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1. 发明授权

US07304364B2 Embossed mask lithography 有权
标题翻译：压花掩模光刻
公开(公告)号：US07304364B2
公开(公告)日：2007-12-04
申请号：US10885842
申请日：2004-07-06
申请人： Craig Perlov , Carl Taussig , Ping Mei
发明人： Craig Perlov , Carl Taussig , Ping Mei
IPC分类号： H01L29/00 , G11C11/34
CPC分类号： H05K3/20 , H05K1/0289 , H05K3/0041 , H05K3/061 , H05K2203/0108 , H05K2203/1476 , Y10S438/942
摘要： Disclosed are layered groupings and methods for constructing digital circuitry, such as memory known as Permanent Inexpensive Rugged Memory (PIRM) cross point arrays which can be produced on flexible substrates by patterning and curing through the use of a transparent embossing tool.
摘要翻译：公开了用于构建数字电路的分层分组和方法，例如称为永久性廉价坚固存储器（PIRM）交叉点阵列的存储器，其可以通过使用透明压花工具图案化和固化而在柔性基板上制造。

2. 发明申请

US20070040491A1 Thin film devices and methods for forming the same 有权
标题翻译：薄膜器件及其形成方法
公开(公告)号：US20070040491A1
公开(公告)日：2007-02-22
申请号：US11589580
申请日：2006-10-30
申请人： Ping Mei , Craig Perlov , Albert Jeans , Carl Taussig
发明人： Ping Mei , Craig Perlov , Albert Jeans , Carl Taussig
IPC分类号： H01J1/62
CPC分类号： H01L29/42384 , H01L29/6675 , H01L29/78645 , H01L29/7869
摘要： Thin film devices and methods for forming the same are disclosed herein. A method for forming a thin film device includes forming a first at least semi-conductive strip located at a first height relative to a surface of a substrate, and forming a second at least semi-conductive strip adjacent to the first at least semi-conductive strip. The second strip is located at a second height relative to the substrate surface, and the second height is different than the first height. A nano-gap is formed between the first and second at least semi-conductive strips.
摘要翻译：本文公开了薄膜器件及其形成方法。一种用于形成薄膜器件的方法包括形成位于相对于衬底表面的第一高度处的第一至少半导电条，以及形成与第一至少半导体相邻的第二至少半导电条跳闸。第二条带相对于基板表面位于第二高度，第二高度不同于第一高度。在第一和第二至少半导电条之间形成纳米间隙。

3. 发明授权

US06887792B2 Embossed mask lithography 有权
标题翻译：压花掩模光刻
公开(公告)号：US06887792B2
公开(公告)日：2005-05-03
申请号：US10244862
申请日：2002-09-17
申请人： Craig Perlov , Carl Taussig , Ping Mei
发明人： Craig Perlov , Carl Taussig , Ping Mei
IPC分类号： H01L21/3065 , H01L23/50 , H05K1/00 , H05K3/00 , H05K3/06 , H05K3/20 , H01L21/311
CPC分类号： H05K3/20 , H05K1/0289 , H05K3/0041 , H05K3/061 , H05K2203/0108 , H05K2203/1476 , Y10S438/942
摘要： Disclosed are layered groupings and methods for constructing digital circuitry, such as memory known as Permanent Inexpensive Rugged Memory (PIRM) cross point arrays which can be produced on flexible substrates by patterning and curing through the use of a transparent embossing tool.
摘要翻译：公开了用于构建数字电路的分层分组和方法，例如称为永久性廉价坚固存储器（PIRM）交叉点阵列的存储器，其可以通过使用透明压花工具图案化和固化而在柔性基板上制造。

4. 发明授权

US06864576B2 Large line conductive pads for interconnection of stackable circuitry 有权
标题翻译：用于可堆叠电路互连的大导线焊盘
公开(公告)号：US06864576B2
公开(公告)日：2005-03-08
申请号：US10696992
申请日：2003-10-30
申请人： Craig Perlov , Carl Taussig
发明人： Craig Perlov , Carl Taussig
IPC分类号： G06K19/077 , H01L21/027 , H01L23/12 , H05K1/11 , H05K3/00 , H05K3/06 , H05K3/20 , H01L23/48
CPC分类号： H05K1/11 , H05K3/0041 , H05K3/061 , H05K3/20 , H05K2201/09681 , H05K2203/0108
摘要： Digital circuitry, such as interconnective pads which are patterned as waffles according to the embossing methods for flexible substrates which are disclosed, so as to be especially suited for the interconnection of stacks of circuitry blocks forming digital memory known as Permanent Inexpensive, Rugged Memory (PIRM) cross point arrays.
摘要翻译：数字电路，例如根据所公开的用于柔性基板的压花方法图案化为华夫饼的互连焊盘，以便特别适用于形成数字存储器的堆叠的电路块的互连，所述数字存储器被称为永久性廉价，坚固的存储器（PIRM））交叉点数组。

