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51. 发明授权

US07951672B2 Measurement and control of strained devices 有权
标题翻译：应变装置的测量和控制
公开(公告)号：US07951672B2
公开(公告)日：2011-05-31
申请号：US12904731
申请日：2010-10-14
申请人： Daniel C. Wack , Ady Levy , John Fielden
发明人： Daniel C. Wack , Ady Levy , John Fielden
IPC分类号： H01L21/336
CPC分类号： G01B11/245 , G01B11/16 , G01B2210/56 , G01L5/0047
摘要： A method that includes measuring stress on at least one of a monitor substrate, a production substrate, and a proxy device on a production substrate to produce stress data, measuring shape on at least one of a proxy device on a production substrate and a production device on a production substrate to produce shape data, and inputting the stress data and the shape data into an elastic deformation calculation to determine a stress value for a production device.
摘要翻译：一种方法，其包括测量生产基板上的监视器基板，生产基板和代理装置中的至少一个上的应力，以产生应力数据，在生产基板上的代理装置和生产装置中的至少一个上测量形状在生产基板上产生形状数据，并将应力数据和形状数据输入到弹性变形计算中以确定生产装置的应力值。

52. 发明授权

US07929667B1 High brightness X-ray metrology 有权
标题翻译：高亮度X射线测量
公开(公告)号：US07929667B1
公开(公告)日：2011-04-19
申请号：US12569833
申请日：2009-09-29
申请人： Guorong V. Zhuang , John Fielden
发明人： Guorong V. Zhuang , John Fielden
IPC分类号： H01J35/00 , H01J35/08 , G01N23/20
CPC分类号： H05G2/003 , H05G2/005
摘要： An x-ray metrology tool having only one x-ray source. The x-ray source includes a liquid metal source for heating and melting at least one metal and producing a liquid metal jet, a liquid metal collector for acquiring the liquid metal jet, a liquid metal circulation system for returning liquid metal from the liquid metal collector to the liquid metal source, and an electron beam source for directing an electron beam at the liquid metal jet anode, thereby producing an incident x-ray beam that is directable towards a sample. A detector receives emissions from the sample in response to the incident x-ray beam, and produces signals indicative of properties of the sample. A controller controls the x-ray source, acquires the signals from the detector, and determines the properties of the sample based at least in part on the signals.
摘要翻译：只有一个x射线源的X射线测量工具。 x射线源包括用于加热和熔化至少一种金属并产生液态金属射流的液态金属源，用于获取液态金属射流的液体金属收集器，用于从液态金属收集器返回液态金属的液态金属循环系统以及用于在液态金属喷射阳极处引导电子束的电子束源，从而产生可朝向样品指向的入射X射线束。检测器响应于入射的X射线束接收来自样品的发射，并产生指示样品性质的信号。控制器控制x射线源，从检测器获取信号，并至少部分地基于信号来确定样本的属性。

53. 发明授权

US07564552B2 Systems and methods for measurement of a specimen with vacuum ultraviolet light 有权
标题翻译：用真空紫外光测量样品的系统和方法
公开(公告)号：US07564552B2
公开(公告)日：2009-07-21
申请号：US10845958
申请日：2004-05-14
申请人： John Fielden , Gary Janik , Shing Lee
发明人： John Fielden , Gary Janik , Shing Lee
IPC分类号： G01J4/00
CPC分类号： G03F7/70933 , G03F7/70916
摘要： Various systems for measurement of a specimen are provided. One system includes a first optical subsystem, which is disposed within a purged environment. The purged environment may be provided by a differential purging subsystem. The first optical subsystem performs measurements using vacuum ultraviolet light. This system also includes a second optical subsystem, which is disposed within a non-purged environment. The second optical subsystem performs measurements using non-vacuum ultraviolet light. Another system includes two or more optical subsystems configured to perform measurements of a specimen using vacuum ultraviolet light. The system also includes a purging subsystem configured to maintain a purged environment around the two or more optical subsystems. The purging subsystem is also configured to maintain the same level of purging in both optical subsystems. Some systems also include a cleaning subsystem configured to remove contaminants from a portion of a specimen prior to measurements at vacuum ultraviolet wavelengths.
摘要翻译：提供了用于测量样本的各种系统。一个系统包括设置在净化环境中的第一光学子系统。净化的环境可以由差动清洗子系统提供。第一个光学子系统使用真空紫外线进行测量。该系统还包括第二光学子系统，其被布置在非净化环境中。第二光学子系统使用非真空紫外光进行测量。另一系统包括两个或更多个配置成使用真空紫外光进行样本测量的光学子系统。该系统还包括净化子系统，该净化子系统配置为保持围绕两个或更多个光学子系统的净化环境。清洗子系统还被配置为在两个光学子系统中保持相同的清洗水平。一些系统还包括清洁子系统，被配置为在真空紫外线波长测量之前从试样的一部分去除污染物。

