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51. 发明申请

US20100093184A1 Method for making a metal oxide layer 审中-公开
标题翻译：制造金属氧化物层的方法
公开(公告)号：US20100093184A1
公开(公告)日：2010-04-15
申请号：US12588367
申请日：2009-10-14
申请人： Tai-Bor Wu , Cheng-Hao Hou
发明人： Tai-Bor Wu , Cheng-Hao Hou
IPC分类号： H01L21/316
CPC分类号： H01L21/0228 , C23C16/405 , C23C16/45534 , C23C16/45536 , H01L21/02181 , H01L21/02205 , H01L21/02274 , H01L21/02337 , H01L21/28194 , H01L21/3141 , H01L21/31645 , H01L29/517
摘要： A method for making a metal oxide layer includes: (a) exposing a substrate having oxygen-containing reaction sites to an environment of a first precursor of an organometallic compound, which contains a metal atom and ligand groups, so as to form a chemisorption layer of the first precursor on the substrate; (b) exposing the chemisorption layer on the substrate to a non-free radical environment of a second precursor after step (a) so as to remove the ligand groups of the chemisorption layer that are unreacted in step (a) and so as to convert the chemisorption layer into a metal oxide layer; and (c) after step (b), exposing the metal oxide layer on the substrate to a free radical-containing gas containing free radicals so as to remove the ligand groups of the chemisorption layer that are left unreacted in step (b).
摘要翻译：制造金属氧化物层的方法包括：（a）将具有含氧反应位点的底物暴露于含有金属原子和配体基团的有机金属化合物的第一前体的环境中，以形成化学吸附层的基质上的第一种前体; （b）在步骤（a）之后将底物上的化学吸附层暴露于第二前体的非自由基环境，以除去步骤（a）中未反应的化学吸附层的配体基团，以便转化化学吸附层转化为金属氧化物层; 和（c）在步骤（b）之后，将衬底上的金属氧化物层暴露于含有自由基的含自由基的气体中，以去除在步骤（b）中未反应的化学吸附层的配体基团。

52. 发明申请

US20100062149A1 METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS 审中-公开
标题翻译：在原子层沉积过程中调节沉积速率的方法
公开(公告)号：US20100062149A1
公开(公告)日：2010-03-11
申请号：US12465471
申请日：2009-05-13
申请人： Paul Ma , Joseph F. Aubuchon , Jiang Lu , Mei Chang
发明人： Paul Ma , Joseph F. Aubuchon , Jiang Lu , Mei Chang
IPC分类号： B05D5/12
CPC分类号： H01L21/76841 , C23C16/45534 , C23C16/52
摘要： Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).
摘要翻译：本发明的实施例提供了在诸如原子层沉积（ALD）工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。在一个实施例中，提供了一种方法，其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体，并且连续地或周期地将衬底暴露于处理气体之前到和/或在ALD过程期间。可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。在一个实例中，氮化钽沉积在衬底上，并且烷基氨基金属前体气体包含钽前体，例如五（二甲基氨基）钽（PDMAT）），第二前体气体含有氮前体如氨，并且处理气体含有二甲胺（DMA）。

