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1. 发明申请

US20070040491A1 Thin film devices and methods for forming the same 有权
标题翻译：薄膜器件及其形成方法
公开(公告)号：US20070040491A1
公开(公告)日：2007-02-22
申请号：US11589580
申请日：2006-10-30
申请人： Ping Mei , Craig Perlov , Albert Jeans , Carl Taussig
发明人： Ping Mei , Craig Perlov , Albert Jeans , Carl Taussig
IPC分类号： H01J1/62
CPC分类号： H01L29/42384 , H01L29/6675 , H01L29/78645 , H01L29/7869
摘要： Thin film devices and methods for forming the same are disclosed herein. A method for forming a thin film device includes forming a first at least semi-conductive strip located at a first height relative to a surface of a substrate, and forming a second at least semi-conductive strip adjacent to the first at least semi-conductive strip. The second strip is located at a second height relative to the substrate surface, and the second height is different than the first height. A nano-gap is formed between the first and second at least semi-conductive strips.
摘要翻译：本文公开了薄膜器件及其形成方法。一种用于形成薄膜器件的方法包括形成位于相对于衬底表面的第一高度处的第一至少半导电条，以及形成与第一至少半导体相邻的第二至少半导电条跳闸。第二条带相对于基板表面位于第二高度，第二高度不同于第一高度。在第一和第二至少半导电条之间形成纳米间隙。

2. 发明申请

US20060275963A1 Structure and method for thin film device 有权
标题翻译：薄膜器件的结构和方法
公开(公告)号：US20060275963A1
公开(公告)日：2006-12-07
申请号：US11144204
申请日：2005-06-02
申请人： Ping Mei , Albert Jeans , Carl Taussig
发明人： Ping Mei , Albert Jeans , Carl Taussig
IPC分类号： H01L21/84 , H01L27/148
CPC分类号： H01L29/42384 , H01L29/6675 , H01L29/78645 , H01L29/7869 , Y10S438/942
摘要： Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel spaced electrically conductive strips. A plurality of thin film device layers are then deposited upon the conductive strips. A 3D structure is provided upon the plurality of thin film device layers, the structure having a plurality of different heights. The 3D structure and the plurality of thin film device layers are then etched to define a thin film device, such as for example a thin film transistor that is disposed above at least a portion of the conductive strips.
摘要翻译：本发明提供一种制造薄膜器件的薄膜器件和相关方法。例如，在栅电极中具有纳米间隙的薄膜晶体管。该方法包括提供基底。然后在衬底上设置多个平行隔开的导电条。然后将多个薄膜器件层沉积在导电条上。 3D结构设置在多个薄膜器件层上，该结构具有多个不同的高度。然后蚀刻3D结构和多个薄膜器件层以限定薄膜器件，例如设置在至少一部分导电条上的薄膜晶体管。

3. 发明授权

US07304364B2 Embossed mask lithography 有权
标题翻译：压花掩模光刻
公开(公告)号：US07304364B2
公开(公告)日：2007-12-04
申请号：US10885842
申请日：2004-07-06
申请人： Craig Perlov , Carl Taussig , Ping Mei
发明人： Craig Perlov , Carl Taussig , Ping Mei
IPC分类号： H01L29/00 , G11C11/34
CPC分类号： H05K3/20 , H05K1/0289 , H05K3/0041 , H05K3/061 , H05K2203/0108 , H05K2203/1476 , Y10S438/942
摘要： Disclosed are layered groupings and methods for constructing digital circuitry, such as memory known as Permanent Inexpensive Rugged Memory (PIRM) cross point arrays which can be produced on flexible substrates by patterning and curing through the use of a transparent embossing tool.
摘要翻译：公开了用于构建数字电路的分层分组和方法，例如称为永久性廉价坚固存储器（PIRM）交叉点阵列的存储器，其可以通过使用透明压花工具图案化和固化而在柔性基板上制造。

