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51. 发明授权

US07772554B2 Charged particle system 有权
标题翻译：带电粒子系统
公开(公告)号：US07772554B2
公开(公告)日：2010-08-10
申请号：US12098127
申请日：2008-04-04
申请人： Akiyuki Sugiyama , Hidetoshi Morokuma , Yutaka Hojo , Yukio Yoshizawa
发明人： Akiyuki Sugiyama , Hidetoshi Morokuma , Yutaka Hojo , Yukio Yoshizawa
IPC分类号： G01N23/00
CPC分类号： H01J37/3056 , B82Y10/00 , B82Y40/00 , H01J37/265 , H01J37/28 , H01J37/3045 , H01J37/3174 , H01J2237/22 , H01J2237/2817 , H01J2237/31745
摘要： To provide a charged particle system capable of facilitating comparison between an actual pattern and an ideal pattern using not only two-dimensional CAD data but also three-dimensional CAD data. According to the present invention, using information about the angle of irradiation of a sample with a charged particle beam, a two-dimensional display of an ideal pattern (design data, such as CAD data, for example) is converted into a three-dimensional display, and the three-dimensional ideal pattern is displayed with an observation image. If the three-dimensional ideal pattern is superimposed on the observation image, comparison thereof can be easily carried out. Examples of the ideal pattern include a circuit pattern (CAD data) based on semiconductor design information, an exposure mask pattern based on an exposure mask used for exposure of a semiconductor wafer, and an exposure simulation pattern based on exposure simulation based on the exposure mask and an exposure condition can be used, and at least one of these patterns is displayed three-dimensionally.
摘要翻译：为了提供一种带电粒子系统，其能够利用不仅二维CAD数据而且还可以利用三维CAD数据来实现实际图案与理想图案之间的比较。根据本发明，使用带有带电粒子束的样本的照射角度的信息，将理想图案（例如，CAD数据等设计数据）的二维显示转换成三维显示，并且用观察图像显示三维理想图案。如果将三维理想图案叠加在观察图像上，则可以容易地进行比较。理想图案的实例包括基于半导体设计信息的电路图案（CAD数据），基于用于半导体晶片曝光的曝光掩模的曝光掩模图案和基于曝光掩模的曝光模拟的曝光模拟图案并且可以使用曝光条件，并且这些图案中的至少一个被三维地显示。

52. 发明申请

US20100181478A1 CHARGED PARTICLE BEAM ADJUSTING METHOD AND CHARGED PARTICLE BEAM APPARATUS 审中-公开
标题翻译：充电颗粒光束调节方法和充电颗粒光束装置
公开(公告)号：US20100181478A1
公开(公告)日：2010-07-22
申请号：US12749271
申请日：2010-03-29
申请人： Hidetoshi Morokuma , Noriaki Arai , Takashi Doi , Fumihiro Sasajima , Yoshihiro Kimura
发明人： Hidetoshi Morokuma , Noriaki Arai , Takashi Doi , Fumihiro Sasajima , Yoshihiro Kimura
IPC分类号： H01J37/28 , H01J37/10 , H01J37/147
CPC分类号： H01J37/21 , H01J37/153 , H01J2237/216 , H01J2237/221
摘要： In an apparatus for obtaining an image by irradiating a charged particle beam on a specimen, a condition of the beam conditioned differently from vertical incidence as in the case of the beam being tilted is required to be adjusted. To this end, the apparatus has a controller for automatically controlling a stigmator, an objective lens and a deflector such that astigmatism is corrected, focus is adjusted and view filed shift is corrected. The controller has a selector for inhibiting at least one of the astigmatism correction, focus adjustment and FOV shift correction from being executed.
摘要翻译：在用于通过将带电粒子束照射在样本上来获得图像的装置中，需要调整如在光束倾斜的情况下不同于垂直入射而调节的光束的条件。为此，该装置具有用于自动控制瞄光器，物镜和偏转器的控制器，从而校正像散，调整焦点并校正视野移动。控制器具有用于禁止执行散光校正，聚焦调整和FOV偏移校正中的至少一个的选择器。

