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1. 发明申请

US20050183056A1 Simulator of lithography tool, simulation method, and computer program product for simulator 失效
标题翻译：光刻工具的模拟器，模拟方法，以及模拟器的计算机程序产品
公开(公告)号：US20050183056A1
公开(公告)日：2005-08-18
申请号：US11045296
申请日：2005-01-31
申请人： Shoji Mimotogi , Daisuke Kawamura , Akiko Yamada
发明人： Shoji Mimotogi , Daisuke Kawamura , Akiko Yamada
IPC分类号： G03F7/20 , G03C5/00 , G03F9/00 , G06F17/50 , H01L21/027
CPC分类号： G06F17/5009 , G03F7/70625
摘要： A simulator of a lithography tool includes a correcting parameter memory storing a correcting scaling value to correct a focus error of a projection optical system in the lithography tool and a correcting bias to correct a critical dimension error gene rated in the lithography tool. A model simulation engine simulates an image formation under a corrected focus calculated by multiplying a defocus of the projection optical system by the correcting scaling value to model a calculated critical dimension of an image. A bias corrector adds the correcting bias to the calculated critical dimension to correct the image.
摘要翻译：光刻工具的模拟器包括校正参数存储器，其存储校正缩放值以校正光刻工具中的投影光学系统的聚焦误差，以及校正偏差以校正光刻工具中评估的关键尺寸误差基因。模型仿真引擎模拟在通过将投影光学系统的散焦乘以校正缩放值计算的校正焦点下的图像形成，以对图像的计算临界尺寸进行建模。偏置校正器将校正偏差添加到计算的临界尺寸以校正图像。

2. 发明授权

US07336341B2 Simulator of lithography tool for correcting focus error and critical dimension, simulation method for correcting focus error and critical dimension, and computer medium for storing computer program for simulator 失效
标题翻译：用于校正焦点误差和关键尺寸的光刻工具的模拟器，用于校正聚焦误差和关键尺寸的模拟方法，以及用于存储用于模拟器的计算机程序的计算机介质
公开(公告)号：US07336341B2
公开(公告)日：2008-02-26
申请号：US11045296
申请日：2005-01-31
申请人： Shoji Mimotogi , Daisuke Kawamura , Akiko Yamada
发明人： Shoji Mimotogi , Daisuke Kawamura , Akiko Yamada
IPC分类号： G03B27/68
CPC分类号： G06F17/5009 , G03F7/70625
摘要： A simulator of a lithography tool includes a correcting parameter memory storing a correcting scaling value to correct a focus error of a projection optical system in the lithography tool and a correcting bias to correct a critical dimension error generated in the lithography tool. A model simulation engine simulates an image formation under a corrected focus calculated by multiplying a defocus of the projection optical system by the correcting scaling value to model a calculated critical dimension of an image. A bias corrector adds the correcting bias to the calculated critical dimension to correct the image.
摘要翻译：光刻工具的模拟器包括存储校正缩放值以校正光刻工具中的投影光学系统的聚焦误差的校正参数存储器以及用于校正光刻工具中产生的临界尺寸误差的校正偏置。模型仿真引擎模拟在通过将投影光学系统的散焦乘以校正缩放值计算的校正焦点下的图像形成，以对图像的计算临界尺寸进行建模。偏置校正器将校正偏差添加到计算的临界尺寸以校正图像。

3. 发明授权

US07685556B2 Mask data correction method, photomask manufacturing method, computer program, optical image prediction method, resist pattern shape prediction method, and semiconductor device manufacturing method 失效
标题翻译：掩模数据校正方法，光掩模制造方法，计算机程序，光学图像预测方法，抗蚀剂图案形状预测方法和半导体器件制造方法
公开(公告)号：US07685556B2
公开(公告)日：2010-03-23
申请号：US11062437
申请日：2005-02-23
申请人： Kazuya Fukuhara , Daisuke Kawamura , Shoji Mimotogi
发明人： Kazuya Fukuhara , Daisuke Kawamura , Shoji Mimotogi
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F1/36 , G03F1/70 , G03F7/70133 , G03F7/70433
摘要： According to an aspect of the invention, there is provided a mask data correction method used when forming a photomask used in a photolithography process, comprising correcting mask data on the basis of simulation performed by using information including nonuniformity of an illumination luminance distribution in an exposure apparatus which uses the photomask formed by using the mask data obtained by the correction result.
摘要翻译：根据本发明的一个方面，提供了一种掩模数据校正方法，该方法在形成光刻工艺中使用的光掩模时使用，包括：基于通过使用包括曝光中的照度亮度分布的不均匀性的信息进行的模拟来校正掩模数据使用通过使用通过校正结果获得的掩模数据形成的光掩模的装置。

