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    • 1. 发明授权
    • Method of and system for exposing pattern on object by charged particle
beam
    • 通过带电粒子束对物体曝光图案的方法和系统
    • US5841145A
    • 1998-11-24
    • US610350
    • 1996-03-04
    • Takamasa SatohYoshihisa OaeSoichiro AraiKenichi MiyazawaHiroshi YasudaManabu OhnoHitoshi WatanabeJunichi KaiTomohiko AbeAkio YamadaYasushi Takahashi
    • Takamasa SatohYoshihisa OaeSoichiro AraiKenichi MiyazawaHiroshi YasudaManabu OhnoHitoshi WatanabeJunichi KaiTomohiko AbeAkio YamadaYasushi Takahashi
    • H01J37/302
    • H01J37/3023H01J2237/3175
    • By using a blanking aperture array BAA, the density of the bit map data in the portions where adjacent areas are linked is decreased toward the outside. On the lower surface of the holder of the BAA chip, a ball grid array wired to blanking electrodes is formed, to be pressed in contact against pads on a wiring base board. The registered bit map data for an isosceles right triangle are read out from address A=A0+�RA.multidot.i! (A0 and i are integers, � ! is an operator for integerizing), masked, and then shifted by bits to be deformed. From registered bit map data for proximity effect correction, the area which corresponds to the size of the object of correction and the required degree of proximity affect correction is extracted, and logic operation with the bit map data of the object of correction is performed to achieve proximity affect correction. Before figures data are expanded into bit map, a checksum is determined in units of bit map data corresponding to the range of one session of scanning over which continuous exposure is possible. A sine wave voltage is provided to an electrostatic deflector and during a one-shot exposure period, an electron beam is caused to scan for an integer number of times on a block of a mask and the positional misalignment of the electron beam at the lower aperture stop is corrected.
    • 通过使用消隐孔径阵列BAA,相邻区域连接的部分中的位图数据的密度朝向外部减小。 在BAA芯片的保持器的下表面上形成布线到消隐电极的球栅阵列,以与接线基板上的焊盘压接。 从地址A = A0 + [RAxi](A0和i是整数,[]是整数化的运算符)读出等腰直角三角形的注册位图数据,被屏蔽,然后移位以变形。 从用于邻近效应校正的注册位图数据中,提取对应于校正对象的大小的区域和所需的邻近度影响校正程度,并且执行校正对象的位图数据的逻辑运算以实现 近距离影响校正。 在将图形数据扩展为位图之前,以对应于可能进行连续曝光的一次扫描会话的范围的位图数据为单位确定校验和。 向静电偏转器提供正弦波电压,并且在单次曝光期间,使电子束在掩模块上扫描整数次,并且使电子束在下孔处的位置偏移 停止更正。