53. 发明申请

US20100138801A1 System and Method for Detecting a Defect 审中-公开
标题翻译：检测缺陷的系统和方法
公开(公告)号：US20100138801A1
公开(公告)日：2010-06-03
申请号：US12698201
申请日：2010-02-02
申请人： Ryoichi MATSUOKA , Hidetoshi Morokuma , Takumichi Sutani
发明人： Ryoichi MATSUOKA , Hidetoshi Morokuma , Takumichi Sutani
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G01R31/303
摘要： A system and a method for detecting a defect, capable of extracting a defect occurring depending on finishing accuracy required for circuit operation are provided. The system includes a timing analyzer for extracting a critical path in which a high accuracy is required for a signal transmission operation as compared with other portions based on circuit design data, a critical path extractor for comparing the circuit design data with layout design data on a pattern and for extracting graphical data including the critical path extracted by the timing analyzer, an inspection recipe creator for deciding a portion to be inspected, based on coordinate information on the graphical data including the critical path extracted by the critical path extractor, and an SEM defect review apparatus for acquiring an image of the decided portion to be inspected on a wafer according to an inspection recipe created by the inspection recipe creator.
摘要翻译：提供一种用于检测缺陷的系统和方法，其能够提取根据电路操作所需的精加工精度而发生的缺陷。该系统包括用于提取与其他部分相比基于电路设计数据而与信号传输操作相比需要高精度的关键路径的定时分析器，用于将电路设计数据与布局设计数据进行比较的关键路径提取器基于关于包括由关键路径提取器提取的关键路径的图形数据的坐标信息，以及扫描电子显微镜（SEM）来提取包括由定时分析器提取的关键路径的图形数据，用于决定待检查部分的检查配方生成器缺陷检查装置，用于根据由检查配方创建者创建的检查配方在晶片上获取所确定的待检查部分的图像。

54. 发明授权

US07679055B2 Pattern displacement measuring method and pattern measuring device 有权
标题翻译：图案位移测量方法和图案测量装置
公开(公告)号：US07679055B2
公开(公告)日：2010-03-16
申请号：US11892675
申请日：2007-08-24
申请人： Takumichi Sutani , Ryoichi Matsuoka , Hidetoshi Morokuma , Akiyuki Sugiyama , Hiroyuki Shindo
发明人： Takumichi Sutani , Ryoichi Matsuoka , Hidetoshi Morokuma , Akiyuki Sugiyama , Hiroyuki Shindo
IPC分类号： G06K9/48 , G06K9/00
CPC分类号： G06T7/001 , G06T7/33 , G06T2207/10056 , G06T2207/30148
摘要： An evaluation method and apparatus is provided for evaluating a displacement between patterns of a pattern image by using design data representative of a plurality of patterns superimposed ideally. A first distance is measured for an upper layer pattern between a line segment of the design data and an edge of the charged particle radiation image, a second distance is measured for a lower layer pattern between a line segment of the design data and an edge of the charged particle radiation image; and an superimposition displacement is detected between the upper layer pattern and lower layer pattern in accordance with the first distance and second distance.
摘要翻译：提供了一种评估方法和装置，用于通过使用表示叠加的多个图案的设计数据来理想地评估图案图案的图案之间的位移。对于设计数据的线段和带电粒子辐射图像的边缘之间的上层图案测量第一距离，测量设计数据的线段与设计数据的边缘之间的较低层图案的第二距离带电粒子辐射图像; 并且根据第一距离和第二距离在上层图案和下层图案之间检测叠加位移。

55. 发明授权

US07439505B2 Scanning electron microscope 有权
标题翻译：扫描电子显微镜
公开(公告)号：US07439505B2
公开(公告)日：2008-10-21
申请号：US11292002
申请日：2005-12-02
申请人： Satoru Yamaguchi , Takashi Iizumi , Osamu Komuro , Hidetoshi Morokuma , Tatsuya Maeda , Juntaro Arima , Yasuhiko Ozawa
发明人： Satoru Yamaguchi , Takashi Iizumi , Osamu Komuro , Hidetoshi Morokuma , Tatsuya Maeda , Juntaro Arima , Yasuhiko Ozawa
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , G01N23/04 , G01N23/225 , G06T7/74 , G06T2207/10056 , G06T2207/30148 , H01J37/222 , H01J2237/2817
摘要： An object of the present invention is to provide a scanning electron microscope for reducing a process concerning inspection positioning or an input operation, thereby functioning with high precision at high speed. To accomplish the above object, the present invention provides a scanning electron microscope having a function for identifying a desired position on the basis of a pattern registered beforehand, which includes a means for setting information concerning the pattern kind, the interval between a plurality of parts constituting the pattern, and the size of parts constituting the pattern and a means for forming a pattern image composed of a plurality of parts on the basis of the information obtained by the concerned means.
摘要翻译：本发明的目的是提供一种用于减少与检查定位或输入操作相关的处理的扫描电子显微镜，从而以高速度高精度地运行。为了实现上述目的，本发明提供了一种扫描电子显微镜，其具有基于预先登记的图案来识别期望位置的功能，该扫描电子显微镜包括用于设置关于图案种类的信息的装置，多个部分之间的间隔构成图案的部分，以及构成图案的部分的尺寸，以及基于由相关装置获得的信息形成由多个部分组成的图案图像的装置。

