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51. 发明申请

US20090142560A1 THIN FILM DEVICE WITH MINIMIZED SPATIAL VARIATION OF LOCAL MEAN HEIGHT 有权
标题翻译：具有最小化的局部平均高度的空间变化的薄膜装置
公开(公告)号：US20090142560A1
公开(公告)日：2009-06-04
申请号：US11948867
申请日：2007-11-30
申请人： Warren Jackson , Carl P. Taussig , Ping Mei , Albert Jeans , Han-Jun Kim
发明人： Warren Jackson , Carl P. Taussig , Ping Mei , Albert Jeans , Han-Jun Kim
IPC分类号： B32B7/02
CPC分类号： B82Y10/00 , B32B7/02 , B82Y40/00 , G03F7/0002 , Y10T428/24942
摘要： This invention provides a thin film device with minimized spatial variation of local mean height. More specifically, the thin film device has a substrate and at least one first structure having a first spatially varying weighted local mean height determined by a layer weighting function. The first structure has a first maximum height, a first minimum height and a first variation for a given averaging area. A compensation structure is also provided upon the substrate, the compensation structure having a second spatially varying weighted local mean height determined by the layer weighting function. The compensation structure also has a second maximum height, a second minimum height and a second variation for the given averaging area. The first structure and compensation structure combine to provide a combined structure upon the substrate with minimized spatial variation of a combined weighted local mean.
摘要翻译：本发明提供一种具有最小的局部平均高度的空间变化的薄膜装置。更具体地，薄膜器件具有衬底和至少一个具有由层加权函数确定的具有第一空间变化的加权局部平均高度的第一结构。第一结构具有给定平均区域的第一最大高度，第一最小高度和第一变化。还在衬底上提供补偿结构，补偿结构具有由层加权函数确定的第二空间变化的加权局部平均高度。补偿结构还具有给定平均区域的第二最大高度，第二最小高度和第二变化。第一结构和补偿结构结合在一起，在基底上提供组合结构，使组合加权局部平均值具有最小的空间变化。

52. 发明授权

US07521313B2 Thin film device active matrix by pattern reversal process 有权
标题翻译：薄膜器件有源矩阵通过图案反转处理
公开(公告)号：US07521313B2
公开(公告)日：2009-04-21
申请号：US11037887
申请日：2005-01-18
申请人： Ping Mei
发明人： Ping Mei
IPC分类号： H01L21/8238
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/1218 , H01L29/78603 , H01L29/7869
摘要： This invention provides a method of fabricating an active matrix of thin film devices through a pattern reversal self aligned imprint lithography (SAIL) process. The method includes providing a substrate and depositing at least one layer of material upon the substrate. A pattern is then established upon the layer of material, the pattern providing at least one exposed area and at least one covered area of the layer of material. The exposed areas are treated to provide etch resistance to the material and reverse the pattern. Subsequent etching removes the etch susceptible material, the etch resistant material remaining. A thin-film stack is then deposited upon the remaining etch resistant material. These deposited thin-films are then processed in accordance with the desired characteristics of the thin film devices.
摘要翻译：本发明提供一种通过图案反转自对准压印光刻（SAIL）工艺制造薄膜器件的有源矩阵的方法。该方法包括提供衬底并在衬底上沉积至少一层材料。然后在材料层上建立图案，该图案提供材料层的至少一个暴露区域和至少一个覆盖区域。处理暴露的区域以对材料提供耐蚀刻性并逆转图案。随后的蚀刻去除蚀刻敏感材料，留下耐蚀刻材料。然后将薄膜堆叠沉积在剩余的耐蚀刻材料上。然后根据薄膜器件的期望特性对这些沉积的薄膜进行处理。

53. 发明申请

US20080229950A1 SEAMLESS IMPRINT ROLLER AND METHOD OF MAKING 审中-公开
标题翻译：无缝印花滚筒及其制作方法
公开(公告)号：US20080229950A1
公开(公告)日：2008-09-25
申请号：US11688086
申请日：2007-03-19
申请人： Ping Mei , Carl P. Taussig , Angeles Marcia Almanza-Workman , Albert H. Jeans
发明人： Ping Mei , Carl P. Taussig , Angeles Marcia Almanza-Workman , Albert H. Jeans
IPC分类号： B41N3/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： This invention provides a structure and method of forming a seamless imprint roller. The method includes providing a translucent cylindrical core. At least one uniform seamless layer of material is deposited about the cylindrical core. This uniform seamless layer of material is then processed to define a translucent three dimensional imprint pattern seamlessly disposed about the core. The pattern includes at least one structure extending from the core and having one or more elevations. The pattern and more specifically the structures are inherently aligned to one another and the cylindrical core.
摘要翻译：本发明提供一种形成无缝压印辊的结构和方法。该方法包括提供半透明的圆柱形芯。至少一个均匀的无缝层材料沉积在圆柱形芯上。然后处理这种均匀的无缝材料层以限定围绕芯部无缝地设置的半透明的三维压印图案。该图案包括从芯部延伸并且具有一个或多个高度的至少一个结构。该图案，更具体地说，结构彼此固定地对准和圆柱形芯。

