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    • 1. 发明授权
    • In-situ metalization monitoring using eddy current measurements during the process for removing the film
    • 在去除薄膜的过程中使用涡流测量进行原位金属化监测
    • US06433541B1
    • 2002-08-13
    • US09633198
    • 2000-08-07
    • Kurt R. LehmanShing M. LeeWalter Halmer Johnson, IIIJohn Fielden
    • Kurt R. LehmanShing M. LeeWalter Halmer Johnson, IIIJohn Fielden
    • G01B706
    • G01N27/72
    • Disclosed is a method of obtaining information in-situ regarding a film of a sample using an eddy probe during a process for removing the film. The eddy probe has at least one sensing coil. An AC voltage is applied to the sensing coil(s) of the eddy probe. One or more first signals are measured in the sensing coil(s) of the eddy probe when the sensing coil(s) are positioned proximate the film of the sample. One or more second signals are measured in the sensing coil(s) of the eddy probe when the sensing coil(s) are positioned proximate to a reference material having a fixed composition and/or distance from the sensing coil. The first signals are calibrated based on the second signals so that undesired gain and/or phase changes within the first signals are corrected. A property value of the film is determined based on the calibrated first signals. An apparatus for performing the above described method is also disclosed.
    • 公开了一种在除去膜的过程中使用涡流探针在原位获取样品的膜的方法。 涡流探头具有至少一个感测线圈。 交流电压被施加到涡流探头的感测线圈上。 当感测线圈靠近样品的膜定位时,在涡流探针的感测线圈中测量一个或多个第一信号。 当感测线圈靠近具有与感测线圈的固定成分和/或距离的参考材料定位时,在涡流探针的感测线圈中测量一个或多个第二信号。 第一信号基于第二信号进行校准,从而校正第一信号内的不期望的增益和/或相位变化。 基于校准的第一信号确定胶片的属性值。 还公开了一种用于执行上述方法的装置。
    • 4. 发明授权
    • Environmental damage reduction
    • 环境损害减少
    • US07096752B1
    • 2006-08-29
    • US10979489
    • 2004-11-02
    • Kurt R. Lehman
    • Kurt R. Lehman
    • G01M19/00
    • H01L21/67242H01L21/67017H01L21/67028
    • A substrate processor that processes and inspects a substrate. A substrate handler moves a substrate within the substrate processor. A processing chamber receives the substrate from the substrate handler, and processes the substrate using damaging material that is retained to some extent by the substrate. An inspection tool receives the substrate from the substrate handler after the substrate has been processed. A controlled environment surrounds at least a portion of the inspection tool and the substrate. A purge gas supply provides a purge gas at a flow rate. A moisture control unit adjusts the purge gas to a relative humidity, and gas inlets direct the purge gas into the controlled environment.
    • 处理和检查基板的基板处理器。 衬底处理器移动衬底处理器内的衬底。 处理室从衬底处理器接收衬底,并使用由衬底在一定程度上保持的损坏材料来处理衬底。 在处理基板之后,检查工具从基板处理器接收基板。 受控环境围绕检查工具和基底的至少一部分。 吹扫气体供应以流量提供净化气体。 湿度控制单元将净化气体调节到相对湿度,并且气体入口将吹扫气体引导到受控环境中。
    • 7. 发明授权
    • In-situ metalization monitoring using eddy current and optical measurements
    • 使用涡流和光学测量进行原位金属化监测
    • US06707540B1
    • 2004-03-16
    • US09633800
    • 2000-08-07
    • Kurt R. LehmanShing M. LeeWalter Halmer Johnson, IIIJohn FieldenGuoheng ZhaoMehrdad Nikoonahad
    • Kurt R. LehmanShing M. LeeWalter Halmer Johnson, IIIJohn FieldenGuoheng ZhaoMehrdad Nikoonahad
    • G01N2100
    • G01N27/72
    • Disclosed is a chemical mechanical polishing (CMP) system for polishing a sample with a polishing agent and monitoring the sample. The CMP system includes a polishing table, a sample carrier arranged to hold the sample over the polishing table, and an eddy probe. The polishing table and sample carrier are arranged to receive a polishing agent between the sample and the polishing table and to polish the sample by moving the polishing table and the sample carrier relative to each other. The eddy probe is arranged to be operable to obtain a measurement of the sample while the sample is being polished. The CMP system further includes an optical measurement device arranged to be operable to obtain a measurement of the sample while the sample is being polished. The CMP system also has a memory and a processor coupled with the memory. The processor and memory are adapted for operating the eddy probe and optical measurement device.
    • 公开了一种用抛光剂抛光样品并监测样品的化学机械抛光(CMP)系统。 CMP系统包括抛光台,布置成将样品保持在抛光台上的样品载体和涡流探针。 抛光台和样品载体布置成在样品和抛光台之间接收抛光剂,并通过相对于彼此移动抛光台和样品载体来抛光样品。 涡流探针布置成可操作以在样品被抛光时获得样品的测量。 CMP系统还包括光学测量装置,其布置成可操作以在样品被抛光时获得样品的测量。 CMP系统还具有与存储器耦合的存储器和处理器。 处理器和存储器适于操作涡流探针和光学测量装置。