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51. 发明申请

US20070193500A1 Method for manufacturing single crystal semiconductor 有权
标题翻译：单晶半导体制造方法
公开(公告)号：US20070193500A1
公开(公告)日：2007-08-23
申请号：US10589587
申请日：2005-02-18
申请人： Hiroshi Inagaki , Masanori Honma , Shigeki Kawashima , Masahiro Shibata
发明人： Hiroshi Inagaki , Masanori Honma , Shigeki Kawashima , Masahiro Shibata
IPC分类号： C30B11/00
CPC分类号： C30B15/20 , C30B15/305 , C30B29/06 , Y10T117/1056 , Y10T117/1068
摘要： A method for manufacturing a single crystal semiconductor, in which, in a process of pulling up the single crystal semiconductor from melt for growing it, an impurity is incorporated more uniformly into the single crystal semiconductor so that a variation in impurity concentration across the semiconductor wafer surface can be reduced, and thus, the planarity of the wafer can be improved. In the process of pulling-up the single crystal semiconductor (6), fluctuation in a pulling-up speed is controlled, whereby the variation in concentration of the impurity in the single crystal semiconductor (6) is reduced. Especially, a width of speed fluctuation (ΔV) in 10 seconds is adjusted to less than 0.025 mm/min. Furthermore, in carrying out the control for adjusting the pulling-up speed such that a diameter of the single crystal semiconductor (6) becomes a desired diameter, a magnetic field having strength of 1,500 gauss or more is applied to the melt (5).
摘要翻译：一种用于制造单晶半导体的方法，其中在将单晶半导体从用于生长的熔体中提取单个晶体的过程中，杂质更均匀地结合到单晶半导体中，使得跨越半导体晶片的杂质浓度的变化可以减少表面，从而可以提高晶片的平面性。在提升单晶半导体（6）的过程中，控制上拉速度的波动，从而减小单晶半导体（6）中杂质浓度的变化。特别地，10秒内的速度波动（DeltaV）的宽度被调整为小于0.025mm / min。此外，在进行用于调节上升速度使得单晶半导体（6）的直径成为期望直径的控制时，对熔体（5）施加强度为1500高斯或更高的磁场。

52. 发明申请

US20070157871A1 Single crystal semiconductor manufacturing apparatus and method 有权
标题翻译：单晶半导体制造装置及方法
公开(公告)号：US20070157871A1
公开(公告)日：2007-07-12
申请号：US10588533
申请日：2004-02-09
申请人： Hiroshi Inagaki , Masahiro Shibata , Shigeki Kawashima , Nobuyuki Fukuda
发明人： Hiroshi Inagaki , Masahiro Shibata , Shigeki Kawashima , Nobuyuki Fukuda
IPC分类号： C30B15/00 , C30B13/00 , C30B11/00 , C30B28/08 , C30B21/04
CPC分类号： C30B15/14 , C30B15/22 , C30B15/305 , C30B29/06 , C30B30/04 , Y10S117/917 , Y10T117/10 , Y10T117/1016 , Y10T117/1088
摘要： A single crystal semiconductor manufacturing method for realizing a dislocation-free single crystal while not varying or hardly varying electric power supplied to a heater when and after a seed crystal comes into contact with a melt. The allowable temperature difference ΔTc not causing dislocation in the seed crystal is determined according to the concentration (C) of the impurities added to the seed crystal (14) and the size (diameter D) of the seed crystal (14). When the seed crystal (14) comes into contact with the melt (5), electric power supplied to a bottom heater (19) is fixed, and a magnetic field produced by a magnet (20) is applied to the melt (5). Electric power supplied to a main heater (9) is controlled so that the temperature at the surface of the melt (5) which the seed crystal (14) comes into contact with may be a target value. After the seed crystal (14) comes into contact with the melt (5), single crystal silicon is pulled up without performing a necking process.
摘要翻译：一种单晶半导体制造方法，用于在晶种与熔体接触的同时，在不改变或几乎不变化供给加热器的电力的情况下实现无位错单晶。根据添加到晶种（14）中的杂质浓度（C）和晶种（14）的尺寸（直径D）来确定晶种中不产生位错的允许温差DeltaTc。当籽晶（14）与熔体（5）接触时，提供给底部加热器（19）的电力被固定，并且由磁体（20）产生的磁场被施加到熔体（5）。控制提供给主加热器（9）的电力使得晶种（14）接触的熔体（5）的表面处的温度可以是目标值。在籽晶（14）与熔体（5）接触之后，单晶硅被拉起而不进行缩颈处理。

