专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US06313033B1 Ionized metal plasma Ta, TaNx, W, and WNx liners for gate electrode applications 失效
标题翻译：用于栅电极应用的离子化金属等离子体Ta，TaNx，W和WNx衬垫
公开(公告)号：US06313033B1
公开(公告)日：2001-11-06
申请号：US09362923
申请日：1999-07-27
申请人： Tony Chiang , Bingxi Sun , Suraj Rengarajan , Peijun Ding , Barry Chin
发明人： Tony Chiang , Bingxi Sun , Suraj Rengarajan , Peijun Ding , Barry Chin
IPC分类号： H01L2144
CPC分类号： H01L27/1087 , H01L21/2855 , H01L21/76843 , H01L28/40 , H01L28/56 , H01L28/75
摘要： The invention provides a method for forming a microelectronic device comprising: forming a first electrode; depositing an adhesion layer over the first electrode utilizing high density plasma physical vapor deposition, wherein the adhesion layer comprises a material selected from Ta, TaNx, W, WNx, Ta/TaNx, W/WNx, and combinations thereof, depositing a dielectric layer over the adhesion layer; and forming a second electrode over the dielectric layer. The invention also provides a microelectronic device comprising: a first electrode; a second electrode; a dielectric layer disposed between the first and second electrodes; and an adhesion layer disposed between the first electrode and the dielectric layer, wherein the adhesion layer comprises a material selected from Ta, TaNx, W, WNx, Ta/TaNx, W/WNx, and combinations thereof.
摘要翻译：本发明提供一种形成微电子器件的方法，包括：形成第一电极; 使用高密度等离子体物理气相沉积在第一电极上沉积粘合层，其中粘合层包括选自Ta，TaNx，W，WNx，Ta / TaNx，W / WNx的材料及其组合，将介电层沉积在粘合层; 以及在所述电介质层上形成第二电极。本发明还提供了一种微电子器件，包括：第一电极; 第二电极; 设置在所述第一和第二电极之间的电介质层; 以及设置在第一电极和电介质层之间的粘合层，其中粘合层包括选自Ta，TaNx，W，WNx，Ta / TaNx，W / WNx的材料及其组合。

62. 发明授权

US6139699A Sputtering methods for depositing stress tunable tantalum and tantalum nitride films 失效
标题翻译：用于沉积应力可调钽和氮化钽膜的溅射方法
公开(公告)号：US6139699A
公开(公告)日：2000-10-31
申请号：US863451
申请日：1997-05-27
申请人： Tony Chiang , Peijun Ding , Barry L. Chin
发明人： Tony Chiang , Peijun Ding , Barry L. Chin
IPC分类号： C23C14/00 , C23C14/06 , C23C14/14 , C23C14/16 , C23C14/34 , C23C14/35 , C23C14/58 , H01L21/285 , H01L21/768 , H01L23/532
CPC分类号： C23C14/345 , C23C14/0036 , C23C14/0641 , C23C14/16 , C23C14/3492 , C23C14/358 , C23C14/5833 , H01L21/2855 , H01L21/76838 , H01L21/76841 , H01L21/76843 , H01L21/76862 , H01L21/76864 , H01L23/53233 , H01L23/53238 , H01L2924/0002
摘要： The present disclosure pertains to our discovery that residual stress residing in a tantalum film or tantalum nitride film can be controlled (tuned) by controlling particular process variables during film deposition. By tuning individual film stresses within a film stack, it is possible to balance stresses within the stack. Process variables of particular interest include: power to the sputtering target; process chamber pressure (i.e., the concentration of various gases and ions present in the chamber); substrate DC offset bias voltage (typically an increase in the AC applied substrate bias power); power to an ionization source (typically a coil); and temperature of the substrate upon which the film is deposited. The process chamber pressure and the substrate offset bias most significantly affect the film tensile and compressive stress components, respectively. The most advantageous tuning of a sputtered film is achieved using high density plasma sputter deposition, which provides for particular control over the ion bombardment of the depositing film surface. When the tantalum or tantalum nitride film is deposited using high density plasma sputtering, power to the ionization source can be varied for stress tuning of the film. We have been able to reduce the residual stress in tantalum or tantalum nitride films deposited using high density plasma sputtering to between about 6.times.10.sup.+9 dynes/cm.sup.2 and about -6.times.10.sup.+9 dynes/cm.sup.2 using techniques described herein. The tantalum and tantalum nitride films can also be tuned following deposition using ion bombardment of the film surface and annealing of the deposited film.
摘要翻译：本公开涉及我们的发现，通过在膜沉积期间控制特定的工艺变量，可以控制（调整）驻留在钽膜或氮化钽膜中的残余应力。通过调整薄膜叠层内的各个薄膜应力，可以平衡叠层内的应力。特别感兴趣的过程变量包括：溅射靶的功率; 处理室压力（即存在于室中的各种气体和离子的浓度）; 衬底DC偏移偏置电压（通常为施加衬底偏置功率的AC增加）; 电源（通常为线圈）; 以及沉积膜的基板的温度。处理室压力和基板偏移偏压分别最显着地影响膜的拉伸和压应力分量。使用高密度等离子体溅射沉积来实现溅射膜的最有利的调谐，其提供对沉积膜表面的离子轰击的特定控制。当使用高密度等离子体溅射沉积钽或氮化钽膜时，电离源的功率可以改变以用于膜的应力调谐。使用本文所述的技术，我们已经能够将使用高密度等离子体溅射沉积的钽或氮化钽膜中的残余应力减小到约6×10 9 + 9达因/ cm 2和约-6×10 9达因/ cm 2之间。也可以在使用离子轰击膜表面和沉积膜的退火进行沉积之后调整钽和氮化钽膜。

