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41. 发明授权

US08758580B2 Deposition system with a rotating drum 有权
标题翻译：具有旋转鼓的沉积系统
公开(公告)号：US08758580B2
公开(公告)日：2014-06-24
申请号：US13211884
申请日：2011-08-17
申请人： Richard DeVito
发明人： Richard DeVito
IPC分类号： C23C14/22 , C23C14/50
CPC分类号： H01J37/32899 , C23C14/0042 , C23C14/0068 , C23C14/0078 , C23C14/0089 , C23C14/042 , C23C14/345 , C23C14/35 , C23C14/505 , C23C14/541 , H01J37/32458 , H01J37/32779 , H01J37/32816 , H01J37/3405 , H01J37/3476
摘要： A deposition method comprises flowing a first gas into a metallization zone maintained at a first pressure. A second gas flows into a reaction zone maintained at a second pressure. The second pressure is less than the first pressure. A rotating drum includes at least one substrate mounted to a surface of the drum. The surface alternately passes through the metallization zone and passes through the reaction zone. A target is sputtered in the metallization zone to create a film on the at least one substrate. The film on the at least one substrate is reacted in the reaction zone.
摘要翻译：沉积方法包括使第一气体流入维持在第一压力的金属化区域。第二气体流入维持在第二压力的反应区。第二压力小于第一压力。旋转滚筒包括安装到滚筒表面的至少一个基板。表面交替穿过金属化区并通过反应区。在金属化区域中溅射靶以在至少一个基底上形成膜。至少一个底物上的膜在反应区中反应。

42. 发明申请

US20140150864A1 Gas Barrier Film and Electronic Device 审中-公开
标题翻译：阻气膜和电子设备
公开(公告)号：US20140150864A1
公开(公告)日：2014-06-05
申请号：US14177143
申请日：2014-02-10
申请人： Sinichi Hoshi , Shigeto Okuji
发明人： Sinichi Hoshi , Shigeto Okuji
IPC分类号： B32B27/06 , H01L31/048 , B32B33/00
CPC分类号： B32B27/06 , B32B9/007 , B32B9/045 , B32B15/08 , B32B27/08 , B32B27/28 , B32B27/281 , B32B27/283 , B32B27/286 , B32B27/288 , B32B27/308 , B32B27/32 , B32B27/34 , B32B27/36 , B32B27/365 , B32B33/00 , B32B2307/306 , B32B2307/412 , B32B2307/538 , B32B2307/712 , B32B2307/7242 , B32B2307/7246 , B32B2307/732 , B32B2457/00 , C08J7/045 , C08J2367/02 , C08J2483/04 , C23C14/024 , C23C14/0641 , C23C14/0652 , C23C14/08 , C23C14/345 , C23C14/3485 , H01L31/049 , Y02E10/50 , Y10T428/263 , Y10T428/265 , Y10T428/31663
摘要： Disclosed is a gas barrier film, which demonstrates superior gas barrier properties and surface flatness, demonstrates a high degree of adhesion between layers and is resistant to cracking when bent, and an electronic device provided therewith. A gas barrier film (10) of the present invention has a base (11), and a polyorganosiloxane layer (12) and an inorganic material layer (13) sequentially provided on at least one side of the base (11), and the inorganic material layer (13) is deposited by dynamic ion mixing method.
摘要翻译：公开了一种气体阻隔膜，其表现出优异的阻气性和表面平坦度，表现出层之间的高度粘附性，并且在弯曲时耐开裂，以及设置有电子装置。本发明的阻气膜（10）具有基材（11）和依次设置在基材（11）的至少一面上的聚有机硅氧烷层（12）和无机材料层（13），无机材料层材料层（13）通过动态离子混合法沉积。

43. 发明授权

US08735217B2 Multifunctional electrode 有权
公开(公告)号：US08735217B2
公开(公告)日：2014-05-27
申请号：US14017942
申请日：2013-09-04
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Dipankar Pramanik , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
IPC分类号： H01L29/02
CPC分类号： C23C14/345 , C23C14/0042 , C23C14/0641 , C23C14/083 , C23C14/225 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1616 , H01L45/1625
摘要： A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

