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61. 发明申请

US20120302864A1 SUBJECT INFORMATION ACQUISITION APPARATUS 审中-公开
标题翻译：主体信息获取装置
公开(公告)号：US20120302864A1
公开(公告)日：2012-11-29
申请号：US13570997
申请日：2012-08-09
申请人： Haruo Yoda
发明人： Haruo Yoda
IPC分类号： A61B6/00
CPC分类号： A61B8/08 , A61B5/0059 , A61B5/0095 , A61B8/4483 , G01N21/1702 , G01N29/2418 , G01S7/52085
摘要： A subject information acquisition apparatus includes an electromechanical conversion element which receives an elastic wave generated by irradiating with an electromagnetic wave an object in a subject and converts the received elastic wave into an electric signal; a moving device moves the electromechanical conversion element; a signal processing device calculates an image value based on the electric signal. The moving device moves the electromechanical conversion element from a first position to a second position, the electromechanical conversion element receives the elastic wave at the first position and converts the received elastic wave into a first electric signal, and receives the elastic wave at the second position and converts the received elastic wave into a second electric signal; when the electromechanical conversion element is situated at the second position, the signal processing device calculates a first image value at a specified position inside the subject based on the first electric signal.
摘要翻译：主题信息获取装置包括：机电转换元件，其接收通过用对象物体的电磁波照射产生的弹性波，并将接收的弹性波转换为电信号; 移动装置移动机电转换元件; 信号处理装置基于电信号计算图像值。移动装置将机电转换元件从第一位置移动到第二位置，机电转换元件在第一位置接收弹性波，并将接收到的弹性波变换为第一电信号，并在第二位置接收弹性波并将接收的弹性波转换成第二电信号; 当机电转换元件位于第二位置时，信号处理装置基于第一电信号计算被摄体内的指定位置处的第一图像值。

62. 发明申请

US20110098550A1 PHOTOACOUSTIC IMAGING APPARATUS 有权
标题翻译：摄影成像设备
公开(公告)号：US20110098550A1
公开(公告)日：2011-04-28
申请号：US12999302
申请日：2009-06-11
申请人： Haruo Yoda
发明人： Haruo Yoda
IPC分类号： A61B8/08
CPC分类号： A61B8/08 , A61B5/0059 , A61B5/0095 , A61B8/4483 , G01N21/1702 , G01N29/2418 , G01S7/52085
摘要： A bioinformation acquisition apparatus to input a signal having uniform sensitivity and a high SN ratio at a high speed is provided. It includes a moving device moving an element group into the arrangement direction of the elements, and moves the element group situated at a first position at first time point to be situated at a second position at second time point. The element group receives an elastic wave emitted from a test object at the first time point at the first position, and the elastic wave from the test object at the second time point at the second position. The electric signal of a specified position of a test body from a first element of the elastic waves received at the first time point and the electric signal of the specified position from a second element received at the second time point are added to each other.
摘要翻译：提供了一种用于以高速度输入具有均匀灵敏度和高SN比的信号的生物信息获取装置。其包括将元件组移动到元件的排列方向的移动装置，并且将位于第一时间点的第一位置处的元件组移动到位于第二时间点的第二位置。元件组在第一位置处的第一时间点接收从测试对象发射的弹性波，并且在第二时间点接收来自测试对象的弹性波在第二位置。来自第一时间点接收到的弹性波的第一元素的测试体的指定位置的电信号和在第二时间点接收到的来自第二元素的指定位置的电信号彼此相加。

63. 发明授权

US07417444B2 Method and apparatus for inspecting integrated circuit pattern 失效
标题翻译：检查集成电路图案的方法和装置
公开(公告)号：US07417444B2
公开(公告)日：2008-08-26
申请号：US11269617
申请日：2005-11-09
申请人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
IPC分类号： G01R31/305 , H01J37/28
CPC分类号： G01R31/305 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
摘要翻译：一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射，在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

64. 发明申请

US20070057200A1 Electron beam apparatus and method of generating an electron beam irradiation pattern 有权
标题翻译：电子束装置和产生电子束照射图案的方法
公开(公告)号：US20070057200A1
公开(公告)日：2007-03-15
申请号：US11519872
申请日：2006-09-13
申请人： Ryo Fujita , Haruo Yoda , Kimiaki Ando , Yuji Inoue , Masato Muraki
发明人： Ryo Fujita , Haruo Yoda , Kimiaki Ando , Yuji Inoue , Masato Muraki
IPC分类号： G21G5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/31762 , H01J2237/31769
摘要： High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.
摘要翻译：通过使用小剂量的电子束进行高对比度曝光，以高精度在晶片上形成图案，进行高精度检查。在图案形成中，执行邻近效应校正处理。此外，基于使用电子束的曝光特性的逆特性的滤波结果来执行电子束的曝光。此外，在图案检查中，基于滤波结果照射电子束，以获得形成的图案的边缘的周边区域。

