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1. 发明授权

US5841145A Method of and system for exposing pattern on object by charged particle beam 失效
标题翻译：通过带电粒子束对物体曝光图案的方法和系统
公开(公告)号：US5841145A
公开(公告)日：1998-11-24
申请号：US610350
申请日：1996-03-04
申请人： Takamasa Satoh , Yoshihisa Oae , Soichiro Arai , Kenichi Miyazawa , Hiroshi Yasuda , Manabu Ohno , Hitoshi Watanabe , Junichi Kai , Tomohiko Abe , Akio Yamada , Yasushi Takahashi
发明人： Takamasa Satoh , Yoshihisa Oae , Soichiro Arai , Kenichi Miyazawa , Hiroshi Yasuda , Manabu Ohno , Hitoshi Watanabe , Junichi Kai , Tomohiko Abe , Akio Yamada , Yasushi Takahashi
IPC分类号： H01J37/302
CPC分类号： H01J37/3023 , H01J2237/3175
摘要： By using a blanking aperture array BAA, the density of the bit map data in the portions where adjacent areas are linked is decreased toward the outside. On the lower surface of the holder of the BAA chip, a ball grid array wired to blanking electrodes is formed, to be pressed in contact against pads on a wiring base board. The registered bit map data for an isosceles right triangle are read out from address A=A0+�RA.multidot.i! (A0 and i are integers, � ! is an operator for integerizing), masked, and then shifted by bits to be deformed. From registered bit map data for proximity effect correction, the area which corresponds to the size of the object of correction and the required degree of proximity affect correction is extracted, and logic operation with the bit map data of the object of correction is performed to achieve proximity affect correction. Before figures data are expanded into bit map, a checksum is determined in units of bit map data corresponding to the range of one session of scanning over which continuous exposure is possible. A sine wave voltage is provided to an electrostatic deflector and during a one-shot exposure period, an electron beam is caused to scan for an integer number of times on a block of a mask and the positional misalignment of the electron beam at the lower aperture stop is corrected.
摘要翻译：通过使用消隐孔径阵列BAA，相邻区域连接的部分中的位图数据的密度朝向外部减小。在BAA芯片的保持器的下表面上形成布线到消隐电极的球栅阵列，以与接线基板上的焊盘压接。从地址A = A0 + [RAxi]（A0和i是整数，[]是整数化的运算符）读出等腰直角三角形的注册位图数据，被屏蔽，然后移位以变形。从用于邻近效应校正的注册位图数据中，提取对应于校正对象的大小的区域和所需的邻近度影响校正程度，并且执行校正对象的位图数据的逻辑运算以实现近距离影响校正。在将图形数据扩展为位图之前，以对应于可能进行连续曝光的一次扫描会话的范围的位图数据为单位确定校验和。向静电偏转器提供正弦波电压，并且在单次曝光期间，使电子束在掩模块上扫描整数次，并且使电子束在下孔处的位置偏移停止更正。

2. 发明授权

US5376802A Stencil mask and charge particle beam exposure method and apparatus using the stencil mask 失效
标题翻译：模板掩模和带电粒子束曝光方法和使用模板掩模的装置
公开(公告)号：US5376802A
公开(公告)日：1994-12-27
申请号：US62573
申请日：1993-05-18
申请人： Kiichi Sakamoto , Yasushi Takahashi , Yoshihisa Oae , Hiroshi Yasuda
发明人： Kiichi Sakamoto , Yasushi Takahashi , Yoshihisa Oae , Hiroshi Yasuda
IPC分类号： H01L21/027 , G03F1/20 , G03F7/20 , H01J37/04 , H01J37/317 , H01L21/30 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F7/2047 , H01J37/045 , H01J37/3174
摘要： A stencil mask is used for exposing a pattern on a wafer using a charged particle beam which is transmitted through the stencil mask. The stencil mask is made up of a plate, and at least a block pattern region formed on the plate. The block pattern region includes apertures of arbitrary shapes for transmitting the charged particle beam which irradiates the apertures within the block pattern region in one shot of the charged particle beam. The block pattern region forms a block mask in which a pair of confronting blanking electrodes is provided with respect to at least predetermined ones of the apertures.
摘要翻译：使用模板掩模来使用透射通过模板掩模的带电粒子束将晶片上的图案曝光。模板掩模由板形成，并且至少形成在板上的块图案区域。块图案区域包括任意形状的孔，用于传送在带电粒子束的一个镜头中照射块图案区域内的孔的带电粒子束。块图案区域形成块掩模，其中相对于孔中的至少预定孔设置一对相对的消隐电极。

3. 发明授权

US4980567A Charged particle beam exposure system using line beams 失效
标题翻译：使用线束的带电粒子束曝光系统
公开(公告)号：US4980567A
公开(公告)日：1990-12-25
申请号：US329833
申请日：1989-03-28
申请人： Hiroshi Yasuda , Junichi Kai , Toyotaka Kataoka , Yasushi Takahashi , Shinji Miyaki , Kiichi Sakamoto
发明人： Hiroshi Yasuda , Junichi Kai , Toyotaka Kataoka , Yasushi Takahashi , Shinji Miyaki , Kiichi Sakamoto
IPC分类号： H01J37/30 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3177
摘要： In a charged particle beam exposure system, a line of individual blanking apertures (39.sub.0 to 39.sub.255) is provided to form a line of beams which are individually blanked and unblanked by applying voltages to electrodes within the blanking apertures.

