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51. 发明申请

US20100197104A1 PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING 有权
标题翻译：通过选择性通道形成可编程金属化记忆细胞
公开(公告)号：US20100197104A1
公开(公告)日：2010-08-05
申请号：US12761899
申请日：2010-04-16
申请人： Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
发明人： Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
IPC分类号： H01L21/02
CPC分类号： H01L45/085 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/141 , H01L45/143 , H01L45/1625 , H01L45/1633 , H01L45/1658 , H01L45/1675
摘要： Methods for making a programmable metallization memory cell are disclosed.
摘要翻译：公开了制造可编程金属化存储器单元的方法。

52. 发明申请

US20100054026A1 MEMORY WITH SEPARATE READ AND WRITE PATHS 有权
标题翻译：具有单独读取和写入数据的存储器
公开(公告)号：US20100054026A1
公开(公告)日：2010-03-04
申请号：US12198416
申请日：2008-08-26
申请人： Haiwen Xi , Hongyue Liu , Michael Xuefei Tang , Antoine Khoueir , Song S. Xue
发明人： Haiwen Xi , Hongyue Liu , Michael Xuefei Tang , Antoine Khoueir , Song S. Xue
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line and a magnetic tunnel junction data cell electrically coupled between a read bit line and a read source line. A write current passing through the giant magnetoresistance cell switches the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell. The magnetic tunnel junction data cell is read by a read current passing though the magnetic tunnel junction data cell.
摘要翻译：存储单元包括电耦合在写位线和写入源线之间的电磁耦合单元和电耦合在读取位线和读取源极线之间的磁性隧道结数据单元的巨磁电阻单元。通过巨磁电阻单元的写入电流将巨磁阻单元切换到高电阻状态和低电阻状态之间。磁隧道结数据单元被配置为通过与巨磁阻单元的静磁耦合在高电阻状态和低电阻状态之间切换。磁隧道结数据单元由通过磁性隧道结数据单元的读取电流读取。

53. 发明申请

US20100034010A1 MEMORY DEVICES WITH CONCENTRATED ELECTRICAL FIELDS 审中-公开
标题翻译：具有集中电场的存储器件
公开(公告)号：US20100034010A1
公开(公告)日：2010-02-11
申请号：US12329150
申请日：2008-12-05
申请人： Haiwen Xi , Zheng Gao , Song S. Xue
发明人： Haiwen Xi , Zheng Gao , Song S. Xue
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C13/0004 , G11C2213/31 , G11C2213/32 , G11C2213/52 , H01L27/2481 , H01L45/04 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/146 , H01L45/147
摘要： Designs of resistance memory and phase change memory devices with memory cells having metallic inclusion at least in the area of electrode/medium layer interfaces. Such metallic inclusion is used to concentrate electric fields during writing. Consequently, resistance switching for the devices primarily occurs in the area of the metallic inclusion. As a result, better control of the resistance switching can be attained, thereby optimizing performance of the memory devices.
摘要翻译：具有至少在电极/介质层界面区域中具有金属夹杂物的存储单元的电阻存储器和相变存储器件的设计。这种金属夹杂物用于在书写期间浓缩电场。因此，器件的电阻切换主要发生在金属夹杂物的区域中。结果，可以实现电阻切换的更好的控制，从而优化存储器件的性能。

54. 发明申请

US20090302953A1 MAGNETIC OSCILLATOR WITH MULTIPLE COHERENT PHASE OUTPUT 有权
标题翻译：具有多个相干相位输出的磁振荡器
公开(公告)号：US20090302953A1
公开(公告)日：2009-12-10
申请号：US12132676
申请日：2008-06-04
申请人： Haiwen Xi , Dian Song , Song S. Xue
发明人： Haiwen Xi , Dian Song , Song S. Xue
IPC分类号： H03B25/00
CPC分类号： H03B27/00 , H03B15/006
摘要： Apparatus to generate signals with multiple phases are described. The apparatus includes a fixed multilayer stack providing a varying magnetic field and at least two sensors adjacent the fixed multilayer stack to sense the varying magnetic field and generate at least two output signals. The frequency of the output signals can be tuned by an input current.
摘要翻译：描述用于产生具有多个相位的信号的装置。该装置包括提供变化的磁场的固定多层堆叠和与固定多层堆叠相邻的至少两个传感器，以感测变化的磁场并产生至少两个输出信号。可以通过输入电流调节输出信号的频率。

