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51. 发明申请

US20100078713A1 SEMICONDUCTOR COMPONENT STRUCTURE WITH VERTICAL DIELECTRIC LAYERS 有权
标题翻译：半导体元件结构与垂直电介质层
公开(公告)号：US20100078713A1
公开(公告)日：2010-04-01
申请号：US12241828
申请日：2008-09-30
申请人： Anton Mauder , Stefan Sedlmaier , Ralf Erichsen , Hans Weber , Oliver Haeberlen , Franz Hirler
发明人： Anton Mauder , Stefan Sedlmaier , Ralf Erichsen , Hans Weber , Oliver Haeberlen , Franz Hirler
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L21/76224 , H01L27/0629 , H01L29/0646 , H01L29/0653 , H01L29/0878 , H01L29/407 , H01L29/66734 , H01L29/7804
摘要： A method for producing a semiconductor structure and a semiconductor component are described.
摘要翻译：对半导体结构体及半导体部件的制造方法进行说明。

52. 发明授权

US07459365B2 Method for fabricating a semiconductor component 有权
标题翻译：半导体部件的制造方法
公开(公告)号：US07459365B2
公开(公告)日：2008-12-02
申请号：US11540922
申请日：2006-09-29
申请人： Michael Rüb , Herbert Schäfer , Armin Willmeroth , Anton Mauder , Stefan Sedlmaier , Roland Rupp , Manfred Pippan , Hans Weber , Frank Pfirsch , Franz Hirler , Hans-Joachim Schulze
发明人： Michael Rüb , Herbert Schäfer , Armin Willmeroth , Anton Mauder , Stefan Sedlmaier , Roland Rupp , Manfred Pippan , Hans Weber , Frank Pfirsch , Franz Hirler , Hans-Joachim Schulze
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L21/76224 , H01L29/0653 , H01L29/165 , H01L29/66734 , H01L29/7804 , H01L29/7849
摘要： The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a drift zone region proceeding from the front side of a semiconductor body, a sacrificial layer is produced on at least a portion of the sidewalls of the trench and at least a portion of the trench is filled with a semiconductor material which is chosen such that the quotient of the net dopant charge of the semiconductor material in the trench and the total area of the sacrificial layer on the sidewalls of the trench between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material, and the sacrificial layer is replaced with a dielectric.
摘要翻译：公开了具有半导体主体的半导体部件的制造，其中布置有具有在垂直方向上延伸并且非常深地延伸到半导体本体中的截面的非常薄的电介质层。在一种方法中，在从半导体主体的前侧开始的漂移区域中形成沟槽，在沟槽的至少一部分侧壁上产生牺牲层，并且沟槽的至少一部分填充有半导体材料被选择为使得沟槽中的半导体材料的净掺杂剂电荷的商和半导体材料和漂移区域之间的沟槽的侧壁上的牺牲层的总面积小于击穿电荷的半导体材料，并且牺牲层被电介质代替。

53. 发明申请

US20050001852A1 System and method for inserting content into an image sequence 有权
标题翻译：将内容插入到图像序列中的系统和方法
公开(公告)号：US20050001852A1
公开(公告)日：2005-01-06
申请号：US10613273
申请日：2003-07-03
申请人： John Dengler , Erik Garci , Brian Cox , Kenneth Tolman , Hans Weber , Gerard Hall
发明人： John Dengler , Erik Garci , Brian Cox , Kenneth Tolman , Hans Weber , Gerard Hall
IPC分类号： G06T15/20 , G09G5/00 , H04N5/272
CPC分类号： G06T15/20 , H04N5/272 , H04N5/2723
摘要： A real-time system and method for inserting perspective correct content into an image sequence are presented. The invention inserts the content with the location, size, orientation, shape and occlusion properties that are appropriate for the camera view represented by the image sequence. Both static and dynamic content insert positions are supported. The location, size, orientation and shape of the inserted content are determined independently of the image sequence content. Furthermore, no knowledge of three dimensional real world space locations or real world measurements, as related to the content of the image sequence, is used during the content insert process.
摘要翻译：提出了将透视正确内容插入到图像序列中的实时系统和方法。本发明将内容插入适用于由图像序列表示的相机视图的位置，大小，方向，形状和遮挡特性。支持静态和动态内容插入位置。独立于图像序列内容确定插入内容的位置，大小，方向和形状。此外，在内容插入过程中不使用与图像序列的内容相关的三维真实世界空间位置或真实世界测量的知识。

