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1. 发明授权

US07764722B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US07764722B2
公开(公告)日：2010-07-27
申请号：US12033404
申请日：2008-02-19
申请人： Atsuo Michiue , Tomonori Morizumi , Hiroaki Takahashi
发明人： Atsuo Michiue , Tomonori Morizumi , Hiroaki Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0267 , H01S5/028 , H01S5/0282 , H01S5/0283 , H01S5/2201 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser element has a first nitride semiconductor layer, an active layer, a second nitride semiconductor layer, and a first protective film in contact with a cavity end face of the nitride semiconductor layer, wherein the first protective film in contact with at least the active layer of the cavity end face has a region thinner than the maximum thickness of the first protective film.
摘要翻译：氮化物半导体激光元件具有与氮化物半导体层的空腔端面接触的第一氮化物半导体层，有源层，第二氮化物半导体层和第一保护膜，其中，与至少接触的第一保护膜空腔端面的有源层具有比第一保护膜的最大厚度薄的区域。

2. 发明授权

US08102891B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US08102891B2
公开(公告)日：2012-01-24
申请号：US12716962
申请日：2010-03-03
申请人： Tomonori Morizumi , Atsuo Michiue , Hiroaki Takahashi
发明人： Tomonori Morizumi , Atsuo Michiue , Hiroaki Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/0281
摘要： A nitride semiconductor laser element includes a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order, a cavity end face formed by the nitride semiconductor layers, and a protective film formed on the cavity end face. The nitride semiconductor layers of the first and second conduction types have layers containing Al, and the active layer has layer containing In. The protective film has a region in which an axial orientation of crystals is the same as that of the cavity end face on the nitride semiconductor layers of the first and second conduction types, and has another region in which an axial orientation of crystals is different from that of the cavity end face on the active layer.
摘要翻译：氮化物半导体激光元件包括依次层叠具有第一导电类型，有源层和与第一导电类型不同的第二导电类型的氮化物半导体层的氮化物半导体层，空腔端面由氮化物半导体层和形成在腔体端面上的保护膜。第一和第二导电类型的氮化物半导体层具有包含Al的层，并且活性层具有包含In的层。保护膜具有其中晶体的轴向取向与第一和第二导电类型的氮化物半导体层上的空腔端面相同的区域，并且具有另一区域，其中晶体的轴向取向不同于活性层上的腔端面。

3. 发明授权

US07701995B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US07701995B2
公开(公告)日：2010-04-20
申请号：US12166746
申请日：2008-07-02
申请人： Tomonori Morizumi , Atsuo Michiue , Hiroaki Takahashi
发明人： Tomonori Morizumi , Atsuo Michiue , Hiroaki Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/0281
摘要： A nitride semiconductor laser element, comprises; nitride semiconductor layers in which a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order; a cavity end face formed by the nitride semiconductor layers; and a protective film formed on the cavity end face, the protective film has a region in which an axial orientation of crystals is different in the direction of lamination of the nitride semiconductor layers.
摘要翻译：一种氮化物半导体激光元件，包括：氮化物半导体层，其中第一导电类型的氮化物半导体层，有源层和与第一导电类型不同的第二导电类型的氮化物半导体层按顺序层压; 由氮化物半导体层形成的腔端面; 以及形成在空腔端面上的保护膜，保护膜具有在氮化物半导体层的层叠方向上晶体的轴向取向不同的区域。