4. 发明申请

US20080185591A1 Structure and method for thin film device 有权
公开(公告)号：US20080185591A1
公开(公告)日：2008-08-07
申请号：US12011440
申请日：2008-01-24
申请人： Ping Mei , Albert Jeans , Carl Taussig
发明人： Ping Mei , Albert Jeans , Carl Taussig
IPC分类号： H01L29/04
CPC分类号： H01L29/42384 , H01L29/6675 , H01L29/78645 , H01L29/7869 , Y10S438/942
摘要： Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel spaced electrically conductive strips. A plurality of thin film device layers are then deposited upon the conductive strips. A 3D structure is provided upon the plurality of thin film device layers, the structure having a plurality of different heights. The 3D structure and the plurality of thin film device layers are then etched to define a thin film device, such as for example a thin film transistor that is disposed above at least a portion of the conductive strips.

5. 发明授权

US06887792B2 Embossed mask lithography 有权
标题翻译：压花掩模光刻
公开(公告)号：US06887792B2
公开(公告)日：2005-05-03
申请号：US10244862
申请日：2002-09-17
申请人： Craig Perlov , Carl Taussig , Ping Mei
发明人： Craig Perlov , Carl Taussig , Ping Mei
IPC分类号： H01L21/3065 , H01L23/50 , H05K1/00 , H05K3/00 , H05K3/06 , H05K3/20 , H01L21/311
CPC分类号： H05K3/20 , H05K1/0289 , H05K3/0041 , H05K3/061 , H05K2203/0108 , H05K2203/1476 , Y10S438/942
摘要： Disclosed are layered groupings and methods for constructing digital circuitry, such as memory known as Permanent Inexpensive Rugged Memory (PIRM) cross point arrays which can be produced on flexible substrates by patterning and curing through the use of a transparent embossing tool.
摘要翻译：公开了用于构建数字电路的分层分组和方法，例如称为永久性廉价坚固存储器（PIRM）交叉点阵列的存储器，其可以通过使用透明压花工具图案化和固化而在柔性基板上制造。

6. 发明授权

US08269221B2 Structure and method for thin film device 有权
标题翻译：薄膜器件的结构和方法
公开(公告)号：US08269221B2
公开(公告)日：2012-09-18
申请号：US12011440
申请日：2008-01-24
申请人： Ping Mei , Albert Jeans , Carl Taussig
发明人： Ping Mei , Albert Jeans , Carl Taussig
IPC分类号： H01L29/786
CPC分类号： H01L29/42384 , H01L29/6675 , H01L29/78645 , H01L29/7869 , Y10S438/942
摘要： Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel spaced electrically conductive strips. A plurality of thin film device layers are then deposited upon the conductive strips. A 3D structure is provided upon the plurality of thin film device layers, the structure having a plurality of different heights. The 3D structure and the plurality of thin film device layers are then etched to define a thin film device, such as for example a thin film transistor that is disposed above at least a portion of the conductive strips.
摘要翻译：本发明提供一种制造薄膜器件的薄膜器件和相关方法。例如，在栅电极中具有纳米间隙的薄膜晶体管。该方法包括提供基底。然后在衬底上设置多个平行隔开的导电条。然后将多个薄膜器件层沉积在导电条上。 3D结构设置在多个薄膜器件层上，该结构具有多个不同的高度。然后蚀刻3D结构和多个薄膜器件层以限定薄膜器件，例如设置在至少一部分导电条上的薄膜晶体管。

7. 发明授权

US07341893B2 Structure and method for thin film device 有权
标题翻译：薄膜器件的结构和方法
公开(公告)号：US07341893B2
公开(公告)日：2008-03-11
申请号：US11144204
申请日：2005-06-02
申请人： Ping Mei , Albert Jeans , Carl Taussig
发明人： Ping Mei , Albert Jeans , Carl Taussig
IPC分类号： H01L21/00
CPC分类号： H01L29/42384 , H01L29/6675 , H01L29/78645 , H01L29/7869 , Y10S438/942
摘要： Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel spaced electrically conductive strips. A plurality of thin film device layers are then deposited upon the conductive strips. A 3D structure is provided upon the plurality of thin film device layers, the structure having a plurality of different heights. The 3D structure and the plurality of thin film device layers are then etched to define a thin film device, such as for example a thin film transistor that is disposed above at least a portion of the conductive strips.
摘要翻译：本发明提供一种制造薄膜器件的薄膜器件和相关方法。例如，在栅电极中具有纳米间隙的薄膜晶体管。该方法包括提供基底。然后在衬底上设置多个平行隔开的导电条。然后将多个薄膜器件层沉积在导电条上。 3D结构设置在多个薄膜器件层上，该结构具有多个不同的高度。然后蚀刻3D结构和多个薄膜器件层以限定薄膜器件，例如设置在至少一部分导电条上的薄膜晶体管。