53. 发明授权

US07155890B2 Production device for carbon fibers and production method therefor 有权
标题翻译：碳纤维生产装置及其生产方法
公开(公告)号：US07155890B2
公开(公告)日：2007-01-02
申请号：US10479973
申请日：2002-06-11
申请人： Atsushi Kawamura , Hiroshi Inagaki , Takahiko Kunisawa
发明人： Atsushi Kawamura , Hiroshi Inagaki , Takahiko Kunisawa
IPC分类号： B65H69/06
CPC分类号： D01F9/32 , B65H69/061 , B65H2701/314
摘要： A production device and production method for carbon fibers of the present invention is utilized to reliably obtain a connecting portion having a high process passing property with a simple mechanism so as to achieve a continuous operation and improve a firing process operability for achieving a low cost. A pair of yarn gripping devices for overlaying precursor fiber yarns to be connected one upon another and gripping the overlaid ends is provided, and a fluid processing unit for applying an entangling process by jetting a plurality of rows of fluid in along a yarn length direction is provided between the pair of yarn gripping devices. A plurality of discontinuous thread handling areas of the precursor fiber yarns in a fluid jet area of the fluid processing unit having fluid jet holes are disposed at predetermined intervals.
摘要翻译：采用本发明的碳纤维的制造装置和制造方法，通过简单的机构可靠地获得具有高工艺通过性的连接部，以实现连续的动作，提高烧成工序的可操作性，实现低成本。提供一对纱线夹持装置，用于将前端纤维纱线叠加并夹紧重叠的端部，并且用于通过沿着纱线长度方向喷射多排流体来进行缠结处理的流体处理单元是设置在一对纱线夹持装置之间。具有流体喷射孔的流体处理单元的流体喷射区域中的前体纤维纱线的多个不连续的纱线处理区域以预定间隔布置。

54. 发明授权

US06733585B2 Apparatus for pulling single crystal by CZ method 有权
标题翻译：用CZ法拉单晶的装置
公开(公告)号：US06733585B2
公开(公告)日：2004-05-11
申请号：US09775287
申请日：2001-02-01
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Tadashi Hata
IPC分类号： C30B1520
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要翻译：在配备有冷却器和隔热构件的Czochralski（CZ）单晶拉拔器中，它们将被放置在CZ炉中，使得能够顺利地再充电和额外的材料充电。此外，可以顺利地进行利用Dash的颈部方法消除硅晶种的位错。为此，提供了一种CZ单晶拉拔器，其中冷却器和绝热构件在再充电或附加充电材料期间或在通过使用硅晶粒消除硅晶种的位错期间立即向上移动离开熔融表面破折号的脖子法。