44. 发明授权

US08696875B2 Self-ionized and inductively-coupled plasma for sputtering and resputtering 有权
标题翻译：用于溅射和再溅射的自电离和电感耦合等离子体
公开(公告)号：US08696875B2
公开(公告)日：2014-04-15
申请号：US10495506
申请日：2002-11-14
申请人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
发明人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
IPC分类号： C23C14/35
CPC分类号： C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , C23C14/568 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).
摘要翻译：公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转所述腔室使用旋转装置（446,448,450）。辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。氩（426）通过阀（428）供应。目标（416）被供电（434）。

45. 发明授权

US08663430B2 Magnetron sputtering apparatus and method for manufacturing thin film 有权
标题翻译：磁控管溅射装置及薄膜制造方法
公开(公告)号：US08663430B2
公开(公告)日：2014-03-04
申请号：US12468222
申请日：2009-05-19
申请人： Seishi Horiguchi
发明人： Seishi Horiguchi
IPC分类号： C23C14/35
CPC分类号： H01J37/3408 , C23C14/067 , C23C14/345 , C23C14/35 , C23C14/56 , C23C14/5826 , C23C14/584 , H01J37/3452
摘要： In the present invention, in forming a LaB6 thin film by magnetron sputtering, the single-crystal properties in the wide domain direction in the obtained LaB6 thin film are improved. In one embodiment of the present invention, in a magnetron sputtering apparatus, parallel magnetic field strength on a surface of the substrate is set to 0.1 times or less parallel magnetic field strength on a surface of the target.
摘要翻译：在本发明中，通过磁控溅射法形成LaB6薄膜时，得到的LaB6薄膜的宽畴方向的单晶特性得到改善。在本发明的一个实施例中，在磁控溅射装置中，将基板表面上的平行磁场强度设定为目标表面的平均磁场强度的0.1倍以下。

46. 发明授权

US08637142B2 Coated article and method for manufacturing same 有权
标题翻译：涂层制品及其制造方法
公开(公告)号：US08637142B2
公开(公告)日：2014-01-28
申请号：US13094988
申请日：2011-04-27
申请人： Hsin-Pei Chang , Wen-Rong Chen , Huann-Wu Chiang , Cheng-Shi Chen , Xiao-Qiang Chen
发明人： Hsin-Pei Chang , Wen-Rong Chen , Huann-Wu Chiang , Cheng-Shi Chen , Xiao-Qiang Chen
IPC分类号： B32B9/00
CPC分类号： C23C14/0641 , C23C14/345 , C23C14/352 , C23C14/505 , Y10T428/24967 , Y10T428/24975 , Y10T428/265 , Y10T428/31678
摘要： A coated article comprises a substrate; a bonding layer deposited on the substrate; and a composite layer deposited on the bonding layer. The composite layer includes an equal number of alternating chromium-nitride layers and aluminum-nitride layers.
摘要翻译：涂覆制品包括基材; 沉积在基板上的结合层; 以及沉积在结合层上的复合层。复合层包括相等数量的交替的氮化铬层和氮化铝层。

47. 发明授权

US08557088B2 Physical vapor deposition with phase shift 有权
标题翻译：具有相移的物理气相沉积
公开(公告)号：US08557088B2
公开(公告)日：2013-10-15
申请号：US12389241
申请日：2009-02-19
申请人： Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshikazu Hishinuma
发明人： Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshikazu Hishinuma
IPC分类号： C23C14/34
CPC分类号： C23C14/345 , H01J37/3408 , H01J37/3438 , H01J37/3444
摘要： A method of physical vapor deposition includes applying a first radio frequency signal having a first phase to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, applying a second radio frequency signal having a second phase to a chuck in the physical vapor deposition apparatus, wherein the chuck supports a substrate, and wherein a difference between the first and second phases creates a positive self bias direct current voltage on the substrate, and depositing a material from the sputtering target onto the substrate.
摘要翻译：一种物理气相沉积方法包括在物理气相沉积设备中向阴极施加具有第一相的第一射频信号，其中所述阴极包括溅射靶，将具有第二相的第二射频信号施加到卡盘中的第二相位物理气相沉积设备，其中所述卡盘支撑衬底，并且其中所述第一和第二相之间的差产生在所述衬底上的正自偏压直流电压，以及将材料从所述溅射靶沉积到所述衬底上。