63. 发明授权

US06066892A Copper alloy seed layer for copper metallization in an integrated circuit 失效
标题翻译：铜合金种子层用于集成电路中的铜金属化
公开(公告)号：US06066892A
公开(公告)日：2000-05-23
申请号：US79107
申请日：1998-05-14
申请人： Peijun Ding , Tony Chiang , Imran Hashim , Bingxi Sun , Barry Chin
发明人： Peijun Ding , Tony Chiang , Imran Hashim , Bingxi Sun , Barry Chin
IPC分类号： H01L21/28 , C23C14/02 , C23C14/16 , C23C16/02 , C23C16/06 , H01L21/203 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/532 , H01L29/45
CPC分类号： H01L21/76843 , C23C14/024 , C23C14/025 , C23C14/16 , C23C14/165 , C23C16/0281 , C23C16/06 , H01L21/28556 , H01L21/76831 , H01L21/76834 , H01L21/76867 , H01L21/76871 , H01L21/76877 , H01L21/76888 , H01L23/53233 , H01L23/53238 , H01L21/2855 , H01L2924/0002
摘要： A copper metallization structure in which a layer of a copper alloy, such as Cu--Mg or Cu--Al is deposited over a silicon oxide based dielectric layer and a substantially pure copper layer is deposited over the copper alloy layer. The copper alloy layer serves as a seed or wetting layer for subsequent filling of via holes and trenches with substantially pure copper. Preferred examples of the alloying elements and their atomic alloying percentage include magnesium between 0.05 and 6% and aluminum between 0.05 and 0.3%. Further examples include boron, tantalum, tellurium, and titanium. Preferably, the copper alloy is deposited cold in a sputter process, but, during the deposition of the pure copper layer or afterwards in a separate annealing step, the temperature is raised sufficiently high to cause the alloying element of the copper alloy to migrate to the dielectric layer and form a barrier there against diffusion of copper into and through the dielectric layer. This barrier also promotes adhesion of the alloy layer to the dielectric layer, thereby forming a superior wetting and seed layer for subsequent copper full-fill techniques. Filling of the alloy-lined feature can be accomplished using PVD, CVD, or electro/electroless plating.
摘要翻译：在铜合金层上沉积铜基金属化结构，其中在氧化硅基介电层和基本上纯的铜层上沉积诸如Cu-Mg或Cu-Al的铜合金层。铜合金层用作种子或润湿层，用于随后用基本上纯的铜填充通孔和沟槽。合金元素的优选实例及其原子合金化百分比包括0.05至6％的镁和0.05-0.3％的铝。其他实例包括硼，钽，碲和钛。优选地，铜合金在溅射过程中冷沉积，但是在纯铜层沉积期间或之后在单独的退火步骤中，温度升高到足够高以使铜合金的合金元素迁移到电介质层，并形成阻挡铜，以扩散到介电层中并穿过介电层。该屏障还促进了合金层对电介质层的粘附，从而形成了用于随后的铜全填充技术的优异的润湿和种子层。可以使用PVD，CVD或电/无电镀来完成合金衬里特征的填充。