55. 发明授权

US6139630A Suspender for polycrystalline material rods 失效
标题翻译：多晶材料棒悬挂件
公开(公告)号：US6139630A
公开(公告)日：2000-10-31
申请号：US648812
申请日：1996-05-16
申请人： Tatsuhiro Fujiyama , Hiroshi Inagaki , Teruhiko Uchiyama , Hidetoshi Kurogi
发明人： Tatsuhiro Fujiyama , Hiroshi Inagaki , Teruhiko Uchiyama , Hidetoshi Kurogi
IPC分类号： C30B15/02 , C30B15/30 , H01L21/208 , C30B35/00
CPC分类号： C30B15/02 , C30B15/30 , Y10S117/918 , Y10T117/10 , Y10T117/1072
摘要： A suspender for suspending polycrystalline rods steadfastly and easily in a furnace for single-crystal fabrication by the recharge or additionally charged method is disclosed. The suspender includes a plate which is made of molybdenum or SiC-coated graphite and a stick perpendicularly connected to the center of the plate. Both sides of the openings are arms for supporting the polycrystalline rods, thereby suspending the polycrystalline rods vertically in the opening. Means for preventing the polycrystalline rods from slipping out of the suspender are provided at ends of the arms. Therefore, the polycrystalline rods will not slip from the opening even though the plate is inclined. The suspender is suspended in the furnace by a stick. The polycrystalline rods require few tasks to form grooves and install on the suspender, thus decreasing the process time and manufacturing cost.
摘要翻译：公开了一种用于通过再充电或额外充电的方法在用于单晶制造的炉中坚固和容易地悬挂多晶棒的悬挂件。悬挂件包括由钼或SiC涂覆的石墨制成的板和垂直地连接到板的中心的杆。开口的两侧是用于支撑多晶棒的臂，从而将多晶棒垂直悬挂在开口中。用于防止多晶棒从悬臂中滑出的装置设置在臂的端部。因此，即使板倾斜，多晶棒也不会从开口滑动。吊杆通过一根棍子悬挂在炉子里。多晶棒需要很少的任务来形成凹槽并安装在吊架上，从而减少加工时间和制造成本。

56. 发明授权

US5951759A Apparatus of pulling up single crystals 失效
标题翻译：提取单晶的装置
公开(公告)号：US5951759A
公开(公告)日：1999-09-14
申请号：US950435
申请日：1997-10-15
申请人： Hiroshi Inagaki , Fumitaka Ishikawa
发明人： Hiroshi Inagaki , Fumitaka Ishikawa
IPC分类号： C30B15/30 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/30 , Y10S117/911 , Y10T117/1032 , Y10T117/1072
摘要： This invention provides a apparatus and a method of pulling up single crystals, which respond to the weight increase of semiconductor single crystal produced by the CZ method. The retaining wire wind-up mechanisms 11, 12; multiple pairs of guide pipes 4a, 4c capable of being moved upward or downward with respect to the seed holder 1; and a plurality of retaining wires 13, 15, each retaining wire passing through one pair of the guide pipes and having its central portion to be bent into a "U" shape are provided in the central portion of the lifting wire 5. The single crystal 17 can be retained by the retaining wire 13, 15, if the guide pipes 4a, 4c are driven to move downward and the "U" shaped portions of the retaining wires 13, 15 are driven to engage with the necked portion 17b so as to lift single crystal 17. The load is determined based on the detected value coming from the weight sensors installed on the means for winding up the retaining wires. Furthermore, when the single crystal 17 has to be re-melted, the retaining wires 13, 15 is loosened and disengaged with the necked portion 17b.
摘要翻译：本发明提供一种拉伸单晶的装置和方法，其响应于通过CZ方法产生的半导体单晶的重量增加。保持线卷绕机构11,12; 能够相对于种子保持器1向上或向下移动的多对导管4a，4c; 并且在提升线5的中央部设置有多条保持线13,15，每条保持线通过一对导管并且具有被弯曲成“U”形的中心部分的保持线。单晶如果引导管4a，4c被驱动向下移动并且保持线13,15的“U”形部分被驱动以与颈部17b接合，则保持线13,15可以被保持线13,15保持，以便提升单晶17.负载基于来自安装在用于卷绕保持线的装置上的重量传感器的检测值来确定。此外，当单晶17必须再熔化时，保持线13,15被松开并与颈部17b分离。

