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    • 1. 发明申请
    • Thin film transistor memory device
    • 薄膜晶体管存储器件
    • US20050157547A1
    • 2005-07-21
    • US10985762
    • 2004-11-09
    • Ping MeiJames Easton
    • Ping MeiJames Easton
    • G11C16/04G11C5/06G11C16/02G11C17/16H01L21/8247H01L27/115H01L29/788H01L29/792G11C16/06
    • G11C17/16
    • A memory device includes a memory array of thin film transistor (TFT) memory cells. The memory cells include a floating gate separated from a gate electrode portion of a gate line by an insulator. The gate electrode portion includes a diffusive conductor that diffuses through the insulator under the application of a write voltage. The diffusive conductor forms a conductive path through the insulator that couples the gate line to the floating gate, changing the gate capacitance and therefore the state of the memory cell. The states of the memory cells are detectable as the differing current values for the memory cells. The memory cells are three terminal devices, and read currents do not pass through the conductive paths in the memory cells during read operations. This renders the memory cells robust, because read currents will not interfere with the storage mechanism in the memory cells. The memory array can be fabricated using multiple steps using the same mask. The use of a single mask for multiple steps reduces the time and cost involved in fabricating the memory array.
    • 存储器件包括薄膜晶体管(TFT)存储单元的存储器阵列。 存储单元包括通过绝缘体与栅极线的栅极部分分离的浮动栅极。 栅电极部分包括在施加写入电压下扩散通过绝缘体的漫射导体。 扩散导体形成通过绝缘体的导电路径,其将栅极线耦合到浮动栅极,改变栅极电容并因此改变存储器单元的状态。 存储器单元的状态可被检测为存储器单元的不同电流值。 存储单元是三个终端设备,并且读取电流在读取操作期间不通过存储器单元中的导电路径。 这使得存储器单元牢固,因为读取电流将不会干扰存储器单元中的存储机制。 可以使用相同的掩模使用多个步骤来制造存储器阵列。 对于多个步骤使用单个掩模减少了制造存储器阵列所涉及的时间和成本。
    • 3. 发明授权
    • Method of forming a pressure switch thin film device
    • 形成压力开关薄膜装置的方法
    • US07795062B2
    • 2010-09-14
    • US11696079
    • 2007-04-03
    • Carl P. TaussigPing MeiHao LuoWarren Jackson
    • Carl P. TaussigPing MeiHao LuoWarren Jackson
    • H01L21/00
    • H01L27/14683G06K9/0002H01L27/14678H01L29/84
    • This invention provides a method of forming at least one pressure switch thin film device. The method includes providing a substrate and depositing a plurality of thin film device layers as a stack upon the substrate. An imprinted 3D template structure is provided upon the plurality of thin film device layers. The plurality of thin film device layers and the 3D template structure are then etched and at least one thin film device layer is undercut to provide a plurality of aligned electrical contact pairs and adjacent spacer posts. A flexible membrane providing a plurality of separate electrical contacts is deposited upon the spacer posts, the separate electrical contacts overlapping the contact pairs. The spacer posts provide a gap between the electrical contacts and the contact pairs.
    • 本发明提供一种形成至少一个压力开关薄膜器件的方法。 该方法包括提供衬底并将多个薄膜器件层作为堆叠沉积在衬底上。 在多个薄膜器件层上提供印模的3D模板结构。 然后蚀刻多个薄膜器件层和3D模板结构,并且至少一个薄膜器件层被切削以提供多个对准的电接触对和相邻的间隔柱。 提供多个单独的电触点的柔性膜沉积在间隔柱上,分开的电触点与触点对重叠。 间隔柱在电触点和触点对之间提供间隙。