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1. 发明授权

US08283631B2 In-situ differential spectroscopy 失效
标题翻译：原位差分光谱
公开(公告)号：US08283631B2
公开(公告)日：2012-10-09
申请号：US12351215
申请日：2009-01-09
申请人： Mehdi Vaez-Iravani , Mehran Nasser-Ghodsi , Guoheng Zhao
发明人： Mehdi Vaez-Iravani , Mehran Nasser-Ghodsi , Guoheng Zhao
IPC分类号： G01N23/00 , G21K7/00 , H01J40/00
CPC分类号： H01J37/244 , G01N2223/079 , G01N2223/086 , G01N2223/33 , H01J37/256 , H01J2237/24495 , H01J2237/2511 , H01J2237/2807
摘要： A spectrometer having an electron beam generator for generating an electron beam that is directed at a sample. An electron beam positioner directs the electron beam onto a position of the sample, and thereby produces a secondary emitted stream from the sample, where the secondary emitted stream includes at least one of electrons and x-rays. An secondary emitted stream positioner positions the secondary emitted stream onto a detector array, which receives the secondary emitted stream and detects both the amounts and the received positions of the secondary emitted stream. A modulator modulates the electron beam that is directed onto the sample, and thereby sweeps the electron beam between a first position and a second position on the sample. An extractor is in signal communication with both the modulator and the detector array, and extracts a differential signal that represents a difference between the signals that are received from the first position and the signals that are received from the second position.
摘要翻译：具有用于产生针对样品的电子束的电子束发生器的光谱仪。电子束定位器将电子束引导到样品的位置，从而产生来自样品的二次发射流，其中二次发射流包括电子和X射线中的至少一个。二次发射流定位器将二次发射流定位在检测器阵列上，检测器阵列接收二次发射流并检测二次发射流的量和接收位置。调制器调制被引导到样品上的电子束，从而在样品上的第一位置和第二位置之间扫描电子束。提取器与调制器和检测器阵列进行信号通信，并且提取表示从第一位置接收的信号与从第二位置接收的信号之间的差的差分信号。

2. 发明授权

US08765496B2 Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis 失效
标题翻译：用于测量衬底特性或制备用于分析的衬底的方法和系统
公开(公告)号：US08765496B2
公开(公告)日：2014-07-01
申请号：US12110759
申请日：2008-04-28
申请人： Mehran Nasser-Ghodsi , Mark Borowicz , Dave Bakker , Mehdi Vaez-Iravani , Prashant Aji , Rudy Garcia , Tzu Chin Chuang
发明人： Mehran Nasser-Ghodsi , Mark Borowicz , Dave Bakker , Mehdi Vaez-Iravani , Prashant Aji , Rudy Garcia , Tzu Chin Chuang
IPC分类号： H01L21/00
CPC分类号： H01J37/317 , G01N1/32 , H01J37/244 , H01J37/3005 , H01J2237/2814 , H01J2237/3174 , H01J2237/31745
摘要： Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.
摘要翻译：提供了用于测量基板的特性或准备用于分析的基板的方法和系统。用于测量衬底的特性的一种方法包括使用电子束去除衬底上的特征的一部分以暴露特征的剩余部分的横截面轮廓。该特征可以是光致抗蚀剂特征。该方法还包括测量横截面轮廓的特性。制备用于分析的基板的方法包括使用化学蚀刻与电子束结合来去除靠近缺陷的衬底上的材料的一部分。缺陷可能是地下缺陷或部分地下缺陷。制备用于分析的衬底的另一种方法包括使用化学蚀刻与电子束和光束组合地去除邻近缺陷的衬底上的材料的一部分。