54. 发明授权

US07369235B1 Method and system for measuring deep trenches in silicon 有权
标题翻译：测量硅深沟的方法和系统
公开(公告)号：US07369235B1
公开(公告)日：2008-05-06
申请号：US11165711
申请日：2005-06-24
申请人： Gary R. Janik , John Fielden
发明人： Gary R. Janik , John Fielden
IPC分类号： G01J4/00
CPC分类号： G01J4/04 , G01B11/0641 , G01N21/211
摘要： A spectroscopic ellipsometry system directs a near infra-red (NIR) probe beam at a test sample to allow metrology to be performed on vertical structures within the test sample. Because silicon is relatively transparent to NIR light, structural information can be determined from the polarization effects produced by the test sample, in a manner similar to that used with IR spectroscopic ellipsometry systems. However, unlike IR light, which requires delicate and costly optical and measurement components (e.g., vibration-sensitive Fourier transform sensors), NIR light can be directed and detected using more robust and inexpensive components (e.g., array-based detectors), thereby making a NIR spectroscopic ellipsometry system much more affordable and usable than conventional IR spectroscopic ellipsometry systems.
摘要翻译：光谱椭圆测量系统在测试样品上引导近红外（NIR）探针光束，以便在测试样品内的垂直结构上进行测量。因为硅对于NIR光是相对透明的，所以结构信息可以由与测试样品产生的极化效应以与用于IR光谱椭偏仪系统的方式类似的方式来确定。然而，与需要精密和昂贵的光学和测量部件（例如，振动傅里叶变换传感器）的IR光不同，可以使用更稳健和便宜的部件（例如，基于阵列的检测器）来引导和检测NIR光，从而使近红外光谱椭偏仪系统比常规IR光谱椭偏仪系统更加实惠和可用。

55. 发明授权

US07301634B2 Apparatus and methods for detecting overlay errors using scatterometry 有权
标题翻译：使用散射法检测重叠误差的装置和方法
公开(公告)号：US07301634B2
公开(公告)日：2007-11-27
申请号：US10785821
申请日：2004-02-23
申请人： Walter D. Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael E. Adel , Christopher F. Bevis , John Fielden , Noah Bareket , Anatoly Fabrikant , Mark Ghinovker , Piotr Zalicki , Dan Wack
发明人： Walter D. Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael E. Adel , Christopher F. Bevis , John Fielden , Noah Bareket , Anatoly Fabrikant , Mark Ghinovker , Piotr Zalicki , Dan Wack
IPC分类号： G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, an interferometer is employed to modulate substantially a plurality of wavelengths of a broadband source and then acquiring one or more images of the periodic targets. There are predefined offsets between the first and second structures. An overlay error between the first and second structures is then determined by analyzing the one or more acquired images from the periodic targets using a scatterometry overlay technique based on the predefined offsets.
摘要翻译：公开了一种确定多层样本的两层之间的覆盖误差的方法。对于每个具有由第一层形成的第一结构和由样本的第二层形成的第二结构的多个周期性目标，使用干涉仪来调制宽带源的基本上多个波长，然后获取一个或更多图像的周期性目标。在第一和第二结构之间有预定义的偏移。然后通过使用基于预定义的偏移的散射测量覆盖技术来分析来自周期性目标的一个或多个获取的图像来确定第一和第二结构之间的重叠误差。

