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51. 发明授权

US5347592A Pattern judging method and mask producing method using the pattern judging method 失效
标题翻译：模式判断方法和使用模式判断方法的掩模制作方法
公开(公告)号：US5347592A
公开(公告)日：1994-09-13
申请号：US917260
申请日：1992-07-23
申请人： Hiroshi Yasuda , Satoru Yamazaki , Kiichi Sakamoto
发明人： Hiroshi Yasuda , Satoru Yamazaki , Kiichi Sakamoto
IPC分类号： H01L21/027 , G03F1/20 , G06F17/50 , H01J37/302 , G06K9/00
CPC分类号： G03F1/20 , G06F17/5081 , H01J37/3026
摘要： A pattern judging method which is to be implemented on a computer automatically determines whether or not a pattern should be prohibited from being formed in a mask. The pattern judging method includes the steps of (a) dividing an area of the mask where a desired pattern is to be formed into a plurality of regions, (b) calculating a predetermined physical quantity for each of the regions for a case where one or a plurality of openings corresponding to the desired pattern are formed in the mask, and (c) prohibiting the desired pattern from being formed in the mask if the predetermined quantity calculated in the step (b) exceeds a threshold value for at least one of the regions.
摘要翻译：要在计算机上实现的模式判断方法自动地确定是否应该禁止在掩模中形成图案。模式判断方法包括以下步骤：（a）将要形成的期望图案的掩模的区域划分为多个区域，（b）为每个区域计算一个或多个区域的情况下的预定物理量，如果在步骤（b）中计算的预定量超过阈值中的至少一个，则在掩模中形成对应于期望图案的多个开口，和（c）禁止在掩模中形成期望的图案地区。

52. 发明授权

US5256881A Mask and charged particle beam exposure method using the mask 失效
标题翻译：掩模和带电粒子束曝光方法使用掩模
公开(公告)号：US5256881A
公开(公告)日：1993-10-26
申请号：US896715
申请日：1992-06-10
申请人： Satoru Yamazaki , Hiroshi Yasuda , Kiichi Sakamoto
发明人： Satoru Yamazaki , Hiroshi Yasuda , Kiichi Sakamoto
IPC分类号： H01L21/027 , H01J37/317 , H01L21/30 , H01J37/302
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , H01J37/3174 , H01J2237/31776 , H01J2237/31788
摘要： A transmission mask is used when exposing patterns by a charged particle beam which passes therethrough. The transmission mask includes a plate, and a plurality of rectangular blocks formed on a surface of the plate and having an area approximately equal to a cross sectional area of the charged particle beam irradiated thereon, where the blocks include a first block in which at least one transmission hole is provided and a second block in which no transmission hole is provided. The transmission of the first block is partly irradiated by the charged particle beam when varying the size of the exposing pattern. A single second block is provided immediately adjacent to at least two first blocks, so that an irradiating position of the charged particle beam can be varied with respect to both the two first blocks from the single second block.

53. 发明授权

US5175435A Electron beam exposure system with increased efficiency of exposure operation 失效
标题翻译：电子束曝光系统具有更高的曝光效率
公开(公告)号：US5175435A
公开(公告)日：1992-12-29
申请号：US782251
申请日：1991-10-25
申请人： Kiichi Sakamoto , Shunsuke Fueki , Hiroshi Yasuda
发明人： Kiichi Sakamoto , Shunsuke Fueki , Hiroshi Yasuda
IPC分类号： H01L21/027 , H01J37/302
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J2237/30422 , H01J2237/31776
摘要： An electron beam exposure system comprises a pattern data generator for producing first pattern data indicative of a desired pattern of electron beam to be written on a wafer and second pattern data indicative of the number of repetitions of the pattern specified by the first pattern data, as a time sequential mixture of the first and second pattern data. The time sequential mixture of the data is sorted in a data sorting unit into a parallel data of the first pattern data and the second pattern data. Then, a discrimination is made whether the data is the first pattern data or the second pattern data, and when the data is the second pattern data, the data that follows immediately behind the second pattern data is transferred to an output path simultaneously with the second pattern data, which is transferred to another output path. Thereby, the first and second pattern data form a parallel data. The parallel data thus formed is next compressed by deleting the data, that follows immediately behind the data which contains the second pattern data, from both output paths.
摘要翻译：电子束曝光系统包括图形数据发生器，用于产生指示要写入晶片的电子束的期望图案的第一图案数据和指示由第一图案数据指定的图案的重复次数的第二图案数据，第一和第二图案数据的时间顺序混合。将数据的时间序列混合在数据排序单元中排列成第一图案数据和第二图案数据的并行数据。然后，判断数据是第一图案数据还是第二图案数据，并且当数据是第二图案数据时，紧接在第二图案数据之后的数据与第二图案数据同时被传送到输出路径模式数据，传输到另一个输出路径。由此，第一和第二图案数据形成并行数据。这样形成的并行数据接下来通过从两个输出路径中删除紧跟在包含第二模式数据的数据之后的数据来进行压缩。