3. 发明申请

US20080264905A1 METHODS AND SYSTEMS FOR MEASURING A CHARACTERISTIC OF A SUBSTRATE OR PREPARING A SUBSTRATE FOR ANALYSIS 失效
标题翻译：用于测量基板特性或制备用于分析的基板的方法和系统
公开(公告)号：US20080264905A1
公开(公告)日：2008-10-30
申请号：US12110759
申请日：2008-04-28
申请人： Mehran Nasser-Ghodsi , Mark Borowicz , Dave Bakker , Mehdi Vaez-Iravani , Prashant Aji , Rudy F. Garcia , Tzu Chin Chuang
发明人： Mehran Nasser-Ghodsi , Mark Borowicz , Dave Bakker , Mehdi Vaez-Iravani , Prashant Aji , Rudy F. Garcia , Tzu Chin Chuang
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01J37/317 , G01N1/32 , H01J37/244 , H01J37/3005 , H01J2237/2814 , H01J2237/3174 , H01J2237/31745
摘要： Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.
摘要翻译：提供了用于测量基板的特性或准备用于分析的基板的方法和系统。用于测量衬底的特性的一种方法包括使用电子束去除衬底上的特征的一部分以暴露特征的剩余部分的横截面轮廓。该特征可以是光致抗蚀剂特征。该方法还包括测量横截面轮廓的特性。制备用于分析的基板的方法包括使用化学蚀刻与电子束结合来去除靠近缺陷的衬底上的材料的一部分。缺陷可能是地下缺陷或部分地下缺陷。制备用于分析的衬底的另一种方法包括使用化学蚀刻与电子束和光束组合地去除邻近缺陷的衬底上的材料的一部分。

4. 发明申请

US20050221229A1 Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis 有权
标题翻译：用于测量衬底特性或制备用于分析的衬底的方法和系统
公开(公告)号：US20050221229A1
公开(公告)日：2005-10-06
申请号：US11086048
申请日：2005-03-22
申请人： Mehran Nasser-Ghodsi , Mark Borowicz , Dave Bakker , Mehdi Vaez-Iravani , Prashant Aji , Rudy Garcia , Tzu Chuang
发明人： Mehran Nasser-Ghodsi , Mark Borowicz , Dave Bakker , Mehdi Vaez-Iravani , Prashant Aji , Rudy Garcia , Tzu Chuang
IPC分类号： A61N5/00 , G01N1/32 , G03C5/00 , G03F9/00 , G21G5/00 , H01J37/30
CPC分类号： H01J37/317 , G01N1/32 , H01J37/244 , H01J37/3005 , H01J2237/2814 , H01J2237/3174 , H01J2237/31745
摘要： Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.
摘要翻译：提供了用于测量基板的特性或准备用于分析的基板的方法和系统。用于测量衬底的特性的一种方法包括使用电子束去除衬底上的特征的一部分以暴露特征的剩余部分的横截面轮廓。该特征可以是光致抗蚀剂特征。该方法还包括测量横截面轮廓的特性。制备用于分析的基板的方法包括使用化学蚀刻与电子束结合来去除靠近缺陷的衬底上的材料的一部分。缺陷可能是地下缺陷或部分地下缺陷。制备用于分析的衬底的另一种方法包括使用化学蚀刻与电子束和光束组合地去除邻近缺陷的衬底上的材料的一部分。

5. 发明申请

US20130341504A1 AUGER ELEMENTAL IDENTIFICATION ALGORITHM 失效
标题翻译： AUGER元素识别算法
公开(公告)号：US20130341504A1
公开(公告)日：2013-12-26
申请号：US13913240
申请日：2013-06-07
申请人： Mark Neill , Mehran Nasser-Ghodsi , Christopher Sears
发明人： Mark Neill , Mehran Nasser-Ghodsi , Christopher Sears
IPC分类号： H01J49/00 , H01J49/44
CPC分类号： H01J37/26 , G01N23/2276 , G01N2223/345 , G06K9/00563 , G06K9/6271 , H01J49/0036 , H01J49/44
摘要： System and methods for decomposing an Auger electron spectrum into elemental and chemical components, includes conditioning and input spectrum to generate a normalized input spectrum; determining statistical correlation between the normalized input spectrum and stored elemental spectral signatures; and characterizing elemental or chemical species in the input spectrum from the statistical correlation, wherein said conditioning the input spectrum includes estimating a background signal of non-Auger electrons in the input spectrum and subtracting the estimated background signal from the input spectrum.
摘要翻译：将俄歇电子谱分解为元素和化学成分的系统和方法包括调节和输入光谱以产生归一化输入光谱; 确定归一化输入光谱和存储的基本光谱特征之间的统计相关性; 以及从所述统计相关性表征所述输入光谱中的元素或化学物质，其中所述调节所述输入光谱包括估计所述输入光谱中的非俄歇电子的背景信号并从所述输入光谱中减去所估计的背景信号。