64. 发明授权

US06057223A Passivated copper conductive layers for microelectronic applications 失效
标题翻译：用于微电子应用的钝化铜导电层
公开(公告)号：US06057223A
公开(公告)日：2000-05-02
申请号：US21666
申请日：1998-02-10
申请人： William A. Lanford , Wei Wang , Peijun Ding
发明人： William A. Lanford , Wei Wang , Peijun Ding
IPC分类号： C23C14/02 , C23C14/16 , C23C14/58 , H01L21/768 , H01L23/532 , H01L21/4763
CPC分类号： C23C14/5806 , C23C14/024 , C23C14/16 , C23C14/5853 , H01L21/76834 , H01L21/76886 , H01L23/53233 , H01L23/53238 , H01L21/76807 , H01L2924/0002
摘要： A copper conductor is formed which is included as a component in microelectronic devices. The conductor is formed by forming a metal layer on the surface of a microelectronic substrate, forming a copper layer on the metal layer, and annealing the metal and copper layers. The annealing step diffuses at least some of the metal layer through the copper layer to the surface thereof where the diffused metal forms a protective metal oxide at the surface of the copper layer. As a result, the metal oxide layer passivates the copper layer.
摘要翻译：形成铜导体作为微电子器件中的组件。通过在微电子基板的表面上形成金属层，在金属层上形成铜层，退火金属层和铜层，形成导体。退火步骤通过铜层将至少一些金属层扩散到其表面，其中扩散金属在铜层的表面形成保护性金属氧化物。结果，金属氧化物层钝化铜层。

65. 发明授权

US6037257A Sputter deposition and annealing of copper alloy metallization 失效
标题翻译：铜合金金属化溅射沉积和退火
公开(公告)号：US6037257A
公开(公告)日：2000-03-14
申请号：US853191
申请日：1997-05-08
申请人： Tony Chiang , Peijun Ding , Barry Chin , Imran Hashim , Bingxi Sun
发明人： Tony Chiang , Peijun Ding , Barry Chin , Imran Hashim , Bingxi Sun
IPC分类号： C23C14/02 , C23C14/16 , C23C16/02 , C23C16/06 , H01L21/285 , H01L21/768 , H01L23/532 , H01L21/4763 , H01L21/44 , H01L23/48
CPC分类号： H01L21/76834 , C23C14/024 , C23C14/025 , C23C14/16 , C23C14/165 , C23C16/0281 , C23C16/06 , H01L21/76831 , H01L21/76843 , H01L21/76871 , H01L21/76877 , H01L21/76888 , H01L23/53233 , H01L23/53238 , H01L21/2855 , H01L2924/0002
摘要： Copper and a small amount of an alloying metal such as magnesium or aluminum are cosputtered onto a substrate having oxide on at least a portion of its surface. Either the wafer is held at an elevated temperature during deposition or the sputtered film is annealed without the wafer being exposed to ambient. Due to the high temperature, the alloying metal diffuses to the surface. If a surface is exposed to a low partial pressure of oxygen or contacts silicon dioxide, the magnesium or aluminum forms a thin stable oxide. The alloying metal oxide encapsulates the copper layer to provide a barrier against copper migration, to form an adhesion layer over silicon dioxide, and to act as a seed layer for the later growth of copper, for example, by electroplating.
摘要翻译：将铜和少量合金化金属如镁或铝分散在其表面的至少一部分上具有氧化物的衬底上。在沉积期间晶片保持在升高的温度下，或者溅射膜被退火而晶片不暴露于环境中。由于高温，合金金属扩散到表面。如果表面暴露于低的氧分压或接触二氧化硅，则镁或铝形成薄的稳定的氧化物。合金化金属氧化物封装铜层以提供阻挡铜迁移的屏障，以形成二氧化硅以上的粘合层，并且作为例如通过电镀的铜的后续生长的种子层。