54. 发明授权

US5029222A Photoelectron image projection apparatus 失效
标题翻译：光电子图像投影仪
公开(公告)号：US5029222A
公开(公告)日：1991-07-02
申请号：US238047
申请日：1988-08-30
申请人： Akio Yamada , Hiroshi Yasuda , Kiichi Sakamoto , Jinko Kudou
发明人： Akio Yamada , Hiroshi Yasuda , Kiichi Sakamoto , Jinko Kudou
IPC分类号： G03F7/26 , G03F9/00 , H01J37/30 , H01L21/32
CPC分类号： G03F9/00 , G03F7/26 , H01J37/30 , H01L21/32 , H01J2237/2817 , H01J2237/31779 , H01J2237/31794
摘要： A photoelectron image projection apparatus has a device for detecting an image of a pattern of a mask within a predetermined projection region of the mask. An image signal describing the detected image is compared with a reference image signal which is known from the pattern of the mask, and a defect in the projection pattern is detected when the two compared image signals differ.

55. 发明授权

US5225684A Charged particle beam exposure apparatus control system and a method of operation for providing a drawing start signal 失效
标题翻译：带电粒子束曝光装置控制系统和提供绘图开始信号的操作方法
公开(公告)号：US5225684A
公开(公告)日：1993-07-06
申请号：US948475
申请日：1992-09-22
申请人： Kazutaka Taki , Hiroshi Yasuda , Junichi Kai , Atsushi Saito , Kiichi Sakamoto
发明人： Kazutaka Taki , Hiroshi Yasuda , Junichi Kai , Atsushi Saito , Kiichi Sakamoto
IPC分类号： H01J37/302
CPC分类号： H01J37/3023 , H01J2237/1504 , H01J2237/20285 , H01J2237/3175
摘要： A charged particle beam exposure system emits and deflects an electron beam (11a) toward a continuously moving exposure object (18) and draws semiconductor integrated circuit patterns on the object. The system comprises a charged particle beam generating unit (11), first and second deflectors (12 and 13) for deflecting the electron beam (11a), first and second deflector drivers (14 and 15) for controlling outputs of the first and second deflectors (12 and 13), a stage driving and controlling unit (16) for controlling the movement of the object (18), and a controller (17) for controlling the inputs and outputs of the respective components. The second deflector driver (15) comprises at least a data correction unit (15A) for receiving main deflector data (MD1) and stage position data (STD) and providing corrected main deflector data (MD2), a deflection signal output unit (15B) for providing a main deflector set signal (S1) according to the main deflector data (MD2), a first wait time generator (15C) for generating a first pulse signal (PS1) according to the main deflector data (MD2), a second wait time generator (15D) for generating a second pulse signal (PS2) in synchronism with the first pulse signal (PS1), and a comparator (15E) for comparing the first and second pulse signals (PS1 and PS2) with each other and providing a drawing start signal (S3).
摘要翻译：带电粒子束曝光系统朝向连续移动的曝光物体（18）发射并偏转电子束（11a），并将半导体集成电路图案拉到物体上。该系统包括带电粒子束产生单元（11），用于偏转电子束（11a）的第一和第二偏转器（12和13），第一和第二偏转器驱动器（14和15），用于控制第一和第二偏转器（12和13），用于控制物体（18）的移动的平台驱动和控制单元（16），以及用于控制各个部件的输入和输出的控制器（17）。第二偏转器驱动器（15）至少包括用于接收主偏转器数据（MD1）和平台位置数据（STD）并提供校正的主偏转器数据（MD2）的数据校正单元（15A），偏转信号输出单元（15B）用于根据主偏转器数据（MD2）提供主偏转器设定信号（S1），用于根据主偏转器数据（MD2）产生第一脉冲信号（PS1）的第一等待时间发生器（15C），第二等待用于与第一脉冲信号（PS1）同步地产生第二脉冲信号（PS2）的时间发生器（15D）和用于将第一和第二脉冲信号（PS1和PS2）彼此比较的比较器（15E）绘图开始信号（S3）。

