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51. 发明授权

US09337072B2 Apparatus and method for substrate clamping in a plasma chamber 有权
标题翻译：用于在等离子体室中进行基板夹持的装置和方法
公开(公告)号：US09337072B2
公开(公告)日：2016-05-10
申请号：US12950105
申请日：2010-11-19
申请人： Ganesh Balasubramanian , Amit Bansal , Eller Y. Juco , Mohamad Ayoub , Hyung-Joon Kim , Karthik Janakiraman , Sudha Rathi , Deenesh Padhi , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad , Anton Baryshnikov , Chiu Chan , Shuang Liu
发明人： Ganesh Balasubramanian , Amit Bansal , Eller Y. Juco , Mohamad Ayoub , Hyung-Joon Kim , Karthik Janakiraman , Sudha Rathi , Deenesh Padhi , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad , Anton Baryshnikov , Chiu Chan , Shuang Liu
IPC分类号： H02N13/00 , H01L21/683 , C23C16/52 , H01J37/32 , H01L21/67
CPC分类号： H01L21/6831 , C23C16/52 , H01J37/32431 , H01L21/67069 , H01L21/67253
摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.
摘要翻译：本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的假想阻抗。

52. 发明授权

US08679987B2 Deposition of an amorphous carbon layer with high film density and high etch selectivity 有权
标题翻译：沉积具有高膜密度和高蚀刻选择性的无定形碳层
公开(公告)号：US08679987B2
公开(公告)日：2014-03-25
申请号：US13468776
申请日：2012-05-10
申请人： Patrick Reilly , Shahid Shaikh , Tersem Summan , Deenesh Padhi , Sanjeev Baluja , Juan Carlos Rocha-Alvarez , Thomas Nowak , Bok Hoen Kim , Derek R. Witty
发明人： Patrick Reilly , Shahid Shaikh , Tersem Summan , Deenesh Padhi , Sanjeev Baluja , Juan Carlos Rocha-Alvarez , Thomas Nowak , Bok Hoen Kim , Derek R. Witty
IPC分类号： H01L21/47 , H01L21/312
CPC分类号： H01L21/02527 , C23C16/26 , C23C16/56 , H01L21/02115 , H01L21/02274 , H01L21/02348 , H01L21/02592 , H01L21/0262 , H01L21/31144
摘要： Embodiments described herein relate to a method for processing a substrate. In one embodiment, the method includes introducing a gas mixture comprising a hydrocarbon source and a diluent gas into a deposition chamber located within a processing system, generating a plasma from the gas mixture in the deposition chamber at a temperature between about 200° C. and about 700° C. to form a low-hydrogen content amorphous carbon layer on the substrate, transferring the substrate into a curing chamber located within the processing system without breaking vacuum, and exposing the substrate to UV radiation within the curing chamber at a curing temperature above about 200° C.
摘要翻译：本文所述的实施例涉及一种用于处理衬底的方法。在一个实施方案中，该方法包括将包含烃源和稀释气体的气体混合物引入位于处理系统内的沉积室中，在沉积室中从约200℃至约200℃的温度和约700℃以在基底上形成低氢含量的无定形碳层，将基底转移到位于处理系统内的固化室中，而不破坏真空，并在固化温度下将基底暴露于固化室内的UV辐射高于约200℃

53. 发明授权

US07867578B2 Method for depositing an amorphous carbon film with improved density and step coverage 有权
标题翻译：沉积具有改善的密度和阶梯覆盖的无定形碳膜的方法
公开(公告)号：US07867578B2
公开(公告)日：2011-01-11
申请号：US11427324
申请日：2006-06-28
申请人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
发明人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
IPC分类号： H05H1/24
CPC分类号： H01L21/3146 , C23C16/045 , C23C16/26 , C23C16/5096 , C23C16/56 , H01L21/31144
摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
摘要翻译：在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间以从中除去颗粒。