55. 发明申请

US20090290268A1 NONVOLATILE PROGRAMMABLE LOGIC GATES AND ADDERS 有权
标题翻译：非易失性可编程逻辑门和插件
公开(公告)号：US20090290268A1
公开(公告)日：2009-11-26
申请号：US12125975
申请日：2008-05-23
申请人： Haiwen Xi , Yang Li , Song S. Xue
发明人： Haiwen Xi , Yang Li , Song S. Xue
IPC分类号： G11B5/33
CPC分类号： H03K19/173 , G11C11/161 , G11C11/1673
摘要： Spin torque magnetic logic device having at least one input element and an output element. Current is applied through the input element(s), and the resulting resistance or voltage across the output element is measured. The input element(s) include a free layer and the output element includes a free layer that is electrically connected to the free layer of the input element. The free layers of the input element and the output element may be electrically connected via magnetostatic coupling, or may be physically coupled. In some embodiments, the output element may have more than one free layer.
摘要翻译：具有至少一个输入元件和输出元件的自旋扭矩磁逻辑器件。通过输入元件施加电流，并测量输出元件两端产生的电阻或电压。输入元件包括自由层，并且输出元件包括电连接到输入元件的自由层的自由层。输入元件和输出元件的自由层可以通过静磁耦合电连接，或者可以物理耦合。在一些实施例中，输出元件可以具有多于一个的自由层。

56. 发明申请

US20090184930A1 POSITION DETECTING DISPLAY PANEL 审中-公开
标题翻译：位置检测显示面板
公开(公告)号：US20090184930A1
公开(公告)日：2009-07-23
申请号：US12015966
申请日：2008-01-17
申请人： Yang Li , Haiwen Xi , Insik Jin , Song S. Xue
发明人： Yang Li , Haiwen Xi , Insik Jin , Song S. Xue
IPC分类号： G06F3/046
CPC分类号： G06F3/0412 , G06F3/046
摘要： An array of sensors, which is coupled to an array of pixel elements in a position detecting display panel, includes sensors that are each registered with a corresponding pixel element of the array of pixel elements, and that each include a material exhibiting magneto-electric behavior in response to a magnetic field source. Some systems may include the position detecting display panel and at least one separate stylus, which includes the magnetic field source. A voltage source, that is operably coupled to each sensor and each pixel element, applies a voltage across one or more particular pixel elements, according to the magneto-electric behavior of the corresponding sensor(s), when the magnetic field source is brought into proximity the corresponding sensor(s).
摘要翻译：耦合到位置检测显示面板中的像素元件阵列的传感器阵列包括各自记录有像素元件阵列的对应像素元件的传感器，并且每个传感器包括表现出磁电行为的材料响应于磁场源。一些系统可以包括位置检测显示面板和包括磁场源的至少一个单独的触控笔。可操作地耦合到每个传感器和每个像素元件的电压源根据相应传感器的磁电行为在一个或多个特定像素元件上施加电压，当磁场源进入靠近相应的传感器。

57. 发明授权

US08599600B2 Write verify method for resistive random access memory 失效
标题翻译：电阻随机存取存储器的写验证方法
公开(公告)号：US08599600B2
公开(公告)日：2013-12-03
申请号：US13278249
申请日：2011-10-21
申请人： Haiwen Xi , Song S. Xue
发明人： Haiwen Xi , Song S. Xue
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C11/5664 , G11C11/5685 , G11C13/0007 , G11C13/0014 , G11C13/0016 , G11C13/0064 , G11C2013/0073 , G11C2211/5621 , G11C2213/31 , G11C2213/32
摘要： Write verify methods for resistance random access memory (RRAM) are provided. The methods include applying a reset operation voltage pulse across a RRAM cell to change a resistance of the RRAM cell from a low resistance state to a high resistance state and applying a forward resetting voltage pulse across the RRAM cell if the RRAM cell has a high resistance state resistance value less than a selected lower resistance limit value. The method also includes applying a reverse resetting voltage pulse across the RRAM cell if the RRAM cell has a high resistance state resistance values is greater than a selected upper resistance limit value. The reverse resetting voltage pulse has a second polarity being opposite the first polarity.
摘要翻译：提供了电阻随机存取存储器（RRAM）的写验证方法。所述方法包括在RRAM单元之间施加复位操作电压脉冲以将RRAM单元的电阻从低电阻状态改变为高电阻状态，并且如果RRAM单元具有高电阻则在RRAM单元之间施加正向复位电压脉冲状态电阻值小于选定的下限电阻值。该方法还包括如果RRAM单元具有大于所选上限电阻值的高电阻状态电阻值，则跨越RRAM单元施加反向复位电压脉冲。反向复位电压脉冲具有与第一极性相反的第二极性。