54. 发明授权

US06833298B2 Method for fabricating a semiconductor component having at least one transistor cell and an edge cell 有权
标题翻译：用于制造具有至少一个晶体管单元和边缘单元的半导体元件的方法
公开(公告)号：US06833298B2
公开(公告)日：2004-12-21
申请号：US10384998
申请日：2003-03-10
申请人： Hans Weber
发明人： Hans Weber
IPC分类号： H01L218234
CPC分类号： H01L29/7802 , H01L29/41766
摘要： The present invention relates to a method for fabricating a semiconductor component having at least one transistor cell and an edge cell. The method includes providing a semiconductor body having a channel zone in the region of a transistor cell, a first terminal zone in the region of an edge cell, an insulation layer applied to a front side of the semiconductor body, and an electrode layer applied to the insulation layer. The electrode layer and the insulation layer are patterned in the region of the edge cell and the transistor cell and serve for fabricating complementary doped regions in the channel zone and the first terminal zone. In the region of the edge cell, the patterned electrode layer serves for the subsequent removal of the complementary doped zone during the fabrication of a contact hole.
摘要翻译：本发明涉及一种制造具有至少一个晶体管单元和边缘单元的半导体元件的方法。该方法包括提供在晶体管单元的区域中具有沟道区的半导体本体，在边缘单元的区域中的第一端子区，施加到半导体本体的前侧的绝缘层，以及施加到绝缘层。电极层和绝缘层在边缘电池和晶体管单元的区域中被图案化，并且用于在沟道区和第一端区中制造互补掺杂区。在边缘单元的区域中，图案化的电极层用于随后在制造接触孔期间去除互补掺杂区。

55. 发明授权

US4976206A Mechanism for the removal of slag in incineration plants 失效
标题翻译：焚烧厂除渣机理
公开(公告)号：US4976206A
公开(公告)日：1990-12-11
申请号：US422966
申请日：1989-10-18
申请人： Hansruedi Steiner , Hans Weber
发明人： Hansruedi Steiner , Hans Weber
IPC分类号： F23J1/02
CPC分类号： F23J1/02 , F23J2900/01021
摘要： A mechanism for the removal of incombustible residues from an incineration plant includes a slag shaft, a slag tank positioned under a mouth of the slag shaft and filled with water extending up to the mouth of the shaft. The incombustible residues dropping from the incineration plant furnace grate through the slag shaft collect in the slag tank and are discharged therefrom by a pusher plate via an upwardly sloping discharge path. The pusher plate is in operative connection with two thrust piston drives via two thrust rods and two rocking levers. The joint connecting the thrust rod with the rocking lever is arranged in such a way that it is not immersed in the water bath either in the rear position of the pusher plate or in the discharge position of the pusher plate. Through the direct coupling to the joint, the thrust rod and the rocking lever can operate in the same vertical plane, so that no additional moments are exerted on the rocking shaft. This leads to a longer life for the lint and also to increased operational reliability and easier maintenance.
摘要翻译：用于从焚化厂除去不可燃残余物的机构包括炉渣杆，位于炉渣杆口下方的炉渣罐，并且填充有直到轴的口部延伸的水。从焚烧炉炉排落下的不燃物残渣通过炉渣收集在渣槽中，并通过向上倾斜的排放路径由推动板排出。推动板通过两个推力杆和两个摇杆与两个推力活塞驱动器操作连接。将推杆与摆动杆连接的连接部配置成不会在推动板的后方位置或推动板的排出位置处浸入水浴中。通过与接头的直接连接，推杆和摇杆可以在相同的垂直平面上运行，从而不会在摇摆轴上施加额外的力矩。这样可以延长棉绒的使用寿命，同时提高操作的可靠性和更容易的维护。