54. 发明申请

US20090093128A1 METHODS FOR HIGH TEMPERATURE DEPOSITION OF AN AMORPHOUS CARBON LAYER 审中-公开
标题翻译：非晶碳层高温沉积方法
公开(公告)号：US20090093128A1
公开(公告)日：2009-04-09
申请号：US11868859
申请日：2007-10-08
申请人： MARTIN JAY SEAMONS , Yoganand N. Saripalli , Kwangduk Douglas Lee , Bok Hoen Kim , Visweswaren Sivaramakrishnan , Wendy H. Yeh , Josephine Ju-Hwei Chang Liu , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad
发明人： MARTIN JAY SEAMONS , Yoganand N. Saripalli , Kwangduk Douglas Lee , Bok Hoen Kim , Visweswaren Sivaramakrishnan , Wendy H. Yeh , Josephine Ju-Hwei Chang Liu , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad
IPC分类号： H01L21/47
CPC分类号： H01L21/02115 , C23C16/26 , H01L21/02274 , H01L21/3146 , H01L21/76829
摘要： Methods for high temperature deposition an amorphous carbon film with improved step coverage are provided. In one embodiment, a method for of depositing an amorphous carbon film includes providing a substrate in a process chamber, heating the substrate at a temperature greater than 500 degrees Celsius, supplying a gas mixture comprising a hydrocarbon compound and an inert gas into the process chamber containing the heated substrate, and depositing an amorphous carbon film on the heated substrate having a stress of between 100 mega-pascal (MPa) tensile and about 100 mega-pascal (MPa) compressive.
摘要翻译：提供了高温沉积方法，提供了具有改进的台阶覆盖率的无定形碳膜。在一个实施方案中，沉积非晶碳膜的方法包括在处理室中提供衬底，在大于500摄氏度的温度下加热衬底，将包含烃化合物和惰性气体的气体混合物供应到处理室包含加热的基底，以及在具有100兆帕（拉伸）拉伸和约100兆帕斯卡（MPa）压应力之间的应力的加热基底上沉积无定形碳膜。

55. 发明授权

US06465051B1 Method of operating high density plasma CVD reactor with combined inductive and capacitive coupling 失效
标题翻译：操作具有组合电感和电容耦合的高密度等离子体CVD反应堆的方法
公开(公告)号：US06465051B1
公开(公告)日：2002-10-15
申请号：US08751899
申请日：1996-11-18
申请人： Turgut Sahin , Fred C. Redeker , Romuald Nowak , Shijian Li , Timothy Dyer , Derek R. Witty
发明人： Turgut Sahin , Fred C. Redeker , Romuald Nowak , Shijian Li , Timothy Dyer , Derek R. Witty
IPC分类号： H05H146
CPC分类号： H01J37/32862 , C23C16/4405 , H01J37/32082
摘要： The invention is embodied in a method of cleaning a plasma reactor by creating a vacuum in the chamber while introducing an etchant gas into the chamber through the gas injection ports, and applying RF energy to a ceiling electrode in the chamber while not necessarily applying RF energy to the coil antenna, so as to strike a predominantly capacitively coupled plasma in the vacuum chamber. In another embodiment the method includes, whenever the reactor is to be operated in an inductive coupling mode, applying RF power to the reactors coil antenna while grounding the ceiling electrode, and whenever the reactor is to be operated in a capacitive coupling mode, applying RF power to the ceiling electrode, and whenever the reactor is to be cleaned, cleaning the reactor by applying RF power to the ceiling electrode and to the coil antenna while introducing an etchant gas into the vacuum chamber. In yet another embodiment the method includes performing chemical vapor deposition on a wafer by introducing a deposition precursor gas into the chamber while maintaining an inductively coupled plasma therein by applying RF power to the coil antenna while grounding the ceiling electrode, and cleaning the reactor by introducing a precursor cleaning gas into the chamber while maintaining a capacitively coupled plasma in the chamber by applying RF power to the ceiling electrode.
摘要翻译：本发明体现在一种通过在室中产生真空来清洁等离子体反应器的方法，同时通过气体注入口将蚀刻剂气体引入室中，并且将RF能量施加到室中的顶板电极，而不一定施加RF能量到线圈天线，以便在真空室中击穿主要电容耦合的等离子体。在另一个实施例中，该方法包括：每当反应器以电感耦合模式工作时，在将天线电极接地的同时向反应器线圈天线施加RF功率，并且每当反应器以电容耦合模式工作时，施加RF 电源到天花板电极，并且每当要清洁反应堆时，通过向天花板电极和线圈天线施加RF功率来清洁反应器，同时将蚀刻剂气体引入真空室。在另一个实施方案中，该方法包括通过将沉积前体气体引入室中，同时通过在将天线电极接地的同时向线圈天线施加RF功率来维持其中的电感耦合等离子体来执行化学气相沉积，并通过引入来清洁反应器前体清洗气体进入室，同时通过向天花板电极施加RF功率来在室内维持电容耦合的等离子体。