4. 发明授权

US4950910A Electron beam exposure method and apparatus 失效
标题翻译：电子束曝光方法及装置
公开(公告)号：US4950910A
公开(公告)日：1990-08-21
申请号：US304242
申请日：1989-01-31
申请人： Hiroshi Yasuda , Junichi Kai , Shinji Miyaki , Yasushi Takahashi
发明人： Hiroshi Yasuda , Junichi Kai , Shinji Miyaki , Yasushi Takahashi
IPC分类号： G03F9/00 , G03F7/20 , H01J37/302 , H01J37/317 , H01L21/027 , H01L21/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3174 , H01J2237/30411 , H01J2237/31766 , H01J2237/31767
摘要： A method for depicting a pattern on a sample having a plurality of exposure areas placed on a movable stage by irradiating an electron beam. A pattern density is calculated from data of a pattern to be exposed for every exposure area on the sample. Next, the calculated pattern density is compared with a predetermined pattern density. Then when the calculated pattern density in a first exposure area contained in said exposure pattern area is less than the predetermined pattern density, the pattern is depicted therein by a continuous stage moving process. On the other hand, when the calculated pattern density in a second exposure area contained in the exposure areas is equal or greater than the predetermined pattern density, the pattern is depicted therein by a step and repeat process.

5. 发明授权

US5401974A Charged particle beam exposure apparatus and method of cleaning the same 失效
标题翻译：带电粒子束曝光装置及其清洗方法
公开(公告)号：US5401974A
公开(公告)日：1995-03-28
申请号：US191458
申请日：1994-02-03
申请人： Yoshihisa Oae , Takamasa Satoh , Yasushi Takahashi , Kiichi Sakamoto , Hiroshi Yasuda , Soichiro Arai , Moritaka Nakamura
发明人： Yoshihisa Oae , Takamasa Satoh , Yasushi Takahashi , Kiichi Sakamoto , Hiroshi Yasuda , Soichiro Arai , Moritaka Nakamura
IPC分类号： H01J37/30 , H05H1/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3002 , H01J37/32082 , H01J37/32862 , H01J2237/022 , H01J2237/3175
摘要： In a charged particle beam exposure apparatus in which a charged particle beam is projected onto a member to be exposed to thereby form a pattern thereon, there are provided a plurality of electrodes disposed around an optical axis of the charged particle beam, a first unit for introducing a gas containing oxygen as a main component into an inside of the charged particle beam exposure apparatus including the plurality of electrodes and for holding the inside of the apparatus at a degree of vacuum between 0.1 Torr and 4 Torr, and a second unit for selectively applying either a high-frequency signal having a frequency between 100 kHz and 800 kHz or a reference signal to each of the plurality of electrodes. A plasma radical state of the gas is generated in the inside of the apparatus so that a deposition present in the apparatus can be eliminated.
摘要翻译：在带电粒子束曝光装置中，带电粒子束投射到待暴露的构件上，从而在其上形成图案，设置有围绕带电粒子束的光轴设置的多个电极，第一单元，将含有氧的气体作为主要成分引入到包括多个电极的带电粒子束曝光设备的内部，并将设备内部保持在0.1托和4托之间的真空度，以及用于选择性地将第二单元将频率在100kHz和800kHz之间的高频信号或参考信号施加到多个电极中的每一个。在装置的内部产生气体的等离子体自由基状态，从而可以消除装置中存在的沉积物。

6. 发明授权

US5262341A Blanking aperture array and charged particle beam exposure method 失效
标题翻译：消隐孔径阵列和带电粒子束曝光方法
公开(公告)号：US5262341A
公开(公告)日：1993-11-16
申请号：US991718
申请日：1992-12-16
申请人： Shunsuke Fueki , Hiroshi Yasuda , Kiichi Sakamoto , Yasushi Takahashi
发明人： Shunsuke Fueki , Hiroshi Yasuda , Kiichi Sakamoto , Yasushi Takahashi
IPC分类号： H01J37/04 , H01J37/302 , H01L21/268
CPC分类号： H01J37/045 , H01J37/3026
摘要： A blanking aperture array for use in a charged particle beam exposure has a substrate, at least m rows by n columns of apertures arranged two-dimensionally in the substrate, where each of the apertures have a pair of blanking electrodes and m and n are integers greater than one, and n m-bit shift registers provided on the substrate for applying voltages dependent on pattern data to m pairs of the blanking electrodes of the apertures in the ith column, where i=1, 2, . . . , n. The pattern data is related to a pattern which is to be exposed using the blanking aperture array.
摘要翻译：用于带电粒子束曝光的消隐孔径阵列具有衬底，至少m行×n列的孔在衬底中二维布置，其中每个孔具有一对消隐电极，m和n是整数大于1和n个m位移位寄存器，其设置在基板上，用于将第n列中的孔的m对对的图案数据施加电压，其中i = 1,2。。。，n。图案数据与使用消隐孔径阵列曝光的图案有关。