5. 发明授权

US06867132B2 Large line conductive pads for interconnection of stackable circuitry 有权
公开(公告)号：US06867132B2
公开(公告)日：2005-03-15
申请号：US10245897
申请日：2002-09-17
申请人： Craig Perlov , Carl Taussig
发明人： Craig Perlov , Carl Taussig
IPC分类号： G06K19/077 , H01L21/027 , H01L23/12 , H05K1/11 , H05K3/00 , H05K3/06 , H05K3/20 , H01L21/44
CPC分类号： H05K1/11 , H05K3/0041 , H05K3/061 , H05K3/20 , H05K2201/09681 , H05K2203/0108
摘要： Digital circuitry, such as interconnective pads which are patterned as waffles according to the embossing methods for flexible substrates which are disclosed, so as to be especially suited for the interconnection of stacks of circuitry blocks forming digital memory known as Permanent Inexpensive, Rugged Memory (PIRM) cross point arrays.

6. 发明申请

US20060028895A1 Silver island anti-fuse 审中-公开
标题翻译：银岛反熔丝
公开(公告)号：US20060028895A1
公开(公告)日：2006-02-09
申请号：US10914255
申请日：2004-08-09
申请人： Carl Taussig , Warren Jackson , Craig Perlov , Frank Jeffrey
发明人： Carl Taussig , Warren Jackson , Craig Perlov , Frank Jeffrey
IPC分类号： G11C17/18 , G11C11/36
CPC分类号： H01L23/5252 , G11C13/02 , G11C17/16 , G11C17/18 , G11C2213/72 , H01L27/101 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： An silver island anti-fuse including a first electrical conductor, an electrically resistive material in contact with the first conductor and at least one silver island disposed opposite the first electrical conductor and upon the electrically resistive material. A second electrical conductor disposed over the silver island intimately couples the silver island to the electrically resistive material. When a critical potential is applied across the anti-fuse, a metallic filament precipitates from the silver island through the electrically resistive material layer, establishing a short and thus switching the silver island anti-fuse from a high resistance to a low resistance. A method of making the silver island anti-fuse and a memory device incorporating the silver island anti-fuse are further provided.
摘要翻译：一种银岛反熔丝，包括第一电导体，与第一导体接触的电阻材料和与第一电导体相对设置的至少一个银岛和电阻材料。布置在银岛上的第二电导体将银岛紧密地耦合到电阻材料上。当跨抗反熔丝施加临界电位时，金属细丝通过电阻材料层从银岛沉淀出来，建立短路，从而将银岛抗熔丝从高电阻切换到低电阻。还提供了制造银岛反熔丝的方法和结合有银岛反熔丝的存储装置。

7. 发明授权

US06646912B2 Non-volatile memory 失效
标题翻译：非易失性存储器
公开(公告)号：US06646912B2
公开(公告)日：2003-11-11
申请号：US09875356
申请日：2001-06-05
申请人： Terril N. Hurst , Craig Perlov , Carol Wilson , Carl Taussig
发明人： Terril N. Hurst , Craig Perlov , Carol Wilson , Carl Taussig
IPC分类号： G11C1136
CPC分类号： G11C17/16 , G11C8/10
摘要： A data storage device is disclosed that comprises a cross-point memory array formed on a dielectric substrate material. The cross-point memory array comprises first and second sets of transverse electrodes separated by a storage layer including at least one semiconductor layer. The storage layer forms a non-volatile memory element at each crossing point of electrodes from the first and second sets. Each memory element can be switched between low and high impedance states, representing respective binary data states, by application of a write signal in the form of a predetermined current density through the memory element. Each memory element includes a diode junction formed in the storage layer, at least whilst in the low impedance state. A plurality of the data storage devices can be stacked and laminated into a memory module providing inexpensive high capacity data storage. Such a memory module can be employed in an archival data storage system in which the memory module provides a write-once data storage unit receivable in an appliance or interface card.
摘要翻译：公开了一种数据存储装置，其包括形成在电介质基板材料上的交叉点存储器阵列。交叉点存储器阵列包括由包括至少一个半导体层的存储层分开的第一组和第二组横向电极。存储层在与第一和第二组的电极的每个交叉点处形成非易失性存储元件。通过以预定电流密度的形式通过存储元件施加写入信号，每个存储元件可以在表示相应的二进制数据状态的低阻抗状态和高阻抗状态之间切换。每个存储元件至少在处于低阻抗状态时包括在存储层中形成的二极管结。可以将多个数据存储装置堆叠并层叠到提供便宜的高容量数据存储的存储器模块中。这样的存储器模块可以用于档案数据存储系统，其中存储器模块提供可接收在设备或接口卡中的一次写入数据存储单元。