56. 发明申请

US20070120078A1 Method of measuring pattern dimension and method of controlling semiconductor device process 有权
标题翻译：测量图案尺寸的方法和半导体器件工艺的控制方法
公开(公告)号：US20070120078A1
公开(公告)日：2007-05-31
申请号：US11657689
申请日：2007-01-25
申请人： Maki Tanaka , Hidetoshi Morokuma , Chie Shishido , Yuji Takagi
发明人： Maki Tanaka , Hidetoshi Morokuma , Chie Shishido , Yuji Takagi
IPC分类号： G01N21/86 , G01V8/00
CPC分类号： H01J37/28 , H01J37/304 , H01J2237/2814 , H01J2237/2817 , H01J2237/30455
摘要： A method of measuring pattern dimensions includes evaluating a relationship between cross-sectional shapes of a pattern and measurement errors of a pattern in a specified image processing technique, and conducting an actual measurement in which dimension measurement of an evaluation objective pattern from image signals of a microscope is carried out, and revising errors of the dimension measurement of the evaluation objective pattern based on the relationship between the cross-sectional shapes of a pattern and the measurement errors of a pattern previously evaluated.
摘要翻译：测量图案尺寸的方法包括评估图案的横截面形状与特定图像处理技术中的图案的测量误差之间的关系，并且进行实际测量，其中评估对象图案的尺寸测量从图像信号基于图案的截面形状与先前评估的图案的测量误差之间的关系，进行显微镜的修正，并修正评价对象图案的尺寸测量的误差。

57. 发明申请

US20070114398A1 Method and apparatus for observing a specimen 有权
标题翻译：用于观察试样的方法和装置
公开(公告)号：US20070114398A1
公开(公告)日：2007-05-24
申请号：US11651031
申请日：2007-01-09
申请人： Atsushi Miyamoto , Maki Tanaka , Hidetoshi Morokuma
发明人： Atsushi Miyamoto , Maki Tanaka , Hidetoshi Morokuma
IPC分类号： G01N23/00
CPC分类号： H01J37/28 , G01B15/04 , G01N23/2251 , H01J2237/226 , H01J2237/2814
摘要： A method and device for observing a specimen in which an electron beam is irradiated and scanned from an oblique direction, onto a surface of a calibration substrate on which a pattern with a known shape is formed, and an SEM image of the surface of the calibration substrate is obtained. An angle in an oblique direction of the electron beam irradiated is obtained and is adjusted to a desired angle. The electron beam is irradiated from the adjusted desired angle in the oblique direction, onto a specimen substrate on which a pattern is formed, and an SEM image of the specimen substrate is obtained. The SEM image of the specimen substrate is processed by use of the information of the desired angle, and a 3D image of the pattern on the specimen substrate or a shape of a cross section of the pattern is obtained.
摘要翻译：一种用于观察其中电子束从倾斜方向照射和扫描的样本到其上形成有已知形状的图案的校准基板的表面上的方法和装置以及校准表面的SEM图像得到底物。获得照射的电子束的倾斜方向的角度并将其调节到期望的角度。将电子束从倾斜方向的调整好的所需角度照射到形成图案的试样基板上，得到试样基板的SEM图像。通过使用期望角度的信息来处理样本基板的SEM图像，并且获得样本基板上的图案的3D图像或图案的横截面的形状。

