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    • 62. 发明授权
    • In-situ metalization monitoring using eddy current and optical measurements
    • 使用涡流和光学测量进行原位金属化监测
    • US06707540B1
    • 2004-03-16
    • US09633800
    • 2000-08-07
    • Kurt R. LehmanShing M. LeeWalter Halmer Johnson, IIIJohn FieldenGuoheng ZhaoMehrdad Nikoonahad
    • Kurt R. LehmanShing M. LeeWalter Halmer Johnson, IIIJohn FieldenGuoheng ZhaoMehrdad Nikoonahad
    • G01N2100
    • G01N27/72
    • Disclosed is a chemical mechanical polishing (CMP) system for polishing a sample with a polishing agent and monitoring the sample. The CMP system includes a polishing table, a sample carrier arranged to hold the sample over the polishing table, and an eddy probe. The polishing table and sample carrier are arranged to receive a polishing agent between the sample and the polishing table and to polish the sample by moving the polishing table and the sample carrier relative to each other. The eddy probe is arranged to be operable to obtain a measurement of the sample while the sample is being polished. The CMP system further includes an optical measurement device arranged to be operable to obtain a measurement of the sample while the sample is being polished. The CMP system also has a memory and a processor coupled with the memory. The processor and memory are adapted for operating the eddy probe and optical measurement device.
    • 公开了一种用抛光剂抛光样品并监测样品的化学机械抛光(CMP)系统。 CMP系统包括抛光台,布置成将样品保持在抛光台上的样品载体和涡流探针。 抛光台和样品载体布置成在样品和抛光台之间接收抛光剂,并通过相对于彼此移动抛光台和样品载体来抛光样品。 涡流探针布置成可操作以在样品被抛光时获得样品的测量。 CMP系统还包括光学测量装置,其布置成可操作以在样品被抛光时获得样品的测量。 CMP系统还具有与存储器耦合的存储器和处理器。 处理器和存储器适于操作涡流探针和光学测量装置。
    • 68. 发明授权
    • Wafer inspection
    • 晶圆检查
    • US08891079B2
    • 2014-11-18
    • US13822281
    • 2011-12-07
    • Guoheng ZhaoJenn-Kuen LeongMehdi Vaez-Iravani
    • Guoheng ZhaoJenn-Kuen LeongMehdi Vaez-Iravani
    • G01N21/00G01J4/00G01N21/88G01N21/95H01L21/66
    • G01N21/9501G01N21/21G01N21/47G01N21/8806G01N2201/06113H01L22/12H01L2924/0002H01L2924/00
    • Systems and methods for inspecting a wafer are provided. One system includes an illumination subsystem configured to illuminate the wafer; a collection subsystem configured to collect light scattered from the wafer and to preserve the polarization of the scattered light; an optical element configured to separate the scattered light collected in different segments of the collection numerical aperture of the collection subsystem, where the optical element is positioned at a Fourier plane or a conjugate of the Fourier plane of the collection subsystem; a polarizing element configured to separate the scattered light in one of the different segments into different portions of the scattered light based on polarization; and a detector configured to detect one of the different portions of the scattered light and to generate output responsive to the detected light, which is used to detect defects on the wafer.
    • 提供了用于检查晶片的系统和方法。 一个系统包括配置成照亮晶片的照明子系统; 收集子系统,被配置为收集从晶片散射的光并保持散射光的偏振; 光学元件,被配置为将收集在收集子系统的收集数值孔径的不同段中的散射光分离,其中所述光学元件位于所述收集子系统的傅立叶平面或所述傅立叶平面的共轭处; 偏振元件,被配置为基于极化将所述不同段中的一个中的散射光分离成所述散射光的不同部分; 以及检测器,被配置为检测散射光的不同部分中的一个,并且响应于检测到的光而产生输出,所述检测光用于检测晶片上的缺陷。
    • 69. 发明授权
    • In-situ differential spectroscopy
    • 原位差分光谱
    • US08283631B2
    • 2012-10-09
    • US12351215
    • 2009-01-09
    • Mehdi Vaez-IravaniMehran Nasser-GhodsiGuoheng Zhao
    • Mehdi Vaez-IravaniMehran Nasser-GhodsiGuoheng Zhao
    • G01N23/00G21K7/00H01J40/00
    • H01J37/244G01N2223/079G01N2223/086G01N2223/33H01J37/256H01J2237/24495H01J2237/2511H01J2237/2807
    • A spectrometer having an electron beam generator for generating an electron beam that is directed at a sample. An electron beam positioner directs the electron beam onto a position of the sample, and thereby produces a secondary emitted stream from the sample, where the secondary emitted stream includes at least one of electrons and x-rays. An secondary emitted stream positioner positions the secondary emitted stream onto a detector array, which receives the secondary emitted stream and detects both the amounts and the received positions of the secondary emitted stream. A modulator modulates the electron beam that is directed onto the sample, and thereby sweeps the electron beam between a first position and a second position on the sample. An extractor is in signal communication with both the modulator and the detector array, and extracts a differential signal that represents a difference between the signals that are received from the first position and the signals that are received from the second position.
    • 具有用于产生针对样品的电子束的电子束发生器的光谱仪。 电子束定位器将电子束引导到样品的位置,从而产生来自样品的二次发射流,其中二次发射流包括电子和X射线中的至少一个。 二次发射流定位器将二次发射流定位在检测器阵列上,检测器阵列接收二次发射流并检测二次发射流的量和接收位置。 调制器调制被引导到样品上的电子束,从而在样品上的第一位置和第二位置之间扫描电子束。 提取器与调制器和检测器阵列进行信号通信,并且提取表示从第一位置接收的信号与从第二位置接收的信号之间的差的差分信号。
    • 70. 发明授权
    • Multi-spot scanning system and method
    • 多点扫描系统及方法
    • US08194301B2
    • 2012-06-05
    • US12042252
    • 2008-03-04
    • Guoheng ZhaoRex RunyonMehdi Vaez-Iravani
    • Guoheng ZhaoRex RunyonMehdi Vaez-Iravani
    • G02B26/08
    • G01N21/9501G01N21/8806G01N2201/10G01N2201/104G02B26/123Y10S359/90
    • A multi-spot scanning technique using a spot array having a predetermined gap between spots can advantageously provide scalability to a large number of spots as well as the elimination of cross-talk between channels. The multi-spot scanning technique can select a number of spots for the spot array (1D or 2D), determine a separation between the spots to minimize crosstalk, and perform a scan on a wafer using the spot array and a full field of view (FOV). Performing the scan includes performing a plurality of scan line cycles, wherein each scan line cycle can fill in gaps left by previous scan line cycles. This “delay and fill” scan allows large spacing between spots, thereby eliminating cross-talk at the detector plane. In one embodiment, the scan is begun and ended outside a desired scan area on the wafer to ensure full scan coverage.
    • 使用具有点之间的预定间隙的点阵列的多点扫描技术可以有利地提供大量斑点的可扩展性以及消除通道之间的串扰。 多点扫描技术可以为斑点阵列(1D或2D)选择多个斑点,确定斑点之间的距离以最小化串扰,并使用斑点阵列和全视场对晶片进行扫描( FOV)。 执行扫描包括执行多个扫描线周期,其中每个扫描线周期可以填充先前扫描线周期留下的间隙。 这种“延迟和填充”扫描允许斑点之间的大间距,从而消除检测器平面处的串扰。 在一个实施例中,扫描开始并在晶片上期望的扫描区域外部结束以确保全扫描覆盖。