53. 发明申请

US20090283038A1 FILM FORMING METHOD AND APPARATUS 审中-公开
标题翻译：电影制作方法和装置
公开(公告)号：US20090283038A1
公开(公告)日：2009-11-19
申请号：US12509872
申请日：2009-07-27
申请人： Isao Gunji , Yumiko Kawano
发明人： Isao Gunji , Yumiko Kawano
IPC分类号： C23C16/00
CPC分类号： H01L21/28562 , C23C16/16 , C23C16/18 , C23C16/34 , C23C16/452 , C23C16/45534 , C23C16/45548 , C23C16/45557 , C23C16/46
摘要： A film forming method, for depositing a thin film on a surface of a substrate mounted on a mounting table disposed in a vacuum processing chamber, includes an adsorption process for adsorbing a film forming material on the substrate by introducing a source gas into the processing chamber; and a reaction process for carrying out a film forming reaction, after the adsorption process, by introducing an energy transfer gas into the processing chamber and supplying thermal energy to the film forming material adsorbed on the substrate. By repeating the above process, the thin film is formed on the substrate in a layer-by-layer manner.
摘要翻译：一种薄膜形成方法，用于在安装在设置在真空处理室中的安装台上的基板的表面上沉积薄膜，包括通过将源气体引入处理室中而将成膜材料吸附在基板上的吸附工艺 ; 以及在吸附过程之后，通过将能量转移气体引入处理室并向吸附在基板上的成膜材料提供热能的反应方法进行成膜反应。通过重复上述处理，薄膜以层叠方式形成在基板上。

54. 发明授权

US07611751B2 Vapor deposition of metal carbide films 有权
标题翻译：金属碳化物膜的气相沉积
公开(公告)号：US07611751B2
公开(公告)日：2009-11-03
申请号：US11591845
申请日：2006-11-01
申请人： Kai-Erik Elers
发明人： Kai-Erik Elers
IPC分类号： C23C16/00
CPC分类号： C23C16/32 , C23C16/45527 , C23C16/45534 , C23C16/45542
摘要： Methods of forming metal carbide thin films are provided. According to preferred embodiments, metal carbide thin films are formed in an atomic layer deposition (ALD) process by alternately and sequentially contacting a substrate in a reaction space with spatially and temporally separated vapor phase pulses of a metal source chemical, a reducing agent and a carbon source chemical. The reducing agent is preferably selected from the group consisting of excited species of hydrogen and silicon-containing compounds.
摘要翻译：提供了形成金属碳化物薄膜的方法。根据优选实施例，通过交替地和顺序地将反应空间中的衬底与金属源化学品，还原剂和还原剂的空间和时间分离的气相脉冲交替地和顺序地接触，在原子层沉积（ALD）工艺中形成金属碳化物薄膜碳源化学品。还原剂优选选自氢和含硅化合物的激发物质。

55. 发明授权

US07608539B2 ALD method and apparatus 失效
标题翻译： ALD方法和装置
公开(公告)号：US07608539B2
公开(公告)日：2009-10-27
申请号：US11820460
申请日：2007-06-18
申请人： Ofer Sneh
发明人： Ofer Sneh
IPC分类号： H01L21/02
CPC分类号： C23C16/45529 , C23C16/02 , C23C16/14 , C23C16/306 , C23C16/34 , C23C16/40 , C23C16/402 , C23C16/403 , C23C16/405 , C23C16/45534
摘要： A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substrates and devices that are moisture- and oxygen-sensitive. ALD films, such as oxides, nitrides, semiconductors and metals, are efficiently and cost-effectively deposited from conventional metal precursors and activated nonmetal sources. Additionally, substrate preparation methods for optimized ALD are disclosed.
摘要翻译：提出了一种用于在低温下执行有效且具有成本效益的原子层沉积（ALD）的方法和装置。 ALD膜例如氧化物和氮化物是在可控和温和的氧化条件下在低温和低湿度和氧敏感的器件上制备的。 ALD膜，例如氧化物，氮化物，半导体和金属，从传统的金属前体和活化的非金属源有效且经济地沉积。另外，公开了优化ALD的底物制备方法。