4. 发明授权

US07668218B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US07668218B2
公开(公告)日：2010-02-23
申请号：US12033378
申请日：2008-02-19
申请人： Atsuo Michiue , Tomonori Morizumi , Hiroaki Takahashi
发明人： Atsuo Michiue , Tomonori Morizumi , Hiroaki Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0021 , H01S5/0282 , H01S5/0283 , H01S5/1082 , H01S5/2201 , H01S5/34333 , H01S2301/176 , H01S2304/04
摘要： The present invention provides a nitride semiconductor laser element, comprising: a nitride semiconductor structure having a first nitride semiconductor layer, a second nitride semiconductor layer, and an active layer provided between the first and second nitride semiconductor layers; a cavity end face provided to the nitride semiconductor structure; and a protective film having a hexagonal crystal structure, and having a first region provided on a first crystal surface of the nitride semiconductor structure in the cavity end face and a second region provided on a second crystal surface in the surface of at least one of the first and second nitride semiconductor layer, the first and second regions of the protective film are oriented in the same axial direction as that of the respective first and second crystal surfaces.
摘要翻译：本发明提供了一种氮化物半导体激光元件，包括：具有第一氮化物半导体层，第二氮化物半导体层和设置在第一和第二氮化物半导体层之间的有源层的氮化物半导体结构; 设置到所述氮化物半导体结构的腔端面; 以及具有六方晶系结构的保护膜，并且具有设置在所述空腔端面中的所述氮化物半导体结构的第一晶面上的第一区域和设置在所述第二晶体表面中的至少一个第一和第二氮化物半导体层，保护膜的第一和第二区域被定向在与第一和第二晶体表面相同的轴向方向上。

5. 发明授权

US07646798B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US07646798B2
公开(公告)日：2010-01-12
申请号：US11963825
申请日：2007-12-22
申请人： Atsuo Michiue , Tomonori Morizumi , Hiroaki Takahashi
发明人： Atsuo Michiue , Tomonori Morizumi , Hiroaki Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , B82Y20/00 , H01L33/44 , H01S5/0281 , H01S5/0282 , H01S5/22 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser element comprises; a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and a protective film formed on at least one end face of the cavity, wherein the protective film is formed of a first film with a crystal structure that has the same axial orientation as that of the nitride semiconductor layer constituting the end face of the cavity, and a second film with a crystal structure that has a different axial orientation from that of the first film, in this order from the side of the end face.
摘要翻译：氮化物半导体激光元件包括：氮化物半导体层，其包括第一氮化物半导体层，有源层和第二氮化物半导体层，并且具有端面的空腔和形成在空腔的至少一个端面上的保护膜，其中所述保护膜由具有与构成空腔的端面的氮化物半导体层相同的轴向定向的晶体结构的第一膜形成，并且具有晶体结构的第二膜具有与第一部电影，从这个顺序从端面的一面。

6. 发明申请

US20090010294A1 NITRIDE SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US20090010294A1
公开(公告)日：2009-01-08
申请号：US12166746
申请日：2008-07-02
申请人： Tomonori Morizumi , Atsuo Michiue , Hiroaki Takahashi
发明人： Tomonori Morizumi , Atsuo Michiue , Hiroaki Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/0281
摘要： A nitride semiconductor laser element, comprises; nitride semiconductor layers in which a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order; a cavity end face formed by the nitride semiconductor layers; and a protective film formed on the cavity end face, the protective film has a region in which an axial orientation of crystals is different in the direction of lamination of the nitride semiconductor layers.
摘要翻译：一种氮化物半导体激光元件，包括：氮化物半导体层，其中第一导电类型的氮化物半导体层，有源层和与第一导电类型不同的第二导电类型的氮化物半导体层按顺序层压; 由氮化物半导体层形成的腔端面; 以及形成在空腔端面上的保护膜，保护膜具有在氮化物半导体层的层叠方向上晶体的轴向取向不同的区域。

7. 发明申请

US20080181274A1 NITRIDE SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US20080181274A1
公开(公告)日：2008-07-31
申请号：US11963825
申请日：2007-12-22
申请人： Atsuo Michiue , Tomonori Morizumi , Hiroaki Takahashi
发明人： Atsuo Michiue , Tomonori Morizumi , Hiroaki Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , B82Y20/00 , H01L33/44 , H01S5/0281 , H01S5/0282 , H01S5/22 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser element comprises; a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and a protective film formed on at least one end face of the cavity, wherein the protective film is formed of a first film with a crystal structure that has the same axial orientation as that of the nitride semiconductor layer constituting the end face of the cavity, and a second film with a crystal structure that has a different axial orientation from that of the first film, in this order from the side of the end face.
摘要翻译：氮化物半导体激光元件包括：氮化物半导体层，其包括第一氮化物半导体层，有源层和第二氮化物半导体层，并且具有端面的空腔和形成在空腔的至少一个端面上的保护膜，其中所述保护膜由具有与构成空腔的端面的氮化物半导体层相同的轴向定向的晶体结构的第一膜形成，并且具有晶体结构的第二膜具有与第一部电影，从这个顺序从端面的一面。