65. 发明授权

US07026830B2 Method and apparatus for inspecting integrated circuit pattern 失效
标题翻译：检查集成电路图案的方法和装置
公开(公告)号：US07026830B2
公开(公告)日：2006-04-11
申请号：US10379555
申请日：2003-03-06
申请人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
IPC分类号： G01R31/305 , G01R31/28
CPC分类号： G01R31/305 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： To make possible the in-line inspection of a pattern of an insulating material.A patterned wafer 40 formed with a pattern by a resist film is placed on a specimen table 21 of a patterned wafer inspection apparatus 1 in opposed relation to a SEM 3. An electron beam 10 of a large current is emitted from an electron gun 11 and the pattern of the patterned wafer is scanned only once at a high scanning rate. The secondary electrons generated by this scanning from the patterned wafer are detected by a secondary electron detector 16 thereby to acquire an electron beam image. Using this electron beam image, the comparative inspection is conducted on the patterned wafer through an arithmetic operation unit 32 and a defect determining unit 33. Since an electron beam image of high contrast can be obtained by scanning an electron beam only once, a patterned wafer inspection method using a SEM can be implemented in the IC fabrication method.
摘要翻译：使绝缘材料的图案能够在线检查。通过抗蚀剂膜形成图案的图案化晶片40与SEM 3相对地放置在图案化晶片检查装置1的样本台21上。从电子枪11发射大电流的电子束10，以高扫描速度扫描图案化晶片的图案一次。通过二次电子检测器16检测来自图案化晶片的该扫描产生的二次电子，从而获得电子束图像。使用该电子束图像，通过算术运算单元32和缺陷判定单元33对图案化晶片进行比较检查。由于可以通过仅扫描电子束一次来获得高对比度的电子束图像，因此图案化晶片使用SEM的检查方法可以在IC制造方法中实现。

66. 发明申请

US20060043982A1 Method and apparatus for inspecting integrated circuit pattern 失效
标题翻译：检查集成电路图案的方法和装置
公开(公告)号：US20060043982A1
公开(公告)日：2006-03-02
申请号：US11269617
申请日：2005-11-09
申请人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
IPC分类号： G01R31/305
CPC分类号： G01R31/305 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
摘要翻译：一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射，在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

67. 发明申请

US20050285054A1 Charged particle beam drawing apparatus 有权
标题翻译：带电粒子束拉制装置
公开(公告)号：US20050285054A1
公开(公告)日：2005-12-29
申请号：US11136703
申请日：2005-05-25
申请人： Yuji Inoue , Haruo Yoda , Kimiaki Ando , Yoshikiyo Yui
发明人： Yuji Inoue , Haruo Yoda , Kimiaki Ando , Yoshikiyo Yui
IPC分类号： H01L21/027 , G21K1/08 , G21K5/10 , H01J37/302
CPC分类号： H01J37/3026 , B82Y10/00 , B82Y40/00 , G21K1/08 , H01J37/3174 , H01J2237/31762
摘要： In the present invention, vector data developing unit, ends separating unit, overlap removing unit and bitmapped data generating unit are sequentially connected in order to make pipeline processing. In addition, data of each raster is orderly arranged as a unit so that each processor can process data of each raster at a time. Each processor can make the pipeline processing to fast generate data. In addition, small-scale circuits can be used to realize the system because each raster can be processed as a unit of processing. Moreover, since data is orderly arranged before being processed, multi-valued bitmapped data can be generated in the order of drawing. Therefore, the drawing operation and data generating operation can be performed in parallel without use of any large-scale storage device.
摘要翻译：在本发明中，为了进行流水线处理，顺序地连接矢量数据显影单元，端部分离单元，重叠移除单元和位图数据生成单元。此外，每个光栅的数据被有序地排列成一个单元，使得每个处理器可以一次处理每个光栅的数据。每个处理器可以使流水线处理快速生成数据。此外，可以使用小规模电路来实现系统，因为每个光栅可以作为处理单元被处理。此外，由于在处理之前数据被有序排列，所以可以按照绘制的顺序生成多值位图数据。因此，绘图操作和数据生成操作可以并行执行而不使用任何大型存储设备。