7. 发明授权

US5223719A Mask for use in a charged particle beam apparatus including beam passing sections 失效
标题翻译：用于包括光束通过部分的带电粒子束装置的掩模
公开(公告)号：US5223719A
公开(公告)日：1993-06-29
申请号：US724338
申请日：1991-07-05
申请人： Yasushi Takahashi , Kiichi Sakamoto , Yoshihisa Oae , Hiroshi Yasuda , Nobuyuki Yasutake
发明人： Yasushi Takahashi , Kiichi Sakamoto , Yoshihisa Oae , Hiroshi Yasuda , Nobuyuki Yasutake
IPC分类号： H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31761 , H01J2237/31776
摘要： A charged particle beam mask and apparatus and method of using the same employing a mask that includes a substrate and a plurality of substantially rectangular beam passing sections arranged in parallel and to have a trapezoidal shape. In addition, the masks having a matrix of irradiation areas formed thereon where each irradiation area has a matrix of block patterns, are aligned and selectively irradiated to form a desired pattern on an object.
摘要翻译：一种带电粒子束掩模及其采用掩模的装置及方法，该掩模包括基板和平行排列并具有梯形形状的多个大致矩形的光束通过部分。此外，在其上形成有照射区域具有块图案的矩阵的照射区域的矩阵的掩模被对准并选择性地照射以在物体上形成期望的图案。

8. 发明授权

US5144142A Blanking aperture array, method for producing blanking aperture array, charged particle beam exposure apparatus and charged particle beam exposure method 失效
标题翻译：空白孔阵列，生产空隙阵列的方法，充电颗粒光束曝光装置和充电颗粒光束曝光方法
公开(公告)号：US5144142A
公开(公告)日：1992-09-01
申请号：US525062
申请日：1990-05-18
申请人： Shunsuke Fueki , Hiroshi Yasuda , Kiichi Sakamoto , Yasushi Takahashi
发明人： Shunsuke Fueki , Hiroshi Yasuda , Kiichi Sakamoto , Yasushi Takahashi
IPC分类号： H01J37/04 , H01J37/302
CPC分类号： H01J37/045 , H01J37/3026
摘要： A blanking aperture array for use in a charged particle beam exposure has a substrate, at least m rows by n columns of apertures arranged two-dimensionally in the substrate, where each of the apertures have a pair of blanking electrodes and m and n are integers greater than one, and n m-bit shift registers provided on the substrate for applying voltages dependent on pattern data to m pairs of the blanking electrodes of the apertures in the ith column, where i=1, 2, . . . , n. The pattern data is relates to a pattern which is to be exposed using the blanking aperture array.

9. 发明授权

US5004925A Method and apparatus for detecting alignment mark of semiconductor device 失效
标题翻译：用于检测半导体器件的对准标记的方法和装置
公开(公告)号：US5004925A
公开(公告)日：1991-04-02
申请号：US489224
申请日：1990-03-06
申请人： Yasushi Takahashi , Hiroshi Yasuda
发明人： Yasushi Takahashi , Hiroshi Yasuda
IPC分类号： H01L21/027 , H01J37/304
CPC分类号： H01J37/3045
摘要： In a semiconductor device having a leveling metal layer for forming a flat surface on an alignment mark of a level-difference, charged particles are irradiated and scanned onto a region of the alignment mark, and information generated from the region of the alignment mark in accordance with the thickness of metal of a metal leveling-layer in the level-difference of the alignment mark is detected. Therefore, even when the alignment mark formed by the level-difference in the semiconductor device is buried under the leveling metal layer, the alignment mark can be detected exactly without adding excessive processes.

10. 发明授权

US5420433A Charged particle beam exposure apparatus 失效
标题翻译：带电粒子束曝光装置
公开(公告)号：US5420433A
公开(公告)日：1995-05-30
申请号：US214415
申请日：1994-03-18
申请人： Yoshihisa Oae , Yasushi Takahashi , Hiroshi Yasuda
发明人： Yoshihisa Oae , Yasushi Takahashi , Hiroshi Yasuda
IPC分类号： H01L21/027 , G03F7/20 , H01J37/30 , H01J37/317
CPC分类号： H01J37/3002 , H01J2237/022 , H01J2237/3175
摘要： A barrier electrode is formed above an article to be exposed so as to be opposite the surface of the article to be exposed. A voltage is applied to the barrier electrode so as to form a barrier electric field surrounding the optical axis of a charged particle beam and surrounding the article to be exposed.
摘要翻译：阻挡电极形成在要暴露的物品的上方，以与要暴露的物品的表面相对。向阻挡电极施加电压，以形成围绕带电粒子束的光轴并围绕待曝光的物品的阻挡电场。

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