58. 发明授权

US07217925B2 Scanning electron microscope 有权
标题翻译：扫描电子显微镜
公开(公告)号：US07217925B2
公开(公告)日：2007-05-15
申请号：US11314312
申请日：2005-12-22
申请人： Yoshinori Nakada , Shunsuke Koshihara , Ryuichirou Tamochi , Yayoi Hosoya , Hidetoshi Morokuma
发明人： Yoshinori Nakada , Shunsuke Koshihara , Ryuichirou Tamochi , Yayoi Hosoya , Hidetoshi Morokuma
IPC分类号： H01J37/26
CPC分类号： H01J37/28 , H01J37/265 , H01J2237/221 , H01J2237/2487 , H01J2237/2817 , H01J2237/282 , H01J2237/2826
摘要： In order to provide a full-automatic scanning electron microscope which carries out investigation jobs full-automatically from fine adjustment to reviewing, the scanning electron microscope of the present invention has a function of calculating the accuracy of correction after correction of coordinates and displaying it with vectors 39, a function of automatically determining a searching magnification for automatic object detection from the obtained information after correction of coordinates, and a function of calculating the frequency of occurrence of objects or defects and a time required for measurement from the searching magnification and conditions of measurement.
摘要翻译：为了提供一种全自动扫描电子显微镜，其从精细调整到全面自动执行调查工作，本发明的扫描电子显微镜具有在校正坐标之后计算校正精度的功能，并且用向量39，根据坐标校正后的获取信息自动确定自动对象检测的搜索倍率的功能，以及根据搜索倍率和条件来计算物体或缺陷的发生频率以及测量所需的时间的功能测量。

59. 发明申请

US20070024528A1 IMAGE FORMING METHOD AND CHARGED PARTICLE BEAM APPARATUS 有权
标题翻译：图像形成方法和充电颗粒光束装置
公开(公告)号：US20070024528A1
公开(公告)日：2007-02-01
申请号：US11298590
申请日：2005-12-12
申请人： Atsushi Kobaru , Hidetoshi Morokuma , Hiroki Kawada , Sho Takami , Katsuhiro Sasada , Kouichi Yamamoto , Norio Satou , Kunio Nakanishi
发明人： Atsushi Kobaru , Hidetoshi Morokuma , Hiroki Kawada , Sho Takami , Katsuhiro Sasada , Kouichi Yamamoto , Norio Satou , Kunio Nakanishi
IPC分类号： G09G3/00
CPC分类号： H01J37/265 , H01J37/28 , H01J2237/1536 , H01J2237/31749
摘要： An image forming method and a charged particle beam apparatus suitable for suppressing the inclination of charging when scanning a two-dimensional area with a charged particle beam. A third scanning line located between a first scanning line and a second scanning line is scanned. After the first, second and third scanning lines have been scanned, a plurality of scanning lines are scanned between the first and third scanning lines and between the second and third scanning lines.
摘要翻译：一种适于在用带电粒子束扫描二维区域时抑制充电倾斜的图像形成方法和带电粒子束装置。扫描位于第一扫描线和第二扫描线之间的第三扫描线。在扫描第一，第二和第三扫描线之后，在第一扫描线和第三扫描线之间以及第二和第三扫描线之间扫描多条扫描线。

60. 发明申请

US20060288325A1 Method and apparatus for measuring dimension of a pattern formed on a semiconductor wafer 有权
标题翻译：用于测量形成在半导体晶片上的图案的尺寸的方法和装置
公开(公告)号：US20060288325A1
公开(公告)日：2006-12-21
申请号：US11342694
申请日：2006-01-31
申请人： Atsushi Miyamoto , Wataru Nagatomo , Ryoichi Matsuoka , Hidetoshi Morokuma , Takumichi Sutani
发明人： Atsushi Miyamoto , Wataru Nagatomo , Ryoichi Matsuoka , Hidetoshi Morokuma , Takumichi Sutani
IPC分类号： G06F17/50
CPC分类号： G03F7/70625
摘要： In an imaging recipe creating apparatus that uses a scanning electron microscope to create an imaging recipe for SEM observation of a semiconductor pattern, in order that the imaging recipe for measuring the wiring width and other various dimension values of the pattern from an observation image and thus evaluating the shape of the pattern is automatically generated within a minimum time by the analysis using the CAD image obtained by conversion from CAD data, an CAD image creation unit that creates the CAD image by converting the CAD data into an image format includes an image-quantizing width determining section, a brightness information providing section, and a pattern shape deformation processing section; the imaging recipe being created using the CAD image created by the CAD image creation unit.
摘要翻译：在使用扫描电子显微镜创建半导体图案的SEM观察的成像配方的成像配方制作装置中，为了从观察图像测量布线宽度和图案的其他各种尺寸值的成像配方，从而通过使用通过从CAD数据转换获得的CAD图像的分析，在最小时间内自动生成图案的形状，通过将CAD数据转换为图像格式来创建CAD图像的CAD图像创建单元，量化宽度确定部分，亮度信息提供部分和图案形状变形处理部分; 使用由CAD图像创建单元创建的CAD图像来创建成像配方。

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