56. 发明申请

US20090246375A1 METHOD FOR FORMING TANTALUM NITRIDE FILM 有权
标题翻译：形成氮化钛薄膜的方法
公开(公告)号：US20090246375A1
公开(公告)日：2009-10-01
申请号：US11885399
申请日：2006-03-03
申请人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo
发明人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo
IPC分类号： C23C16/00
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/45525 , C23C16/45534 , C23C16/45536 , C23C16/4554 , C23C16/45553 , H01L21/28562
摘要： A tantalum nitride film-forming method comprises the steps of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms), and a halogen gas into a vacuum chamber; and reacting these components with one another on a substrate to thus form a surface adsorption film comprising a mono-atomic or multi (several)-atomic layer and composed of a compound represented by the following general formula: TaNx(Hal)y(R, R′)z (in the formula, Hal represents a halogen atom), then introducing radicals generated from an H atom-containing compound to thus remove Ta—N bonds present in the resulting compound through breakage thereof and remove, at the same time, the remaining R(R′) groups bonded to the N atoms present in the compound through the cleavage thereof and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译：氮化钽膜形成方法包括以下步骤：引入由具有由以下通式表示的配位配体的元素钽（Ta）构成的配位化合物构成的原料气体：N-（R，R'）（式 R和R'可以相同或不同，各自表示碳原子数1〜6的烷基），卤素气体进入真空室; 并将这些组分彼此反应在基底上，从而形成包含单原子或多（多个）原子层的表面吸附膜，并由以下通式表示的化合物组成：TaNx（Hal）y（R， R'）z（式中，Hal表示卤素原子），然后引入由含H原子的化合物产生的自由基，从而通过其残留除去所得化合物中存在的Ta-N键，同时除去剩余的R（R'）基团通过其切割而与化合物中存在的N原子键合，从而形成富含钽原子的氮化钽膜。所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高：Ta / N可以确保足够高的附着线分布线形成膜，因此可用作阻挡膜。此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。

57. 发明申请

US20090112009A1 AMORPHOUS GE/TE DEPOSITION PROCESS 有权
标题翻译：非晶态GE / TE沉积工艺
公开(公告)号：US20090112009A1
公开(公告)日：2009-04-30
申请号：US12263403
申请日：2008-10-31
申请人： Philip S.H. Chen , William Hunks , Tianniu Chen , Matthias Stender , Chongying Xu , Jeffrey F. Roeder , Weimin Li
发明人： Philip S.H. Chen , William Hunks , Tianniu Chen , Matthias Stender , Chongying Xu , Jeffrey F. Roeder , Weimin Li
IPC分类号： H01L21/8246 , B32B15/00 , C07F7/30
CPC分类号： C07F7/30 , C23C16/305 , C23C16/448 , C23C16/45534 , C23C16/45542 , C23C16/56 , H01L45/06 , H01L45/144 , H01L45/1616 , Y10T428/31678
摘要： Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2}2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.
摘要翻译：锗，碲和/或锑前体有用地用于形成含锗，碲和/或锑的膜，例如GeTe，GST和含有热电锗的膜的膜。还描述了使用这些前体形成非晶膜的方法。进一步描述的是使用[{nBuC（iPrN）2} 2Ge]或Ge偕丁酰胺形成用于相变存储器应用的GeTe平滑非晶膜。

58. 发明授权

US07465666B2 Method for forming tungsten materials during vapor deposition processes 有权
标题翻译：在气相沉积工艺中形成钨材料的方法
公开(公告)号：US07465666B2
公开(公告)日：2008-12-16
申请号：US11766121
申请日：2007-06-21
申请人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
发明人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
IPC分类号： H01L21/44
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.
摘要翻译：在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热到沉积温度，并将衬底依次暴露于乙硼烷和钨前体气体，以形成在原子层沉积（ALD）过程中在基底上形成钨成核层。该方法进一步提供将衬底暴露于包含氢气和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。提供了包括可以在相同沉积室或不同沉积室中进行的ALD和CVD工艺的实例。

