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51. 发明授权

US07809042B2 Two-wavelength semiconductor laser device and its fabricating method 有权
标题翻译：双波长半导体激光器件及其制造方法
公开(公告)号：US07809042B2
公开(公告)日：2010-10-05
申请号：US12269583
申请日：2008-11-12
申请人： Kouji Makita , Takayuki Kashima
发明人： Kouji Makita , Takayuki Kashima
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , B82Y20/00 , H01S5/162 , H01S5/2004 , H01S5/2201 , H01S5/2231 , H01S5/3202 , H01S5/34313 , H01S5/34326 , H01S5/4087 , H01S2301/185
摘要： A two-wavelength semiconductor laser device includes a first semiconductor laser device including a first-conductivity type first cladding layer, a first guide layer made of AlGaAs mixed crystal, a first quantum well active layer having a barrier layer made of AlGaAs mixed crystal, a second guide layer made of AlGaAs mixed crystal, and a second-conductivity type second cladding layer, and a second semiconductor laser device including a first-conductivity type third cladding layer, a third guide layer made of AlGaInP mixed crystal, a second quantum well active layer having a barrier layer made of AlGaInP mixed crystal, a fourth guide layer made of AlGaInP mixed crystal, and a second-conductivity type fourth cladding layer. At least the barrier layer included in the first quantum well active layer, the first guide layer, and the second guide layer each have an Al molar ratio of more than 0.47 and 0.60 or less.
摘要翻译：双波长半导体激光器件包括：第一半导体激光器件，包括第一导电型第一包层，由AlGaAs混晶构成的第一引导层;具有由AlGaAs混晶构成的阻挡层的第一量子阱有源层; 由AlGaAs混晶构成的第二引导层和第二导电型第二覆层，以及包括第一导电型第三覆层，由AlGaInP混晶构成的第三引导层的第二半导体激光器件，第二量子阱活性具有由AlGaInP混晶构成的阻挡层的层，由AlGaInP混晶构成的第四引导层和第二导电型第四覆层。至少包含在第一量子阱活性层，第一引导层和第二引导层中的阻挡层各自具有大于0.47和0.60或更小的Al摩尔比。

52. 发明授权

US07809040B2 Red surface emitting laser element, image forming device, and image display apparatus 有权
标题翻译：红色表面发射激光元件，图像形成装置和图像显示装置
公开(公告)号：US07809040B2
公开(公告)日：2010-10-05
申请号：US12028562
申请日：2008-02-08
申请人： Tetsuya Takeuchi , Mamoru Uchida , Tomoyuki Miyamoto , Fumio Koyama
发明人： Tetsuya Takeuchi , Mamoru Uchida , Tomoyuki Miyamoto , Fumio Koyama
IPC分类号： H01S5/00
CPC分类号： H01S5/34326 , B82Y20/00 , H01S5/021 , H01S5/1039 , H01S5/18313 , H01S5/18358 , H01S5/2009 , H01S5/2013 , H01S5/2201 , H01S5/3072 , H01S5/3213 , H01S5/3436
摘要： A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.
摘要翻译：红色表面发射激光器元件包括第一反射器，包括p型半导体多层膜的第二反射器，第一反射器和第二反射器之间的有源层以及有源层和第二反射器之间的p型半导体间隔层反射器，p型半导体间隔层的厚度为100nm以上且350nm以下。