56. 发明授权

US5051556A Charged particle beam lithography system and a method thereof 失效
标题翻译：带电粒子束光刻系统及其方法
公开(公告)号：US5051556A
公开(公告)日：1991-09-24
申请号：US429500
申请日：1989-10-31
申请人： Kiichi Sakamoto , Hiroshi Yasuda , Akio Yamada
发明人： Kiichi Sakamoto , Hiroshi Yasuda , Akio Yamada
IPC分类号： H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/15 , H01J2237/30411 , H01J2237/31776
摘要： A charged particle beam lithography system comprises a beam source of a charged particle beam, a beam shaping aperture for providing a predetermined cross section to the charged particle beam, a first focusing system for focusing the charged particle beam on a first crossover point located on the optical axis, a second focusing system provided between the first crossover point and an object for focusing the charged particle beam on a second crossover point located on the optical axis, a beam deflection system for deflecting the electron beam such that the beam is moved over the surface of the object, a stage for supporting the object, a mask provided in a vicinity of said first focusing system, and addressing system for selectively deflecting the charged particle beam such that the charged particle beam is passed through a selected aperture on the mask, wherein the addressing system comprises an electrostatic deflector for variable shaping of the charged particle beam and an electromagnetic deflector for deflecting the charged particle beam such that the charged particle beam is selectively passed through selected one of the plurality of apertures except for the predetermined aperture.
摘要翻译：带电粒子束光刻系统包括带电粒子束的束源，用于向带电粒子束提供预定横截面的束形成孔;第一聚焦系统，用于将带电粒子束聚焦在位于所述带电粒子束上的第一交叉点光轴，第二聚焦系统，设置在第一交叉点和用于将带电粒子束聚焦在位于光轴上的第二交叉点上的物体之间，用于偏转电子束的光束偏转系统，使得光束在该光轴上移动物体的表面，用于支撑物体的台，设置在所述第一聚焦系统附近的掩模和用于选择性地偏转带电粒子束的寻址系统，使得带电粒子束通过掩模上的选定孔径，其中寻址系统包括用于可变成形带电粒子束和电磁体的静电偏转器用于偏转带电粒子束，使得带电粒子束选择性地通过除了预定孔径之外的多个孔中的选定的一个孔。

57. 发明授权

US5023462A Photo-cathode image projection apparatus for patterning a semiconductor device 失效
标题翻译：用于图案化半导体器件的光阴图像投影设备
公开(公告)号：US5023462A
公开(公告)日：1991-06-11
申请号：US327728
申请日：1989-03-23
申请人： Akio Yamada , Kiichi Sakamoto , Jinko Kudou , Hiroshi Yasuda
发明人： Akio Yamada , Kiichi Sakamoto , Jinko Kudou , Hiroshi Yasuda
IPC分类号： G03F7/20 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/70375 , G03F7/70725 , H01J37/3175 , H01J2237/0206 , H01J2237/0262 , H01J2237/153 , H01J2237/303 , H01J2237/30455 , H01J2237/31779
摘要： A photo-cathode image projection apparatus includes a light source for producing an optical beam, a photoelectron mask disposed so as to be irradiated by the optical beam and a photoelectron mask patterned according to a desired pattern with a material that emits photoelectrons in response to irradiation by an optical beam. The apparatus also includes a focusing device for focusing the emitted photoelectrons to form a photoelectron beam focused on the object, an acceleration electrode disposed along the path of the photoelectron beam for accelerating the photoelectrons in the beam, an elongated passage defined in the acceleration electrode to permit passage of a part of the photoelectron beam, and a stage disposed for supporting the object in a position such that the focused photoelectron beam is focused on the object. Also included is a voltage source for applying an acceleration voltage between the photoelectron mask and the acceleration electrode. The acceleration electrode is held at an electrical potential level that is identical to the electrical potential level of the stage, so that the object supported on the stage is electrically shielded from the photoelectron mask by the acceleration electrode.