59. 发明授权

US07419903B2 Thin films 有权
标题翻译：薄膜
公开(公告)号：US07419903B2
公开(公告)日：2008-09-02
申请号：US11106220
申请日：2005-04-13
申请人： Suvi P. Haukka , Ivo Raaijmakers , Wei Min Li , Juhana Kostamo , Hessel Sprey
发明人： Suvi P. Haukka , Ivo Raaijmakers , Wei Min Li , Juhana Kostamo , Hessel Sprey
IPC分类号： H01L21/4763
CPC分类号： C23C16/029 , C23C16/34 , C23C16/401 , C23C16/403 , C23C16/405 , C23C16/452 , C23C16/45529 , C23C16/45531 , C23C16/45534 , C30B25/14 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28562 , H01L21/3141 , H01L21/3145 , H01L21/31612 , H01L21/3162 , H01L21/31641 , H01L21/3185 , H01L21/76846 , H01L21/76873 , H01L21/76879 , H01L29/513 , H01L29/517 , H01L29/518 , H01L2221/1089
摘要： Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g., in separate pulses, and the copper source pulses can gradually increase in frequency, forming a transition region, until pure copper is formed at the upper surface. Advantageously, graded compositions in these and a variety of other contexts help to avoid such problems as etch rate control, electromigration and non-ohmic electrical contact that can occur at sharp material interfaces. In some embodiments additional seed layers or additional transition layers are provided.
摘要翻译：通过原子层沉积形成薄膜，由此膜的组成可以在包括自限制化学的交替脉冲的循环期间从单层变为单层。在所示实施例中，在循环过程中引入了不同量的杂质源。因此，即使对于非常薄的层也提供了渐变栅极电介质。薄的2nm的栅极电介质可以从纯氧化硅到氧氮化物变化为氮化硅。类似地，栅极电介质可以从氧化铝到氧化铝和较高介电材料（例如ZrO 2）的混合物变化为纯高k材料并返回到氧化铝。在另一个实施例中，金属氮化物（例如，WN）首先形成为用于衬里双镶嵌沟槽和通孔的屏障。在交替沉积工艺期间，铜可以被引入，例如分开的脉冲，并且铜源脉冲可以逐渐增加频率，形成过渡区域，直到在上表面形成纯铜。有利的是，这些和各种其他情况下的分级组合物有助于避免诸如在尖锐材料界面处可能发生的蚀刻速率控制，电迁移和非欧姆电接触等问题。在一些实施例中，提供了额外的种子层或附加的过渡层。

60. 发明申请

US20080113096A1 METHOD OF DEPOSITING CATALYST ASSISTED SILICATES OF HIGH-K MATERIALS 有权
标题翻译：沉积催化剂辅助高K材料的硅酸盐的方法
公开(公告)号：US20080113096A1
公开(公告)日：2008-05-15
申请号：US11559486
申请日：2006-11-14
申请人： MAITREYEE MAHAJANI
发明人： MAITREYEE MAHAJANI
IPC分类号： C23C16/06
CPC分类号： C23C16/45546 , C23C16/401 , C23C16/45525 , C23C16/45534
摘要： A high-k silicate atomic layer deposition method is disclosed. To produce a hafnium silicate layer, a substrate may be exposed to a pulse of a hafnium precursor, a pulse of an oxidizer, a pulse of a silicon precursor, and a pulse of another oxidizer. A catalyst may additionally be co-flowed with one or more reactants into the chamber through a separate inlet. Alternatively, the catalyst may be flowed to the chamber before the reactant is introduced in a soaking procedure. By either co-flowing the catalyst through separate inlets or by performing a catalyst soak, hafnium silicate formation may proceed at a fast rate and/or at a low temperature.
摘要翻译：公开了一种高k硅酸盐原子层沉积方法。为了生产硅酸铪层，可以将衬底暴露于铪前体的脉冲，氧化剂的脉冲，硅前体的脉冲和另一氧化剂的脉冲。另外可以通过单独的入口将催化剂与一种或多种反应物共同流入室中。或者，在反应物以浸泡方法引入之前，催化剂可以流到室。通过使催化剂通过单独的入口共同流动或通过进行催化剂浸泡，可以以快速速率和/或低温进行硅酸铪形成。

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