53. 发明申请

US20100219419A1 SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体元件及其制造方法
公开(公告)号：US20100219419A1
公开(公告)日：2010-09-02
申请号：US12161358
申请日：2007-08-08
申请人： Masayuki Hata , Yasuhiko Nomura
发明人： Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L33/02 , H01L21/50
CPC分类号： H01L33/483 , B82Y20/00 , H01L33/16 , H01S5/0202 , H01S5/0224 , H01S5/02268 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/2009 , H01S5/2027 , H01S5/22 , H01S5/2201 , H01S5/3202 , H01S5/34333
摘要： Provided is a semiconductor element which can suppress deterioration of element characteristics even when a semiconductor element section includes a plurality of directions having different thermal expansion coefficients within an in-plane direction. A semiconductor laser element (the semiconductor element) is provided with the semiconductor element section, which includes a direction of [1-100] and a direction of [0001] having different thermal expansion coefficients within the in-plane direction of a main surface, and a sub-mount, which includes an arrow (E) direction and an arrow (F) direction having different thermal expansion coefficients within the in-plane direction of the main surface. The semiconductor element section is bonded on the sub-mount so that the direction [1-100] of the semiconductor element section is close to the side of the arrow (E) direction than the arrow (F) direction of the sub-mount.
摘要翻译：提供了即使当半导体元件部分包括在面内方向上具有不同热膨胀系数的多个方向时，也可以抑制元件特性的劣化的半导体元件。半导体激光元件（半导体元件）具有半导体元件部，其包括在主表面的面内方向上具有不同热膨胀系数的[1-100]的方向和[0001]的方向，以及在主表面的面内方向上具有不同热膨胀系数的箭头（E）方向和箭头（F）方向的副底座。半导体元件部分接合在子安装座上，使得半导体元件部分的方向[1-100]接近于副安装座的箭头（E）方向的侧面。

54. 发明授权

US07773648B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07773648B2
公开(公告)日：2010-08-10
申请号：US11365531
申请日：2006-03-02
申请人： Koichi Tachibana , Shinji Saito , Shinya Nunoue
发明人： Koichi Tachibana , Shinji Saito , Shinya Nunoue
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/0281 , H01S5/0287 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/3216
摘要： Disclosed herein is a high-reliability semiconductor device. The laser diode includes: a substrate; a multi-layer film including a first conductivity type cladding layer provided on the substrate, a first conductivity type guide layer provided on the first conductivity type cladding layer, an active layer provided on the first conductivity type guide layer, a second conductivity type guide layer provided on the active layer, and a second conductivity type cladding layer provided on the second conductivity type guide layer, each of the layers being made of a nitride-based III-V group compound semiconductor; a first protective layer made of nitride and provided on a light emitting surface of the laser diode; and a second protective layer provided on the first protective layer and made of nitride having a refractive index different from that of the first protective layer.
摘要翻译：这里公开了高可靠性半导体器件。激光二极管包括：基板; 包括设置在基板上的第一导电型包覆层的多层膜，设置在第一导电型包覆层上的第一导电型引导层，设置在第一导电型引导层上的有源层，第二导电型引导层设置在所述有源层上，以及设置在所述第二导电型导向层上的第二导电型包覆层，所述层由氮化物系III-V族化合物半导体构成。由氮化物制成的第一保护层，设置在激光二极管的发光表面上; 以及设置在第一保护层上并由与第一保护层的折射率不同的折射率的氮化物制成的第二保护层。

55. 发明申请

US20100190283A1 METHOD TO FORM SEMICONDUCTOR LASER DIODE WITH MESA STRUCTURE BURIED BY CURRENT BLOCKING LAYER 有权
标题翻译：形成半导体激光二极管的方法与MESA结构由电流阻挡层
公开(公告)号：US20100190283A1
公开(公告)日：2010-07-29
申请号：US12692177
申请日：2010-01-22
申请人： Tomokazu KATSUYAMA
发明人： Tomokazu KATSUYAMA
IPC分类号： H01L21/20
CPC分类号： H01S5/227 , B82Y20/00 , H01L21/02543 , H01L21/02609 , H01S5/12 , H01S5/2086 , H01S5/2201 , H01S5/2206 , H01S5/2223 , H01S5/2275 , H01S5/305 , H01S5/3054 , H01S5/3211 , H01S5/34306 , H01S2304/04
摘要： A method to form a an LD with the buried mesa type is disclosed, in which the n-type current blocking layer is stably kept with a distance to the active layer in the buried mesa. The method of the invention includes a step to form the mesa by iterating the RIE and the ashing to obtain in a mesa side a steep edge with the (110) surface. A wet-etching process subsequent to the iterative etching and ashing removes residuals left on the mesa side. Then, the growth of the current blocking layer shows two modes of the horizontal growth of the (110) surface and the vertical growth of the (001) surface comparably.
摘要翻译：公开了一种形成具有埋地台面型的LD的方法，其中n型电流阻挡层在埋入台面中稳定地保持与活性层的距离。本发明的方法包括通过迭代RIE和灰化以在台面中获得具有（110）表面的陡峭边缘来形成台面的步骤。在迭代蚀刻和灰化之后的湿蚀刻工艺去除留在台面侧的残留物。然后，电流阻挡层的生长显示（110）表面的水平生长和（001）表面的垂直生长的两种模式相当。