56. 发明授权

US4614804A Anthraquinoid dyes 失效
标题翻译：蒽醌染料
公开(公告)号：US4614804A
公开(公告)日：1986-09-30
申请号：US531995
申请日：1983-09-14
申请人： Gerhard Epple , Reinhold Krallmann , Wolf-Dieter Kermer , Hans Weber
发明人： Gerhard Epple , Reinhold Krallmann , Wolf-Dieter Kermer , Hans Weber
IPC分类号： C09B1/514 , C09B1/51 , C09B1/516 , D06P3/60 , C07D277/82
CPC分类号： C09B1/51 , D06P3/6041
摘要： Dyes of the formula ##STR1## where A and B are H and/or ##STR2## Y is unsubstituted or substituted phenyl, ##STR3## or unsubstituted or substituted benzothiazolyl or benzoxazolyl and R is unsubstituted or substituted alkyl, unsubstituted or substituted phenyl, or alkoxy, alkoxyalkoxy, phenalkyl or alkoxycarboalkyl, are suitable for dyeing and printing cellulose swollen with water-miscible swelling agents and cellulose-containing fiber material.
摘要翻译：式（I）的染料其中A和B为H和/或Y为未取代或取代的苯基，或未取代或取代的苯并噻唑基或苯并恶唑基，R为未取代或取代的烷基，未取代或取代的苯基或烷氧基，烷氧基烷氧基，苯烷基或烷氧基羧基烷基适用于用水混溶性溶胀剂和含纤维素纤维材料染色和印刷纤维素溶胀。

57. 发明授权

US09097777B2 Method of magnetic resonance imaging for the selection and recording of curved slices 有权
标题翻译：用于选择和记录弯曲切片的磁共振成像方法
公开(公告)号：US09097777B2
公开(公告)日：2015-08-04
申请号：US13443908
申请日：2012-04-11
申请人： Hans Weber , Maxim Zaitsev , Daniel Gallichan , Juergen Hennig
发明人： Hans Weber , Maxim Zaitsev , Daniel Gallichan , Juergen Hennig
IPC分类号： G01R33/483
CPC分类号： G01R33/4833 , G01R33/483 , G01R33/4835 , G01R33/4836
摘要： A method of MR imaging applies a magnetic field Bgrad1 having a spatially non-linear dependence to select a volume of at least one curved slice. The slice is described by its midsurface AM, a volume of the selected slice being made up of nν partial volumes in each of which gradients of at least one pair of remaining superimposed magnetic fields Bgradi (i>1) exhibit an angle dependence of 70° to 110° with respect to one another and with respect to the normal of the midsurface AM. At least one superimposed magnetic field of the respective pair exhibits a spatially non-linear dependence and combinations of these pairs are used for spatial encoding. In this way, curved surfaces can be mapped efficiently in high resolution and the method can be adapted to the slice shape.
摘要翻译： MR成像的方法应用具有空间非线性依赖性的磁场Bgrad1来选择至少一个弯曲切片的体积。切片由其中心面AM描述，所选切片的体积由n＆ngr组成; 至少一对剩余叠加磁场Bgradi（i> 1）的梯度中的每一个的部分体积相对于彼此表现出70°至110°的角度依赖性，并且相对于中空面AM的法线呈现角度依赖性。相应对的至少一个叠加的磁场表现出空间非线性相关性，并且这些对的组合用于空间编码。以这种方式，可以高分辨率地有效地映射曲面，并且该方法可以适应于切片形状。

58. 发明授权

US08866253B2 Semiconductor arrangement with active drift zone 有权
标题翻译：具有主动漂移区的半导体装置
公开(公告)号：US08866253B2
公开(公告)日：2014-10-21
申请号：US13362038
申请日：2012-01-31
申请人： Rolf Weis , Gerald Deboy , Michael Treu , Armin Willmeroth , Hans Weber
发明人： Rolf Weis , Gerald Deboy , Michael Treu , Armin Willmeroth , Hans Weber
IPC分类号： H01L27/00
CPC分类号： H01L27/0207 , H01L21/84 , H01L21/845 , H01L27/06 , H01L27/0629 , H01L27/088 , H01L27/0886 , H01L27/1211 , H01L29/4236 , H01L29/78 , H03K17/063 , H03K17/102
摘要： A semiconductor device arrangement includes a first semiconductor device having a load path and a plurality of second semiconductor devices, each having a load path between a first and a second load terminal and a control terminal. The second semiconductor devices have their load paths connected in series and connected in series to the load path of the first semiconductor device. Each of the second semiconductor devices has its control terminal connected to the load terminal of one of the other second semiconductor devices, and one of the second semiconductor devices has its control terminal connected to one of the load terminals of the first semiconductor device. Each of the second semiconductor devices has at least one device characteristic. At least one device characteristic of at least one of the second semiconductor devices is different from the corresponding device characteristic of others of the second semiconductor devices.
摘要翻译：半导体器件布置包括具有负载路径的第一半导体器件和多个第二半导体器件，每个第二半导体器件具有在第一和第二负载端子与控制端子之间的负载路径。第二半导体器件的负载路径串联连接并与第一半导体器件的负载路径串联连接。每个第二半导体器件的控制端子连接到其它第二半导体器件之一的负载端子，并且其中一个第二半导体器件的控制端子连接到第一半导体器件的负载端子之一。每个第二半导体器件具有至少一个器件特性。第二半导体器件中的至少一个的至少一个器件特征与第二半导体器件中的其它器件的相应器件特性不同。

