at least 1:3, the preselected ratio corresponding to a preselected morphology. Subsequent steps include depositing the suspension onto a substrate, removing the solvent to form a film, removing the film from the substrate, and annealing the film to volatilize the polymeric nanostructures and convert the metal oxide precursor to metal oxide nanoparticles having the preselected morphology or to a metal oxide nanosheet including conjoined nanoparticles having the preselected morphology.
摘要翻译：制备具有预选形态的金属氧化物的方法包括制备包括溶剂的悬浮液，具有多个羟基表面基团和/或羧基表面基团的聚合物纳米结构和金属氧化物前体。悬浮液具有至少1:3的聚合物纳米结构与金属氧化物前体的预选比例，预选比例对应于预选的形态。随后的步骤包括将悬浮液沉积到基底上，除去溶剂以形成膜，从基底去除膜，并退火膜以使聚合物纳米结构挥发并将金属氧化物前体转化为具有预选形态的金属氧化物纳米颗粒或将包括具有预选形态的结合纳米颗粒的金属氧化物纳米片。

6. 发明授权

US09178073B2 Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor 有权
标题翻译：用于薄膜晶体管，溅射靶和薄膜晶体管的半导体层的氧化物
公开(公告)号：US09178073B2
公开(公告)日：2015-11-03
申请号：US13989944
申请日：2011-11-28
申请人： Aya Miki , Shinya Morita , Toshihiro Kugimiya , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
发明人： Aya Miki , Shinya Morita , Toshihiro Kugimiya , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
IPC分类号： H01L29/786 , C01G19/00 , C23C14/08 , C23C14/34 , H01L21/02 , C04B35/453 , C23C14/54 , C23C14/58 , C04B35/01 , C04B35/457 , H01L27/12
CPC分类号： H01L29/7869 , C01G19/006 , C01P2006/10 , C04B35/01 , C04B35/453 , C04B35/457 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C23C14/086 , C23C14/3407 , C23C14/548 , C23C14/5806 , C23C14/5873 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/78693
摘要： This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2) [In]/([In]+[Zn]+[Sn])≦1.1×[Zn]/([Zn]+[Sn])−0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.
摘要翻译：用于薄膜晶体管的半导体层的氧化物含有Zn，Sn和In，并且当表示为[Zn]时，包含在氧化物中的金属元素的含量（at％）满足式（1）至（3） [Sn]和[In]。 [In] /（[In] + [Zn] + [Sn]）≥-0.53×[Zn] /（[Zn] + [Sn]）+0.36（1）[In] /（[In] ] + [Sn]）≥2.28×[Zn] /（[Zn] + [Sn]）-2.01（2）[In] /（[In] + [Zn] + [Sn]）＆ ] /（[Zn] + [Sn]） - 0.32（3）本发明能够提供实现高迁移率并具有优异的应力阻力（施加应力之前和之后的阈值电压偏移可忽略）的薄膜晶体管氧化物。

7. 发明授权

US09162286B2 Glass substrate film sputtering target and preparing method thereof 有权
标题翻译：玻璃基片薄膜溅射靶及其制备方法
公开(公告)号：US09162286B2
公开(公告)日：2015-10-20
申请号：US13380861
申请日：2011-12-12
申请人： Hao Kou
发明人： Hao Kou
IPC分类号： B22F3/14 , C23C14/34 , C22C30/02 , B22F1/00 , C04B35/457 , B82Y30/00
CPC分类号： B22F3/14 , B22F1/0018 , B22F2999/00 , B82Y30/00 , C04B35/457 , C04B2235/3286 , C04B2235/6567 , C04B2235/77 , C22C30/02 , C23C14/3414 , B22F2202/13
摘要： A preparing method of a glass substrate film sputtering target is disclosed, which comprises the following steps of: weighing an alloy material for forming the glass substrate film sputtering target; adding the alloy material weighed into a plasma pressure compaction sintering cavity and sintering the alloy material to obtain a sintered target, wherein the sintering temperature is 500° C.˜1600° C. and the sintering time is 5˜20 minutes; and post-processing the sintered target. A glass substrate film sputtering target prepared by the preparing method is further disclosed. Because the plasma pressure compaction for quick sintering is adopted for the glass substrate film sputtering target and the preparing method thereof of the present disclosure, quality of the target can be improved and the time necessary for preparing the target can be shortened.
摘要翻译：公开了一种玻璃基板薄膜溅射靶的制备方法，包括以下步骤：称量用于形成玻璃基片薄膜溅射靶的合金材料; 将称重的合金材料加入到等离子体压制烧结腔中，烧结合金材料，得到烧结靶，烧结温度为500℃〜1600℃，烧结时间为5〜20分钟; 并对烧结靶进行后处理。进一步公开了通过该制备方法制备的玻璃基底膜溅射靶。由于玻璃基板膜溅射靶的采用等离子体压力快速烧结及其本公开的制备方法，因此能够提高靶的质量，缩短制备靶材所需的时间。