56. 发明授权

US07764722B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US07764722B2
公开(公告)日：2010-07-27
申请号：US12033404
申请日：2008-02-19
申请人： Atsuo Michiue , Tomonori Morizumi , Hiroaki Takahashi
发明人： Atsuo Michiue , Tomonori Morizumi , Hiroaki Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0267 , H01S5/028 , H01S5/0282 , H01S5/0283 , H01S5/2201 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser element has a first nitride semiconductor layer, an active layer, a second nitride semiconductor layer, and a first protective film in contact with a cavity end face of the nitride semiconductor layer, wherein the first protective film in contact with at least the active layer of the cavity end face has a region thinner than the maximum thickness of the first protective film.
摘要翻译：氮化物半导体激光元件具有与氮化物半导体层的空腔端面接触的第一氮化物半导体层，有源层，第二氮化物半导体层和第一保护膜，其中，与至少接触的第一保护膜空腔端面的有源层具有比第一保护膜的最大厚度薄的区域。

57. 发明授权

US07736925B2 Method of fabricating nitride-based semiconductor laser diode 失效
标题翻译：制造氮化物基半导体激光二极管的方法
公开(公告)号：US07736925B2
公开(公告)日：2010-06-15
申请号：US11448800
申请日：2006-06-08
申请人： Tan Sakong , Youn-joon Sung , Ho-sun Paek
发明人： Tan Sakong , Youn-joon Sung , Ho-sun Paek
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0213 , H01S5/16 , H01S5/2201 , H01S5/34333 , H01S2304/12
摘要： A method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane is provided. The method includes the steps of: forming on a (0001) GaN (gallium nitride) substrate having at least two masks spaced apart by a distance equal to a laser cavity length in stripes that extend along the direction; growing an n-GaN layer on the GaN substrate between the masks so that two (1-100) edges of the n-GaN layer are thicker than the remaining regions thereof; sequentially stacking an n-clad layer, an active layer, and a p-clad layer on the n-GaN layer to form an edge-emitting laser cavity structure in which laser light generated in the active layer passes through a region of the n-clad layer aligned laterally with the active layer and is output; and etching a (1-100) plane of the laser cavity structure to form a cavity mirror plane.
摘要翻译：提供一种制造氮化物基半导体激光二极管的方法，其可以使腔镜面上的光吸收最小化并且改善腔镜面的表面粗糙度。该方法包括以下步骤：在（0001）GaN（氮化镓）衬底上形成具有至少两个掩模，该掩模间隔开等于沿着<11-20>方向延伸的条纹的激光器腔长度的距离; 在掩模之间的GaN衬底上生长n-GaN层，使得n-GaN层的两个（1-100）边缘比其余区域厚; 顺序地在n-GaN层上层叠n包覆层，有源层和p覆盖层，以形成边缘发射激光器腔结构，其中在有源层中产生的激光穿过n-GaN层的区域，包层与活性层横向排列并被输出; 并蚀刻激光腔结构的（1-100）面以形成腔镜面。

