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51. 发明授权

US5889678A Topography simulation method 失效
标题翻译：地形模拟方法
公开(公告)号：US5889678A
公开(公告)日：1999-03-30
申请号：US855814
申请日：1997-05-12
申请人： Soichi Inoue , Satoshi Tanaka , Shoji Mimotogi , Yasunobu Onishi
发明人： Soichi Inoue , Satoshi Tanaka , Shoji Mimotogi , Yasunobu Onishi
IPC分类号： G03F7/20 , G06F17/50 , H01L21/00 , H01L21/027
CPC分类号： G06F17/5018
摘要： In a topography simulation method, the topography of a resist pattern after curing treatment can be precisely estimated without producing a complex physical model or performing parameter measurement. Specifically, in the method of estimating the topography of a resist pattern, which is formed by selectively removing a part of a resist provided on a substrate and contracts due to curing treatment, the resist pattern is divided into a plurality of cells and the cells are contracted in accordance with a volume shrinkage amount per unit volume of the resist in the curing treatment. Then, the cells located closer to an interface between the substrate and the resist pattern are flattened to a higher degree in parallel to the substrate, and the deformed cells are brought together toward a shrinkage reference line passing through a center of a line pattern and toward the substrate.
摘要翻译：在地形模拟方法中，可以精确地估计固化处理后的抗蚀剂图案的形貌，而不产生复杂的物理模型或进行参数测量。具体地，在通过选择性地去除设置在基板上的抗蚀剂的一部分并且由于固化处理而收缩而形成的抗蚀剂图案的形貌的估计方法中，抗蚀剂图案被分成多个单元，并且单元是根据固化处理中的抗蚀剂的单位体积的体积收缩量收缩。然后，更靠近基板和抗蚀剂图案之间的界面的单元平行于基板平坦化，并且将变形的单元一起朝向通过线图案的中心的收缩参考线并朝向底物。

52. 发明申请

US20110294239A1 SUB-RESOLUTION ASSIST FEATURE ARRANGING METHOD AND COMPUTER PROGRAM PRODUCT AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：分解辅助功能安装方法和计算机程序产品和半导体器件的制造方法
公开(公告)号：US20110294239A1
公开(公告)日：2011-12-01
申请号：US13051961
申请日：2011-03-18
申请人： Chikaaki KODAMA , Toshiya Kotani , Shigeki Nojima , Shoji Mimotogi
发明人： Chikaaki KODAMA , Toshiya Kotani , Shigeki Nojima , Shoji Mimotogi
IPC分类号： H01L21/66 , G06F17/50
CPC分类号： G03F1/36
摘要： According to a sub-resolution assist feature arranging method in embodiments, it is selected which of a rule base and a model base is set for which pattern region on pattern data corresponding to a main pattern as a type of the method of arranging the sub-resolution assist feature for improving resolution of the main pattern formed on a substrate. Then, the sub-resolution assist feature by the rule base is arranged in a pattern region set as the rule base and the sub-resolution assist feature by the model base is arranged in a pattern region set as the model base.
摘要翻译：根据实施例中的子分辨率辅助特征排列方法，选择规则库和模型库中的哪一个被设置为对应于主图案的图案数据上的哪个图案区域作为安排子图形的方法的类型，分辨率辅助功能，用于提高在基板上形成的主图案的分辨率。然后，将规则库的子分辨率辅助特征设置在设置为规则库的图案区域中，并且由模型库将子分辨率辅助特征排列在设置为模型库的图案区域中。

53. 发明申请

US20110224934A1 EVALUATING APPARATUS, EVALUATING METHOD, AND COMPUTER PROGRAM PRODUCT 审中-公开
标题翻译：评估设备，评估方法和计算机程序产品
公开(公告)号：US20110224934A1
公开(公告)日：2011-09-15
申请号：US12882998
申请日：2010-09-15
申请人： Seiro Miyoshi , Hideaki Abe , Kazuhiro Takahata , Masafumi Asano , Shoji Mimotogi , Tomoko Ojima , Masanari Kajiwara
发明人： Seiro Miyoshi , Hideaki Abe , Kazuhiro Takahata , Masafumi Asano , Shoji Mimotogi , Tomoko Ojima , Masanari Kajiwara
IPC分类号： G06F19/00
CPC分类号： G03F7/70625 , G03F7/70525 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, an evaluating apparatus includes a resist-pattern-data acquiring unit and an evaluating unit. The resist-pattern-data acquiring unit acquires resist pattern data having a plurality of feature values including at least two among a hole diameter measured concerning a pattern for hole formation in the resist pattern, an aspect ratio of the hole diameter, and a difference of hole diameters at a plurality of signal thresholds. The evaluating unit calculates an evaluation value using an evaluation function for evaluating whether a hole pattern formed on a processing target by using the pattern for hole formation is unopened and the resist pattern data and evaluates presence or absence of a risk that the hole pattern is unopened.
摘要翻译：根据一个实施例，评估装置包括抗蚀剂图案数据获取单元和评估单元。抗蚀剂图案数据获取单元获取具有多个特征值的抗蚀剂图案数据，所述多个特征值包括测量的关于抗蚀剂图案中的孔形成图案的孔直径，孔直径的纵横比和孔径在多个信号阈值。评价单元使用评价函数来计算评价值，该评价函数用于评估是否未打开通过使用用于形成孔的图案而形成在处理对象上的孔图案，并且抵抗图案数据并评估是否存在未打开孔图案的风险。