56. 发明申请

US20130189845A1 CONFORMAL AMORPHOUS CARBON FOR SPACER AND SPACER PROTECTION APPLICATIONS 审中-公开
公开(公告)号：US20130189845A1
公开(公告)日：2013-07-25
申请号：US13354129
申请日：2012-01-19
申请人： Sungjin Kim , Deenesh Padhi , Song Hyun Hong , Bok Hoen Kim , Derek R. Witty
发明人： Sungjin Kim , Deenesh Padhi , Song Hyun Hong , Bok Hoen Kim , Derek R. Witty
IPC分类号： H01L21/311
CPC分类号： H01L21/0337 , H01L21/02115 , H01L21/02274 , H01L21/0332 , H01L21/0338 , H01L21/31111 , H01L21/31116 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/32139
摘要： A method of forming a nitrogen-doped amorphous carbon layer on a substrate in a processing chamber is provided. The method generally includes depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a nitrogen-doped amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the nitrogen-doped amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the nitrogen-doped amorphous carbon layer, and removing the patterned features from the substrate.

57. 发明申请

US20090044753A1 METHODS TO IMPROVE THE IN-FILM DEFECTIVITY OF PECVD AMORPHOUS CARBON FILMS 有权
标题翻译：提高PECVD非晶碳膜薄膜缺陷度的方法
公开(公告)号：US20090044753A1
公开(公告)日：2009-02-19
申请号：US12255638
申请日：2008-10-21
申请人： Deenesh Padhi , Chiu Chan , Sudha Rathi , Ganesh Balasubramanian , Jianhua Zhou , Karthik Janakiraman , Martin J. Seamons , Visweswaren Sivaramakrishnan , Derek R. Witty , Hichem M'Saad
发明人： Deenesh Padhi , Chiu Chan , Sudha Rathi , Ganesh Balasubramanian , Jianhua Zhou , Karthik Janakiraman , Martin J. Seamons , Visweswaren Sivaramakrishnan , Derek R. Witty , Hichem M'Saad
IPC分类号： H01L21/30
CPC分类号： C23C16/45565 , C23C16/0254 , C23C16/26 , C23C16/4404
摘要： An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.
摘要翻译：提供了具有用于半导体应用的保护涂层的制品及其制造方法。在某些实施例中，提供了在半导体处理室中使用的制品的铝表面的涂覆方法。该方法包括提供处理室; 将物品放入处理室; 将包含碳源的第一气体流入所述处理室; 将包含氮源的第二气体流入所述处理室; 在室内形成等离子体; 以及在铝表面上沉积涂层材料。在某些实施方案中，涂层材料包含无定形含碳氮层。在某些实施例中，制品包括构造成将气体输送到处理室的喷头。