6. 发明授权

US08530867B1 Electron generation and delivery system for contamination sensitive emitters 有权
标题翻译：用于污染敏感发射器的电子发射和传输系统
公开(公告)号：US08530867B1
公开(公告)日：2013-09-10
申请号：US13457897
申请日：2012-04-27
申请人： Mehran Nasser-Ghodsi
发明人： Mehran Nasser-Ghodsi
IPC分类号： H01J37/073
CPC分类号： H01J37/073 , H01J37/265 , H01J2237/022 , H01J2237/06341 , H01J2237/0653
摘要： Contamination may be removed from a field emitter unit during operation of the emitter unit in an environment at a pressure that lies within a range between 10−6 torr and 10−8 torr. At regular predetermined intervals an electron beam from an emitter tip may be deflected away from a path through a beam defining aperture and onto an electron collector. An electron beam current to the electron collector may be determined and the emitter unit may be flash heated if the current to the electron collector is below a threshold. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：在位于10-6托和10-8托之间的压力的环境中，在发射器单元操作期间，可以从场发射器单元去除污染物。以规则的预定间隔，来自发射极尖端的电子束可以偏离通过光束限定孔径并且到电子收集器的路径。可以确定到电子收集器的电子束电流，并且如果到电子收集器的电流低于阈值，则发射器单元可以被闪光加热。要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

7. 发明申请

US20130001417A1 BACKGROUND REDUCTION SYSTEM INCLUDING LOUVER 失效
标题翻译：包括LOUVER的背景减少系统
公开(公告)号：US20130001417A1
公开(公告)日：2013-01-03
申请号：US13174020
申请日：2011-06-30
申请人： Mehran Nasser-Ghodsi , Christopher Sears , Robert Haynes
发明人： Mehran Nasser-Ghodsi , Christopher Sears , Robert Haynes
IPC分类号： G01N23/22
CPC分类号： H01J37/244 , H01J2237/045 , H01J2237/24485 , H01J2237/2449 , H01J2237/2511 , H01J2237/2516
摘要： A background reduction system may include, but is not limited to: a charged particle source configured to generate a charged-particle beam; a louvered structure including one or more apertures configured to selectively transmit charged particles according to their angle of incidence; and a charged-particle detector configured to receive charged particles selectively transmitted by the louvered structure.
摘要翻译：背景还原系统可以包括但不限于：被配置为产生带电粒子束的带电粒子源; 百叶窗结构，其包括一个或多个孔，构造成根据其入射角选择性地透过带电粒子; 以及被配置为接收由百叶窗结构选择性地传送的带电粒子的带电粒子检测器。

8. 发明授权

US07576317B1 Calibration standard for a dual beam (FIB/SEM) machine 有权
标题翻译：双光束（FIB / SEM）机器的校准标准
公开(公告)号：US07576317B1
公开(公告)日：2009-08-18
申请号：US12116890
申请日：2008-05-07
申请人： Marco Tortonese , Mehran Nasser-Ghodsi
发明人： Marco Tortonese , Mehran Nasser-Ghodsi
IPC分类号： G01N21/84
CPC分类号： H01J40/14
摘要： Calibration of measurements of features made with a system having a micromachining tool and an analytical tool is disclosed. The measurements can be calibrated with a standard having a calibrated feature with one or more known dimensions. The standard may have one or more layers including a single crystal layer. The calibrated feature may include one or more vertical features characterized by one or more known dimensions and formed through the single crystal layer. A trench is formed in a sample with the micromachining tool to reveal a sample feature. The analytical tool measures one or more dimensions of the sample feature corresponding to one or more known dimensions of the calibrated feature. The known dimensions of the calibrated feature are measured with the same analytical tool. The measured dimensions of the sample feature and the calibrated feature can then be compared to the known dimensions of the calibrated feature.
摘要翻译：公开了使用具有微加工工具和分析工具的系统进行的特征的测量的校准。测量可以用具有一个或多个已知尺寸的校准特征的标准进行校准。标准可以具有包括单晶层的一层或多层。经校准的特征可以包括由一个或多个已知尺寸表征并且通过单晶层形成的一个或多个垂直特征。在微加工工具的样品中形成沟槽以露出样品特征。分析工具测量与校准特征的一个或多个已知尺寸对应的样本特征的一个或多个维度。使用相同的分析工具测量校准特征的已知尺寸。然后将样本特征和校准特征的测量尺寸与已校准特征的已知尺寸进行比较。