8. 发明申请

US20070117278A1 Formation of devices on a substrate 有权
标题翻译：在基板上形成器件
公开(公告)号：US20070117278A1
公开(公告)日：2007-05-24
申请号：US11285879
申请日：2005-11-23
申请人： Craig Perlov , Ping Mei
发明人： Craig Perlov , Ping Mei
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L29/7869 , H01L29/66969
摘要： A method of forming a thin film device on a flexible substrate is disclosed. The method includes depositing an imprintable material over the flexible substrate. The imprintable are stamped material forming a three-dimensional pattern in the imprintable material. A sacrificial layer is formed over the three-dimensional pattern. A conductive layer is deposited over the sacrificial layer. The sacrificial layer is removed, leaving portions of the conductive layer as defined by the three-dimensional pattern.
摘要翻译：公开了一种在柔性基板上形成薄膜器件的方法。该方法包括将可压印材料沉积在柔性基底上。可压印的是在可压印材料中形成三维图案的冲压材料。在三维图案上形成牺牲层。在牺牲层上沉积导电层。去除牺牲层，使得由三维图案限定的部分导电层。

9. 发明申请

US20050157557A1 Fabrication and assembly structures and methods for memory devices 有权
标题翻译：存储器件的制造和组装结构和方法
公开(公告)号：US20050157557A1
公开(公告)日：2005-07-21
申请号：US11080284
申请日：2005-03-14
申请人： Craig Perlov , Christopher Schantz
发明人： Craig Perlov , Christopher Schantz
IPC分类号： H01L25/18 , G11C17/16 , H01L25/00 , H01L25/065 , H01L25/07 , H01L27/10 , H01L27/102 , G11C11/34
CPC分类号： H01L27/1021 , G11C17/16 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides for a common substrate with multiple sections, each constituting a separate layer of a memory device. Fold lines are arranged on the substrate to define separate sections and to provide a means for folding the sections on each other to form a multiple-layer memory device. In one application, a substrate has a fold line formed by alterations to the substrate material to form a fold line on the substrate. A first conductor section is formed with an array of parallel conductors or wires spaced across the section. A second section on the common substrate has an array of parallel conductors or wires spaced across the second section, the conductors being perpendicular to the conductors on the first section. The first and second sections are folded along the fold line over on top of each other, after a semiconductor layer has been deposited on one or both of the conductor layers, thereby forming a matrix of memory cells. The fold line is formed by removal of some of the material, such as by perforations or depressions, by deforming the material, such as by creasing, or by altering a property of the material, such as by changing the strength or flexibility of the substrate material. The conductors or the first section may also be fabricated with narrowing cross-section areas at points where fuses are to be set to an open circuit.
摘要翻译：本发明提供具有多个部分的公共基板，每个部分构成存储器件的单独层。折叠线布置在基板上以限定单独的部分并且提供用于折叠彼此的部分以形成多层存储器件的装置。在一个应用中，衬底具有通过改变衬底材料形成折叠线，以在衬底上形成折线。第一导体部分形成有跨过该部分间隔开的平行导体或导线阵列。公共衬底上的第二部分具有跨越第二部分间隔开的平行导体或导线阵列，导体垂直于第一部分上的导体。在半导体层已经沉积在一个或两个导体层上之后，第一和第二部分沿着折叠线折叠在彼此的顶部上，从而形成存储器单元的矩阵。通过例如通过使材料变形（例如通过压痕）或通过改变材料的性质例如通过改变基材的强度或柔性来去除一些材料，例如通过穿孔或凹陷来形成折线材料。导体或第一部分也可以在将熔断器设置到开路的点处制造成具有变窄的横截面积。

10. 发明申请

US20050006640A1 Polymer-based memory element 审中-公开
标题翻译：基于聚合物的记忆元件
公开(公告)号：US20050006640A1
公开(公告)日：2005-01-13
申请号：US10608791
申请日：2003-06-26
申请人： Warren Jackson , Sean Zhang , Craig Perlov
发明人： Warren Jackson , Sean Zhang , Craig Perlov
IPC分类号： G11C13/02 , H01L27/28 , H01L51/00 , H01L51/30 , H01L47/00
CPC分类号： G11C13/0016 , B82Y10/00 , G11C13/0014 , H01L27/28 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0037 , H01L51/0038 , H01L51/0041
摘要： Fuse-type and antifuse-type semiconducting-organic-polymer-film-based memory elements for use in memory devices are disclosed. Various embodiments of the present invention employ a number of different techniques to alter the electrical conductance or, equivalently, the resistance, of organic-polymer-film memory elements in order to produce detectable memory-state changes in the memory elements. The techniques involve altering the electronic properties of the organic polymers by application of heat or electric fields, often in combination with additional chemical compounds, to either increase or decrease the resistance of the organic polymers.
摘要翻译：公开了用于存储器件的保险丝型和反熔丝型半导体 - 有机聚合物膜基存储元件。本发明的各种实施例使用多种不同的技术来改变有机 - 聚合物膜存储元件的电导率或等效的电阻，以便产生存储元件中的可检测的存储状态变化。这些技术涉及通过施加热或电场（通常与其它化合物组合）来改变有机聚合物的电子性质来提高或降低有机聚合物的电阻。

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