66. 发明授权

US5959358A Oxidation resistant high conductivity copper layers for microelectronic applications and process of making same 失效
标题翻译：耐氧化高导电铜层
公开(公告)号：US5959358A
公开(公告)日：1999-09-28
申请号：US837770
申请日：1997-04-22
申请人： William A. Lanford , Peijun Ding
发明人： William A. Lanford , Peijun Ding
IPC分类号： C23C14/18 , C23C14/58 , H01L21/768 , H01L23/532 , H05K1/03 , H05K1/09 , H05K3/14 , H01L23/54 , C23C14/34 , H01L23/48
CPC分类号： H01L23/53233 , C23C14/185 , C23C14/58 , H01L21/76838 , H01L23/53238 , H01L2924/0002 , H05K1/0306 , H05K1/09 , H05K3/146
摘要： A process for preparing an oxidation resistant, electrically conductive copper layer on a substrate, and copper layers so formed, are disclosed. A copper layer is deposited onto the surface of a substrate, and subsequently annealed. The copper layer includes magnesium in an amount sufficient to form an inert magnesium oxide layer at the surface of the copper layer upon annealing.
摘要翻译：公开了一种在衬底上制备抗氧化导电铜层的方法和如此形成的铜层。将铜层沉积在衬底的表面上，随后退火。铜层包括在退火时在铜层的表面上足以形成惰性氧化镁层的量的镁。

67. 发明授权

US08968473B2 Stackable multi-port gas nozzles 有权
标题翻译：可堆叠多口气体喷嘴
公开(公告)号：US08968473B2
公开(公告)日：2015-03-03
申请号：US12880941
申请日：2010-09-13
申请人： Steve Poppe , Yan Rozenzon , Peijun Ding
发明人： Steve Poppe , Yan Rozenzon , Peijun Ding
IPC分类号： C23C16/455 , C23C16/458 , C23C16/44
CPC分类号： C23C16/45576 , C23C16/4412 , C23C16/45521 , C23C16/4587
摘要： One embodiment provides a reactor for material deposition. The reactor includes a chamber and at least one gas nozzle. The chamber includes a pair of susceptors, each having a front side and a back side. The front side mounts a number of substrates. The susceptors are positioned vertically so that the front sides of the susceptors face each other, and the vertical edges of the susceptors are in contact with each other, thereby forming a substantially enclosed narrow channel between the substrates mounted on different susceptors. The gas nozzle includes a gas-inlet component situated in the center and a detachable gas-outlet component stacked around the gas-inlet component. The gas-inlet component includes at least one opening coupled to the chamber, and is configured to inject precursor gases into the chamber. The detachable gas-outlet component includes at least one opening coupled to the chamber, and is configured to output exhaust gases from the chamber.
摘要翻译：一个实施方案提供了用于材料沉积的反应器。反应器包括室和至少一个气体喷嘴。该室包括一对基座，每个基座具有前侧和后侧。前面安装了许多基板。基座垂直定位，使得基座的前侧彼此面对，并且基座的垂直边缘彼此接触，从而在安装在不同的基座上的基板之间形成基本封闭的窄通道。气体喷嘴包括位于中心的气体入口部件和在气体入口部件周围堆叠的可拆卸气体出口部件。气体入口部件包括至少一个连接到腔室的开口，并且被构造成将前体气体注入到腔室中。可拆卸的气体出口部件包括至少一个连接到该腔室的开口，并且构造成输出来自腔室的废气。

68. 发明申请

US20130269614A1 VAPOUR CHAMBER AND SUBSTRATE PROCESSING EQUIPMENT USING SAME 审中-公开
标题翻译：蒸气室和基板加工设备
公开(公告)号：US20130269614A1
公开(公告)日：2013-10-17
申请号：US13992165
申请日：2011-11-23
申请人： Mengxin Zhao , Xu Liu , Peijun Ding , Hougong Wang , Wei Xia , Lihui Wen
发明人： Mengxin Zhao , Xu Liu , Peijun Ding , Hougong Wang , Wei Xia , Lihui Wen
IPC分类号： C23C16/46 , H01L21/67
CPC分类号： C23C16/46 , C23C14/02 , H01L21/67103
摘要： The present invention provides a hot plate and substrate processing equipment using the same, wherein the hot plate comprises a central sub hot plate and at least one outer ring sub hot plate located around the central sub hot plate; thermal insulation parts are provided between the central sub hot plate and the outer ring sub hot plate and between two adjacent outer ring sub hot plates, so that the heat conduction between the adjacent sub hot plates can be effectively prevented or reduced by means of the thermal insulation parts. The hot plate and the substrate processing equipment using the same provided in the present invention can effectively compensate for the heat losses in the edge region of the substrate, so as to keep the heating rate the same in each region of the substrate.
摘要翻译：本发明提供一种使用该热板的加热板和基板加工装置，其特征在于，所述加热板包括中央副加热板和位于所述中央副加热板周围的至少一个外环副加热板; 绝热部件设置在中央辅助热板和外环副加热板之间以及两个相邻的外圈副加热板之间，从而可以通过热量有效地防止或减少相邻副加热板之间的热传导绝缘部件。本发明提供的加热板和使用该基板的基板处理设备可以有效补偿基板边缘区域的热损失，从而保持基板每个区域的加热速率相同。