8. 发明申请

US20150136594A1 SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF, AND TRANSISTOR 审中-公开
标题翻译：溅射靶及其制造方法和晶体管
公开(公告)号：US20150136594A1
公开(公告)日：2015-05-21
申请号：US14578603
申请日：2014-12-22
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei Yamazaki , Toru Takayama , Keiji Sato
IPC分类号： H01J37/34 , H01L29/786 , H01L21/02
CPC分类号： H01J37/3429 , B29C31/008 , C04B35/01 , C04B35/453 , C04B35/645 , C04B35/6455 , C04B41/0072 , C04B41/009 , C04B41/80 , C04B2111/00844 , C04B2235/3284 , C04B2235/3286 , C04B2235/3418 , C04B2235/658 , C04B2235/662 , C04B2235/666 , C04B2235/77 , C23C14/10 , C23C14/3414 , C23C14/564 , H01J2237/332 , H01L21/0242 , H01L21/02422 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/41733 , H01L29/42384 , H01L29/45 , H01L29/66742 , H01L29/66969 , H01L29/78618 , H01L29/7869 , C04B35/04 , C04B35/10 , C04B35/457 , C04B41/4517 , C04B41/53
摘要： One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.
摘要翻译：一个目的是提供一种用于形成氧化物半导体膜的沉积技术。通过使用包含含氢浓度低的金属氧化物的烧结体（例如低于1×1016原子/ cm3）的溅射靶形成氧化物半导体膜，氧化物半导体膜含有少量的杂质如含有以H 2 O或氢原子为代表的氢的化合物。此外，该氧化物半导体膜用作晶体管的有源层。

9. 发明授权

US09034526B2 Garnet-type solid electrolyte, secondary battery containing garnet-type solid electrolyte, and method of producing garnet-type solid electrolyte 有权
标题翻译：石榴石型固体电解质，含有石榴石型固体电解质的二次电池，以及石榴石型固体电解质的制造方法
公开(公告)号：US09034526B2
公开(公告)日：2015-05-19
申请号：US13984656
申请日：2012-02-23
申请人： Katsuya Teshima , Masato Hozumi
发明人： Katsuya Teshima , Masato Hozumi
IPC分类号： H01M10/0562 , C01G19/00 , C01G25/00 , C01G27/00 , C01G29/00 , C01G30/00 , C01G33/00 , C01G35/00 , C04B35/01 , C04B35/453 , C04B35/457 , C04B35/486 , C04B35/495 , H01M10/052
CPC分类号： H01M10/0562 , C01G19/006 , C01G25/006 , C01G27/006 , C01G29/006 , C01G30/002 , C01G33/006 , C01G35/006 , C01P2002/52 , C01P2002/72 , C01P2004/03 , C01P2006/40 , C04B35/01 , C04B35/453 , C04B35/457 , C04B35/486 , C04B35/495 , C04B2235/3201 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3227 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/326 , C04B2235/3294 , C04B2235/3298 , C04B2235/444 , C04B2235/764 , H01M10/052 , Y02E60/122
摘要： A garnet-type solid electrolyte contains a crystal having (110) face, (1-10) face, (112) face, (1-12) face, and (11-2) face, the garnet-type solid electrolyte being Li7La3Zr2O12. A battery includes a solid electrolyte interposed between a positive and a negative electrode, the solid electrolyte being the garnet-type solid electrolyte. A method of producing a garnet-type solid electrolyte represented by a composition formula Li7La3Zr2O12 and has (110) face, (1-10) face, (112) face, (1-12) face, and (11-2) face as a crystal face, including a step of preparing a lithium-containing compound, a lanthanum-containing compound, and a zirconium-containing compound; a step of mixing these compounds such that a molar ratio among the elements satisfies Li:La:Zr=a:b:c (where a is from 120 to 160, b is from 1 to 5, and c is from 1 to 5); and a step of heating the mixture between 400 and 1,200° C.
摘要翻译：石榴石型固体电解质含有（110）面，（1-10）面，（112）面，（1-12）面和（11-2）面，石榴石型固体电解质为Li7La3Zr2O12 。电池包括置于正极和负极之间的固体电解质，固体电解质是石榴石型固体电解质。由组成式Li7La3Zr2O12表示的具有（110）面，（1-10）面，（112）面，（1-12）面和（11-2）面的石榴石型固体电解质的制造方法，（11-2）包括制备含锂化合物，含镧化合物和含锆化合物的步骤; 混合这些化合物使得元素中的摩尔比满足Li：La：Zr = a:b:c（其中a为120至160，b为1至5，c为1至5）的步骤， ; 以及在400和1200℃之间加热混合物的步骤。

10. 发明授权

US08877096B2 Near infrared doped phosphors having a zinc, germanium, gallate matrix 有权
标题翻译：具有锌，锗，没食子酸酯基质的近红外掺杂磷光体
公开(公告)号：US08877096B2
公开(公告)日：2014-11-04
申请号：US13394627
申请日：2010-09-21
申请人： Zhengwei Pan , Yi-Ying Lu
发明人： Zhengwei Pan , Yi-Ying Lu
IPC分类号： C09K11/66 , C09K11/08 , H01L33/00 , C09K11/68 , C04B35/01 , C04B35/16 , C04B35/457 , C09D5/22 , C09K11/62 , H01L33/50
CPC分类号： C09K11/662 , C04B35/01 , C04B35/16 , C04B35/457 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3241 , C04B2235/3279 , C04B2235/3284 , C04B2235/3286 , C04B2235/3287 , C04B2235/3298 , C09D5/22 , C09K11/623 , C09K11/682 , C09K11/685 , H01L33/502
摘要： Phosphors based on transition metal-activated gallates, particularly Cr3+- and Ni2+-activated zinc germanium gallates, are disclosed herein. In some embodiments such phosphors can exhibit persistent infrared phosphorescence for as long as 400 hours. Such phosphors can be used, for example, as components of a luminescent paint.
摘要翻译：基于过渡金属活化的没食子酸酯，特别是Cr 3+和Ni 2+激活的没食子酸镓锗的磷光体在本文中公开。在一些实施方案中，这样的荧光体可以持续长达400小时的持续红外磷光。这样的荧光体可以用作例如发光涂料的组分。

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