58. 发明申请

US20100127154A1 NITRIDE-BASED SEMICONDUCTOR LASER DEVICE AND OPTICAL PICKUP 审中-公开
标题翻译：基于氮化物的半导体激光器件和光学拾取器
公开(公告)号：US20100127154A1
公开(公告)日：2010-05-27
申请号：US12620252
申请日：2009-11-17
申请人： Shingo Kameyama
发明人： Shingo Kameyama
IPC分类号： G01J1/20 , H01S5/026
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/02212 , H01S5/028 , H01S5/0282 , H01S5/0287 , H01S5/2009 , H01S5/2201 , H01S5/305 , H01S5/3063
摘要： A nitride-based semiconductor laser device includes a facet coating film including an alteration preventing layer formed on a light reflecting side facet of a nitride-based semiconductor element layer and a reflectance control layer formed on the alteration preventing layer. The reflectance control layer is formed by a high refractive index layer and a low refractive index layer which are alternately stacked, the alteration preventing layer is constituted by stacking at least two layers, each of which is formed by a dielectric layer made of a nitride, an oxide or an oxynitride. The alteration preventing layer has a first layer made of a nitride in contact with the light reflecting side facet, and a thickness of each of the layers constituting the alteration preventing layer is smaller than that of the high refractive index layer and is smaller than that of the low refractive index layer.
摘要翻译：氮化物系半导体激光装置包括：具有形成在氮化物系半导体元件层的反射侧面上的防变色层和形成在防变色层上的反射率控制层的面涂膜。反射控制层由交替堆叠的高折射率层和低折射率层形成，防变色层由至少两层构成，每层由由氮化物构成的电介质层形成，氧化物或氧氮化物。防变色层具有由与光反射侧面接触的氮化物构成的第一层，构成防变色层的各层的厚度小于高折射率层的厚度，小于高折射率层的厚度低折射率层。

59. 发明授权

US07700963B2 Nitride semiconductor light-emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07700963B2
公开(公告)日：2010-04-20
申请号：US12216533
申请日：2008-07-07
申请人： Teruyoshi Takakura , Shigetoshi Ito , Takeshi Kamikawa
发明人： Teruyoshi Takakura , Shigetoshi Ito , Takeshi Kamikawa
IPC分类号： H01L33/00
CPC分类号： H01S5/3202 , B82Y20/00 , H01L33/007 , H01S5/0202 , H01S5/0207 , H01S5/0211 , H01S5/0425 , H01S5/2201 , H01S5/2214 , H01S5/34333
摘要： In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.
摘要翻译：在本发明的氮化物半导体发光元件的制造方法中，首先，准备形成有槽部的氮化物半导体基板。在包括沟槽部分的侧壁的氮化物半导体衬底上形成包括氮化物半导体的下层，使得下层在每个沟槽部分中具有晶体表面，并且晶体表面以相对于基板的表面为53.5°〜63.4°。在下层之上，形成由包含Al的下包层，有源层和含有Al的上包层组成的发光器件结构。根据本发明，在氮化物半导体衬底上堆积具有氮化物半导体的发光器件结构的层时发生的厚度不均匀性和表面平坦度不足，同时抑制裂纹的发生。

60. 发明申请

US20100080001A1 SEMICONDUCTOR LASER DEVICE AND DISPLAY 审中-公开
标题翻译：半导体激光器件和显示器
公开(公告)号：US20100080001A1
公开(公告)日：2010-04-01
申请号：US12568356
申请日：2009-09-28
申请人： Yasumitsu KUNOH , Yasuhiko NOMURA
发明人： Yasumitsu KUNOH , Yasuhiko NOMURA
IPC分类号： G02B27/18 , H01S5/30 , H01S5/20
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/2201 , H01S5/3202 , H01S5/3403 , H01S5/4087
摘要： This semiconductor laser device includes a substrate, a green semiconductor laser element, formed on a surface of the substrate, including a first active layer having a first major surface of a semipolar plane and a blue semiconductor laser element, formed on a surface of the substrate, including a second active layer having a second major surface of a surface of the semipolar plane, while the first active layer includes a first well layer having a compressive strain and having a thickness of at least about 3 nm, and the second active layer includes a second well layer having a compressive strain.
摘要翻译：该半导体激光器件包括形成在基板的表面上的基板，绿色半导体激光元件，其包括形成在基板的表面上的具有半极性面的第一主表面的第一有源层和蓝色半导体激光元件，包括具有半极性表面的第二主表面的第二有源层，而第一有源层包括具有至少约3nm的厚度的压缩应变的第一阱层，并且第二有源层包括具有压缩应变的第二阱层。

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