56. 发明申请

US20060141376A1 Methods and systems for controlling variation in dimensions of patterned features across a wafer 审中-公开
标题翻译：用于控制晶片上图案化特征的尺寸变化的方法和系统
公开(公告)号：US20060141376A1
公开(公告)日：2006-06-29
申请号：US11314638
申请日：2005-12-20
申请人： Ady Levy , Michael Hanna , Dan Wack , John Fielden , Christopher Bevis , Larry Wagner
发明人： Ady Levy , Michael Hanna , Dan Wack , John Fielden , Christopher Bevis , Larry Wagner
IPC分类号： G06F17/50 , H01L21/66 , G03C5/00 , G01C25/00
CPC分类号： G03F7/70675 , G03F7/38 , G03F7/40 , G03F7/70425 , G03F7/70625
摘要： Methods and systems for controlling variation in dimensions of patterned features across a wafer are provided. One method includes measuring a characteristic of a latent image formed in a resist at more than one location across a wafer during a lithography process. The method also includes altering a parameter of the lithography process in response to the characteristic to reduce variation in dimensions of patterned features formed across the wafer by the lithography process. Altering the parameter compensates for non-time varying spatial variation in a temperature to which the wafer is exposed during a post exposure bake step of the lithography process and an additional variation in the post exposure bake step.
摘要翻译：提供了用于控制跨晶片的图案化特征的尺寸变化的方法和系统。一种方法包括在光刻过程期间测量跨越晶片的多于一个位置处的抗蚀剂中形成的潜像的特性。该方法还包括响应于特性来改变光刻工艺的参数，以减小通过光刻工艺在晶片上形成的图案化特征的尺寸变化。改变参数补偿在光刻工艺的后曝光烘烤步骤期间晶片曝光的温度中的非时间变化的空间变化以及后曝光烘烤步骤的附加变化。

57. 发明申请

US20050254050A1 Systems and methods for measurement of a specimen with vacuum ultraviolet light 有权
标题翻译：用真空紫外光测量样品的系统和方法
公开(公告)号：US20050254050A1
公开(公告)日：2005-11-17
申请号：US10846053
申请日：2004-05-14
申请人： John Fielden , Gary Janik , Shing Lee
发明人： John Fielden , Gary Janik , Shing Lee
IPC分类号： G01J3/10 , G01J3/36 , G01J4/00 , G01N21/21
CPC分类号： G01J3/10 , G01J3/0286 , G01J3/36 , G01N21/211 , G01N2021/213
摘要： Various systems for measurement of a specimen are provided. One system includes an optical subsystem configured to perform measurements of a specimen using vacuum ultraviolet light and non-vacuum ultraviolet light. This system also includes a purging subsystem that is configured to maintain a purged environment around the optical subsystem during the measurements. Another system includes a cleaning subsystem configured to remove contaminants from a specimen prior to measurement. In one embodiment, the cleaning subsystem may be a laser-based cleaning subsystem that is configured to remove contaminants from a localized area on the specimen. The system also includes an optical subsystem that is configured to perform measurements of the specimen using vacuum ultraviolet light. The optical subsystem is disposed within a purged environment. In some embodiments, the system may include a differential purging subsystem that is configured to provide the purged environment for the optical subsystem.
摘要翻译：提供了用于测量样本的各种系统。一个系统包括被配置为使用真空紫外光和非真空紫外光进行样本的测量的光学子系统。该系统还包括清洗子系统，其被配置为在测量期间保持围绕光学子系统的净化环境。另一种系统包括清洁子系统，其构造成在测量之前从试样中去除污染物。在一个实施例中，清洁子系统可以是被配置为从样本上的局部区域去除污染物的基于激光的清洁子系统。该系统还包括被配置为使用真空紫外光进行样本的测量的光学子系统。光学子系统设置在净化的环境中。在一些实施例中，系统可以包括差分清洗子系统，其被配置为提供用于光学子系统的净化环境。