59. 发明授权

US08866221B2 Super junction semiconductor device comprising a cell area and an edge area 有权
标题翻译：超结半导体器件包括单元区域和边缘区域
公开(公告)号：US08866221B2
公开(公告)日：2014-10-21
申请号：US13539973
申请日：2012-07-02
申请人： Franz Hirler , Hans Weber , Hans-Joachim Schulze , Uwe Wahl
发明人： Franz Hirler , Hans Weber , Hans-Joachim Schulze , Uwe Wahl
IPC分类号： H01L29/66
CPC分类号： H01L29/66712 , H01L29/0634 , H01L29/0649 , H01L29/0653 , H01L29/0696 , H01L29/1095 , H01L29/161 , H01L29/167 , H01L29/408 , H01L29/7395 , H01L29/7811 , H01L29/8611
摘要： A drift layer of a super junction semiconductor device includes first portions of a first conductivity type and second portions of a second conductivity type opposite to the first conductivity type. The first and second portions are formed both in a cell area and in an edge area surrounding the cell area, wherein an on-state or forward current through the drift layer flows through the first portions in the cell area. At least one of the first and second portions other than the first portions in the cell area includes an auxiliary structure or contains auxiliary impurities to locally reduce the avalanche rate. Locally reducing the avalanche rate increases the total voltage blocking capability of the super junction semiconductor device.
摘要翻译：超结半导体器件的漂移层包括第一导电类型的第一部分和与第一导电类型相反的第二导电类型的第二部分。第一和第二部分在单元区域和围绕单元区域的边缘区域中形成，其中通过漂移层的导通状态或正向电流流过单元区域中的第一部分。电池区域中除了第一部分之外的第一和第二部分中的至少一个包括辅助结构或包含辅助杂质以局部降低雪崩率。本地降低雪崩率提高了超结半导体器件的总电压阻断能力。

60. 发明授权

US08399325B2 Method for producing an electrode structure 有权
标题翻译：电极结构体的制造方法
公开(公告)号：US08399325B2
公开(公告)日：2013-03-19
申请号：US13240308
申请日：2011-09-22
申请人： Hans Weber , Stefan Gamerith , Roman Knoefler , Kurt Sorschag , Anton Mauder
发明人： Hans Weber , Stefan Gamerith , Roman Knoefler , Kurt Sorschag , Anton Mauder
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/0653 , H01L29/1095 , H01L29/407 , H01L29/4236 , H01L29/4238 , H01L29/66734 , H01L29/7803
摘要： A method for producing a semiconductor device with an electrode structure includes providing a semiconductor body with a first surface, and with a first sacrificial layer extending in a vertical direction of the semiconductor body from the first surface, and forming a first trench extending from the first surface into the semiconductor body. The first trench is formed at least by removing the sacrificial layer in a section adjacent to the first surface. The method further includes forming a second trench by isotropically etching the semiconductor body in the first trench, forming a dielectric layer which covers sidewalls of the second trench, and forming an electrode on the dielectric layer in the second trench, the electrode and the dielectric layer in the second trench forming the electrode structure.
摘要翻译：一种用于制造具有电极结构的半导体器件的方法，包括：提供具有第一表面的半导体本体，以及从所述第一表面沿着所述半导体本体的垂直方向延伸的第一牺牲层，以及形成从所述第一表面延伸的第一沟槽表面进入半导体体。至少通过在与第一表面相邻的部分中去除牺牲层来形成第一沟槽。该方法还包括通过在第一沟槽中各向同性蚀刻半导体本体来形成第二沟槽，形成覆盖第二沟槽侧壁的电介质层，以及在第二沟槽，电极和电介质层中的电介质层上形成电极在形成电极结构的第二沟槽中。

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