4. 发明申请

US20050166172A1 Critical pattern extracting method, critical pattern extracting program, and method of manufacturing semiconductor device 审中-公开
标题翻译：关键模式提取方法，关键模式提取程序以及制造半导体器件的方法
公开(公告)号：US20050166172A1
公开(公告)日：2005-07-28
申请号：US11006532
申请日：2004-12-08
申请人： Daisuke Kawamura , Shigeki Nojima , Shoji Mimotogi
发明人： Daisuke Kawamura , Shigeki Nojima , Shoji Mimotogi
IPC分类号： G03F1/36 , G03F1/68 , G03F1/70 , G03F7/00 , G03F9/00 , G06F17/50 , H01L21/027
CPC分类号： G03F1/36
摘要： According to a aspect of the present invention, there is provided a critical pattern extracting method which extracts critical patterns from mask data for manufacturing a photomask used in a lithography step, comprising at least: extracting mask data of a peripheral region within a predetermined range from an interested portion to be decided in the mask data; defining portions constituting the peripheral region as reference portions and calculating process generation amounts generated from the each reference portion in the lithography step by simulation; performing a predetermined arithmetic operation by using the process generation amounts and distances between the interested portion and the each reference portion; performing multiple integral of an arithmetic operation value obtained by the predetermined arithmetic operation in the peripheral region or an arithmetic operation equivalent to the multiple integral to calculate a process affecter amount; and comparing the process affecter amount with a predetermined threshold value.
摘要翻译：根据本发明的一个方面，提供了一种临界图案提取方法，其从用于制造光刻步骤中使用的光掩模的掩模数据中提取临界图案，该方法至少包括：从预定范围内提取外围区域的掩模数据，在掩模数据中确定的感兴趣部分; 将构成周边区域的部分作为参考部分，并通过模拟计算从光刻步骤中的每个参考部分产生的处理生成量; 通过使用感兴趣部分和每个参考部分之间的处理产生量和距离来执行预定的算术运算; 执行通过周边区域中的预定算术运算获得的算术运算值的多项积分或与多项积分相当的算术运算来计算加工效果量; 以及将所述过程影响器量与预定阈值进行比较。

5. 发明申请

US20050188341A1 Mask data correction method, photomask manufacturing method, computer program, optical image prediction method, resist pattern shape prediction method, and semiconductor device manufacturing method 失效
标题翻译：掩模数据校正方法，光掩模制造方法，计算机程序，光学图像预测方法，抗蚀剂图案形状预测方法和半导体器件制造方法
公开(公告)号：US20050188341A1
公开(公告)日：2005-08-25
申请号：US11062437
申请日：2005-02-23
申请人： Kazuya Fukuhara , Daisuke Kawamura , Shoji Mimotogi
发明人： Kazuya Fukuhara , Daisuke Kawamura , Shoji Mimotogi
IPC分类号： G03F1/32 , G03F1/36 , G03F1/68 , G03F1/70 , G03F1/72 , G03F7/00 , G03F7/20 , G06F17/50 , H01L21/00 , H01L21/027
CPC分类号： G03F7/705 , G03F1/36 , G03F1/70 , G03F7/70133 , G03F7/70433
摘要： According to an aspect of the invention, there is provided a mask data correction method used when forming a photomask used in a photolithography process, comprising correcting mask data on the basis of simulation performed by using information including nonuniformity of an illumination luminance distribution in an exposure apparatus which uses the photomask formed by using the mask data obtained by the correction result.
摘要翻译：根据本发明的一个方面，提供了一种掩模数据校正方法，该方法在形成光刻工艺中使用的光掩模时使用，包括：基于通过使用包括曝光中的照度亮度分布的不均匀性的信息进行的模拟来校正掩模数据使用通过使用通过校正结果获得的掩模数据形成的光掩模的装置。