58. 发明授权

US08400823B2 Memory with separate read and write paths 有权
标题翻译：内存具有单独的读写路径
公开(公告)号：US08400823B2
公开(公告)日：2013-03-19
申请号：US12774016
申请日：2010-05-05
申请人： Haiwen Xi , Hongyue Liu , Michael Xuefei Tang , Antoine Khoueir , Song S. Xue
发明人： Haiwen Xi , Hongyue Liu , Michael Xuefei Tang , Antoine Khoueir , Song S. Xue
IPC分类号： G11C11/00
CPC分类号： G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line. The giant magnetoresistance cell includes a free magnetic layer separated from a first pinned magnetic layer by a first non-magnetic electrically conducting layer. A magnetic tunnel junction data cell is electrically coupled between a read bit line and a read source line. The magnetic tunnel junction data cell includes the free magnetic layer separated from a second pinned magnetic layer by an oxide barrier layer. A write current passes through the giant magnetoresistance cell to switch the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell, and be read by a read current passing though the magnetic tunnel junction data cell.
摘要翻译：存储单元包括电耦合在写位线和写入源线之间的巨磁电阻单元。巨磁阻单元包括通过第一非磁性导电层与第一固定磁性层分离的自由磁性层。磁性隧道结数据单元电耦合在读取位线和读取源极线之间。磁性隧道结数据单元包括通过氧化物阻挡层与第二固定磁性层分离的自由磁性层。写入电流通过巨磁电阻单元，以将巨磁阻单元切换到高电阻状态和低电阻状态之间。磁隧道结数据单元被配置为通过与巨磁电阻单元的静磁耦合在高电阻状态和低电阻状态之间切换，并且通过通过磁性隧道结数据单元的读取电流来读取。

59. 发明授权

US08203870B2 Flux programmed multi-bit magnetic memory 有权
标题翻译：磁通编程多位磁记忆体
公开(公告)号：US08203870B2
公开(公告)日：2012-06-19
申请号：US12953205
申请日：2010-11-23
申请人： Nurul Amin , Dimitar V. Dimitrov , Haiwen Xi , Song S. Xue
发明人： Nurul Amin , Dimitar V. Dimitrov , Haiwen Xi , Song S. Xue
IPC分类号： G11C11/00
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/222 , Y10S977/935
摘要： An apparatus and associated method for a non-volatile memory cell, such as a multi-bit magnetic random access memory cell. In accordance with various embodiments, a first magnetic tunnel junction (MTJ) is adjacent to a second MTJ having a magnetic filter. The first MTJ is programmed to a first logical state with a first magnetic flux while the magnetic filter absorbs the first magnetic flux to prevent the second MTJ from being programmed.
摘要翻译：一种用于非易失性存储单元（诸如多位磁随机存取存储单元）的装置和相关方法。根据各种实施例，第一磁性隧道结（MTJ）与具有磁性过滤器的第二MTJ相邻。第一MTJ被编程为具有第一磁通量的第一逻辑状态，同时磁性滤波器吸收第一磁通量以防止第二MTJ被编程。

60. 发明申请

US20120104348A1 PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING 有权
标题翻译：通过选择性通道形成可编程金属化记忆细胞
公开(公告)号：US20120104348A1
公开(公告)日：2012-05-03
申请号：US13348253
申请日：2012-01-11
申请人： Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
发明人： Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
IPC分类号： H01L47/00
CPC分类号： H01L45/085 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/141 , H01L45/143 , H01L45/1625 , H01L45/1633 , H01L45/1658 , H01L45/1675
摘要： Methods for making a programmable metallization memory cell are disclosed.
摘要翻译：公开了制造可编程金属化存储单元的方法。

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