8. 发明授权

US10703114B2 Printing device and printing method 有权
公开(公告)号：US10703114B2
公开(公告)日：2020-07-07
申请号：US16426481
申请日：2019-05-30
申请人： Kiminori Masuda , Hiroaki Takahashi , Mio Akima
发明人： Kiminori Masuda , Hiroaki Takahashi , Mio Akima
IPC分类号： B41J11/00 , C09D11/101 , C09D11/023
摘要： A printing device includes an ink container accommodating a liquid containing a clear ink containing water and a resin, a discharging head to discharge the clear ink directly or indirectly onto a substrate to form a printing layer, and a heating device to heat the substrate, wherein the following relationship is satisfied: Tlow (degrees C.)>Thigh (degrees C.), where Tlow (degrees C.) represents the temperature of the substrate that the heating device is heating during printing in a low gloss printing mode and Thigh (degrees C.) represents the temperature of the substrate that the heating device is heating during printing in a high gloss printing mode, wherein the following relationships are satisfied: in the high gloss printing mode, Gp≥Gm and, in the low gloss printing mode, Gm≥Gp, where Gm represents the gloss level of the substrate and Gp represents the gloss level of the printing layer.

9. 发明申请

US20180170061A1 CLEANING LIQUID, CONTAINER, INKJET PRINTING METHOD, INKJET PRINTING DEVICE, AND SET OF INK AND CLEANING LIQUID 审中-公开
公开(公告)号：US20180170061A1
公开(公告)日：2018-06-21
申请号：US15842003
申请日：2017-12-14
申请人： Yuta NAKAMURA , Michihiko Namba , Masahiro Kido , Hiroaki Takahashi , Hikaru Kobayashi , Naoto Shimura , Akiko Bannai , Shizuka Kohzuki
发明人： Yuta NAKAMURA , Michihiko Namba , Masahiro Kido , Hiroaki Takahashi , Hikaru Kobayashi , Naoto Shimura , Akiko Bannai , Shizuka Kohzuki
IPC分类号： B41J2/165 , C11D7/50 , C09D11/322
CPC分类号： B41J2/16552 , C09D11/102 , C09D11/322 , C09D11/38 , C09D11/40 , C09D11/54 , C11D7/5022
摘要： A cleaning liquid for rinsing an ink adhering to an article includes water and a first organic solvent, wherein a liquid mixture of the water and the first organic solvent has a Hansen solubility parameter including a hydrogen bond term of 10.0 (cal/cm3)1/2 or less, wherein the ink includes water, a second organic solvent, a polyurethane resin particle, and a polysiloxane surfactant having an HLB value of 8 or less, wherein the polyurethane resin particle accounts for 5 percent by mass or more of a total amount of the ink.

10. 发明授权

US09625858B2 Intermediate transfer belt, and image forming apparatus using the belt 有权
公开(公告)号：US09625858B2
公开(公告)日：2017-04-18
申请号：US15049697
申请日：2016-02-22
申请人： Akira Izutani , Hideaki Yasunaga , Makoto Matsushita , Hiroaki Takahashi , Keiichiro Juri , Ayano Momose , Yuri Haga
发明人： Akira Izutani , Hideaki Yasunaga , Makoto Matsushita , Hiroaki Takahashi , Keiichiro Juri , Ayano Momose , Yuri Haga
IPC分类号： G03G15/16
CPC分类号： G03G15/162 , G03G2215/1623
摘要： An intermediate transfer belt includes a thermoplastic resin and a fibrous material. The fibrous material has an orientation angle Fa of from 5° to 30° in a direction perpendicular to a circumferential direction of the intermediate transfer belt.

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