54. 发明授权

US07912275B2 Method of evaluating a photo mask and method of manufacturing a semiconductor device 有权
标题翻译：评估光掩模的方法和制造半导体器件的方法
公开(公告)号：US07912275B2
公开(公告)日：2011-03-22
申请号：US12360929
申请日：2009-01-28
申请人： Hiroki Yamamoto , Masamitsu Itoh , Osamu Ikenaga , Shoji Mimotogi , Hideki Kanai , Yukiyasu Arisawa
发明人： Hiroki Yamamoto , Masamitsu Itoh , Osamu Ikenaga , Shoji Mimotogi , Hideki Kanai , Yukiyasu Arisawa
IPC分类号： G06K9/00 , G03F1/00
CPC分类号： G03F1/84
摘要： A method of evaluating a photo mask, includes measuring each dimension of a plurality of pattern portions of a mask pattern formed on a photo mask, obtaining an inter-pattern distance between the pattern portion and a pattern different from the pattern portion with respect to each of the pattern portions, obtaining a dimensional difference between the measured dimension of the pattern portion and a target dimension of the pattern portion with respect to each of the pattern portions, grouping the dimensional difference obtained for each pattern portion into a plurality of groups in accordance with the inter-pattern distance obtained for each pattern portion, obtaining an evaluation value based on the dimensional difference in each group with respect to each of the groups, and evaluating the photo mask based on the evaluation value.
摘要翻译：一种评估光掩模的方法，包括测量形成在光掩模上的掩模图案的多个图案部分的每个尺寸，获得图案部分与不同于图案部分的图案之间的图案间距离获得图形部分的测量尺寸与图案部分相对于每个图案部分的目标尺寸之间的尺寸差，将根据每个图案部分获得的尺寸差分成多组对于每个图案部分获得的图案间距离，基于每个组中的每个组的尺寸差获得评估值，并且基于评估值来评估光罩。

55. 发明授权

US07636910B2 Photomask quality estimation system and method for use in manufacturing of semiconductor device, and method for manufacturing the semiconductor device 失效
标题翻译：用于制造半导体器件的光掩模质量估计系统和方法以及半导体器件的制造方法
公开(公告)号：US07636910B2
公开(公告)日：2009-12-22
申请号：US11475075
申请日：2006-06-27
申请人： Yukiyasu Arisawa , Tadahito Fujisawa , Shoji Mimotogi
发明人： Yukiyasu Arisawa , Tadahito Fujisawa , Shoji Mimotogi
IPC分类号： G06F17/50
CPC分类号： G03F1/84
摘要： A photomask quality estimation system comprises a measuring unit, a latitude computation unit and an estimation unit. The measuring unit measures the mask characteristic of each of a plurality of chip patterns formed on a mask substrate. The latitude computation unit computes the exposure latitude of each chip pattern based on the mask characteristic. The estimation unit estimates the quality of each chip pattern based on the exposure latitude.
摘要翻译：光掩模质量估计系统包括测量单元，纬度计算单元和估计单元。测量单元测量形成在掩模基板上的多个芯片图案中的每一个的掩模特性。纬度计算单元基于掩模特性来计算每个码片模式的曝光宽容度。估计单元基于曝光宽容度估计每个芯片图案的质量。