57. 发明授权

US5888293A Material supplied for fabricating single-crystal semiconductor 失效
标题翻译：用于制造单晶半导体的材料
公开(公告)号：US5888293A
公开(公告)日：1999-03-30
申请号：US773377
申请日：1996-12-26
申请人： Tatsuhiro Fujiyama , Hiroshi Inagaki , Hidetoshi Kurogi
发明人： Tatsuhiro Fujiyama , Hiroshi Inagaki , Hidetoshi Kurogi
IPC分类号： C30B15/02 , C30B29/06 , H01L21/208
CPC分类号： C30B15/02 , Y10S117/911 , Y10T117/1056
摘要： A low-cost and high productivity charging material is provided for use in the recharge or additional charge fabrication of single-crystal semiconductor by means of the CZ method. Common polysilicon rods utilized in recharge or additional charge fabrication have their end portions formed into ring grooves. A joint element is made of silicon. When the end portions of the rods contact, the joint element engages the grooves to connect the rods together along their longitudinal direction. The rods can have arbitrary length, whereas the total weight, including the joint element, must be adjusted by the length to be greater than those of the melted polysilicon and the suspending portions.
摘要翻译：提供了一种低成本和高生产率的充电材料，用于通过CZ方法在单晶半导体的再充电或附加电荷制造中使用。在再充电或附加充电制造中使用的普通多晶硅棒具有形成环形槽的端部。接头元件由硅制成。当杆的端部接触时，接头元件接合凹槽，以将杆沿其纵向方向连接在一起。杆可以具有任意长度，而包括接头元件在内的总重量必须被调整为长于熔融多晶硅和悬挂部分的长度。

58. 发明授权

US5828217A Misfire detecting device for internal combustion engine 失效
标题翻译：内燃机失火检测装置
公开(公告)号：US5828217A
公开(公告)日：1998-10-27
申请号：US567992
申请日：1995-12-04
申请人： Hiroshi Inagaki , Kanehisa Kitsukawa
发明人： Hiroshi Inagaki , Kanehisa Kitsukawa
IPC分类号： F02P17/00 , F02P17/12
CPC分类号： F02P17/12 , F02P2017/006 , F02P2017/125
摘要： A misfire detecting device for an internal combustion engine having a double-ended or single-ended distributorless ignition system is provided. The device comprises a first capacitor connected to a secondary winding side of a spark plug and in parallel to the spark plug, the first capacitor being charged by a voltage produced at a secondary winding side of an ignition coil and thereafter applying a voltage to the spark plug when a voltage at the secondary winding side drops, a second capacitor connected in series with the first capacitor and having a capacitance larger than that of the first capacitor to divide a voltage across the first capacitor, and a misfire detecting unit connected to a junction between the first capacitor and the second capacitor to detect a misfire on the basis of a decay characteristic of a divided voltage produced at the second capacitor.
摘要翻译：提供一种具有双端或单端无分配器点火系统的内燃机失火检测装置。该装置包括连接到火花塞的次级绕组侧并与火花塞平行的第一电容器，第一电容器由在点火线圈的次级绕组侧产生的电压充电，然后向火花施加电压当次级绕组侧的电压下降时，插塞，与第一电容器串联连接的第二电容器，其电容大于第一电容器的电容，以分压第一电容器两端的电压，以及连接到接点的失火检测单元在第一电容器和第二电容器之间，基于在第二电容器产生的分压的衰减特性来检测失火。