58. 发明授权

US07018941B2 Post treatment of low k dielectric films 有权
标题翻译：后处理低k电介质膜
公开(公告)号：US07018941B2
公开(公告)日：2006-03-28
申请号：US10830203
申请日：2004-04-21
申请人： Zhenjiang Cui , Josephine J. Chang , Alexandros T. Demos , Reza Arghavani , Derek R. Witty , Helen R. Armer , Girish A. Dixit , Hichem M'Saad
发明人： Zhenjiang Cui , Josephine J. Chang , Alexandros T. Demos , Reza Arghavani , Derek R. Witty , Helen R. Armer , Girish A. Dixit , Hichem M'Saad
IPC分类号： H01L21/31 , H01L21/461
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/02351
摘要： A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.
摘要翻译：提供了一种在衬底上沉积低介电常数膜并对低介电常数膜进行后处理的方法。后处理包括将低介电常数膜快速加热到期望的高温，然后快速冷却低介电常数膜，使得低介电常数膜暴露于所需的高温约5秒或更短。一方面，后处理还包括将低介电常数膜暴露于电子束处理和/或UV辐射。

59. 发明申请

US20120204795A1 METHODS TO IMPROVE THE IN-FILM DEFECTIVITY OF PECVD AMORPHOUS CARBON FILMS 审中-公开
标题翻译：提高PECVD非晶碳膜薄膜缺陷度的方法
公开(公告)号：US20120204795A1
公开(公告)日：2012-08-16
申请号：US13456447
申请日：2012-04-26
申请人： Deenesh Padhi , Chiu Chan , Sudha Rathi , Ganesh Balasubramanian , Jianhua Zhou , Karthik Janakiraman , Martin J. Seamons , Visweswaren Sivaramakrishnan , Derek R. Witty , Hichem M'Saad
发明人： Deenesh Padhi , Chiu Chan , Sudha Rathi , Ganesh Balasubramanian , Jianhua Zhou , Karthik Janakiraman , Martin J. Seamons , Visweswaren Sivaramakrishnan , Derek R. Witty , Hichem M'Saad
IPC分类号： C23C16/50
CPC分类号： C23C16/45565 , C23C16/0254 , C23C16/26 , C23C16/4404
摘要： An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.
摘要翻译：提供了具有用于半导体应用的保护涂层的制品及其制造方法。在某些实施例中，提供了在半导体处理室中使用的制品的铝表面的涂覆方法。该方法包括提供处理室; 将物品放入处理室; 将包含碳源的第一气体流入所述处理室; 将包含氮源的第二气体流入所述处理室; 在室内形成等离子体; 以及在铝表面上沉积涂层材料。在某些实施方案中，涂层材料包含无定形含碳氮层。在某些实施例中，制品包括构造成将气体输送到处理室的喷头。

60. 发明申请

US20110090613A1 APPARATUS AND METHOD FOR SUBSTRATE CLAMPING IN A PLASMA CHAMBER 有权
标题翻译：用于在等离子体室中衬底夹紧的装置和方法
公开(公告)号：US20110090613A1
公开(公告)日：2011-04-21
申请号：US12950105
申请日：2010-11-19
申请人： Ganesh Balasubramanian , Amit Bansal , Eller Y. Juco , Mohamad Ayoub , Hyung-Joon Kim , Karthik Janakiraman , Sudha Rathi , Deenesh Padhi , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad , Anton Baryshnikov , Chiu Chan , Shuang Liu
发明人： Ganesh Balasubramanian , Amit Bansal , Eller Y. Juco , Mohamad Ayoub , Hyung-Joon Kim , Karthik Janakiraman , Sudha Rathi , Deenesh Padhi , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad , Anton Baryshnikov , Chiu Chan , Shuang Liu
IPC分类号： H01L21/683 , H01L21/66 , G01R27/02
CPC分类号： H01L21/6831 , C23C16/52 , H01J37/32431 , H01L21/67069 , H01L21/67253
摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.
摘要翻译：本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的虚拟阻抗。

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