68. 发明申请

US20050072941A1 Method of charged particle beam lithography and equipment for charged particle beam lithography 有权
标题翻译：带电粒子束光刻方法及带电粒子束光刻设备
公开(公告)号：US20050072941A1
公开(公告)日：2005-04-07
申请号：US10958141
申请日：2004-10-05
申请人： Sayaka Tanimoto , Yasunari Sohda , Yoshinori Nakayama , Osamu Kamimura , Haruo Yoda , Masaki Hosoda
发明人： Sayaka Tanimoto , Yasunari Sohda , Yoshinori Nakayama , Osamu Kamimura , Haruo Yoda , Masaki Hosoda
IPC分类号： G21K5/04 , G03F7/20 , H01J37/04 , H01J37/09 , H01J37/305 , H01J37/317 , H01L21/027 , H01J37/302
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/04 , H01J37/317
摘要： Disclosed is equipment for charged-particle beam lithography capable of executing exposure even when an electron beam with a bad property is produced due to a failure in some multibeam forming element, without replacing the failing multibeam forming element and without reducing the exposure accuracy. The equipment includes means for forming a plurality of charged-particle beams arranged at predetermined intervals; a plurality of blankers which act on the plurality of charged-particle beams individually; a common blanker which acts on all of the plurality of charged-particle beams; and a blanking restriction for causing those charged-particle beams which are given predetermined deflection by the plurality of blankers to reach onto a sample, with a signal applied to the common blanker, and blocking those charged-particle beams which are not given the predetermined deflection by the plurality of blankers to the sample. The equipment blocks beams with bad properties to the sample and executes exposure using only those beams which have bad properties.
摘要翻译：本发明公开了即使由于某些多波束形成元件的故障而产生具有不良特性的电子束也能够进行曝光的带电粒子束光刻设备，而不更换故障多波束形成元件而不降低曝光精度。该设备包括用于形成以预定间隔布置的多个带电粒子束的装置; 分别作用在多个带电粒子束上的多个阻挡器; 作用于所有多个带电粒子束的常见消隐器; 以及消隐限制，用于使得由多个消隐器给予预定偏转的那些带电粒子束到达样本，信号施加到公共消隐器，并且阻挡未被给予预定偏转的那些带电粒子束通过多个消隐器到样品。设备阻挡样品性能不良的光束，并仅使用具有不良特性的光束执行曝光。

69. 发明授权

US06870171B2 Exposure apparatus 失效
标题翻译：曝光装置
公开(公告)号：US06870171B2
公开(公告)日：2005-03-22
申请号：US10806190
申请日：2004-03-23
申请人： Masaki Hosoda , Masato Muraki , Hiroya Ohta , Haruo Yoda
发明人： Masaki Hosoda , Masato Muraki , Hiroya Ohta , Haruo Yoda
IPC分类号： G03F7/20 , H01J37/147 , H01J37/317 , H01L21/027 , H01J37/302 , H01J37/04 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/1471 , H01J37/3177 , H01J2237/30455
摘要： An electron beam exposure apparatus which exposes a wafer (118) by using a plurality of electron beams corrects the positional error of the electron beams by using multi-deflector arrays (105, 106) capable of independently deflecting the positions of the electron beams, and pattern data to be projected onto the wafer (118). More specifically, when each of the electron beams is deflected to a predetermined exposure position on the basis of the pattern data, a static positional error independent of the deflection position is corrected by the multi-deflector arrays (105, 106), and a dynamic positional error depending on the deflection position is corrected on the basis of the pattern data.
摘要翻译：通过使用多个电子束使晶片（118）曝光的电子束曝光装置通过使用能够独立地偏转电子束的位置的多偏转阵列（105,106）来校正电子束的位置误差，以及图案数据被投影到晶片（118）上。更具体地说，当基于图案数据将每个电子束偏转到预定曝光位置时，通过多偏转器阵列（105,106）校正与偏转位置无关的静态位置误差，并且动态基于图案数据来校正取决于偏转位置的位置误差。

70. 发明申请

US20050029473A1 Charged particle beam exposure method and apparatus and device manufacturing method using the apparatus 有权
标题翻译：带电粒子束曝光方法及装置及装置的制造方法
公开(公告)号：US20050029473A1
公开(公告)日：2005-02-10
申请号：US10909300
申请日：2004-08-03
申请人： Masato Muraki , Yoshinori Nakayama , Hiroya Ohta , Haruo Yoda , Norio Saitou
发明人： Masato Muraki , Yoshinori Nakayama , Hiroya Ohta , Haruo Yoda , Norio Saitou
IPC分类号： G03F7/20 , H01J37/04 , H01J37/304 , H01J37/305 , H01J37/317 , H01L21/027 , G01K1/08 , H01J3/14
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/317
摘要： A charged particle beam exposure apparatus which exposes a substrate using a plurality of charged particle beams comprises a first measurement member for making the plurality of charged particle beams come incident and measuring a total current value of the charged particle beams, and a second measurement member for making the plurality of charged particle beams come incident and multiplying electrons of each of the incident charged particle beams, thereby measuring a relative value of a current of each of the charged particle beams.
摘要翻译：使用多个带电粒子束曝光基板的带电粒子束曝光装置包括使多个带电粒子束入射的第一测量部件和测量带电粒子束的总电流值，以及第二测量部件，使多个带电粒子束入射并乘以每个入射带电粒子束的电子，从而测量每个带电粒子束的电流的相对值。

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