59. 发明授权

US5727534A Misfire detecting device for multi-cylinder internal combustion engine 失效
标题翻译：多缸内燃机失火检测装置
公开(公告)号：US5727534A
公开(公告)日：1998-03-17
申请号：US570972
申请日：1995-12-12
申请人： Noriaki Kondo , Hiroshi Inagaki
发明人： Noriaki Kondo , Hiroshi Inagaki
IPC分类号： G01N27/62 , F02P17/00 , F02P17/12 , G01N27/00
CPC分类号： F02P17/12 , F02P2017/006 , F02P2017/125
摘要： A misfire detecting device for a multi-cylinder internal combustion engine is provided. The misfire detecting device comprises high voltage pulse producing means for producing, after spark discharge of a spark plug, a high voltage pulse which is not so high as to cause the spark plug to discharge, voltage applying means for applying the high voltage pulse to a conductive path connecting between the secondary winding of the ignition coil to the spark plug, by way of a reverse current preventing diode and a leakage preventing diode for preventing intrusion of the high voltage for ignition, voltage dividing means for dividing a voltage at the junction between the reverse current preventing diode and the leakage preventing diode to obtain a divided voltage thereat, and misfire detecting means for detecting a misfire on the basis of a decay characteristic of the divided voltage obtained after application of the high voltage pulse. The high voltage pulse producing means, the voltage applying means, the voltage dividing means and the combustion condition detecting means are housed within a case having a pair of terminals connectable directly and in series to the conductive path and having disposed therewithin a conductive line connecting between the terminals. The voltage applying means applies the high voltage pulse to the conductive line.
摘要翻译：提供了一种用于多缸内燃机的失火检测装置。失火检测装置包括高电压脉冲产生装置，用于在火花塞的火花放电之后产生不高于使火花塞放电的高电压脉冲，用于将高电压脉冲施加到电压脉冲的电压施加装置将点火线圈的次级绕组与火花塞连接的导电路径，通过反向电流防止二极管和防止漏电的二极管，用于防止高压点火引起的入侵，分压装置，用于将点火线圈反向电流防止二极管和防漏二极管在其上获得分压，以及失火检测装置，用于根据施加高电压脉冲之后获得的分压电压的衰减特性来检测失火。高电压脉冲产生装置，电压施加装置，分压装置和燃烧条件检测装置容纳在具有一对可直接连接并与串联连接的导电路径的端子的壳体内，终端。电压施加装置将高电压脉冲施加到导线。

60. 发明授权

US5503132A Device for detecting misfire of internal combustion engine equipped with double-ended distributorless ignition system 失效
标题翻译：配备双端无分配器点火系统的内燃机失火装置
公开(公告)号：US5503132A
公开(公告)日：1996-04-02
申请号：US364998
申请日：1994-12-28
申请人： Shigeru Miyata , Noriaki Kondo , Hiroshi Inagaki , Masaru Kondou
发明人： Shigeru Miyata , Noriaki Kondo , Hiroshi Inagaki , Masaru Kondou
IPC分类号： G01M15/04 , F02B1/04 , F02D45/00 , F02P15/08 , F02P17/12 , F02P17/00
CPC分类号： F02P15/08 , F02P17/12 , F02B1/04 , F02P2017/123 , F02P2017/125
摘要： A misfire detecting device for a double-ended distributorless ignition system is provided. The device includes a pulse generating circuit for generating a positive polarity pulse which is not so high as to cause spark discharge during the time after completion of spark discharge and before beginning of application of an ignition high voltage for next spark discharge. A reverse current preventing diode is connected at an anode to an output end of the pulse generating circuit and at a cathode to a positive polarity side of a secondary winding of an ignition coil. A plug voltage dividing circuit for dividing a plug voltage is connected between a center electrode and an outer or ground electrode of each of spark plugs to obtain a divided voltage. A detecting circuit detects a misfire of the spark plugs on the basis of an attenuation characteristic of the divided voltage after application of the positive polarity pulse.
摘要翻译：提供了一种用于双端无分配器点火系统的失火检测装置。该装置包括用于产生正极性脉冲的脉冲发生电路，该正极性脉冲不高于在火花放电完成后的时间期间以及开始施加用于下一次火花放电的点火高电压之前的火花放电。反向电流防止二极管在阳极处连接到脉冲发生电路的输出端，并且在阴极连接到点火线圈的次级绕组的正极侧。用于分割插头电压的插头分压电路连接在每个火花塞的中心电极和外部或接地电极之间以获得分压。检测电路根据施加正极性脉冲之后的分压的衰减特性来检测火花塞的失火。

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