56. 发明申请

US20090019418A1 Lithography simulation method, mask pattern preparation method, semiconductor device manufacturing method and recording medium 失效
标题翻译：光刻模拟法，掩模图案制备方法，半导体器件制造方法和记录介质
公开(公告)号：US20090019418A1
公开(公告)日：2009-01-15
申请号：US12222479
申请日：2008-08-11
申请人： Toshiya Kotani , Shigeki Nojima , Shoji Mimotogi
发明人： Toshiya Kotani , Shigeki Nojima , Shoji Mimotogi
IPC分类号： G06F17/50 , G06K9/00
CPC分类号： G03F7/70433 , G03F7/705
摘要： A lithography simulation method includes: taking in design data of a pattern to be formed on a substrate and mask data to prepare a mask pattern used in forming a latent image of the pattern on the substrate by transmission of an energy ray; obtaining the latent image of the pattern by calculation of an intensity of the energy ray; locally changing, at least in a portion corresponding to a pattern to be interested, a relative position in a direction of the intensity of the energy ray between a latent image curve and a reference intensity line in accordance with a distance between the pattern to be interested and a pattern of a neighboring region, the latent image curve being an intensity distribution curve of the energy ray constituting the latent image, the reference intensity line being defined to specify a position of an edge of the pattern to be interested; and calculating a distance between intersections of a portion of the latent image curve corresponding to the pattern to be interested and the reference intensity line in the changed relative position to define an interested line width of the pattern to be interested.
摘要翻译：光刻模拟方法包括：获取要在基板上形成的图案的设计数据，并且掩模数据，以通过透射能量线来制备用于在基板上形成图案的潜像所使用的掩模图案; 通过计算能量射线的强度来获得图案的潜像; 至少在与感兴趣的图案对应的部分中，根据感兴趣的图案之间的距离，在潜像图像曲线和参考强度线之间的能量射线的强度的方向上的相对位置以及相邻区域的图案，所述潜像曲线是构成所述潜像的能量射线的强度分布曲线，所述基准强度线被定义为指定所述图案的边缘的位置; 以及计算与感兴趣的图案对应的潜在图像曲线的一部分的交点与变化的相对位置中的基准强度线之间的距离，以定义感兴趣的图案的感兴趣的线宽。

57. 发明授权

US07446852B2 Projection exposure mask acceptance decision system, projection exposure mask acceptance decision method, method for manufacturing semiconductor device, and computer program project 失效
标题翻译：投影曝光掩模验收决策系统，投影曝光掩模验收决策方法，半导体器件制造方法和计算机程序项目
公开(公告)号：US07446852B2
公开(公告)日：2008-11-04
申请号：US11653279
申请日：2007-01-16
申请人： Yukiyasu Arisawa , Shoji Mimotogi , Shigeru Hasebe
发明人： Yukiyasu Arisawa , Shoji Mimotogi , Shigeru Hasebe
IPC分类号： G03B27/68 , G03B27/52 , G03F1/00
CPC分类号： G03F1/84 , G03F7/705 , G03F7/70525
摘要： A projection exposure mask acceptance decision system includes assurance object measuring unit to measure quality assurance objects relating to projection exposure mask, first exposure characteristic deterioration quantity calculating unit to calculate first exposure characteristic deterioration quantity caused by deviations in average values of the quality assurance objects measured by the measuring unit, second exposure characteristic deterioration quantity calculating unit to calculate second exposure characteristic deterioration quantity caused by dispersion in the quality assurance objects measured by the measuring unit, sum calculating unit to calculate simple sum of the first and second quantity, root sum square calculating unit to calculate root sum square of the first and second quantity, entire exposure characteristic deterioration quantity calculating unit to calculate entire exposure characteristic deterioration quantity as an interior division value of the simple sum and root sum square, and judgment unit to judge whether the entire exposure characteristic deterioration quantity is acceptable value.
摘要翻译：投影曝光掩模验收判定系统包括：保证对象测量单元，用于测量与投影曝光掩模相关的质量保证对象;第一曝光特性劣化量计算单元，用于计算由质量保证对象的平均值偏差引起的第一曝光特性劣化量，测量单元，第二曝光特性劣化量计算单元，用于计算由测量单元测量的质量保证对象中由色散引起的第二曝光特性劣化量;和计算单元，计算第一和第二数量的简单和，计算第一和第二数量的总和平均值的单位，全部曝光特性劣化量计算单元，计算作为简单和的r的内部分割值的整体曝光特性劣化量总和平方和判断单元判断整个曝光特性劣化量是否为可接受值。