58. 发明申请

US20050252752A1 Systems and methods for measurement of a specimen with vacuum ultraviolet light 有权
标题翻译：用真空紫外光测量样品的系统和方法
公开(公告)号：US20050252752A1
公开(公告)日：2005-11-17
申请号：US10845958
申请日：2004-05-14
申请人： John Fielden , Gary Janik , Shing Lee
发明人： John Fielden , Gary Janik , Shing Lee
IPC分类号： G03F7/20 , H01H27/00
CPC分类号： G03F7/70933 , G03F7/70916
摘要： Various systems for measurement of a specimen are provided. One system includes a first optical subsystem, which is disposed within a purged environment. The purged environment may be provided by a differential purging subsystem. The first optical subsystem performs measurements using vacuum ultraviolet light. This system also includes a second optical subsystem, which is disposed within a non-purged environment. The second optical subsystem performs measurements using non-vacuum ultraviolet light. Another system includes two or more optical subsystems configured to perform measurements of a specimen using vacuum ultraviolet light. The system also includes a purging subsystem configured to maintain a purged environment around the two or more optical subsystems. The purging subsystem is also configured to maintain the same level of purging in both optical subsystems. Some systems also include a cleaning subsystem configured to remove contaminants from a portion of a specimen prior to measurements at vacuum ultraviolet wavelengths.
摘要翻译：提供了用于测量样本的各种系统。一个系统包括设置在净化环境中的第一光学子系统。净化的环境可以由差动清洗子系统提供。第一个光学子系统使用真空紫外线进行测量。该系统还包括第二光学子系统，其被布置在非净化环境中。第二光学子系统使用非真空紫外光进行测量。另一系统包括两个或更多个配置成使用真空紫外光进行样本测量的光学子系统。该系统还包括净化子系统，该净化子系统配置为保持围绕两个或更多个光学子系统的净化环境。清洗子系统还被配置为在两个光学子系统中保持相同的清洗水平。一些系统还包括清洁子系统，被配置为在真空紫外线波长测量之前从试样的一部分去除污染物。

59. 发明授权

US06891627B1 Methods and systems for determining a critical dimension and overlay of a specimen 有权
标题翻译：用于确定试样的临界尺寸和覆盖层的方法和系统
公开(公告)号：US06891627B1
公开(公告)日：2005-05-10
申请号：US09956838
申请日：2001-09-20
申请人： Ady Levy , Kyle A. Brown , Gary Bultman , Mehrdad Nikoonahad , Dan Wack , John Fielden
发明人： Ady Levy , Kyle A. Brown , Gary Bultman , Mehrdad Nikoonahad , Dan Wack , John Fielden
IPC分类号： G01N21/21 , G01N21/47 , G01N21/63 , G01N21/64 , G01N21/95 , G03F7/20 , H01L21/66 , G01N21/88 , G01B11/04 , G01B11/14 , G01N21/00
CPC分类号： G01N21/27 , G01N21/211 , G01N21/47 , G01N21/636 , G01N21/64 , G01N21/9501 , G01N21/956 , G01N2021/646 , G01N2021/8825 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/70658 , G03F7/707 , G03F7/70708 , H01J2237/31701 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, critical dimension and overlay misregistration. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
摘要翻译：提供了用于监测半导体制造工艺的方法和系统。系统可以包括被配置为支撑样本并耦合到测量装置的台。测量装置可以包括照明系统和检测系统。照明系统和检测系统可以被配置为使得系统可以被配置为确定样本的多个属性。例如，系统可以被配置为确定样本的多个属性，包括但不限于临界尺寸和重叠错位。以这种方式，测量装置可以执行多个光学和/或非光学测量和/或检查技术。

60. 发明授权

US06812045B1 Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation 失效
标题翻译：用于确定在离子注入之前，期间或之后的样品的特性的方法和系统
公开(公告)号：US06812045B1
公开(公告)日：2004-11-02
申请号：US09956842
申请日：2001-09-20
申请人： Mehrdad Nikoonahad , Ady Levy , Kyle A. Brown , Gary Bultman , Dan Wack , John Fielden
发明人： Mehrdad Nikoonahad , Ady Levy , Kyle A. Brown , Gary Bultman , Dan Wack , John Fielden
IPC分类号： H01L2166
CPC分类号： G03F7/70616 , G01N21/636 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/707 , G03F7/70708 , H01J2237/31701
摘要： Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a characteristic of a specimen prior to, during, or subsequent to ion implantation. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
摘要翻译：提供了用于监测半导体制造工艺的方法和系统。系统可以包括被配置为支撑样本并耦合到测量装置的台。测量装置可以包括照明系统和检测系统。照明系统和检测系统可以被配置为使得系统可以被配置为确定样本的多个属性。例如，该系统可以被配置成确定样品的多个性质，包括但不限于在离子注入之前，期间或之后的样品的特性。以这种方式，测量装置可以执行多个光学和/或非光学测量和/或检查技术。

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