54. 发明授权

US07251783B2 Large area storage display 失效
标题翻译：大面积存储显示
公开(公告)号：US07251783B2
公开(公告)日：2007-07-31
申请号：US10286028
申请日：2002-11-01
申请人： Warren Jackson , Ping Mei
发明人： Warren Jackson , Ping Mei
IPC分类号： G03B15/00
CPC分类号： G06F1/1601 , G02F1/136286 , G02F1/1368 , G06F3/1423
摘要： A large area display workstation provides a liquid crystal display, configured to produce an image. The electrical components of the liquid crystal display are disposed on a substrate through a large area fabrication technique. The workstation has a first, high-resolution video display, and the large area display is a second, lower-resolution file identification display. The computer displays a user-selected file in a high-resolution format on the high-resolution video display for manipulation, and displays a plurality of file indicators in a low-resolution format on the large area display.
摘要翻译：大面积显示工作站提供液晶显示器，用于产生图像。液晶显示器的电气部件通过大面积制造技术设置在基板上。工作站具有第一个高分辨率视频显示，大面积显示是第二个较低分辨率的文件识别显示。计算机在高分辨率视频显示器上以高分辨率格式显示用户选择的文件进行操作，并在大面积显示器上以低分辨率格式显示多个文件指示符。

55. 发明申请

US20070040491A1 Thin film devices and methods for forming the same 有权
标题翻译：薄膜器件及其形成方法
公开(公告)号：US20070040491A1
公开(公告)日：2007-02-22
申请号：US11589580
申请日：2006-10-30
申请人： Ping Mei , Craig Perlov , Albert Jeans , Carl Taussig
发明人： Ping Mei , Craig Perlov , Albert Jeans , Carl Taussig
IPC分类号： H01J1/62
CPC分类号： H01L29/42384 , H01L29/6675 , H01L29/78645 , H01L29/7869
摘要： Thin film devices and methods for forming the same are disclosed herein. A method for forming a thin film device includes forming a first at least semi-conductive strip located at a first height relative to a surface of a substrate, and forming a second at least semi-conductive strip adjacent to the first at least semi-conductive strip. The second strip is located at a second height relative to the substrate surface, and the second height is different than the first height. A nano-gap is formed between the first and second at least semi-conductive strips.
摘要翻译：本文公开了薄膜器件及其形成方法。一种用于形成薄膜器件的方法包括形成位于相对于衬底表面的第一高度处的第一至少半导电条，以及形成与第一至少半导体相邻的第二至少半导电条跳闸。第二条带相对于基板表面位于第二高度，第二高度不同于第一高度。在第一和第二至少半导电条之间形成纳米间隙。

56. 发明授权

US07071548B2 Semiconductor coated with a mixture containing an adhesion promoter 有权
标题翻译：用包含粘合促进剂的混合物涂覆半导体
公开(公告)号：US07071548B2
公开(公告)日：2006-07-04
申请号：US10696825
申请日：2003-10-30
申请人： Albert Hua Jeans , Ping Mei
发明人： Albert Hua Jeans , Ping Mei
IPC分类号： H01L23/12 , H01L21/20 , C04B37/00
CPC分类号： H01L21/02282 , C09D175/04 , H01L21/312
摘要： An article comprises a semiconductor substrate and a coating mixture on the semiconductor substrate. The coating mixture Is comprised of adhesion promoter and photopolymer. The adhesion promoter contains α-amino propyltriethoxysilane in organic solution.
摘要翻译：一种制品包括在半导体衬底上的半导体衬底和涂层混合物。涂料混合物由粘合促进剂和光聚合物组成。粘合促进剂在有机溶液中含有α-氨基丙基三乙氧基硅烷。