8. 发明授权

US06864576B2 Large line conductive pads for interconnection of stackable circuitry 有权
标题翻译：用于可堆叠电路互连的大导线焊盘
公开(公告)号：US06864576B2
公开(公告)日：2005-03-08
申请号：US10696992
申请日：2003-10-30
申请人： Craig Perlov , Carl Taussig
发明人： Craig Perlov , Carl Taussig
IPC分类号： G06K19/077 , H01L21/027 , H01L23/12 , H05K1/11 , H05K3/00 , H05K3/06 , H05K3/20 , H01L23/48
CPC分类号： H05K1/11 , H05K3/0041 , H05K3/061 , H05K3/20 , H05K2201/09681 , H05K2203/0108
摘要： Digital circuitry, such as interconnective pads which are patterned as waffles according to the embossing methods for flexible substrates which are disclosed, so as to be especially suited for the interconnection of stacks of circuitry blocks forming digital memory known as Permanent Inexpensive, Rugged Memory (PIRM) cross point arrays.
摘要翻译：数字电路，例如根据所公开的用于柔性基板的压花方法图案化为华夫饼的互连焊盘，以便特别适用于形成数字存储器的堆叠的电路块的互连，所述数字存储器被称为永久性廉价，坚固的存储器（PIRM））交叉点数组。

9. 发明申请

US20050176182A1 Forming a plurality of thin-film devices 有权
标题翻译：形成多个薄膜器件
公开(公告)号：US20050176182A1
公开(公告)日：2005-08-11
申请号：US10777005
申请日：2004-02-10
申请人： Ping Me , Warren Jackson , Carl Taussig , Albert Jeans
发明人： Ping Me , Warren Jackson , Carl Taussig , Albert Jeans
IPC分类号： G03F7/20 , C23C16/00 , H01L21/00 , H01L21/027 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L51/00
CPC分类号： H01L29/78603 , H01L27/12 , H01L27/1292 , H01L29/66757 , H01L51/0097
摘要： An aspect of the present invention is a method for forming a plurality of thin-film devices. The method includes providing a flexible substrate and utilizing a self-aligned imprint lithography (SAIL) process to form the plurality of thin-film devices on the flexible substrate.
摘要翻译：本发明的一个方面是形成多个薄膜器件的方法。该方法包括提供柔性基板并利用自对准压印光刻（SAIL）工艺在柔性基板上形成多个薄膜器件。

10. 发明授权

US06867132B2 Large line conductive pads for interconnection of stackable circuitry 有权
公开(公告)号：US06867132B2
公开(公告)日：2005-03-15
申请号：US10245897
申请日：2002-09-17
申请人： Craig Perlov , Carl Taussig
发明人： Craig Perlov , Carl Taussig
IPC分类号： G06K19/077 , H01L21/027 , H01L23/12 , H05K1/11 , H05K3/00 , H05K3/06 , H05K3/20 , H01L21/44
CPC分类号： H05K1/11 , H05K3/0041 , H05K3/061 , H05K3/20 , H05K2201/09681 , H05K2203/0108
摘要： Digital circuitry, such as interconnective pads which are patterned as waffles according to the embossing methods for flexible substrates which are disclosed, so as to be especially suited for the interconnection of stacks of circuitry blocks forming digital memory known as Permanent Inexpensive, Rugged Memory (PIRM) cross point arrays.

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