48. 发明申请

US20130248352A1 Multiple Frequency Sputtering for Enhancement in Deposition Rate and Growth Kinetics of Dielectric Materials 审中-公开
标题翻译：用于增强介电材料的沉积速率和生长动力学的多频率溅射
公开(公告)号：US20130248352A1
公开(公告)日：2013-09-26
申请号：US13609178
申请日：2012-09-10
申请人： Chong Jiang , Byung-Sung Leo Kwak , Michael Stowell , Karl Armstrong
发明人： Chong Jiang , Byung-Sung Leo Kwak , Michael Stowell , Karl Armstrong
IPC分类号： C23C14/34
CPC分类号： C23C14/345 , C23C14/00 , C23C14/3471 , H01J37/32165 , H01J37/3405
摘要： A method of sputter depositing dielectric thin films may comprise: providing a substrate on a substrate pedestal in a process chamber, the substrate being positioned facing a sputter target; simultaneously applying a first RF frequency from a first power supply and a second RF frequency from a second power supply to the sputter target; and forming a plasma in the process chamber between the substrate and the sputter target, for sputtering the target; wherein the first RF frequency is less than the second RF frequency, the first RF frequency is chosen to control the ion energy of the plasma and the second RF frequency is chosen to control the ion density of the plasma. The self-bias of surfaces within said process chamber may be selected; this is enabled by connecting a blocking capacitor between the substrate pedestal and ground.
摘要翻译：溅射沉积电介质薄膜的方法可以包括：在处理室中的衬底基座上提供衬底，衬底被定位成面对溅射靶; 同时将来自第一电源的第一RF频率和来自第二电源的第二RF频率施加到溅射靶; 以及在所述基板和所述溅射靶之间的所述处理室中形成等离子体，用于溅射所述靶; 其中所述第一RF频率小于所述第二RF频率，选择所述第一RF频率以控制所述等离子体的离子能量，并且选择所述第二RF频率以控制所述等离子体的离子密度。可以选择所述处理室内的表面的自偏压; 这可以通过在衬底基座和接地之间连接隔离电容器来实现。

49. 发明申请

US20130192980A1 CRYSTALLINE ORIENTATION AND OVERHANG CONTROL IN COLLISION BASED RF PLASMAS 有权
标题翻译：基于碰撞的射频等离子体中的晶体定向和超调控制
公开(公告)号：US20130192980A1
公开(公告)日：2013-08-01
申请号：US13749791
申请日：2013-01-25
申请人： APPLIED MATERIALS, INC.
发明人： ZHENBIN GE , ALAN RITCHIE , ADOLPH MILLER ALLEN
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , C23C14/046 , C23C14/345 , C23C14/3492 , C23C14/351 , H01J37/32706 , H01J37/3299 , H01J37/3405
摘要： Methods and apparatus for depositing a metal-containing layer on a substrate are provided herein. In some embodiments, a method of processing a substrate in a physical vapor deposition (PVD) chamber includes applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying a DC power to the target to direct the plasma towards the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the plasma sheath voltage between the plasma and the substrate to form a metal-containing layer having a desired crystal structure and or desired morphology on feature structures.
摘要翻译：本文提供了在基底上沉积含金属层的方法和装置。在一些实施例中，在物理气相沉积（PVD）室中处理衬底的方法包括将VHF频率的RF功率施加到包括设置在衬底上的PVD室中的金属的靶，以形成等离子体形成加油站; 可选地向所述目标施加DC电力以将所述等离子体引向所述目标; 使用等离子体从靶中溅射金属原子，同时保持PVD室中的第一压力足以离子化主要部分的溅射金属原子; 以及控制等离子体和衬底之间的等离子体鞘电压，以在特征结构上形成具有所需晶体结构和/或所需形态的含金属层。

50. 发明授权

US08437240B2 Ferroelectric recording medium and method of manufacturing the same, information processing device, and method of processing information 失效
标题翻译：铁电记录介质及其制造方法，信息处理装置以及信息处理方法
公开(公告)号：US08437240B2
公开(公告)日：2013-05-07
申请号：US13074530
申请日：2011-03-29
申请人： Tomokazu Umezawa
发明人： Tomokazu Umezawa
IPC分类号： G11B11/00 , G11B9/00
CPC分类号： G11B9/02 , C23C14/185 , C23C14/3407 , C23C14/345 , Y10T428/24802
摘要： A ferroelectric recording medium includes a ferroelectric recording layer on an electrode layer, which includes an insulative layer on the ferroelectric recording layer, and includes non-continuous electrically conductive coating portions on the insulative layer.
摘要翻译：铁电记录介质包括在电极层上的铁电记录层，其在铁电记录层上包括绝缘层，并且在绝缘层上包括非连续的导电涂层部分。

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