57. 发明申请

US20050157547A1 Thin film transistor memory device 有权
标题翻译：薄膜晶体管存储器件
公开(公告)号：US20050157547A1
公开(公告)日：2005-07-21
申请号：US10985762
申请日：2004-11-09
申请人： Ping Mei , James Easton
发明人： Ping Mei , James Easton
IPC分类号： G11C16/04 , G11C5/06 , G11C16/02 , G11C17/16 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792 , G11C16/06
CPC分类号： G11C17/16
摘要： A memory device includes a memory array of thin film transistor (TFT) memory cells. The memory cells include a floating gate separated from a gate electrode portion of a gate line by an insulator. The gate electrode portion includes a diffusive conductor that diffuses through the insulator under the application of a write voltage. The diffusive conductor forms a conductive path through the insulator that couples the gate line to the floating gate, changing the gate capacitance and therefore the state of the memory cell. The states of the memory cells are detectable as the differing current values for the memory cells. The memory cells are three terminal devices, and read currents do not pass through the conductive paths in the memory cells during read operations. This renders the memory cells robust, because read currents will not interfere with the storage mechanism in the memory cells. The memory array can be fabricated using multiple steps using the same mask. The use of a single mask for multiple steps reduces the time and cost involved in fabricating the memory array.
摘要翻译：存储器件包括薄膜晶体管（TFT）存储单元的存储器阵列。存储单元包括通过绝缘体与栅极线的栅极部分分离的浮动栅极。栅电极部分包括在施加写入电压下扩散通过绝缘体的漫射导体。扩散导体形成通过绝缘体的导电路径，其将栅极线耦合到浮动栅极，改变栅极电容并因此改变存储器单元的状态。存储器单元的状态可被检测为存储器单元的不同电流值。存储单元是三个终端设备，并且读取电流在读取操作期间不通过存储器单元中的导电路径。这使得存储器单元牢固，因为读取电流将不会干扰存储器单元中的存储机制。可以使用相同的掩模使用多个步骤来制造存储器阵列。对于多个步骤使用单个掩模减少了制造存储器阵列所涉及的时间和成本。

58. 发明授权

US06887792B2 Embossed mask lithography 有权
标题翻译：压花掩模光刻
公开(公告)号：US06887792B2
公开(公告)日：2005-05-03
申请号：US10244862
申请日：2002-09-17
申请人： Craig Perlov , Carl Taussig , Ping Mei
发明人： Craig Perlov , Carl Taussig , Ping Mei
IPC分类号： H01L21/3065 , H01L23/50 , H05K1/00 , H05K3/00 , H05K3/06 , H05K3/20 , H01L21/311
CPC分类号： H05K3/20 , H05K1/0289 , H05K3/0041 , H05K3/061 , H05K2203/0108 , H05K2203/1476 , Y10S438/942
摘要： Disclosed are layered groupings and methods for constructing digital circuitry, such as memory known as Permanent Inexpensive Rugged Memory (PIRM) cross point arrays which can be produced on flexible substrates by patterning and curing through the use of a transparent embossing tool.
摘要翻译：公开了用于构建数字电路的分层分组和方法，例如称为永久性廉价坚固存储器（PIRM）交叉点阵列的存储器，其可以通过使用透明压花工具图案化和固化而在柔性基板上制造。

59. 发明授权

US06690597B1 Multi-bit PROM memory cell 有权
标题翻译：多位PROM存储单元
公开(公告)号：US06690597B1
公开(公告)日：2004-02-10
申请号：US10422439
申请日：2003-04-24
申请人： Craig M. Perlov , Ping Mei
发明人： Craig M. Perlov , Ping Mei
IPC分类号： G11C700
CPC分类号： G11C11/5692 , G11C17/16 , G11C2216/26
摘要： A memory cell comprises at least two antifuses in series with a diode. Each antifuse expresses a different resistance from the others when blown, and each requires an escalating programming voltage over the last to be programmed. The antifuse structures differ in their respective geometries and materials so that a low programming voltage will blow the more sensitive fuse first, and a higher voltages will program the lesser sensitive fuses thereafter.
摘要翻译：存储单元包括与二极管串联的至少两个反熔丝。每个反熔丝在吹制时表现出与其他反射体不同的电阻，并且每个反熔丝需要在最后编程的程序电压上升。反熔丝结构在其各自的几何形状和材料上是不同的，因此低编程电压将首先吹出更敏感的熔丝，并且更高的电压将对较小的敏感熔丝编程。

60. 发明授权

US06448102B1 Method for nitride based laser diode with growth substrate removed 有权
标题翻译：消除生长衬底的基于氮化物的激光二极管的方法
公开(公告)号：US06448102B1
公开(公告)日：2002-09-10
申请号：US09277328
申请日：1999-03-26
申请人： Michael A. Kneissl , David P. Bour , Ping Mei , Linda T. Romano
发明人： Michael A. Kneissl , David P. Bour , Ping Mei , Linda T. Romano
IPC分类号： H01L2100
CPC分类号： H01L21/6835 , B82Y20/00 , H01L21/2007 , H01L27/153 , H01L33/0079 , H01L2221/68359 , H01L2221/68368 , H01L2224/83192 , H01L2224/83895 , H01L2924/01079 , H01S5/0217 , H01S5/34333 , H01S5/4025 , H01S5/4031
摘要： A method for placing nitride laser diode arrays on a thermally conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after a thermally conducting substrate has been bonded to the side opposite the sapphire substrate.
摘要翻译：描述了将氮化物激光二极管阵列放置在导热衬底上的方法。该方法使用准分子激光器，在将导热衬底粘合到与蓝宝石衬底相对的一侧之后，将氮化物激光二极管与蓝宝石生长衬底分离。

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