69. 发明申请

US20110067632A1 STACKABLE MULTI-PORT GAS NOZZLES 有权
标题翻译：可堆叠多口气体喷嘴
公开(公告)号：US20110067632A1
公开(公告)日：2011-03-24
申请号：US12880941
申请日：2010-09-13
申请人： Steve Poppe , Yan Rozenzon , Peijun Ding
发明人： Steve Poppe , Yan Rozenzon , Peijun Ding
IPC分类号： C23C16/455 , C23C16/00 , C23C16/458
CPC分类号： C23C16/45576 , C23C16/4412 , C23C16/45521 , C23C16/4587
摘要： One embodiment provides a reactor for material deposition. The reactor includes a chamber and at least one gas nozzle. The chamber includes a pair of susceptors, each having a front side and a back side. The front side mounts a number of substrates. The susceptors are positioned vertically so that the front sides of the susceptors face each other, and the vertical edges of the susceptors are in contact with each other, thereby forming a substantially enclosed narrow channel between the substrates mounted on different susceptors. The gas nozzle includes a gas-inlet component situated in the center and a detachable gas-outlet component stacked around the gas-inlet component. The gas-inlet component includes at least one opening coupled to the chamber, and is configured to inject precursor gases into the chamber. The detachable gas-outlet component includes at least one opening coupled to the chamber, and is configured to output exhaust gases from the chamber.
摘要翻译：一个实施方案提供了用于材料沉积的反应器。反应器包括室和至少一个气体喷嘴。该室包括一对基座，每个基座具有前侧和后侧。前面安装了许多基板。基座垂直定位，使得基座的前侧彼此面对，并且基座的垂直边缘彼此接触，从而在安装在不同的基座上的基板之间形成基本封闭的窄通道。气体喷嘴包括位于中心的气体入口部件和在气体入口部件周围堆叠的可拆卸气体出口部件。气体入口部件包括耦合到腔室的至少一个开口，并且构造成将前体气体注入到腔室中。可拆卸的气体出口部件包括至少一个连接到该腔室的开口，并且构造成输出来自腔室的废气。

70. 发明授权

US07807030B2 Small scanned magentron 有权
标题翻译：小扫描魔术师
公开(公告)号：US07807030B2
公开(公告)日：2010-10-05
申请号：US11610849
申请日：2006-12-14
申请人： Ilyoung Richard Hong , James Tsung , Daniel Clarence Lubben , Peijun Ding , Nirmalya Maity
发明人： Ilyoung Richard Hong , James Tsung , Daniel Clarence Lubben , Peijun Ding , Nirmalya Maity
IPC分类号： C23C14/35
CPC分类号： H01J37/3455 , C23C14/345 , C23C14/35 , C23C14/355 , H01J37/3405 , H01J37/3408
摘要： A small magnet assembly having a magnet assembly of area less than 10% of the target area, is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target.
摘要翻译：具有面积小于目标区域的10％的磁体组件的小型磁体组件沿着包括围绕靶的中心轴线的轨道旋转的等离子体溅射的靶的背面以逆行星行星或行星路径扫描，围绕围绕目标中心轴线旋转的另一轴线的行星旋转。磁铁组件通过目标中心，从而允许全目标覆盖。相对于相应轴的两个旋转的适当选择的比率在目标周边附近产生比在目标中心附近更慢的磁体速度。齿轮行星机构包括旋转驱动板，固定中心齿轮和惰轮以及可驱动地支撑在驱动平面上的悬臂磁体组件的驱动平面中的从动齿轮。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式