7. 发明申请

US20130217217A1 PATTERN FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND COATING APPARATUS 有权
标题翻译：图案形成方法，半导体器件制造方法和涂层装置
公开(公告)号：US20130217217A1
公开(公告)日：2013-08-22
申请号：US13603902
申请日：2012-09-05
申请人： Katsutoshi Kobayashi , Daisuke Kawamura
发明人： Katsutoshi Kobayashi , Daisuke Kawamura
IPC分类号： H01L21/311 , H01L21/283 , H01L21/31 , B05C11/08
CPC分类号： H01L21/32139 , H01L21/28123 , H01L21/31144 , H01L21/6715 , H01L21/76802
摘要： According to one embodiment, a pattern forming method is disclosed. A resist pattern having a top surface is formed pattern on a substrate. A coating film having a first thickness distribution is formed on the substrate. The coating film covers the resist pattern. The coating film is thinned to expose the top surface of the resist pattern. The first thickness distribution is changed into a second thickness distribution which is more uniform than the first thickness distribution. The resist pattern is removed without removing the coating film. A pattern is formed in the substrate by processing the substrate by using the coating film as a mask.
摘要翻译：根据一个实施例，公开了一种图案形成方法。在基板上形成具有顶面的抗蚀剂图案。在基板上形成具有第一厚度分布的涂膜。涂膜覆盖抗蚀剂图案。使涂膜变薄以暴露抗蚀剂图案的顶表面。第一厚度分布变为比第一厚度分布更均匀的第二厚度分布。去除抗蚀剂图案而不去除涂膜。通过使用涂膜作为掩模来处理基板，在基板中形成图案。

8. 外观设计

USD682842S1 Display panel or screen with a graphical user interface 有权
公开(公告)号：USD682842S1
公开(公告)日：2013-05-21
申请号：US29371310
申请日：2010-12-28
申请人： Tohru Kurata , Wataru Tajika , Masayuki Ebisawa , Goro Takaki , Daisuke Kawamura , Ryuji Nakayama
设计人： Tohru Kurata , Wataru Tajika , Masayuki Ebisawa , Goro Takaki , Daisuke Kawamura , Ryuji Nakayama

9. 发明授权

US08347332B2 Information processing apparatus, information processing method, program, information providing apparatus, information providing method, and information processing system 失效
标题翻译：信息处理装置，信息处理方法，程序，信息提供装置，信息提供方法以及信息处理系统
公开(公告)号：US08347332B2
公开(公告)日：2013-01-01
申请号：US12729757
申请日：2010-03-23
申请人： Kazuhiro Fukuda , Daisuke Kawamura
发明人： Kazuhiro Fukuda , Daisuke Kawamura
IPC分类号： H04H60/33 , H04N7/10 , H04N7/025 , H04N5/445 , G06F3/00 , G06F13/00
CPC分类号： H04N7/173 , G06F3/0482 , H04N5/44543 , H04N7/163 , H04N21/4312 , H04N21/4314 , H04N21/44222 , H04N21/4532 , H04N21/4826 , H04N21/6582
摘要： There is provided a TV set including a content-related information control section which transmits the one or plurality of pieces of viewed content identification information to an ECG server and receives, from the ECG server, content-related information related to content having a relationship with respect to viewed content identified by each of the transmitted one or plurality of pieces of viewed content identification information, and a display control section which causes the display section to display an image based on image data included in each of one or a plurality of pieces of content-related information corresponding to content tuning information the input of which is accepted by an input section from among respective pieces of content-related information that the content-related information control section have received.
摘要翻译：提供了一种电视机，包括内容相关信息控制部分，其将一个或多个观看内容识别信息发送到ECG服务器，并从ECG服务器接收与内容有关的内容相关信息对于被发送的一个或多个观看内容识别信息中的每个所识别的内容的观看内容，以及显示控制部分，其使得显示部分基于包括在一个或多个内容相关信息与内容相关信息控制部分已经接收到的各个内容相关信息中的输入部分接受的内容调谐信息相对应。

10. 发明授权

US07968272B2 Semiconductor device manufacturing method to form resist pattern 失效
标题翻译：形成抗蚀剂图案的半导体器件制造方法
公开(公告)号：US07968272B2
公开(公告)日：2011-06-28
申请号：US11600198
申请日：2006-11-16
申请人： Daisuke Kawamura , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
发明人： Daisuke Kawamura , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
IPC分类号： G03C5/04
CPC分类号： G03F7/70925 , G03F7/70341
摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.
摘要翻译：本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的，待处理衬底的端部。在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为最接近被处理衬底。在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

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