58. 发明授权

US5278419A Electron beam exposure process for writing a pattern on an object by an electron beam with a compensation of the proximity effect 失效
标题翻译：电子束曝光过程，用于通过电子束在邻近效应的补偿上将图案写在物体上
公开(公告)号：US5278419A
公开(公告)日：1994-01-11
申请号：US925110
申请日：1992-08-06
申请人： Yasushi Takahashi , Hiroshi Yasuda
发明人： Yasushi Takahashi , Hiroshi Yasuda
IPC分类号： G03F7/20 , H01J37/302 , H01J37/317 , H01L21/027 , H01L21/30
CPC分类号： H01J37/3026 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31764 , H01J2237/31769
摘要： A method for writing a pattern on an object by a charged particle beam comprises the steps of: dividing a pattern to be written on the object into a plurality of pattern blocks that cause a proximity effect with each other; determining a pattern density for each of said pattern blocks; selecting a specific pattern block as a reference pattern block; setting a dose level of exposure of the charged particle beam to a reference dose level such that the reference pattern block is exposed with a predetermined total dose level which includes the contribution of the exposure by the charged particle beam and the contribution of the exposure by the backscattered charged particles; exposing the plurality of pattern blocks including the reference pattern block by the charged particle beam with the reference dose level; and exposing those pattern blocks that have the pattern density smaller than the pattern density of the reference pattern block by a defocused charged particle beam with a total dose level set such that the total dose level for those pattern blocks is substantially identical with the total dose level of the reference pattern block.
摘要翻译：通过带电粒子束在物体上写入图案的方法包括以下步骤：将要写入对象的图案划分成彼此相互接近效应的多个图案块; 确定每个所述图案块的图形密度; 选择特定图案块作为参考图案块; 将带电粒子束的剂量水平设置为参考剂量水平，使得参考图案块以预定的总剂量水平曝光，该预定总剂量水平包括通过带电粒子束的曝光的贡献以及曝光的贡献反向散射带电粒子; 通过具有参考剂量水平的带电粒子束曝光包括参考图案块的多个图案块; 并且将具有小于参考图案块的图案密度的图案密度的那些图案块通过设定为使得这些图案块的总剂量水平与总剂量水平基本相同的总剂量水平的散焦带电粒子束曝光的参考图案块。

59. 发明授权

US5004925A Method and apparatus for detecting alignment mark of semiconductor device 失效
标题翻译：用于检测半导体器件的对准标记的方法和装置
公开(公告)号：US5004925A
公开(公告)日：1991-04-02
申请号：US489224
申请日：1990-03-06
申请人： Yasushi Takahashi , Hiroshi Yasuda
发明人： Yasushi Takahashi , Hiroshi Yasuda
IPC分类号： H01L21/027 , H01J37/304
CPC分类号： H01J37/3045
摘要： In a semiconductor device having a leveling metal layer for forming a flat surface on an alignment mark of a level-difference, charged particles are irradiated and scanned onto a region of the alignment mark, and information generated from the region of the alignment mark in accordance with the thickness of metal of a metal leveling-layer in the level-difference of the alignment mark is detected. Therefore, even when the alignment mark formed by the level-difference in the semiconductor device is buried under the leveling metal layer, the alignment mark can be detected exactly without adding excessive processes.

60. 发明授权

US4950910A Electron beam exposure method and apparatus 失效
标题翻译：电子束曝光方法及装置
公开(公告)号：US4950910A
公开(公告)日：1990-08-21
申请号：US304242
申请日：1989-01-31
申请人： Hiroshi Yasuda , Junichi Kai , Shinji Miyaki , Yasushi Takahashi
发明人： Hiroshi Yasuda , Junichi Kai , Shinji Miyaki , Yasushi Takahashi
IPC分类号： G03F9/00 , G03F7/20 , H01J37/302 , H01J37/317 , H01L21/027 , H01L21/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3174 , H01J2237/30411 , H01J2237/31766 , H01J2237/31767
摘要： A method for depicting a pattern on a sample having a plurality of exposure areas placed on a movable stage by irradiating an electron beam. A pattern density is calculated from data of a pattern to be exposed for every exposure area on the sample. Next, the calculated pattern density is compared with a predetermined pattern density. Then when the calculated pattern density in a first exposure area contained in said exposure pattern area is less than the predetermined pattern density, the pattern is depicted therein by a continuous stage moving process. On the other hand, when the calculated pattern density in a second exposure area contained in the exposure areas is equal or greater than the predetermined pattern density, the pattern is depicted therein by a step and repeat process.

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