58. 发明授权

US07336341B2 Simulator of lithography tool for correcting focus error and critical dimension, simulation method for correcting focus error and critical dimension, and computer medium for storing computer program for simulator 失效
标题翻译：用于校正焦点误差和关键尺寸的光刻工具的模拟器，用于校正聚焦误差和关键尺寸的模拟方法，以及用于存储用于模拟器的计算机程序的计算机介质
公开(公告)号：US07336341B2
公开(公告)日：2008-02-26
申请号：US11045296
申请日：2005-01-31
申请人： Shoji Mimotogi , Daisuke Kawamura , Akiko Yamada
发明人： Shoji Mimotogi , Daisuke Kawamura , Akiko Yamada
IPC分类号： G03B27/68
CPC分类号： G06F17/5009 , G03F7/70625
摘要： A simulator of a lithography tool includes a correcting parameter memory storing a correcting scaling value to correct a focus error of a projection optical system in the lithography tool and a correcting bias to correct a critical dimension error generated in the lithography tool. A model simulation engine simulates an image formation under a corrected focus calculated by multiplying a defocus of the projection optical system by the correcting scaling value to model a calculated critical dimension of an image. A bias corrector adds the correcting bias to the calculated critical dimension to correct the image.
摘要翻译：光刻工具的模拟器包括存储校正缩放值以校正光刻工具中的投影光学系统的聚焦误差的校正参数存储器以及用于校正光刻工具中产生的临界尺寸误差的校正偏置。模型仿真引擎模拟在通过将投影光学系统的散焦乘以校正缩放值计算的校正焦点下的图像形成，以对图像的计算临界尺寸进行建模。偏置校正器将校正偏差添加到计算的临界尺寸以校正图像。

59. 发明授权

US07319944B2 Method for a predicting a pattern shape by using an actual measured dissolution rate of a photosensitive resist 失效
标题翻译：通过使用光敏抗蚀剂的实际测量的溶解速率来预测图案形状的方法
公开(公告)号：US07319944B2
公开(公告)日：2008-01-15
申请号：US10760522
申请日：2004-01-21
申请人： Hiroko Nakamura , Shoji Mimotogi , Yasunobu Onishi
发明人： Hiroko Nakamura , Shoji Mimotogi , Yasunobu Onishi
IPC分类号： G06G7/48 , G06F17/50 , H01L21/00 , H01L21/66
CPC分类号： G03F7/30 , G03F1/36
摘要： A computer implemented method for development profile simulation in accordance with an embodiment of the present invention includes calculating optical intensities in a photosensitive resist, calculating a spatial average value of the optical intensities, reading a measured changing ratio of a dissolution rate of the photosensitive resist relating to an alkaline concentration changed by at least one of exposure dose on the photosensitive resist, a position in the thickness direction of the photosensitive resist and an alkaline concentration of developer for the photosensitive resist, obtaining a calculated dissolution rate by using the spatial average value and the measured changing ratio, and predicting a pattern shape of the photosensitive resist from the calculated dissolution rate.
摘要翻译：根据本发明的实施例的用于开发剖面模拟的计算机实现方法包括计算光敏抗蚀剂中的光强度，计算光强度的空间平均值，读取测量的光敏抗蚀剂溶解速率的变化率通过光敏抗蚀剂上的曝光剂量，感光性抗蚀剂的厚度方向上的位置和感光性抗蚀剂的显色剂的碱浓度中的至少一种而变化的碱性浓度，通过使用空间平均值求出计算出的溶解率，测量的变化率，并根据计算的溶解速率预测光敏抗蚀剂的图案形状。

60. 发明申请

US20070005280A1 Photomask quality estimation system and method for use in manufacturing of semiconductor device, and method for manufacturing the semiconductor device 失效
标题翻译：用于制造半导体器件的光掩模质量估计系统和方法以及半导体器件的制造方法
公开(公告)号：US20070005280A1
公开(公告)日：2007-01-04
申请号：US11475075
申请日：2006-06-27
申请人： Yukiyasu Arisawa , Tadahito Fujisawa , Shoji Mimotogi
发明人： Yukiyasu Arisawa , Tadahito Fujisawa , Shoji Mimotogi
IPC分类号： G06F19/00
CPC分类号： G03F1/84
摘要： A photomask quality estimation system comprises a measuring unit, a latitude computation unit and an estimation unit. The measuring unit measures the mask characteristic of each of a plurality of chip patterns formed on a mask substrate. The latitude computation unit computes the exposure latitude of each chip pattern based on the mask characteristic. The estimation unit estimates the quality of each chip pattern based on the exposure latitude.
摘要翻译：光掩模质量估计系统包括测量单元，纬度计算单元和估计单元。测量单元测量形成在掩模基板上的多个芯片图案中的每一个的掩模特性。纬度计算单元基于掩模特性来计算每个码片模式的曝光宽容度。估计单元基于曝光宽容度估计每个芯片图案的质量。

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