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    • 1. 发明授权
    • In-situ metalization monitoring using eddy current and optical measurements
    • 使用涡流和光学测量进行原位金属化监测
    • US06707540B1
    • 2004-03-16
    • US09633800
    • 2000-08-07
    • Kurt R. LehmanShing M. LeeWalter Halmer Johnson, IIIJohn FieldenGuoheng ZhaoMehrdad Nikoonahad
    • Kurt R. LehmanShing M. LeeWalter Halmer Johnson, IIIJohn FieldenGuoheng ZhaoMehrdad Nikoonahad
    • G01N2100
    • G01N27/72
    • Disclosed is a chemical mechanical polishing (CMP) system for polishing a sample with a polishing agent and monitoring the sample. The CMP system includes a polishing table, a sample carrier arranged to hold the sample over the polishing table, and an eddy probe. The polishing table and sample carrier are arranged to receive a polishing agent between the sample and the polishing table and to polish the sample by moving the polishing table and the sample carrier relative to each other. The eddy probe is arranged to be operable to obtain a measurement of the sample while the sample is being polished. The CMP system further includes an optical measurement device arranged to be operable to obtain a measurement of the sample while the sample is being polished. The CMP system also has a memory and a processor coupled with the memory. The processor and memory are adapted for operating the eddy probe and optical measurement device.
    • 公开了一种用抛光剂抛光样品并监测样品的化学机械抛光(CMP)系统。 CMP系统包括抛光台,布置成将样品保持在抛光台上的样品载体和涡流探针。 抛光台和样品载体布置成在样品和抛光台之间接收抛光剂,并通过相对于彼此移动抛光台和样品载体来抛光样品。 涡流探针布置成可操作以在样品被抛光时获得样品的测量。 CMP系统还包括光学测量装置,其布置成可操作以在样品被抛光时获得样品的测量。 CMP系统还具有与存储器耦合的存储器和处理器。 处理器和存储器适于操作涡流探针和光学测量装置。
    • 2. 发明授权
    • In-situ metalization monitoring using eddy current measurements during the process for removing the film
    • 在去除薄膜的过程中使用涡流测量进行原位金属化监测
    • US06433541B1
    • 2002-08-13
    • US09633198
    • 2000-08-07
    • Kurt R. LehmanShing M. LeeWalter Halmer Johnson, IIIJohn Fielden
    • Kurt R. LehmanShing M. LeeWalter Halmer Johnson, IIIJohn Fielden
    • G01B706
    • G01N27/72
    • Disclosed is a method of obtaining information in-situ regarding a film of a sample using an eddy probe during a process for removing the film. The eddy probe has at least one sensing coil. An AC voltage is applied to the sensing coil(s) of the eddy probe. One or more first signals are measured in the sensing coil(s) of the eddy probe when the sensing coil(s) are positioned proximate the film of the sample. One or more second signals are measured in the sensing coil(s) of the eddy probe when the sensing coil(s) are positioned proximate to a reference material having a fixed composition and/or distance from the sensing coil. The first signals are calibrated based on the second signals so that undesired gain and/or phase changes within the first signals are corrected. A property value of the film is determined based on the calibrated first signals. An apparatus for performing the above described method is also disclosed.
    • 公开了一种在除去膜的过程中使用涡流探针在原位获取样品的膜的方法。 涡流探头具有至少一个感测线圈。 交流电压被施加到涡流探头的感测线圈上。 当感测线圈靠近样品的膜定位时,在涡流探针的感测线圈中测量一个或多个第一信号。 当感测线圈靠近具有与感测线圈的固定成分和/或距离的参考材料定位时,在涡流探针的感测线圈中测量一个或多个第二信号。 第一信号基于第二信号进行校准,从而校正第一信号内的不期望的增益和/或相位变化。 基于校准的第一信号确定胶片的属性值。 还公开了一种用于执行上述方法的装置。
    • 7. 发明授权
    • Film thickness measurement using electron-beam induced x-ray microanalysis
    • 使用电子束诱导X射线微量分析的膜厚度测量
    • US06787773B1
    • 2004-09-07
    • US09695726
    • 2000-10-23
    • Shing M. Lee
    • Shing M. Lee
    • G21K700
    • G01B15/02G01N23/22H01J37/252H01J2237/24415H01J2237/2814
    • An X-ray micoanalysis test system comprising a beam generator which induces X-rays to emanate from a semiconductor device containing film stacks. The charged particle beam will penetrate at least two layers of a film stack on a semiconductor device so that these layers may be tested. The X-rays will be detected using multiple X-ray detectors that detect X-ray photons having a specific energy level. The X-rays will then be used to analyze the characteristics of the semiconductor device. Each of the multiple X-ray detectors may be wavelength dispersive system (WDS) detectors. The present invention also provides a method for measuring film stack characteristics on a semiconductor device. The method for measuring includes directing an electron beam towards the semiconductor device so that the electron beam penetrates at least a conductive film layer and a liner layer, detecting the X-rays which are caused to emanate from the device with multiple X-ray detectors that detect X-ray photons having a specific energy level. The present invention also provides a method and a computer-readable medium which determines a film stack's properties using the data collected with the test system of the present invention. The method and computer-readable medium includes selecting a set of values which estimate the film stack characteristics, using the estimated values to generate predicted data by solving equations which model the film stack, and selecting a new set of estimated film stack characteristic values when the difference between the predicted data and the raw data is larger than a certain margin of error.
    • 一种X射线微分析测试系统,包括一个光束发生器,其诱发从包含膜堆的半导体器件发出的X射线。 带电粒子束将穿透半导体器件上的至少两层薄膜叠层,以便可以对这些层进行测试。 将使用检测具有特定能级的X射线光子的多个X射线检测器检测X射线。 然后将X射线用于分析半导体器件的特性。 多个X射线检测器中的每一个可以是波长色散系统(WDS)检测器。 本发明还提供了一种用于测量半导体器件上的膜叠层特性的方法。 测量方法包括将电子束引向半导体器件,使得电子束至少穿透导电膜层和衬垫层,检测由多个X射线检测器从器件发出的X射线 检测具有特定能级的X射线光子。 本发明还提供一种方法和计算机可读介质,其使用利用本发明的测试系统收集的数据来确定薄膜叠层的性质。 该方法和计算机可读介质包括选择一组估计胶片堆叠特性的值,使用估计值通过求解建模胶片堆叠的方程来生成预测数据,以及当 预测数据与原始数据之间的差异大于一定的误差范围。