9. 发明申请

US20090010526A1 TUNGSTEN PLUG DEPOSITION QUALITY EVALUATION METHOD BY EBACE TECHNOLOGY 有权
标题翻译： EBACE技术的TUNGSTEN PLUG沉积质量评估方法
公开(公告)号：US20090010526A1
公开(公告)日：2009-01-08
申请号：US11622793
申请日：2007-01-12
申请人： Yehiel Gotkis , Sergey Lopatin , Mehran Nasser-Ghodsi
发明人： Yehiel Gotkis , Sergey Lopatin , Mehran Nasser-Ghodsi
IPC分类号： G06K9/00 , G01R31/26 , H01L23/58
CPC分类号： H01L22/12 , H01L22/34
摘要： A first embodiment of the invention relates to a method for evaluating the quality of structures on an integrated circuit wafer. Test structures formed on either on the integrated or on a test wafer are exposed to an electron beam and an electron-beam activated chemical etch. The electron-beam activated etching gas or vapor etches the test structures, which are analyzed after etching to determine a measure of quality of the test structures. The measure of quality may be used in a statistical process control to adjust the parameters used to form device structures on the integrated circuit wafer. The test structures are formed on an integrated circuit wafer having two or more die. Each die has one or more integrated circuit structures. The test structures are formed on scribe lines between two or more adjacent die. Each test structure may correspond in dimensions and/or composition to one or more of the integrated circuit structures.
摘要翻译：本发明的第一实施例涉及一种用于评估集成电路晶片上的结构质量的方法。在集成的或在测试晶片上形成的测试结构暴露于电子束和电子束激活的化学蚀刻。电子束活化的蚀刻气体或蒸气蚀刻测试结构，其在蚀刻后分析以确定测试结构的质量的度量。可以在统计过程控制中使用质量测量来调整用于在集成电路晶片上形成器件结构的参数。测试结构形成在具有两个或更多个管芯的集成电路晶片上。每个管芯具有一个或多个集成电路结构。测试结构形成在两个或更多相邻模具之间的划线上。每个测试结构可以在尺寸和/或组成上与一个或多个集成电路结构相对应。

10. 发明申请

US20070264831A1 USE OF ION IMPLANTATION IN CHEMICAL ETCHING 有权
标题翻译：在化学蚀刻中使用离子植入
公开(公告)号：US20070264831A1
公开(公告)日：2007-11-15
申请号：US11752829
申请日：2007-05-23
申请人： Ming Yu , Mehran Nasser-Ghodsi
发明人： Ming Yu , Mehran Nasser-Ghodsi
IPC分类号： H01L21/02
CPC分类号： G03F7/2043 , H01J2237/31732 , H01J2237/3174 , H01J2237/31744 , H01L21/02057 , H01L21/3065 , H01L21/31116 , H01L21/32136
摘要： A method for controlling chemical dry etching to improve smoothness of an etched surface is disclosed. Ions are implanted into a surface to form a volatilizable compound at a temperature low enough to avoid, reduce, or eliminate formation of three-dimensional structures of the volatilizable compound that might create the roughness at an etched surface of the volatilizable compound. The ions are applied in a sufficient energy to penetrate to a predetermined depth of material that is to be removed from the surface in an etching cycle, and in a sufficient dosage to achieve full formation of the volatilizable compound. The surface of the volatilizable compound is exposed to a gas composition for a time duration sufficient to completely etch the volatilizable compound.
摘要翻译：公开了一种用于控制化学干蚀刻以改善蚀刻表面的平滑度的方法。将离子植入表面以在足够低的温度下形成可挥发化合物，以避免，减少或消除可挥发化合物的三维结构的形成，这可能在可挥发化合物的蚀刻表面产生粗糙度。以足够的能量施加离子以在蚀刻循环中渗透到要从表面除去的预定深度的材料，并以足够的剂量实现完全形成可挥发化合物。可挥发化合物的表面暴露于气体组合物持续足够时间以完全蚀刻可挥发化合物。

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